{"doi":"10.1021/nl1017578","month":"09","page":"3545 - 3550","abstract":[{"text":"We investigate electronic transport in n-i-n GaN nanowires with and without AlN double barriers. The nanowires are grown by catalyst-free, plasma-assisted molecular beam epitaxy enabling abrupt GaN/AlN interfaces as well as longitudinal n-type doping modulation. At low temperature, transport in n-i-n GaN nanowires is dominated by the Coulomb blockade effect. Carriers are confined in the undoped middle region, forming single or multiple islands with a characteristic length of ∼100 nm. The incorporation of two AlN tunnel barriers causes confinement to occur within the GaN dot in between. In the case of a 6 nm thick dot and 2 nm thick barriers, we observe characteristic signatures of Coulomb-blockaded transport in single quantum dots with discrete energy states. For thinner dots and barriers, Coulomb-blockade effects do not play a significant role while the onset of resonant tunneling via the confined quantum levels is accompanied by a negative differential resistance surviving up to ∼150 K.","lang":"eng"}],"type":"journal_article","publisher":"American Chemical Society","date_updated":"2021-01-12T06:52:59Z","publication_status":"published","extern":1,"acknowledgement":"This research was partly funded by the Agence Nationale de la Recherche through the COHESION project. G.K. acknowledges further support from the Deutsche Forschungsgemeinschaft (Grant KA 2922/1-1)","main_file_link":[{"open_access":"1","url":"http://arxiv.org/abs/1005.3637"}],"year":"2010","status":"public","_id":"1753","publication":"Nano Letters","volume":10,"date_published":"2010-09-08T00:00:00Z","issue":"9","citation":{"mla":"Songmuang, Rudeeson, et al. “Quantum Transport in GaN/AlN Double-Barrier Heterostructure Nanowires.” Nano Letters, vol. 10, no. 9, American Chemical Society, 2010, pp. 3545–50, doi:10.1021/nl1017578.","apa":"Songmuang, R., Katsaros, G., Monroy, E., Spathis, P., Bougerol, C., Mongillo, M., & De Franceschi, S. (2010). Quantum transport in GaN/AlN double-barrier heterostructure nanowires. Nano Letters. American Chemical Society. https://doi.org/10.1021/nl1017578","ieee":"R. Songmuang et al., “Quantum transport in GaN/AlN double-barrier heterostructure nanowires,” Nano Letters, vol. 10, no. 9. American Chemical Society, pp. 3545–3550, 2010.","ama":"Songmuang R, Katsaros G, Monroy E, et al. Quantum transport in GaN/AlN double-barrier heterostructure nanowires. Nano Letters. 2010;10(9):3545-3550. doi:10.1021/nl1017578","chicago":"Songmuang, Rudeeson, Georgios Katsaros, Eva Monroy, Panayotis Spathis, Catherine Bougerol, Massimo Mongillo, and Silvano De Franceschi. “Quantum Transport in GaN/AlN Double-Barrier Heterostructure Nanowires.” Nano Letters. American Chemical Society, 2010. https://doi.org/10.1021/nl1017578.","ista":"Songmuang R, Katsaros G, Monroy E, Spathis P, Bougerol C, Mongillo M, De Franceschi S. 2010. Quantum transport in GaN/AlN double-barrier heterostructure nanowires. Nano Letters. 10(9), 3545–3550.","short":"R. Songmuang, G. Katsaros, E. Monroy, P. Spathis, C. Bougerol, M. Mongillo, S. De Franceschi, Nano Letters 10 (2010) 3545–3550."},"publist_id":"5371","day":"08","quality_controlled":0,"title":"Quantum transport in GaN/AlN double-barrier heterostructure nanowires","oa":1,"intvolume":" 10","date_created":"2018-12-11T11:53:49Z","author":[{"first_name":"Rudeeson","full_name":"Songmuang, Rudeeson","last_name":"Songmuang"},{"last_name":"Katsaros","full_name":"Georgios Katsaros","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","first_name":"Georgios"},{"last_name":"Monroy","full_name":"Monroy, Eva","first_name":"Eva"},{"last_name":"Spathis","full_name":"Spathis, Panayotis N","first_name":"Panayotis"},{"full_name":"Bougerol, Catherine","last_name":"Bougerol","first_name":"Catherine"},{"first_name":"Massimo","full_name":"Mongillo, Massimo","last_name":"Mongillo"},{"last_name":"De Franceschi","full_name":"De Franceschi, Silvano","first_name":"Silvano"}]}