Hole spin coherence in a Ge/Si heterostructure nanowire

A.P. Higginbotham, T. Larsen, J. Yao, H. Yan, C. Lieber, C. Marcus, F. Kuemmeth, Nano Letters 14 (2014) 3582–3586.


Journal Article | Published | English
Author
Higginbotham, Andrew PIST Austria ; Larsen, Thorvald; Yao, Jun; Yan, Hao; Lieber, Charles; Marcus, Charles; Kuemmeth, Ferdinand
Abstract
Relaxation and dephasing of hole spins are measured in a gate-defined Ge/Si nanowire double quantum dot using a fast pulsed-gate method and dispersive readout. An inhomogeneous dephasing time T2* ∼ 0.18 μs exceeds corresponding measurements in III-V semiconductors by more than an order of magnitude, as expected for predominately nuclear-spin-free materials. Dephasing is observed to be exponential in time, indicating the presence of a broadband noise source, rather than Gaussian, previously seen in systems with nuclear-spin-dominated dephasing.
Publishing Year
Date Published
2014-05-05
Journal Title
Nano Letters
Acknowledgement
Funding from the Department of Energy, Office of Science & SCGF, the EC FP7-ICT project SiSPIN no. 323841, and the Danish National Research Foundation is acknowledged.
Volume
14
Issue
6
Page
3582 - 3586
IST-REx-ID
98

Cite this

Higginbotham AP, Larsen T, Yao J, et al. Hole spin coherence in a Ge/Si heterostructure nanowire. Nano Letters. 2014;14(6):3582-3586. doi:10.1021/nl501242b
Higginbotham, A. P., Larsen, T., Yao, J., Yan, H., Lieber, C., Marcus, C., & Kuemmeth, F. (2014). Hole spin coherence in a Ge/Si heterostructure nanowire. Nano Letters. American Chemical Society. https://doi.org/10.1021/nl501242b
Higginbotham, Andrew P, Thorvald Larsen, Jun Yao, Hao Yan, Charles Lieber, Charles Marcus, and Ferdinand Kuemmeth. “Hole Spin Coherence in a Ge/Si Heterostructure Nanowire.” Nano Letters. American Chemical Society, 2014. https://doi.org/10.1021/nl501242b.
A. P. Higginbotham et al., “Hole spin coherence in a Ge/Si heterostructure nanowire,” Nano Letters, vol. 14, no. 6. American Chemical Society, pp. 3582–3586, 2014.
Higginbotham AP, Larsen T, Yao J, Yan H, Lieber C, Marcus C, Kuemmeth F. 2014. Hole spin coherence in a Ge/Si heterostructure nanowire. Nano Letters. 14(6), 3582–3586.
Higginbotham, Andrew P., et al. “Hole Spin Coherence in a Ge/Si Heterostructure Nanowire.” Nano Letters, vol. 14, no. 6, American Chemical Society, 2014, pp. 3582–86, doi:10.1021/nl501242b.
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