Juan Carlos A Sobarzo Ponce

Graduate School
Waitukaitis Group

3 Publications

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[3]
2024 | Journal Article | IST-REx-ID: 15322
J. C. A. Sobarzo Ponce and S. R. Waitukaitis, “Multiple charge carrier species as a possible cause for triboelectric cycles,” Physical Review E, vol. 109, no. 3. American Physical Society, 2024.
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[2]
2022 | Journal Article | IST-REx-ID: 12109 | OA
F. Pertl, J. C. A. Sobarzo Ponce, L. B. Shafeek, T. Cramer, and S. R. Waitukaitis, “Quantifying nanoscale charge density features of contact-charged surfaces with an FEM/KPFM-hybrid approach,” Physical Review Materials, vol. 6, no. 12. American Physical Society, 2022.
[Preprint] View | DOI | Download Preprint (ext.) | WoS | arXiv
 
[1]
2020 | Journal Article | IST-REx-ID: 8101 | OA
G. M. Grosjean, S. Wald, J. C. A. Sobarzo Ponce, and S. R. Waitukaitis, “Quantitatively consistent scale-spanning model for same-material tribocharging,” Physical Review Materials, vol. 4, no. 8. American Physical Society, 2020.
[Published Version] View | Files available | DOI | WoS | arXiv
 
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3 Publications

Mark all

[3]
2024 | Journal Article | IST-REx-ID: 15322
J. C. A. Sobarzo Ponce and S. R. Waitukaitis, “Multiple charge carrier species as a possible cause for triboelectric cycles,” Physical Review E, vol. 109, no. 3. American Physical Society, 2024.
View | DOI
 
[2]
2022 | Journal Article | IST-REx-ID: 12109 | OA
F. Pertl, J. C. A. Sobarzo Ponce, L. B. Shafeek, T. Cramer, and S. R. Waitukaitis, “Quantifying nanoscale charge density features of contact-charged surfaces with an FEM/KPFM-hybrid approach,” Physical Review Materials, vol. 6, no. 12. American Physical Society, 2022.
[Preprint] View | DOI | Download Preprint (ext.) | WoS | arXiv
 
[1]
2020 | Journal Article | IST-REx-ID: 8101 | OA
G. M. Grosjean, S. Wald, J. C. A. Sobarzo Ponce, and S. R. Waitukaitis, “Quantitatively consistent scale-spanning model for same-material tribocharging,” Physical Review Materials, vol. 4, no. 8. American Physical Society, 2020.
[Published Version] View | Files available | DOI | WoS | arXiv
 
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    Citation Style: IEEE

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