Quantum electromechanics on silicon nitride nanomembranes

J.M. Fink, M. Kalaee, A. Pitanti, R. Norte, L. Heinzle, M. Davanço, K. Srinivasan, O. Painter, Nature Communications 7 (2016).

OA IST-2016-629-v1+1_ncomms12396.pdf 2.14 MB

Journal Article | Published | English
Fink, Johannes MIST Austria ; Kalaee, Mahmoud; Pitanti, Alessandro; Norte, Richard; Heinzle, Lukas; Davanço, Marcelo; Srinivasan, Kartik; Painter, Oskar
Radiation pressure has recently been used to effectively couple the quantum motion of mechanical elements to the fields of optical or microwave light. Integration of all three degrees of freedom—mechanical, optical and microwave—would enable a quantum interconnect between microwave and optical quantum systems. We present a platform based on silicon nitride nanomembranes for integrating superconducting microwave circuits with planar acoustic and optical devices such as phononic and photonic crystals. Using planar capacitors with vacuum gaps of 60 nm and spiral inductor coils of micron pitch we realize microwave resonant circuits with large electromechanical coupling to planar acoustic structures of nanoscale dimensions and femtoFarad motional capacitance. Using this enhanced coupling, we demonstrate microwave backaction cooling of the 4.48 MHz mechanical resonance of a nanobeam to an occupancy as low as 0.32. These results indicate the viability of silicon nitride nanomembranes as an all-in-one substrate for quantum electro-opto-mechanical experiments.
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This work was supported by the DARPA MESO programme, the Institute for Quantum Information and Matter, an NSF Physics Frontiers Center with support of the Gordon and Betty Moore Foundation, and the Kavli Nanoscience Institute at Caltech. A.P. was supported by a Marie Curie International Outgoing Fellowship within the 7th European Community Framework Programme, NEMO (GA 298861). Certain commercial equipment and software are identified in this documentation to describe the subject adequately. Such identification does not imply recommendation or endorsement by the NIST, nor does it imply that the equipment identified is necessarily the best available for the purpose.
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Fink JM, Kalaee M, Pitanti A, et al. Quantum electromechanics on silicon nitride nanomembranes. Nature Communications. 2016;7. doi:10.1038/ncomms12396
Fink, J. M., Kalaee, M., Pitanti, A., Norte, R., Heinzle, L., Davanço, M., … Painter, O. (2016). Quantum electromechanics on silicon nitride nanomembranes. Nature Communications, 7. https://doi.org/10.1038/ncomms12396
Fink, Johannes M, Mahmoud Kalaee, Alessandro Pitanti, Richard Norte, Lukas Heinzle, Marcelo Davanço, Kartik Srinivasan, and Oskar Painter. “Quantum Electromechanics on Silicon Nitride Nanomembranes.” Nature Communications 7 (2016). https://doi.org/10.1038/ncomms12396.
J. M. Fink et al., “Quantum electromechanics on silicon nitride nanomembranes,” Nature Communications, vol. 7, 2016.
Fink JM, Kalaee M, Pitanti A, Norte R, Heinzle L, Davanço M, Srinivasan K, Painter O. 2016. Quantum electromechanics on silicon nitride nanomembranes. Nature Communications. 7.
Fink, Johannes M., et al. “Quantum Electromechanics on Silicon Nitride Nanomembranes.” Nature Communications, vol. 7, 12396, Nature Publishing Group, 2016, doi:10.1038/ncomms12396.
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