Quantum transport in GaN/AlN double-barrier heterostructure nanowires

R. Songmuang, G. Katsaros, E. Monroy, P. Spathis, C. Bougerol, M. Mongillo, S. De Franceschi, Nano Letters 10 (2010) 3545–3550.


Journal Article | Published
Author
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Abstract
We investigate electronic transport in n-i-n GaN nanowires with and without AlN double barriers. The nanowires are grown by catalyst-free, plasma-assisted molecular beam epitaxy enabling abrupt GaN/AlN interfaces as well as longitudinal n-type doping modulation. At low temperature, transport in n-i-n GaN nanowires is dominated by the Coulomb blockade effect. Carriers are confined in the undoped middle region, forming single or multiple islands with a characteristic length of ∼100 nm. The incorporation of two AlN tunnel barriers causes confinement to occur within the GaN dot in between. In the case of a 6 nm thick dot and 2 nm thick barriers, we observe characteristic signatures of Coulomb-blockaded transport in single quantum dots with discrete energy states. For thinner dots and barriers, Coulomb-blockade effects do not play a significant role while the onset of resonant tunneling via the confined quantum levels is accompanied by a negative differential resistance surviving up to ∼150 K.
Publishing Year
Date Published
2010-09-08
Journal Title
Nano Letters
Acknowledgement
This research was partly funded by the Agence Nationale de la Recherche through the COHESION project. G.K. acknowledges further support from the Deutsche Forschungsgemeinschaft (Grant KA 2922/1-1)
Volume
10
Issue
9
Page
3545 - 3550
IST-REx-ID

Cite this

Songmuang R, Katsaros G, Monroy E, et al. Quantum transport in GaN/AlN double-barrier heterostructure nanowires. Nano Letters. 2010;10(9):3545-3550. doi:10.1021/nl1017578
Songmuang, R., Katsaros, G., Monroy, E., Spathis, P., Bougerol, C., Mongillo, M., & De Franceschi, S. (2010). Quantum transport in GaN/AlN double-barrier heterostructure nanowires. Nano Letters, 10(9), 3545–3550. https://doi.org/10.1021/nl1017578
Songmuang, Rudeeson, Georgios Katsaros, Eva Monroy, Panayotis Spathis, Catherine Bougerol, Massimo Mongillo, and Silvano De Franceschi. “Quantum Transport in GaN/AlN Double-Barrier Heterostructure Nanowires.” Nano Letters 10, no. 9 (2010): 3545–50. https://doi.org/10.1021/nl1017578.
R. Songmuang et al., “Quantum transport in GaN/AlN double-barrier heterostructure nanowires,” Nano Letters, vol. 10, no. 9, pp. 3545–3550, 2010.
Songmuang R, Katsaros G, Monroy E, Spathis P, Bougerol C, Mongillo M, De Franceschi S. 2010. Quantum transport in GaN/AlN double-barrier heterostructure nanowires. Nano Letters. 10(9), 3545–3550.
Songmuang, Rudeeson, et al. “Quantum Transport in GaN/AlN Double-Barrier Heterostructure Nanowires.” Nano Letters, vol. 10, no. 9, American Chemical Society, 2010, pp. 3545–50, doi:10.1021/nl1017578.

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