---
_id: '1750'
abstract:
- lang: eng
text: The authors investigate the composition profile of SiGe islands after capping
with Si to form quantum dots, using a two step etching procedure and atomic force
microscopy. Initially, the Si capping layers are removed by etching selectively
Si over Ge and then the composition of the disclosed islands is addressed by selectively
etching Ge over Si. For samples grown at 580 °C the authors show that even when
overgrowth leads to a flat Si surface and the islands undergo strong morphological
changes, a Ge-rich core region is still preserved in the dot. At high growth and
overgrowth temperatures (740 °C), the experiments show that the newly formed base
of the buried islands is more Si rich than their top. Furthermore, the authors
find that for the growth conditions used, no lateral motion takes place during
capping.
author:
- first_name: Georgios
full_name: Georgios Katsaros
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
- first_name: Mathieu
full_name: Stoffel, Mathieu
last_name: Stoffel
- first_name: Armando
full_name: Rastelli, Armando
last_name: Rastelli
- first_name: Oliver
full_name: Schmidt, Oliver G
last_name: Schmidt
- first_name: Klaus
full_name: Kern, Klaus
last_name: Kern
- first_name: Jerry
full_name: Tersoff, Jerry
last_name: Tersoff
citation:
ama: Katsaros G, Stoffel M, Rastelli A, Schmidt O, Kern K, Tersoff J. Three-dimensional
isocompositional profiles of buried SiGeSi (001) islands. Applied Physics Letters.
2007;91(1). doi:10.1063/1.2752730
apa: Katsaros, G., Stoffel, M., Rastelli, A., Schmidt, O., Kern, K., & Tersoff,
J. (2007). Three-dimensional isocompositional profiles of buried SiGeSi (001)
islands. Applied Physics Letters. American Institute of Physics. https://doi.org/10.1063/1.2752730
chicago: Katsaros, Georgios, Mathieu Stoffel, Armando Rastelli, Oliver Schmidt,
Klaus Kern, and Jerry Tersoff. “Three-Dimensional Isocompositional Profiles of
Buried SiGeSi (001) Islands.” Applied Physics Letters. American Institute
of Physics, 2007. https://doi.org/10.1063/1.2752730.
ieee: G. Katsaros, M. Stoffel, A. Rastelli, O. Schmidt, K. Kern, and J. Tersoff,
“Three-dimensional isocompositional profiles of buried SiGeSi (001) islands,”
Applied Physics Letters, vol. 91, no. 1. American Institute of Physics,
2007.
ista: Katsaros G, Stoffel M, Rastelli A, Schmidt O, Kern K, Tersoff J. 2007. Three-dimensional
isocompositional profiles of buried SiGeSi (001) islands. Applied Physics Letters.
91(1).
mla: Katsaros, Georgios, et al. “Three-Dimensional Isocompositional Profiles of
Buried SiGeSi (001) Islands.” Applied Physics Letters, vol. 91, no. 1,
American Institute of Physics, 2007, doi:10.1063/1.2752730.
short: G. Katsaros, M. Stoffel, A. Rastelli, O. Schmidt, K. Kern, J. Tersoff, Applied
Physics Letters 91 (2007).
date_created: 2018-12-11T11:53:48Z
date_published: 2007-01-01T00:00:00Z
date_updated: 2021-01-12T06:52:58Z
day: '01'
doi: 10.1063/1.2752730
extern: 1
intvolume: ' 91'
issue: '1'
month: '01'
publication: Applied Physics Letters
publication_status: published
publisher: American Institute of Physics
publist_id: '5375'
quality_controlled: 0
status: public
title: Three-dimensional isocompositional profiles of buried SiGeSi (001) islands
type: journal_article
volume: 91
year: '2007'
...