{"title":"Observation of spin-selective tunneling in sige nanocrystals","date_updated":"2021-01-12T06:53:00Z","date_created":"2018-12-11T11:53:50Z","author":[{"last_name":"Katsaros","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","first_name":"Georgios","full_name":"Georgios Katsaros"},{"last_name":"Golovach","first_name":"Vitaly","full_name":"Golovach, Vitaly N"},{"full_name":"Spathis, Panayotis N","last_name":"Spathis","first_name":"Panayotis"},{"first_name":"Natalia","last_name":"Ares","full_name":"Ares, Natalia"},{"full_name":"Stoffel, Mathieu","first_name":"Mathieu","last_name":"Stoffel"},{"last_name":"Fournel","first_name":"Frank","full_name":"Fournel, Frank"},{"full_name":"Schmidt, Oliver G","last_name":"Schmidt","first_name":"Oliver"},{"full_name":"Glazman, Leonid I","last_name":"Glazman","first_name":"Leonid"},{"full_name":"De Franceschi, Silvano","last_name":"De Franceschi","first_name":"Silvano"}],"intvolume":"       107","doi":"10.1103/PhysRevLett.107.246601","quality_controlled":0,"_id":"1755","year":"2011","day":"07","issue":"24","citation":{"mla":"Katsaros, Georgios, et al. “Observation of Spin-Selective Tunneling in Sige Nanocrystals.” <i>Physical Review Letters</i>, vol. 107, no. 24, American Physical Society, 2011, doi:<a href=\"https://doi.org/10.1103/PhysRevLett.107.246601\">10.1103/PhysRevLett.107.246601</a>.","ista":"Katsaros G, Golovach V, Spathis P, Ares N, Stoffel M, Fournel F, Schmidt O, Glazman L, De Franceschi S. 2011. Observation of spin-selective tunneling in sige nanocrystals. Physical Review Letters. 107(24).","ieee":"G. Katsaros <i>et al.</i>, “Observation of spin-selective tunneling in sige nanocrystals,” <i>Physical Review Letters</i>, vol. 107, no. 24. American Physical Society, 2011.","short":"G. Katsaros, V. Golovach, P. Spathis, N. Ares, M. Stoffel, F. Fournel, O. Schmidt, L. Glazman, S. De Franceschi, Physical Review Letters 107 (2011).","apa":"Katsaros, G., Golovach, V., Spathis, P., Ares, N., Stoffel, M., Fournel, F., … De Franceschi, S. (2011). Observation of spin-selective tunneling in sige nanocrystals. <i>Physical Review Letters</i>. American Physical Society. <a href=\"https://doi.org/10.1103/PhysRevLett.107.246601\">https://doi.org/10.1103/PhysRevLett.107.246601</a>","ama":"Katsaros G, Golovach V, Spathis P, et al. Observation of spin-selective tunneling in sige nanocrystals. <i>Physical Review Letters</i>. 2011;107(24). doi:<a href=\"https://doi.org/10.1103/PhysRevLett.107.246601\">10.1103/PhysRevLett.107.246601</a>","chicago":"Katsaros, Georgios, Vitaly Golovach, Panayotis Spathis, Natalia Ares, Mathieu Stoffel, Frank Fournel, Oliver Schmidt, Leonid Glazman, and Silvano De Franceschi. “Observation of Spin-Selective Tunneling in Sige Nanocrystals.” <i>Physical Review Letters</i>. American Physical Society, 2011. <a href=\"https://doi.org/10.1103/PhysRevLett.107.246601\">https://doi.org/10.1103/PhysRevLett.107.246601</a>."},"publisher":"American Physical Society","month":"12","publication":"Physical Review Letters","main_file_link":[{"open_access":"1","url":"http://arxiv.org/abs/1107.3919"}],"extern":1,"volume":107,"publication_status":"published","publist_id":"5369","type":"journal_article","date_published":"2011-12-07T00:00:00Z","acknowledgement":"The work was supported by the Agence Nationale de la Recherche (through the ACCESS and COHESION projects), U.S. DOE Contract No. DE-FG02-08ER46482 (Yale), and the Nanosciences Foundation at Grenoble, France. G. K. acknowledges support from the Deutsche Forschungsgemeinschaft","abstract":[{"text":"Spin-selective tunneling of holes in SiGe nanocrystals contacted by normal-metal leads is reported. The spin selectivity arises from an interplay of the orbital effect of the magnetic field with the strong spin-orbit interaction present in the valence band of the semiconductor. We demonstrate both experimentally and theoretically that spin-selective tunneling in semiconductor nanostructures can be achieved without the use of ferromagnetic contacts. The reported effect, which relies on mixing the light and heavy holes, should be observable in a broad class of quantum-dot systems formed in semiconductors with a degenerate valence band.","lang":"eng"}],"status":"public","oa":1}