Electron doping in bottom up engineered thermoelectric nanomaterials through HCl mediated ligand displacement

M. Ibanez, R. Korkosz, Z. Luo, P. Riba, D. Cadavid, S. Ortega, A. Cabot, M. Kanatzidis, Journal of the American Chemical Society 137 (2015) 4046–4049.

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Abstract
A simple and effective method to introduce precise amounts of doping in nanomaterials produced from the bottom-up assembly of colloidal nanoparticles (NPs) is described. The procedure takes advantage of a ligand displacement step to incorporate controlled concentrations of halide ions while removing carboxylic acids from the NP surface. Upon consolidation of the NPs into dense pellets, halide ions diffuse within the crystal structure, doping the anion sublattice and achieving n-type electrical doping. Through the characterization of the thermoelectric properties of nanocrystalline PbS, we demonstrate this strategy to be effective to control charge transport properties on thermoelectric nanomaterials assembled from NP building blocks. This approach is subsequently extended to PbTexSe1-x@PbS core-shell NPs, where a significant enhancement of the thermoelectric figure of merit is achieved.
Publishing Year
Date Published
2015-03-11
Journal Title
Journal of the American Chemical Society
Acknowledgement
At IREC, work was supported by European Regional Development Funds and the Framework 7 program under project UNION (FP7-NMP 310250). M.I. and S.O. thank AGAUR for their Beatriu i Pinós postdoctoral grant and the PhD grant, respectively. At Northwestern, work was supported by the Revolutionary Materials for Solid State Energy Conversion, an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, and Office of Basic Energy Sciences under Award Number DE-SC0001054.
Volume
137
Issue
12
Page
4046 - 4049
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Cite this

Ibanez M, Korkosz R, Luo Z, et al. Electron doping in bottom up engineered thermoelectric nanomaterials through HCl mediated ligand displacement. Journal of the American Chemical Society. 2015;137(12):4046-4049. doi:10.1021/jacs.5b00091
Ibanez, M., Korkosz, R., Luo, Z., Riba, P., Cadavid, D., Ortega, S., … Kanatzidis, M. (2015). Electron doping in bottom up engineered thermoelectric nanomaterials through HCl mediated ligand displacement. Journal of the American Chemical Society, 137(12), 4046–4049. https://doi.org/10.1021/jacs.5b00091
Ibanez, Maria, Rachel Korkosz, Zhishan Luo, Pau Riba, Doris Cadavid, Silvia Ortega, Andreu Cabot, and Mercouri Kanatzidis. “Electron Doping in Bottom up Engineered Thermoelectric Nanomaterials through HCl Mediated Ligand Displacement.” Journal of the American Chemical Society 137, no. 12 (2015): 4046–49. https://doi.org/10.1021/jacs.5b00091.
M. Ibanez et al., “Electron doping in bottom up engineered thermoelectric nanomaterials through HCl mediated ligand displacement,” Journal of the American Chemical Society, vol. 137, no. 12, pp. 4046–4049, 2015.
Ibanez M, Korkosz R, Luo Z, Riba P, Cadavid D, Ortega S, Cabot A, Kanatzidis M. 2015. Electron doping in bottom up engineered thermoelectric nanomaterials through HCl mediated ligand displacement. Journal of the American Chemical Society. 137(12), 4046–4049.
Ibanez, Maria, et al. “Electron Doping in Bottom up Engineered Thermoelectric Nanomaterials through HCl Mediated Ligand Displacement.” Journal of the American Chemical Society, vol. 137, no. 12, American Chemical Society, 2015, pp. 4046–49, doi:10.1021/jacs.5b00091.

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