Lateral motion of SiGe islands driven by surface-mediated alloying

U. Denker, A. Rastelli, M. Stoffel, J. Tersoff, G. Katsaros, G. Costantini, K. Kern, N. Jin Phillipp, D. Jesson, O. Schmidt, Physical Review Letters 94 (2005).

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Abstract
SiGe islands move laterally on a Si(001) substrate during in situ postgrowth annealing. This surprising behavior is revealed by an analysis of the substrate surface morphology after island removal using wet chemical etching. We explain the island motion by asymmetric surface-mediated alloying. Material leaves one side of the island by surface diffusion, and mixes with additional Si from the surrounding surface as it redeposits on the other side. Thus the island moves laterally while becoming larger and more dilute.
Publishing Year
Date Published
2005-06-03
Journal Title
Physical Review Letters
Acknowledgement
The work was supported by the BMBF (03N8711)
Volume
94
Issue
21
IST-REx-ID

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Denker U, Rastelli A, Stoffel M, et al. Lateral motion of SiGe islands driven by surface-mediated alloying. Physical Review Letters. 2005;94(21). doi:10.1103/PhysRevLett.94.216103
Denker, U., Rastelli, A., Stoffel, M., Tersoff, J., Katsaros, G., Costantini, G., … Schmidt, O. (2005). Lateral motion of SiGe islands driven by surface-mediated alloying. Physical Review Letters, 94(21). https://doi.org/10.1103/PhysRevLett.94.216103
Denker, Ulrich, Armando Rastelli, Mathieu Stoffel, Jerry Tersoff, Georgios Katsaros, Giovanni Costantini, Klaus Kern, Neng Jin Phillipp, David Jesson, and Oliver Schmidt. “Lateral Motion of SiGe Islands Driven by Surface-Mediated Alloying.” Physical Review Letters 94, no. 21 (2005). https://doi.org/10.1103/PhysRevLett.94.216103.
U. Denker et al., “Lateral motion of SiGe islands driven by surface-mediated alloying,” Physical Review Letters, vol. 94, no. 21, 2005.
Denker U, Rastelli A, Stoffel M, Tersoff J, Katsaros G, Costantini G, Kern K, Jin Phillipp N, Jesson D, Schmidt O. 2005. Lateral motion of SiGe islands driven by surface-mediated alloying. Physical Review Letters. 94(21).
Denker, Ulrich, et al. “Lateral Motion of SiGe Islands Driven by Surface-Mediated Alloying.” Physical Review Letters, vol. 94, no. 21, American Physical Society, 2005, doi:10.1103/PhysRevLett.94.216103.

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