Alpichshev, ZhanybekIST Austria ; Biswas, Rudro ; Balatsky, Alexander ; Analytis, James ; Chu, Jiunhaw ; Fisher, Ian ; Kapitulnik, Aharon
In this Letter we present detailed study of the density of states near defects in Bi 2Se 3. In particular, we present data on the commonly found triangular defects in this system. While we do not find any measurable quasiparticle scattering interference effects, we do find localized resonances, which can be well fitted by theory once the potential is taken to be extended to properly account for the observed defects. The data together with the fits confirm that while the local density of states around the Dirac point of the electronic spectrum at the surface is significantly disrupted near the impurity by the creation of low-energy resonance state, the Dirac point is not locally destroyed. We discuss our results in terms of the expected protected surface state of topological insulators. © 2012 American Physical Society.
Physical Review Letters
Alpichshev Z, Biswas R, Balatsky A, et al. STM imaging of impurity resonances on Bi 2Se 3. Physical Review Letters. 2012;108(20). doi:10.1103/PhysRevLett.108.206402
Alpichshev, Z., Biswas, R., Balatsky, A., Analytis, J., Chu, J., Fisher, I., & Kapitulnik, A. (2012). STM imaging of impurity resonances on Bi 2Se 3. Physical Review Letters, 108(20). https://doi.org/10.1103/PhysRevLett.108.206402
Alpichshev, Zhanybek, Rudro Biswas, Alexander Balatsky, James Analytis, Jiunhaw Chu, Ian Fisher, and Aharon Kapitulnik. “STM Imaging of Impurity Resonances on Bi 2Se 3.” Physical Review Letters 108, no. 20 (2012). https://doi.org/10.1103/PhysRevLett.108.206402.
Z. Alpichshev et al., “STM imaging of impurity resonances on Bi 2Se 3,” Physical Review Letters, vol. 108, no. 20, 2012.
Alpichshev Z, Biswas R, Balatsky A, Analytis J, Chu J, Fisher I, Kapitulnik A. 2012. STM imaging of impurity resonances on Bi 2Se 3. Physical Review Letters. 108(20).
Alpichshev, Zhanybek, et al. “STM Imaging of Impurity Resonances on Bi 2Se 3.” Physical Review Letters, vol. 108, no. 20, American Physical Society, 2012, doi:10.1103/PhysRevLett.108.206402.
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