--- res: bibo_abstract: - Semiconductor nanowires have been playing a crucial role in the development of nanoscale devices for the realization of spin qubits, Majorana fermions, single photon emitters, nanoprocessors, etc. The monolithic growth of site‐controlled nanowires is a prerequisite toward the next generation of devices that will require addressability and scalability. Here, combining top‐down nanofabrication and bottom‐up self‐assembly, the growth of Ge wires on prepatterned Si (001) substrates with controllable position, distance, length, and structure is reported. This is achieved by a novel growth process that uses a SiGe strain‐relaxation template and can be potentially generalized to other material combinations. Transport measurements show an electrically tunable spin–orbit coupling, with a spin–orbit length similar to that of III–V materials. Also, charge sensing between quantum dots in closely spaced wires is observed, which underlines their potential for the realization of advanced quantum devices. The reported results open a path toward scalable qubit devices using nanowires on silicon.@eng bibo_authorlist: - foaf_Person: foaf_givenName: Fei foaf_name: Gao, Fei foaf_surname: Gao - foaf_Person: foaf_givenName: Jian-Huan foaf_name: Wang, Jian-Huan foaf_surname: Wang - foaf_Person: foaf_givenName: Hannes foaf_name: Watzinger, Hannes foaf_surname: Watzinger foaf_workInfoHomepage: http://www.librecat.org/personId=35DF8E50-F248-11E8-B48F-1D18A9856A87 - foaf_Person: foaf_givenName: Hao foaf_name: Hu, Hao foaf_surname: Hu - foaf_Person: foaf_givenName: Marko J. foaf_name: Rančić, Marko J. foaf_surname: Rančić - foaf_Person: foaf_givenName: Jie-Yin foaf_name: Zhang, Jie-Yin foaf_surname: Zhang - foaf_Person: foaf_givenName: Ting foaf_name: Wang, Ting foaf_surname: Wang - foaf_Person: foaf_givenName: Yuan foaf_name: Yao, Yuan foaf_surname: Yao - foaf_Person: foaf_givenName: Gui-Lei foaf_name: Wang, Gui-Lei foaf_surname: Wang - foaf_Person: foaf_givenName: Josip foaf_name: Kukucka, Josip foaf_surname: Kukucka foaf_workInfoHomepage: http://www.librecat.org/personId=3F5D8856-F248-11E8-B48F-1D18A9856A87 - foaf_Person: foaf_givenName: Lada foaf_name: Vukušić, Lada foaf_surname: Vukušić foaf_workInfoHomepage: http://www.librecat.org/personId=31E9F056-F248-11E8-B48F-1D18A9856A87 orcid: 0000-0003-2424-8636 - foaf_Person: foaf_givenName: Christoph foaf_name: Kloeffel, Christoph foaf_surname: Kloeffel - foaf_Person: foaf_givenName: Daniel foaf_name: Loss, Daniel foaf_surname: Loss - foaf_Person: foaf_givenName: Feng foaf_name: Liu, Feng foaf_surname: Liu - foaf_Person: foaf_givenName: Georgios foaf_name: Katsaros, Georgios foaf_surname: Katsaros foaf_workInfoHomepage: http://www.librecat.org/personId=38DB5788-F248-11E8-B48F-1D18A9856A87 orcid: 0000-0001-8342-202X - foaf_Person: foaf_givenName: Jian-Jun foaf_name: Zhang, Jian-Jun foaf_surname: Zhang bibo_doi: 10.1002/adma.201906523 bibo_issue: '16' bibo_volume: 32 dct_date: 2020^xs_gYear dct_identifier: - UT:000516660900001 dct_isPartOf: - http://id.crossref.org/issn/0935-9648 dct_language: eng dct_publisher: Wiley@ dct_title: Site-controlled uniform Ge/Si hut wires with electrically tunable spin-orbit coupling@ ...