{"_id":"5990","publisher":"Wiley","scopus_import":"1","quality_controlled":"1","oa_version":"Preprint","date_updated":"2023-09-19T14:29:58Z","day":"02","type":"journal_article","year":"2018","publication_identifier":{"issn":["0935-9648"]},"intvolume":"        30","article_number":"1802257","month":"11","article_processing_charge":"No","doi":"10.1002/adma.201802257","date_created":"2019-02-14T12:14:26Z","date_published":"2018-11-02T00:00:00Z","external_id":{"isi":["000450232800015"],"arxiv":["1809.08487"]},"volume":30,"status":"public","publication":"Advanced Materials","publication_status":"published","issue":"44","main_file_link":[{"open_access":"1","url":"https://arxiv.org/abs/1809.08487"}],"oa":1,"title":"Josephson effect in a few-hole quantum dot","language":[{"iso":"eng"}],"department":[{"_id":"GeKa"}],"user_id":"c635000d-4b10-11ee-a964-aac5a93f6ac1","author":[{"first_name":"Joost","full_name":"Ridderbos, Joost","last_name":"Ridderbos"},{"first_name":"Matthias","id":"33F94E3C-F248-11E8-B48F-1D18A9856A87","full_name":"Brauns, Matthias","last_name":"Brauns"},{"first_name":"Jie","last_name":"Shen","full_name":"Shen, Jie"},{"first_name":"Folkert K.","last_name":"de Vries","full_name":"de Vries, Folkert K."},{"first_name":"Ang","full_name":"Li, Ang","last_name":"Li"},{"first_name":"Erik P. A. M.","full_name":"Bakkers, Erik P. A. M.","last_name":"Bakkers"},{"last_name":"Brinkman","full_name":"Brinkman, Alexander","first_name":"Alexander"},{"last_name":"Zwanenburg","full_name":"Zwanenburg, Floris A.","first_name":"Floris A."}],"citation":{"apa":"Ridderbos, J., Brauns, M., Shen, J., de Vries, F. K., Li, A., Bakkers, E. P. A. M., … Zwanenburg, F. A. (2018). Josephson effect in a few-hole quantum dot. <i>Advanced Materials</i>. Wiley. <a href=\"https://doi.org/10.1002/adma.201802257\">https://doi.org/10.1002/adma.201802257</a>","ama":"Ridderbos J, Brauns M, Shen J, et al. Josephson effect in a few-hole quantum dot. <i>Advanced Materials</i>. 2018;30(44). doi:<a href=\"https://doi.org/10.1002/adma.201802257\">10.1002/adma.201802257</a>","short":"J. Ridderbos, M. Brauns, J. Shen, F.K. de Vries, A. Li, E.P.A.M. Bakkers, A. Brinkman, F.A. Zwanenburg, Advanced Materials 30 (2018).","mla":"Ridderbos, Joost, et al. “Josephson Effect in a Few-Hole Quantum Dot.” <i>Advanced Materials</i>, vol. 30, no. 44, 1802257, Wiley, 2018, doi:<a href=\"https://doi.org/10.1002/adma.201802257\">10.1002/adma.201802257</a>.","chicago":"Ridderbos, Joost, Matthias Brauns, Jie Shen, Folkert K. de Vries, Ang Li, Erik P. A. M. Bakkers, Alexander Brinkman, and Floris A. Zwanenburg. “Josephson Effect in a Few-Hole Quantum Dot.” <i>Advanced Materials</i>. Wiley, 2018. <a href=\"https://doi.org/10.1002/adma.201802257\">https://doi.org/10.1002/adma.201802257</a>.","ieee":"J. Ridderbos <i>et al.</i>, “Josephson effect in a few-hole quantum dot,” <i>Advanced Materials</i>, vol. 30, no. 44. Wiley, 2018.","ista":"Ridderbos J, Brauns M, Shen J, de Vries FK, Li A, Bakkers EPAM, Brinkman A, Zwanenburg FA. 2018. Josephson effect in a few-hole quantum dot. Advanced Materials. 30(44), 1802257."},"isi":1,"abstract":[{"text":"A Ge–Si core–shell nanowire is used to realize a Josephson field‐effect transistor with highly transparent contacts to superconducting leads. By changing the electric field, access to two distinct regimes, not combined before in a single device, is gained: in the accumulation mode the device is highly transparent and the supercurrent is carried by multiple subbands, while near depletion, the supercurrent is carried by single‐particle levels of a strongly coupled quantum dot operating in the few‐hole regime. These results establish Ge–Si nanowires as an important platform for hybrid superconductor–semiconductor physics and Majorana fermions.","lang":"eng"}]}