--- _id: '1750' abstract: - lang: eng text: The authors investigate the composition profile of SiGe islands after capping with Si to form quantum dots, using a two step etching procedure and atomic force microscopy. Initially, the Si capping layers are removed by etching selectively Si over Ge and then the composition of the disclosed islands is addressed by selectively etching Ge over Si. For samples grown at 580 °C the authors show that even when overgrowth leads to a flat Si surface and the islands undergo strong morphological changes, a Ge-rich core region is still preserved in the dot. At high growth and overgrowth temperatures (740 °C), the experiments show that the newly formed base of the buried islands is more Si rich than their top. Furthermore, the authors find that for the growth conditions used, no lateral motion takes place during capping. author: - first_name: Georgios full_name: Georgios Katsaros id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros - first_name: Mathieu full_name: Stoffel, Mathieu last_name: Stoffel - first_name: Armando full_name: Rastelli, Armando last_name: Rastelli - first_name: Oliver full_name: Schmidt, Oliver G last_name: Schmidt - first_name: Klaus full_name: Kern, Klaus last_name: Kern - first_name: Jerry full_name: Tersoff, Jerry last_name: Tersoff citation: ama: Katsaros G, Stoffel M, Rastelli A, Schmidt O, Kern K, Tersoff J. Three-dimensional isocompositional profiles of buried SiGeSi (001) islands. Applied Physics Letters. 2007;91(1). doi:10.1063/1.2752730 apa: Katsaros, G., Stoffel, M., Rastelli, A., Schmidt, O., Kern, K., & Tersoff, J. (2007). Three-dimensional isocompositional profiles of buried SiGeSi (001) islands. Applied Physics Letters. American Institute of Physics. https://doi.org/10.1063/1.2752730 chicago: Katsaros, Georgios, Mathieu Stoffel, Armando Rastelli, Oliver Schmidt, Klaus Kern, and Jerry Tersoff. “Three-Dimensional Isocompositional Profiles of Buried SiGeSi (001) Islands.” Applied Physics Letters. American Institute of Physics, 2007. https://doi.org/10.1063/1.2752730. ieee: G. Katsaros, M. Stoffel, A. Rastelli, O. Schmidt, K. Kern, and J. Tersoff, “Three-dimensional isocompositional profiles of buried SiGeSi (001) islands,” Applied Physics Letters, vol. 91, no. 1. American Institute of Physics, 2007. ista: Katsaros G, Stoffel M, Rastelli A, Schmidt O, Kern K, Tersoff J. 2007. Three-dimensional isocompositional profiles of buried SiGeSi (001) islands. Applied Physics Letters. 91(1). mla: Katsaros, Georgios, et al. “Three-Dimensional Isocompositional Profiles of Buried SiGeSi (001) Islands.” Applied Physics Letters, vol. 91, no. 1, American Institute of Physics, 2007, doi:10.1063/1.2752730. short: G. Katsaros, M. Stoffel, A. Rastelli, O. Schmidt, K. Kern, J. Tersoff, Applied Physics Letters 91 (2007). date_created: 2018-12-11T11:53:48Z date_published: 2007-01-01T00:00:00Z date_updated: 2021-01-12T06:52:58Z day: '01' doi: 10.1063/1.2752730 extern: 1 intvolume: ' 91' issue: '1' month: '01' publication: Applied Physics Letters publication_status: published publisher: American Institute of Physics publist_id: '5375' quality_controlled: 0 status: public title: Three-dimensional isocompositional profiles of buried SiGeSi (001) islands type: journal_article volume: 91 year: '2007' ...