{"_id":"1741","quality_controlled":0,"title":"Lateral motion of SiGe islands driven by surface-mediated alloying","date_created":"2018-12-11T11:53:46Z","publication":"Physical Review Letters","month":"06","date_updated":"2021-01-12T06:52:54Z","volume":94,"day":"03","type":"journal_article","year":"2005","status":"public","author":[{"first_name":"Ulrich","full_name":"Denker, Ulrich","last_name":"Denker"},{"first_name":"Armando","full_name":"Rastelli, Armando","last_name":"Rastelli"},{"first_name":"Mathieu","full_name":"Stoffel, Mathieu","last_name":"Stoffel"},{"first_name":"Jerry","full_name":"Tersoff, Jerry","last_name":"Tersoff"},{"first_name":"Georgios","id":"38DB5788-F248-11E8-B48F-1D18A9856A87","full_name":"Georgios Katsaros","last_name":"Katsaros"},{"full_name":"Costantini, Giovanni","last_name":"Costantini","first_name":"Giovanni"},{"full_name":"Kern, Klaus","last_name":"Kern","first_name":"Klaus"},{"first_name":"Neng","last_name":"Jin Phillipp","full_name":"Jin-Phillipp, Neng Y"},{"first_name":"David","full_name":"Jesson, David E","last_name":"Jesson"},{"first_name":"Oliver","full_name":"Schmidt, Oliver G","last_name":"Schmidt"}],"date_published":"2005-06-03T00:00:00Z","doi":"10.1103/PhysRevLett.94.216103","acknowledgement":"The work was supported by the BMBF (03N8711)","publication_status":"published","citation":{"ama":"Denker U, Rastelli A, Stoffel M, et al. Lateral motion of SiGe islands driven by surface-mediated alloying. <i>Physical Review Letters</i>. 2005;94(21). doi:<a href=\"https://doi.org/10.1103/PhysRevLett.94.216103\">10.1103/PhysRevLett.94.216103</a>","ieee":"U. Denker <i>et al.</i>, “Lateral motion of SiGe islands driven by surface-mediated alloying,” <i>Physical Review Letters</i>, vol. 94, no. 21. American Physical Society, 2005.","chicago":"Denker, Ulrich, Armando Rastelli, Mathieu Stoffel, Jerry Tersoff, Georgios Katsaros, Giovanni Costantini, Klaus Kern, Neng Jin Phillipp, David Jesson, and Oliver Schmidt. “Lateral Motion of SiGe Islands Driven by Surface-Mediated Alloying.” <i>Physical Review Letters</i>. American Physical Society, 2005. <a href=\"https://doi.org/10.1103/PhysRevLett.94.216103\">https://doi.org/10.1103/PhysRevLett.94.216103</a>.","mla":"Denker, Ulrich, et al. “Lateral Motion of SiGe Islands Driven by Surface-Mediated Alloying.” <i>Physical Review Letters</i>, vol. 94, no. 21, American Physical Society, 2005, doi:<a href=\"https://doi.org/10.1103/PhysRevLett.94.216103\">10.1103/PhysRevLett.94.216103</a>.","ista":"Denker U, Rastelli A, Stoffel M, Tersoff J, Katsaros G, Costantini G, Kern K, Jin Phillipp N, Jesson D, Schmidt O. 2005. Lateral motion of SiGe islands driven by surface-mediated alloying. Physical Review Letters. 94(21).","short":"U. Denker, A. Rastelli, M. Stoffel, J. Tersoff, G. Katsaros, G. Costantini, K. Kern, N. Jin Phillipp, D. Jesson, O. Schmidt, Physical Review Letters 94 (2005).","apa":"Denker, U., Rastelli, A., Stoffel, M., Tersoff, J., Katsaros, G., Costantini, G., … Schmidt, O. (2005). Lateral motion of SiGe islands driven by surface-mediated alloying. <i>Physical Review Letters</i>. American Physical Society. <a href=\"https://doi.org/10.1103/PhysRevLett.94.216103\">https://doi.org/10.1103/PhysRevLett.94.216103</a>"},"publisher":"American Physical Society","abstract":[{"text":"SiGe islands move laterally on a Si(001) substrate during in situ postgrowth annealing. This surprising behavior is revealed by an analysis of the substrate surface morphology after island removal using wet chemical etching. We explain the island motion by asymmetric surface-mediated alloying. Material leaves one side of the island by surface diffusion, and mixes with additional Si from the surrounding surface as it redeposits on the other side. Thus the island moves laterally while becoming larger and more dilute.","lang":"eng"}],"publist_id":"5383","extern":1,"issue":"21","intvolume":"        94"}