--- res: bibo_abstract: - Laterally aligned multilayer GeSiSi islands grown on a patterned Si (001) substrate are disclosed by selective etching of Si in a KOH solution. This procedure allows us to visualize the vertical alignment of the islands in a three-dimensional perspective. Our technique reveals that partly coalesced double islands in the initial layer do not merge together, but instead gradually reproduce into well-separated double islands in upper layers. We attribute this effect to very thin spacer layers, which efficiently transfer the strain modulation of each island through the spacer layer to the surface. The etching rate of Si is reduced in tensile strained regions, which helps to preserve sufficient Si between the stacked islands to form a periodic array of freestanding and vertically modulated heterostructure pillars.@eng bibo_authorlist: - foaf_Person: foaf_givenName: Zheyang foaf_name: Zhong, Zheyang foaf_surname: Zhong - foaf_Person: foaf_givenName: Georgios foaf_name: Georgios Katsaros foaf_surname: Katsaros foaf_workInfoHomepage: http://www.librecat.org/personId=38DB5788-F248-11E8-B48F-1D18A9856A87 - foaf_Person: foaf_givenName: Mathieu foaf_name: Stoffel, Mathieu foaf_surname: Stoffel - foaf_Person: foaf_givenName: Giovanni foaf_name: Costantini, Giovanni foaf_surname: Costantini - foaf_Person: foaf_givenName: Klaus foaf_name: Kern, Klaus foaf_surname: Kern - foaf_Person: foaf_givenName: Oliver foaf_name: Schmidt, Oliver G foaf_surname: Schmidt - foaf_Person: foaf_givenName: Neng foaf_name: Jin-Phillipp, Neng Y foaf_surname: Jin Phillipp - foaf_Person: foaf_givenName: Günther foaf_name: Bauer, Günther foaf_surname: Bauer bibo_doi: 10.1063/1.2150278 bibo_issue: '26' bibo_volume: 87 dct_date: 2005^xs_gYear dct_publisher: American Institute of Physics@ dct_title: Periodic pillar structures by Si etching of multilayer GeSi/Si islands@ ...