{"publication":"Applied Physics Letters","year":"2005","volume":87,"acknowledgement":"This work was supported by the BMBF (03N8711) and the EU NOE SANDiE","citation":{"apa":"Zhong, Z., Katsaros, G., Stoffel, M., Costantini, G., Kern, K., Schmidt, O., … Bauer, G. (2005). Periodic pillar structures by Si etching of multilayer GeSi/Si islands. <i>Applied Physics Letters</i>. American Institute of Physics. <a href=\"https://doi.org/10.1063/1.2150278\">https://doi.org/10.1063/1.2150278</a>","chicago":"Zhong, Zheyang, Georgios Katsaros, Mathieu Stoffel, Giovanni Costantini, Klaus Kern, Oliver Schmidt, Neng Jin Phillipp, and Günther Bauer. “Periodic Pillar Structures by Si Etching of Multilayer GeSi/Si Islands.” <i>Applied Physics Letters</i>. American Institute of Physics, 2005. <a href=\"https://doi.org/10.1063/1.2150278\">https://doi.org/10.1063/1.2150278</a>.","short":"Z. Zhong, G. Katsaros, M. Stoffel, G. Costantini, K. Kern, O. Schmidt, N. Jin Phillipp, G. Bauer, Applied Physics Letters 87 (2005) 1–3.","mla":"Zhong, Zheyang, et al. “Periodic Pillar Structures by Si Etching of Multilayer GeSi/Si Islands.” <i>Applied Physics Letters</i>, vol. 87, no. 26, American Institute of Physics, 2005, pp. 1–3, doi:<a href=\"https://doi.org/10.1063/1.2150278\">10.1063/1.2150278</a>.","ieee":"Z. Zhong <i>et al.</i>, “Periodic pillar structures by Si etching of multilayer GeSi/Si islands,” <i>Applied Physics Letters</i>, vol. 87, no. 26. American Institute of Physics, pp. 1–3, 2005.","ama":"Zhong Z, Katsaros G, Stoffel M, et al. Periodic pillar structures by Si etching of multilayer GeSi/Si islands. <i>Applied Physics Letters</i>. 2005;87(26):1-3. doi:<a href=\"https://doi.org/10.1063/1.2150278\">10.1063/1.2150278</a>","ista":"Zhong Z, Katsaros G, Stoffel M, Costantini G, Kern K, Schmidt O, Jin Phillipp N, Bauer G. 2005. Periodic pillar structures by Si etching of multilayer GeSi/Si islands. Applied Physics Letters. 87(26), 1–3."},"page":"1 - 3","publist_id":"5381","type":"journal_article","status":"public","month":"01","day":"01","publication_status":"published","author":[{"full_name":"Zhong, Zheyang","first_name":"Zheyang","last_name":"Zhong"},{"full_name":"Georgios Katsaros","first_name":"Georgios","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","last_name":"Katsaros"},{"first_name":"Mathieu","full_name":"Stoffel, Mathieu","last_name":"Stoffel"},{"last_name":"Costantini","first_name":"Giovanni","full_name":"Costantini, Giovanni"},{"full_name":"Kern, Klaus","first_name":"Klaus","last_name":"Kern"},{"full_name":"Schmidt, Oliver G","first_name":"Oliver","last_name":"Schmidt"},{"first_name":"Neng","full_name":"Jin-Phillipp, Neng Y","last_name":"Jin Phillipp"},{"last_name":"Bauer","first_name":"Günther","full_name":"Bauer, Günther"}],"publisher":"American Institute of Physics","title":"Periodic pillar structures by Si etching of multilayer GeSi/Si islands","intvolume":"        87","doi":"10.1063/1.2150278","abstract":[{"lang":"eng","text":"Laterally aligned multilayer GeSiSi islands grown on a patterned Si (001) substrate are disclosed by selective etching of Si in a KOH solution. This procedure allows us to visualize the vertical alignment of the islands in a three-dimensional perspective. Our technique reveals that partly coalesced double islands in the initial layer do not merge together, but instead gradually reproduce into well-separated double islands in upper layers. We attribute this effect to very thin spacer layers, which efficiently transfer the strain modulation of each island through the spacer layer to the surface. The etching rate of Si is reduced in tensile strained regions, which helps to preserve sufficient Si between the stacked islands to form a periodic array of freestanding and vertically modulated heterostructure pillars."}],"_id":"1743","extern":1,"quality_controlled":0,"date_updated":"2021-01-12T06:52:55Z","date_created":"2018-12-11T11:53:46Z","issue":"26","date_published":"2005-01-01T00:00:00Z"}