--- res: bibo_abstract: - The effects of substrate temperature, growth rate, and postgrowth annealing on the composition of Ge islands grown on Si(001) were investigated with a combination of selective wet chemical etching and atomic force microscopy. A simple kinetic model comprising only surface diffusion processes can explain all the experimentally observed compositional profiles for pyramid and dome islands grown in the 560-620°C range. From this model three-dimensional compositional maps were extracted. By performing annealing experiments a change in the composition of the domes was observed. This could be explained as the result of the islands' movement induced by alloying-driven energy minimization. Also in this case kinetically hindered bulk diffusion processes are not needed to explain the experimental observations.@eng bibo_authorlist: - foaf_Person: foaf_givenName: Georgios foaf_name: Georgios Katsaros foaf_surname: Katsaros foaf_workInfoHomepage: http://www.librecat.org/personId=38DB5788-F248-11E8-B48F-1D18A9856A87 - foaf_Person: foaf_givenName: Giovanni foaf_name: Costantini, Giovanni foaf_surname: Costantini - foaf_Person: foaf_givenName: Mathieu foaf_name: Stoffel, Mathieu foaf_surname: Stoffel - foaf_Person: foaf_givenName: Rubén foaf_name: Esteban, Rubén foaf_surname: Esteban - foaf_Person: foaf_givenName: Alexander foaf_name: Bittner, Alexander M foaf_surname: Bittner - foaf_Person: foaf_givenName: Armando foaf_name: Rastelli, Armando foaf_surname: Rastelli - foaf_Person: foaf_givenName: Ulrich foaf_name: Denker, Ulrich foaf_surname: Denker - foaf_Person: foaf_givenName: Oliver foaf_name: Schmidt, Oliver G foaf_surname: Schmidt - foaf_Person: foaf_givenName: Klaus foaf_name: Kern, Klaus foaf_surname: Kern bibo_doi: 10.1103/PhysRevB.72.195320 bibo_issue: '19' bibo_volume: 72 dct_date: 2005^xs_gYear dct_publisher: American Physical Society@ dct_title: Kinetic origin of island intermixing during the growth of Ge on Si (001)@ ...