Georgios Katsaros
Katsaros Group
50 Publications
2024 | Journal Article | IST-REx-ID: 14793 |
Valentini M, Sagi O, Baghumyan L, et al. Parity-conserving Cooper-pair transport and ideal superconducting diode in planar germanium. Nature Communications. 2024;15. doi:10.1038/s41467-023-44114-0
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2024 | Journal Article | IST-REx-ID: 15018 |
Shimura Y, Godfrin C, Hikavyy A, et al. Compressively strained epitaxial Ge layers for quantum computing applications. Materials Science in Semiconductor Processing. 2024;174(5). doi:10.1016/j.mssp.2024.108231
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2024 | Journal Article | IST-REx-ID: 15320 |
Seoane Souto R, Leijnse M, Schrade C, Valentini M, Katsaros G, Danon J. Tuning the Josephson diode response with an ac current. Physical Review Research. 2024;6(2). doi:10.1103/PhysRevResearch.6.L022002
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2023 | Preprint | IST-REx-ID: 13312 |
Valentini M, Sagi O, Baghumyan L, et al. Radio frequency driven superconducting diode and parity conserving Cooper pair transport in a two-dimensional germanium hole gas. arXiv. doi:10.48550/arXiv.2306.07109
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2022 | Journal Article | IST-REx-ID: 10920 |
Jirovec D, Mutter PM, Hofmann AC, et al. Dynamics of hole singlet-triplet qubits with large g-factor differences. Physical Review Letters. 2022;128(12). doi:10.1103/PhysRevLett.128.126803
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| arXiv
2022 | Journal Article | IST-REx-ID: 12118 |
Valentini M, Borovkov M, Prada E, et al. Majorana-like Coulomb spectroscopy in the absence of zero-bias peaks. Nature. 2022;612(7940):442-447. doi:10.1038/s41586-022-05382-w
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2021 | Conference Paper | IST-REx-ID: 9464
Gao F, Zhang JY, Wang JH, et al. Ge/Si quantum wires for quantum computing. In: 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021. IEEE; 2021. doi:10.1109/EDTM50988.2021.9420817
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2021 | Research Data | IST-REx-ID: 9291 |
Katsaros G. Raw transport data for: Enhancement of proximity induced superconductivity in planar germanium. 2021. doi:10.15479/AT:ISTA:9291
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2021 | Journal Article | IST-REx-ID: 8910 |
Valentini M, Peñaranda F, Hofmann AC, et al. Nontopological zero-bias peaks in full-shell nanowires induced by flux-tunable Andreev states. Science. 2021;373(6550). doi:10.1126/science.abf1513
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2021 | Journal Article | IST-REx-ID: 10559 |
Aggarwal K, Hofmann AC, Jirovec D, et al. Enhancement of proximity-induced superconductivity in a planar Ge hole gas. Physical Review Research. 2021;3(2). doi:10.1103/physrevresearch.3.l022005
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2021 | Journal Article | IST-REx-ID: 8911 |
Scappucci G, Kloeffel C, Zwanenburg FA, et al. The germanium quantum information route. Nature Reviews Materials. 2021;6:926–943. doi:10.1038/s41578-020-00262-z
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2021 | Journal Article | IST-REx-ID: 8909 |
Jirovec D, Hofmann AC, Ballabio A, et al. A singlet triplet hole spin qubit in planar Ge. Nature Materials. 2021;20(8):1106–1112. doi:10.1038/s41563-021-01022-2
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2021 | Preprint | IST-REx-ID: 10066 |
Severin B, Lennon DT, Camenzind LC, Vigneau F, Fedele F, Jirovec D, Ballabio A, Chrastina D, Isella G, Kruijf M de, Carballido MJ, Svab S, Kuhlmann AV, Braakman FR, Geyer S, Froning FNM, Moon H, Osborne MA, Sejdinovic D, Katsaros G, Zumbühl DM, Briggs GAD, Ares N. Cross-architecture tuning of silicon and SiGe-based quantum devices using machine learning. arXiv, 2107.12975.
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2020 | Research Data | IST-REx-ID: 8834 |
Katsaros G. Enhancement of proximity induced superconductivity in planar Germanium. 2020. doi:10.15479/AT:ISTA:8834
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2020 | Journal Article | IST-REx-ID: 7541 |
Gao F, Wang J-H, Watzinger H, et al. Site-controlled uniform Ge/Si hut wires with electrically tunable spin-orbit coupling. Advanced Materials. 2020;32(16). doi:10.1002/adma.201906523
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2020 | Research Data | IST-REx-ID: 9222 |
Katsaros G. Transport data for: Site‐controlled uniform Ge/Si Hut wires with electrically tunable spin–orbit coupling. 2020. doi:10.15479/AT:ISTA:9222
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2020 | Journal Article | IST-REx-ID: 8203 |
Katsaros G, Kukucka J, Vukušić L, et al. Zero field splitting of heavy-hole states in quantum dots. Nano Letters. 2020;20(7):5201-5206. doi:10.1021/acs.nanolett.0c01466
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2020 | Research Data | IST-REx-ID: 7689 |
Katsaros G. Supplementary data for “Zero field splitting of heavy-hole states in quantum dots.” 2020. doi:10.15479/AT:ISTA:7689
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2020 | Preprint | IST-REx-ID: 8831 |
Aggarwal K, Hofmann AC, Jirovec D, et al. Enhancement of proximity induced superconductivity in planar Germanium. arXiv.
[Submitted Version]
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2019 | Preprint | IST-REx-ID: 10065 |
Hofmann AC, Jirovec D, Borovkov M, et al. Assessing the potential of Ge/SiGe quantum dots as hosts for singlet-triplet qubits. arXiv. doi:10.48550/arXiv.1910.05841
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2018 | Journal Article | IST-REx-ID: 77 |
Watzinger H, Kukucka J, Vukušić L, et al. A germanium hole spin qubit. Nature Communications. 2018;9(3902). doi:10.1038/s41467-018-06418-4
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2018 | Journal Article | IST-REx-ID: 23 |
Vukušić L, Kukucka J, Watzinger H, Milem JM, Schäffler F, Katsaros G. Single-shot readout of hole spins in Ge. Nano Letters. 2018;18(11):7141-7145. doi:10.1021/acs.nanolett.8b03217
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2017 | Journal Article | IST-REx-ID: 840 |
Vukušić L, Kukucka J, Watzinger H, Katsaros G. Fast hole tunneling times in germanium hut wires probed by single-shot reflectometry. Nano Letters. 2017;17(9):5706-5710. doi:10.1021/acs.nanolett.7b02627
[Published Version]
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2016 | Journal Article | IST-REx-ID: 1328 |
Watzinger H, Kloeffel C, Vukušić L, et al. Heavy-hole states in germanium hut wires. Nano Letters. 2016;16(11):6879-6885. doi:10.1021/acs.nanolett.6b02715
[Published Version]
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2014 | Journal Article | IST-REx-ID: 1761 |
Mongillo M, Spathis P, Katsaros G, et al. PtSi clustering in silicon probed by transport spectroscopy. Physical Review X. 2014;3(4). doi:10.1103/PhysRevX.3.041025
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2013 | Journal Article | IST-REx-ID: 1760 |
Ares N, Katsaros G, Golovach V, et al. SiGe quantum dots for fast hole spin Rabi oscillations. Applied Physics Letters. 2013;103(26). doi:10.1063/1.4858959
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2013 | Journal Article | IST-REx-ID: 1759 |
Ares N, Golovach V, Katsaros G, et al. Nature of tunable hole g factors in quantum dots. Physical Review Letters. 2013;110(4). doi:10.1103/PhysRevLett.110.046602
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2012 | Journal Article | IST-REx-ID: 1757 |
Zhang J, Katsaros G, Montalenti F, et al. Monolithic growth of ultrathin Ge nanowires on Si(001) . Physical Review Letters. 2012;109(8). doi:10.1103/PhysRevLett.109.085502
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2012 | Journal Article | IST-REx-ID: 1758 |
Lee E, Jiang X, Aguado R, Katsaros G, Lieber C, De Franceschi S. Zero-bias anomaly in a nanowire quantum dot coupled to superconductors. Physical Review Letters. 2012;109(18). doi:10.1103/PhysRevLett.109.186802
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2012 | Journal Article | IST-REx-ID: 1756 |
Mongillo M, Spathis P, Katsaros G, Gentile P, De Franceschi S. Multifunctional devices and logic gates with undoped silicon nanowires. Nano Letters. 2012;12(6):3074-3079. doi:10.1021/nl300930m
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2011 | Journal Article | IST-REx-ID: 1754 |
Mongillo M, Spathis P, Katsaros G, Gentile P, Sanquer M, De Franceschi S. Joule-assisted silicidation for short-channel silicon nanowire devices. ACS Nano. 2011;5(9):7117-7123. doi:10.1021/nn202524j
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2011 | Journal Article | IST-REx-ID: 1755 |
Katsaros G, Golovach V, Spathis P, et al. Observation of spin-selective tunneling in sige nanocrystals. Physical Review Letters. 2011;107(24). doi:10.1103/PhysRevLett.107.246601
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2010 | Journal Article | IST-REx-ID: 1752 |
Katsaros G, Spathis P, Stoffel M, et al. Hybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals on silicon. Nature Nanotechnology. 2010;5(6):458-464. doi:10.1038/nnano.2010.84
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2010 | Journal Article | IST-REx-ID: 1753 |
Songmuang R, Katsaros G, Monroy E, et al. Quantum transport in GaN/AlN double-barrier heterostructure nanowires. Nano Letters. 2010;10(9):3545-3550. doi:10.1021/nl1017578
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2008 | Journal Article | IST-REx-ID: 1751
Katsaros G, Tersoff J, Stoffel M, et al. Positioning of strained islands by interaction with surface nanogrooves. Physical Review Letters. 2008;101(9). doi:10.1103/PhysRevLett.101.096103
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2008 | Journal Article | IST-REx-ID: 1749
Rastelli A, Stoffel M, Malachias Â, et al. Three-dimensional composition profiles of single quantum dots determined by scanning-probe-microscopy-based nanotomography. Nano Letters. 2008;8(5):1404-1409. doi:10.1021/nl080290y
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2007 | Journal Article | IST-REx-ID: 1750
Katsaros G, Stoffel M, Rastelli A, Schmidt O, Kern K, Tersoff J. Three-dimensional isocompositional profiles of buried SiGeSi (001) islands. Applied Physics Letters. 2007;91(1). doi:10.1063/1.2752730
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2006 | Journal Article | IST-REx-ID: 1745
Katsaros G, Rastelli A, Stoffel M, et al. Investigating the lateral motion of SiGe islands by selective chemical etching. Surface Science. 2006;600(12):2608-2613. doi:10.1016/j.susc.2006.04.027
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2006 | Journal Article | IST-REx-ID: 1747
Rastelli A, Stoffel M, Katsaros G, et al. Reading the footprints of strained islands. Microelectronics Journal. 2006;37(12):1471-1476. doi:10.1016/j.mejo.2006.05.029
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| DOI
2006 | Journal Article | IST-REx-ID: 1746
Costantini G, Rastelli A, Manzano C, et al. Interplay between thermodynamics and kinetics in the capping of InAs/GaAs (001) quantum dots. Physical Review Letters. 2006;96(22). doi:10.1103/PhysRevLett.96.226106
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2006 | Journal Article | IST-REx-ID: 1748
Katsaros G, Rastelli A, Stoffel M, et al. Evolution of buried semiconductor nanostructures and origin of stepped surface mounds during capping. Applied Physics Letters. 2006;89(25). doi:10.1063/1.2405876
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2005 | Journal Article | IST-REx-ID: 1742
Katsaros G, Costantini G, Stoffel M, et al. Kinetic origin of island intermixing during the growth of Ge on Si (001). Physical Review B - Condensed Matter and Materials Physics. 2005;72(19). doi:10.1103/PhysRevB.72.195320
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| DOI
2005 | Journal Article | IST-REx-ID: 1740
Costantini G, Rastelli A, Manzano C, et al. Pyramids and domes in the InAs/GaAs (0 0 1) and Ge/Si (0 0 1) systems. Journal of Crystal Growth. 2005;278(1-4):38-45. doi:10.1016/j.jcrysgro.2004.12.047
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2005 | Journal Article | IST-REx-ID: 1743
Zhong Z, Katsaros G, Stoffel M, et al. Periodic pillar structures by Si etching of multilayer GeSi/Si islands. Applied Physics Letters. 2005;87(26):1-3. doi:10.1063/1.2150278
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2005 | Journal Article | IST-REx-ID: 1744
Katsaros G, Darwazeh I, Lane P. Non linear transmission effects in duobinary and dicode optical systems. IEE Proceedings - Optoelectronics. 2005;152(6):344-352. doi:10.1049/ip-opt:20045067
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2005 | Journal Article | IST-REx-ID: 1741
Denker U, Rastelli A, Stoffel M, et al. Lateral motion of SiGe islands driven by surface-mediated alloying. Physical Review Letters. 2005;94(21). doi:10.1103/PhysRevLett.94.216103
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2002 | Conference Paper | IST-REx-ID: 1738
Falaras P, Chryssou K, Stergiopoulos T, et al. Dye-sensitization of titanium dioxide thin films by Ru(II)-bpp-bpy complexes. In: Vol 4801. SPIE; 2002:125-135. doi:10.1117/12.452446
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2002 | Journal Article | IST-REx-ID: 1739
Stergiopoulos T, Arabatzis I, Katsaros G, Falaras P. Binary Polyethylene Oxide/Titania Solid-State Redox Electrolyte for Highly Efficient Nanocrystalline TiO2 Photoelectrochemical Cells. Nano Letters. 2002;2(11):1259-1261. doi:10.1021/nl025798u
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2002 | Journal Article | IST-REx-ID: 1737
Katsaros G, Stergiopoulos T, Arabatzis I, Papadokostaki K, Falaras P. A solvent-free composite polymer/inorganic oxide electrolyte for high efficiency solid-state dye-sensitized solar cells. Journal of Photochemistry and Photobiology A: Chemistry. 2002;149(1-3):191-198. doi:10.1016/S1010-6030(02)00027-8
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2000 | Conference Paper | IST-REx-ID: 1736
Katsaros G, Lane P, Murphy M. Comparison of the impact of FWM on binary, duobinary and dicode modulation in DWDM systems. In: Proceedings of the 2000 IEEE Annual Meeting Conference . Vol 1. IEEE; 2000:27-28. doi:10.1109/LEOS.2000.890656
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50 Publications
2024 | Journal Article | IST-REx-ID: 14793 |
Valentini M, Sagi O, Baghumyan L, et al. Parity-conserving Cooper-pair transport and ideal superconducting diode in planar germanium. Nature Communications. 2024;15. doi:10.1038/s41467-023-44114-0
[Published Version]
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| DOI
| PubMed | Europe PMC
2024 | Journal Article | IST-REx-ID: 15018 |
Shimura Y, Godfrin C, Hikavyy A, et al. Compressively strained epitaxial Ge layers for quantum computing applications. Materials Science in Semiconductor Processing. 2024;174(5). doi:10.1016/j.mssp.2024.108231
[Published Version]
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| DOI
| Download Published Version (ext.)
2024 | Journal Article | IST-REx-ID: 15320 |
Seoane Souto R, Leijnse M, Schrade C, Valentini M, Katsaros G, Danon J. Tuning the Josephson diode response with an ac current. Physical Review Research. 2024;6(2). doi:10.1103/PhysRevResearch.6.L022002
[Published Version]
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2023 | Preprint | IST-REx-ID: 13312 |
Valentini M, Sagi O, Baghumyan L, et al. Radio frequency driven superconducting diode and parity conserving Cooper pair transport in a two-dimensional germanium hole gas. arXiv. doi:10.48550/arXiv.2306.07109
[Preprint]
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2022 | Journal Article | IST-REx-ID: 10920 |
Jirovec D, Mutter PM, Hofmann AC, et al. Dynamics of hole singlet-triplet qubits with large g-factor differences. Physical Review Letters. 2022;128(12). doi:10.1103/PhysRevLett.128.126803
[Published Version]
View
| Files available
| DOI
| WoS
| arXiv
2022 | Journal Article | IST-REx-ID: 12118 |
Valentini M, Borovkov M, Prada E, et al. Majorana-like Coulomb spectroscopy in the absence of zero-bias peaks. Nature. 2022;612(7940):442-447. doi:10.1038/s41586-022-05382-w
[Preprint]
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2021 | Conference Paper | IST-REx-ID: 9464
Gao F, Zhang JY, Wang JH, et al. Ge/Si quantum wires for quantum computing. In: 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021. IEEE; 2021. doi:10.1109/EDTM50988.2021.9420817
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| DOI
| WoS
2021 | Research Data | IST-REx-ID: 9291 |
Katsaros G. Raw transport data for: Enhancement of proximity induced superconductivity in planar germanium. 2021. doi:10.15479/AT:ISTA:9291
[Published Version]
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| DOI
2021 | Journal Article | IST-REx-ID: 8910 |
Valentini M, Peñaranda F, Hofmann AC, et al. Nontopological zero-bias peaks in full-shell nanowires induced by flux-tunable Andreev states. Science. 2021;373(6550). doi:10.1126/science.abf1513
[Submitted Version]
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| Download Submitted Version (ext.)
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| arXiv
2021 | Journal Article | IST-REx-ID: 10559 |
Aggarwal K, Hofmann AC, Jirovec D, et al. Enhancement of proximity-induced superconductivity in a planar Ge hole gas. Physical Review Research. 2021;3(2). doi:10.1103/physrevresearch.3.l022005
[Published Version]
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| arXiv
2021 | Journal Article | IST-REx-ID: 8911 |
Scappucci G, Kloeffel C, Zwanenburg FA, et al. The germanium quantum information route. Nature Reviews Materials. 2021;6:926–943. doi:10.1038/s41578-020-00262-z
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2021 | Journal Article | IST-REx-ID: 8909 |
Jirovec D, Hofmann AC, Ballabio A, et al. A singlet triplet hole spin qubit in planar Ge. Nature Materials. 2021;20(8):1106–1112. doi:10.1038/s41563-021-01022-2
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2021 | Preprint | IST-REx-ID: 10066 |
Severin B, Lennon DT, Camenzind LC, Vigneau F, Fedele F, Jirovec D, Ballabio A, Chrastina D, Isella G, Kruijf M de, Carballido MJ, Svab S, Kuhlmann AV, Braakman FR, Geyer S, Froning FNM, Moon H, Osborne MA, Sejdinovic D, Katsaros G, Zumbühl DM, Briggs GAD, Ares N. Cross-architecture tuning of silicon and SiGe-based quantum devices using machine learning. arXiv, 2107.12975.
[Preprint]
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2020 | Research Data | IST-REx-ID: 8834 |
Katsaros G. Enhancement of proximity induced superconductivity in planar Germanium. 2020. doi:10.15479/AT:ISTA:8834
[Published Version]
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2020 | Journal Article | IST-REx-ID: 7541 |
Gao F, Wang J-H, Watzinger H, et al. Site-controlled uniform Ge/Si hut wires with electrically tunable spin-orbit coupling. Advanced Materials. 2020;32(16). doi:10.1002/adma.201906523
[Published Version]
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2020 | Research Data | IST-REx-ID: 9222 |
Katsaros G. Transport data for: Site‐controlled uniform Ge/Si Hut wires with electrically tunable spin–orbit coupling. 2020. doi:10.15479/AT:ISTA:9222
[Published Version]
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2020 | Journal Article | IST-REx-ID: 8203 |
Katsaros G, Kukucka J, Vukušić L, et al. Zero field splitting of heavy-hole states in quantum dots. Nano Letters. 2020;20(7):5201-5206. doi:10.1021/acs.nanolett.0c01466
[Published Version]
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2020 | Research Data | IST-REx-ID: 7689 |
Katsaros G. Supplementary data for “Zero field splitting of heavy-hole states in quantum dots.” 2020. doi:10.15479/AT:ISTA:7689
[Published Version]
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2020 | Preprint | IST-REx-ID: 8831 |
Aggarwal K, Hofmann AC, Jirovec D, et al. Enhancement of proximity induced superconductivity in planar Germanium. arXiv.
[Submitted Version]
View
| Files available
| arXiv
2019 | Preprint | IST-REx-ID: 10065 |
Hofmann AC, Jirovec D, Borovkov M, et al. Assessing the potential of Ge/SiGe quantum dots as hosts for singlet-triplet qubits. arXiv. doi:10.48550/arXiv.1910.05841
[Preprint]
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2018 | Journal Article | IST-REx-ID: 77 |
Watzinger H, Kukucka J, Vukušić L, et al. A germanium hole spin qubit. Nature Communications. 2018;9(3902). doi:10.1038/s41467-018-06418-4
[Published Version]
View
| Files available
| DOI
| WoS
2018 | Journal Article | IST-REx-ID: 23 |
Vukušić L, Kukucka J, Watzinger H, Milem JM, Schäffler F, Katsaros G. Single-shot readout of hole spins in Ge. Nano Letters. 2018;18(11):7141-7145. doi:10.1021/acs.nanolett.8b03217
[Published Version]
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| DOI
| WoS
| PubMed | Europe PMC
2017 | Journal Article | IST-REx-ID: 840 |
Vukušić L, Kukucka J, Watzinger H, Katsaros G. Fast hole tunneling times in germanium hut wires probed by single-shot reflectometry. Nano Letters. 2017;17(9):5706-5710. doi:10.1021/acs.nanolett.7b02627
[Published Version]
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| Files available
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| WoS
2016 | Journal Article | IST-REx-ID: 1328 |
Watzinger H, Kloeffel C, Vukušić L, et al. Heavy-hole states in germanium hut wires. Nano Letters. 2016;16(11):6879-6885. doi:10.1021/acs.nanolett.6b02715
[Published Version]
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2014 | Journal Article | IST-REx-ID: 1761 |
Mongillo M, Spathis P, Katsaros G, et al. PtSi clustering in silicon probed by transport spectroscopy. Physical Review X. 2014;3(4). doi:10.1103/PhysRevX.3.041025
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2013 | Journal Article | IST-REx-ID: 1760 |
Ares N, Katsaros G, Golovach V, et al. SiGe quantum dots for fast hole spin Rabi oscillations. Applied Physics Letters. 2013;103(26). doi:10.1063/1.4858959
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2013 | Journal Article | IST-REx-ID: 1759 |
Ares N, Golovach V, Katsaros G, et al. Nature of tunable hole g factors in quantum dots. Physical Review Letters. 2013;110(4). doi:10.1103/PhysRevLett.110.046602
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2012 | Journal Article | IST-REx-ID: 1757 |
Zhang J, Katsaros G, Montalenti F, et al. Monolithic growth of ultrathin Ge nanowires on Si(001) . Physical Review Letters. 2012;109(8). doi:10.1103/PhysRevLett.109.085502
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| DOI
| Download (ext.)
2012 | Journal Article | IST-REx-ID: 1758 |
Lee E, Jiang X, Aguado R, Katsaros G, Lieber C, De Franceschi S. Zero-bias anomaly in a nanowire quantum dot coupled to superconductors. Physical Review Letters. 2012;109(18). doi:10.1103/PhysRevLett.109.186802
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| Download (ext.)
2012 | Journal Article | IST-REx-ID: 1756 |
Mongillo M, Spathis P, Katsaros G, Gentile P, De Franceschi S. Multifunctional devices and logic gates with undoped silicon nanowires. Nano Letters. 2012;12(6):3074-3079. doi:10.1021/nl300930m
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| Download (ext.)
2011 | Journal Article | IST-REx-ID: 1754 |
Mongillo M, Spathis P, Katsaros G, Gentile P, Sanquer M, De Franceschi S. Joule-assisted silicidation for short-channel silicon nanowire devices. ACS Nano. 2011;5(9):7117-7123. doi:10.1021/nn202524j
[Preprint]
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| arXiv
2011 | Journal Article | IST-REx-ID: 1755 |
Katsaros G, Golovach V, Spathis P, et al. Observation of spin-selective tunneling in sige nanocrystals. Physical Review Letters. 2011;107(24). doi:10.1103/PhysRevLett.107.246601
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2010 | Journal Article | IST-REx-ID: 1752 |
Katsaros G, Spathis P, Stoffel M, et al. Hybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals on silicon. Nature Nanotechnology. 2010;5(6):458-464. doi:10.1038/nnano.2010.84
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2010 | Journal Article | IST-REx-ID: 1753 |
Songmuang R, Katsaros G, Monroy E, et al. Quantum transport in GaN/AlN double-barrier heterostructure nanowires. Nano Letters. 2010;10(9):3545-3550. doi:10.1021/nl1017578
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2008 | Journal Article | IST-REx-ID: 1751
Katsaros G, Tersoff J, Stoffel M, et al. Positioning of strained islands by interaction with surface nanogrooves. Physical Review Letters. 2008;101(9). doi:10.1103/PhysRevLett.101.096103
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2008 | Journal Article | IST-REx-ID: 1749
Rastelli A, Stoffel M, Malachias Â, et al. Three-dimensional composition profiles of single quantum dots determined by scanning-probe-microscopy-based nanotomography. Nano Letters. 2008;8(5):1404-1409. doi:10.1021/nl080290y
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2007 | Journal Article | IST-REx-ID: 1750
Katsaros G, Stoffel M, Rastelli A, Schmidt O, Kern K, Tersoff J. Three-dimensional isocompositional profiles of buried SiGeSi (001) islands. Applied Physics Letters. 2007;91(1). doi:10.1063/1.2752730
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2006 | Journal Article | IST-REx-ID: 1745
Katsaros G, Rastelli A, Stoffel M, et al. Investigating the lateral motion of SiGe islands by selective chemical etching. Surface Science. 2006;600(12):2608-2613. doi:10.1016/j.susc.2006.04.027
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2006 | Journal Article | IST-REx-ID: 1747
Rastelli A, Stoffel M, Katsaros G, et al. Reading the footprints of strained islands. Microelectronics Journal. 2006;37(12):1471-1476. doi:10.1016/j.mejo.2006.05.029
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2006 | Journal Article | IST-REx-ID: 1746
Costantini G, Rastelli A, Manzano C, et al. Interplay between thermodynamics and kinetics in the capping of InAs/GaAs (001) quantum dots. Physical Review Letters. 2006;96(22). doi:10.1103/PhysRevLett.96.226106
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2006 | Journal Article | IST-REx-ID: 1748
Katsaros G, Rastelli A, Stoffel M, et al. Evolution of buried semiconductor nanostructures and origin of stepped surface mounds during capping. Applied Physics Letters. 2006;89(25). doi:10.1063/1.2405876
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2005 | Journal Article | IST-REx-ID: 1742
Katsaros G, Costantini G, Stoffel M, et al. Kinetic origin of island intermixing during the growth of Ge on Si (001). Physical Review B - Condensed Matter and Materials Physics. 2005;72(19). doi:10.1103/PhysRevB.72.195320
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2005 | Journal Article | IST-REx-ID: 1740
Costantini G, Rastelli A, Manzano C, et al. Pyramids and domes in the InAs/GaAs (0 0 1) and Ge/Si (0 0 1) systems. Journal of Crystal Growth. 2005;278(1-4):38-45. doi:10.1016/j.jcrysgro.2004.12.047
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2005 | Journal Article | IST-REx-ID: 1743
Zhong Z, Katsaros G, Stoffel M, et al. Periodic pillar structures by Si etching of multilayer GeSi/Si islands. Applied Physics Letters. 2005;87(26):1-3. doi:10.1063/1.2150278
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2005 | Journal Article | IST-REx-ID: 1744
Katsaros G, Darwazeh I, Lane P. Non linear transmission effects in duobinary and dicode optical systems. IEE Proceedings - Optoelectronics. 2005;152(6):344-352. doi:10.1049/ip-opt:20045067
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2005 | Journal Article | IST-REx-ID: 1741
Denker U, Rastelli A, Stoffel M, et al. Lateral motion of SiGe islands driven by surface-mediated alloying. Physical Review Letters. 2005;94(21). doi:10.1103/PhysRevLett.94.216103
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2002 | Conference Paper | IST-REx-ID: 1738
Falaras P, Chryssou K, Stergiopoulos T, et al. Dye-sensitization of titanium dioxide thin films by Ru(II)-bpp-bpy complexes. In: Vol 4801. SPIE; 2002:125-135. doi:10.1117/12.452446
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2002 | Journal Article | IST-REx-ID: 1739
Stergiopoulos T, Arabatzis I, Katsaros G, Falaras P. Binary Polyethylene Oxide/Titania Solid-State Redox Electrolyte for Highly Efficient Nanocrystalline TiO2 Photoelectrochemical Cells. Nano Letters. 2002;2(11):1259-1261. doi:10.1021/nl025798u
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2002 | Journal Article | IST-REx-ID: 1737
Katsaros G, Stergiopoulos T, Arabatzis I, Papadokostaki K, Falaras P. A solvent-free composite polymer/inorganic oxide electrolyte for high efficiency solid-state dye-sensitized solar cells. Journal of Photochemistry and Photobiology A: Chemistry. 2002;149(1-3):191-198. doi:10.1016/S1010-6030(02)00027-8
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2000 | Conference Paper | IST-REx-ID: 1736
Katsaros G, Lane P, Murphy M. Comparison of the impact of FWM on binary, duobinary and dicode modulation in DWDM systems. In: Proceedings of the 2000 IEEE Annual Meeting Conference . Vol 1. IEEE; 2000:27-28. doi:10.1109/LEOS.2000.890656
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