--- res: bibo_abstract: - We present the fabrication and characterization of an aluminum transmon qubit on a silicon-on-insulator substrate. Key to the qubit fabrication is the use of an anhydrous hydrofluoric vapor process which selectively removes the lossy silicon oxide buried underneath the silicon device layer. For a 5.6 GHz qubit measured dispersively by a 7.1 GHz resonator, we find T1 = 3.5 μs and T∗2 = 2.2 μs. This process in principle permits the co-fabrication of silicon photonic and mechanical elements, providing a route towards chip-scale integration of electro-opto-mechanical transducers for quantum networking of superconducting microwave quantum circuits. The additional processing steps are compatible with established fabrication techniques for aluminum transmon qubits on silicon.@eng bibo_authorlist: - foaf_Person: foaf_givenName: Andrew J foaf_name: Keller, Andrew J foaf_surname: Keller - foaf_Person: foaf_givenName: Paul foaf_name: Dieterle, Paul foaf_surname: Dieterle - foaf_Person: foaf_givenName: Michael foaf_name: Fang, Michael foaf_surname: Fang - foaf_Person: foaf_givenName: Brett foaf_name: Berger, Brett foaf_surname: Berger - foaf_Person: foaf_givenName: Johannes M foaf_name: Fink, Johannes M foaf_surname: Fink foaf_workInfoHomepage: http://www.librecat.org/personId=4B591CBA-F248-11E8-B48F-1D18A9856A87 orcid: 0000-0001-8112-028X - foaf_Person: foaf_givenName: Oskar foaf_name: Painter, Oskar foaf_surname: Painter bibo_doi: 10.1063/1.4994661 bibo_issue: '4' bibo_volume: 111 dct_date: 2017^xs_gYear dct_identifier: - UT:000406779700031 dct_isPartOf: - http://id.crossref.org/issn/00036951 dct_language: eng dct_publisher: American Institute of Physics@ dct_title: Al transmon qubits on silicon on insulator for quantum device integration@ ...