30 Publications

Mark all

[30]
2018 | Journal Article | IST-REx-ID: 23   OA
Vukušić L, Kukucka J, Watzinger H, Milem JM, Schäffler F, Katsaros G. Single-shot readout of hole spins in Ge. Nano Letters. 2018;18(11):7141-7145. doi:10.1021/acs.nanolett.8b03217
View | Files available | DOI | PubMed | Europe PMC
 
[29]
2018 | Journal Article | IST-REx-ID: 77   OA
Watzinger H, Kukucka J, Vukusic L, et al. A germanium hole spin qubit. Nature Communications. 2018;9(3902). doi:10.1038/s41467-018-06418-4
View | Files available | DOI
 
[28]
2017 | Journal Article | IST-REx-ID: 840   OA
Vukusic L, Kukucka J, Watzinger H, Katsaros G. Fast hole tunneling times in germanium hut wires probed by single-shot reflectometry. Nano Letters. 2017;17(9):5706-5710. doi:10.1021/acs.nanolett.7b02627
View | Files available | DOI
 
[27]
2016 | Journal Article | IST-REx-ID: 1328   OA
Watzinger H, Kloeffel C, Vukusic L, et al. Heavy-hole states in germanium hut wires. Nano Letters. 2016;16(11):6879-6885. doi:10.1021/acs.nanolett.6b02715
View | Files available | DOI
 
[26]
2014 | Journal Article | IST-REx-ID: 1761   OA
Mongillo M, Spathis P, Katsaros G, et al. PtSi clustering in silicon probed by transport spectroscopy. Physical Review X. 2014;3(4). doi:10.1103/PhysRevX.3.041025
View | DOI | Download (ext.)
 
[25]
2013 | Journal Article | IST-REx-ID: 1760   OA
Ares N, Katsaros G, Golovach V, et al. SiGe quantum dots for fast hole spin Rabi oscillations. Applied Physics Letters. 2013;103(26). doi:10.1063/1.4858959
View | DOI | Download (ext.)
 
[24]
2013 | Journal Article | IST-REx-ID: 1759   OA
Ares N, Golovach V, Katsaros G, et al. Nature of tunable hole g factors in quantum dots. Physical Review Letters. 2013;110(4). doi:10.1103/PhysRevLett.110.046602
View | DOI | Download (ext.)
 
[23]
2012 | Journal Article | IST-REx-ID: 1756   OA
Mongillo M, Spathis P, Katsaros G, Gentile P, De Franceschi S. Multifunctional devices and logic gates with undoped silicon nanowires. Nano Letters. 2012;12(6):3074-3079. doi:10.1021/nl300930m
View | DOI | Download (ext.)
 
[22]
2012 | Journal Article | IST-REx-ID: 1757   OA
Zhang J, Katsaros G, Montalenti F, et al. Monolithic growth of ultrathin Ge nanowires on Si(001) . Physical Review Letters. 2012;109(8). doi:10.1103/PhysRevLett.109.085502
View | DOI | Download (ext.)
 
[21]
2012 | Journal Article | IST-REx-ID: 1758   OA
Lee E, Jiang X, Aguado R, Katsaros G, Lieber C, De Franceschi S. Zero-bias anomaly in a nanowire quantum dot coupled to superconductors. Physical Review Letters. 2012;109(18). doi:10.1103/PhysRevLett.109.186802
View | DOI | Download (ext.)
 
[20]
2011 | Journal Article | IST-REx-ID: 1755   OA
Katsaros G, Golovach V, Spathis P, et al. Observation of spin-selective tunneling in sige nanocrystals. Physical Review Letters. 2011;107(24). doi:10.1103/PhysRevLett.107.246601
View | DOI | Download (ext.)
 
[19]
2011 | Journal Article | IST-REx-ID: 1754   OA
Mongillo M, Spathis P, Katsaros G, Gentile P, Sanquer M, De Franceschi S. Joule-assisted silicidation for short-channel silicon nanowire devices. ACS Nano. 2011;5(9):7117-7123. doi:10.1021/nn202524j
View | DOI | Download (ext.) | arXiv
 
[18]
2010 | Journal Article | IST-REx-ID: 1752   OA
Katsaros G, Spathis P, Stoffel M, et al. Hybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals on silicon. Nature Nanotechnology. 2010;5(6):458-464. doi:10.1038/nnano.2010.84
View | DOI | Download (ext.)
 
[17]
2010 | Journal Article | IST-REx-ID: 1753   OA
Songmuang R, Katsaros G, Monroy E, et al. Quantum transport in GaN/AlN double-barrier heterostructure nanowires. Nano Letters. 2010;10(9):3545-3550. doi:10.1021/nl1017578
View | DOI | Download (ext.)
 
[16]
2008 | Journal Article | IST-REx-ID: 1749
Rastelli A, Stoffel M, Malachias Â, et al. Three-dimensional composition profiles of single quantum dots determined by scanning-probe-microscopy-based nanotomography. Nano Letters. 2008;8(5):1404-1409. doi:10.1021/nl080290y
View | DOI
 
[15]
2008 | Journal Article | IST-REx-ID: 1751
Katsaros G, Tersoff J, Stoffel M, et al. Positioning of strained islands by interaction with surface nanogrooves. Physical Review Letters. 2008;101(9). doi:10.1103/PhysRevLett.101.096103
View | DOI
 
[14]
2007 | Journal Article | IST-REx-ID: 1750
Katsaros G, Stoffel M, Rastelli A, Schmidt O, Kern K, Tersoff J. Three-dimensional isocompositional profiles of buried SiGeSi (001) islands. Applied Physics Letters. 2007;91(1). doi:10.1063/1.2752730
View | DOI
 
[13]
2006 | Journal Article | IST-REx-ID: 1748
Katsaros G, Rastelli A, Stoffel M, et al. Evolution of buried semiconductor nanostructures and origin of stepped surface mounds during capping. Applied Physics Letters. 2006;89(25). doi:10.1063/1.2405876
View | DOI
 
[12]
2006 | Journal Article | IST-REx-ID: 1745
Katsaros G, Rastelli A, Stoffel M, et al. Investigating the lateral motion of SiGe islands by selective chemical etching. Surface Science. 2006;600(12):2608-2613. doi:10.1016/j.susc.2006.04.027
View | DOI
 
[11]
2006 | Journal Article | IST-REx-ID: 1746
Costantini G, Rastelli A, Manzano C, et al. Interplay between thermodynamics and kinetics in the capping of InAs/GaAs (001) quantum dots. Physical Review Letters. 2006;96(22). doi:10.1103/PhysRevLett.96.226106
View | DOI
 
[10]
2006 | Journal Article | IST-REx-ID: 1747
Rastelli A, Stoffel M, Katsaros G, et al. Reading the footprints of strained islands. Microelectronics Journal. 2006;37(12):1471-1476. doi:10.1016/j.mejo.2006.05.029
View | DOI
 
[9]
2005 | Journal Article | IST-REx-ID: 1743
Zhong Z, Katsaros G, Stoffel M, et al. Periodic pillar structures by Si etching of multilayer GeSi/Si islands. Applied Physics Letters. 2005;87(26):1-3. doi:10.1063/1.2150278
View | DOI
 
[8]
2005 | Journal Article | IST-REx-ID: 1744
Katsaros G, Darwazeh I, Lane P. Non linear transmission effects in duobinary and dicode optical systems. IEE Proceedings - Optoelectronics. 2005;152(6):344-352. doi:10.1049/ip-opt:20045067
View | DOI
 
[7]
2005 | Journal Article | IST-REx-ID: 1740
Costantini G, Rastelli A, Manzano C, et al. Pyramids and domes in the InAs/GaAs (0 0 1) and Ge/Si (0 0 1) systems. Journal of Crystal Growth. 2005;278(1-4):38-45. doi:10.1016/j.jcrysgro.2004.12.047
View | DOI
 
[6]
2005 | Journal Article | IST-REx-ID: 1741
Denker U, Rastelli A, Stoffel M, et al. Lateral motion of SiGe islands driven by surface-mediated alloying. Physical Review Letters. 2005;94(21). doi:10.1103/PhysRevLett.94.216103
View | DOI
 
[5]
2005 | Journal Article | IST-REx-ID: 1742
Katsaros G, Costantini G, Stoffel M, et al. Kinetic origin of island intermixing during the growth of Ge on Si (001). Physical Review B - Condensed Matter and Materials Physics. 2005;72(19). doi:10.1103/PhysRevB.72.195320
View | DOI
 
[4]
2002 | Journal Article | IST-REx-ID: 1737
Katsaros G, Stergiopoulos T, Arabatzis I, Papadokostaki K, Falaras P. A solvent-free composite polymer/inorganic oxide electrolyte for high efficiency solid-state dye-sensitized solar cells. Journal of Photochemistry and Photobiology A: Chemistry. 2002;149(1-3):191-198. doi:10.1016/S1010-6030(02)00027-8
View | DOI
 
[3]
2002 | Conference Paper | IST-REx-ID: 1738
Falaras P, Chryssou K, Stergiopoulos T, et al. Dye-sensitization of titanium dioxide thin films by Ru(II)-bpp-bpy complexes. In: Vol 4801. SPIE; 2002:125-135. doi:10.1117/12.452446
View | DOI
 
[2]
2002 | Journal Article | IST-REx-ID: 1739
Stergiopoulos T, Arabatzis I, Katsaros G, Falaras P. Binary Polyethylene Oxide/Titania Solid-State Redox Electrolyte for Highly Efficient Nanocrystalline TiO2 Photoelectrochemical Cells. Nano Letters. 2002;2(11):1259-1261. doi:10.1021/nl025798u
View | DOI
 
[1]
2000 | Conference Paper | IST-REx-ID: 1736
Katsaros G, Lane P, Murphy M. Comparison of the impact of FWM on binary, duobinary and dicode modulation in DWDM systems. In: Vol 1. IEEE; 2000:27-28. doi:10.1109/LEOS.2000.890656
View | DOI
 

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30 Publications

Mark all

[30]
2018 | Journal Article | IST-REx-ID: 23   OA
Vukušić L, Kukucka J, Watzinger H, Milem JM, Schäffler F, Katsaros G. Single-shot readout of hole spins in Ge. Nano Letters. 2018;18(11):7141-7145. doi:10.1021/acs.nanolett.8b03217
View | Files available | DOI | PubMed | Europe PMC
 
[29]
2018 | Journal Article | IST-REx-ID: 77   OA
Watzinger H, Kukucka J, Vukusic L, et al. A germanium hole spin qubit. Nature Communications. 2018;9(3902). doi:10.1038/s41467-018-06418-4
View | Files available | DOI
 
[28]
2017 | Journal Article | IST-REx-ID: 840   OA
Vukusic L, Kukucka J, Watzinger H, Katsaros G. Fast hole tunneling times in germanium hut wires probed by single-shot reflectometry. Nano Letters. 2017;17(9):5706-5710. doi:10.1021/acs.nanolett.7b02627
View | Files available | DOI
 
[27]
2016 | Journal Article | IST-REx-ID: 1328   OA
Watzinger H, Kloeffel C, Vukusic L, et al. Heavy-hole states in germanium hut wires. Nano Letters. 2016;16(11):6879-6885. doi:10.1021/acs.nanolett.6b02715
View | Files available | DOI
 
[26]
2014 | Journal Article | IST-REx-ID: 1761   OA
Mongillo M, Spathis P, Katsaros G, et al. PtSi clustering in silicon probed by transport spectroscopy. Physical Review X. 2014;3(4). doi:10.1103/PhysRevX.3.041025
View | DOI | Download (ext.)
 
[25]
2013 | Journal Article | IST-REx-ID: 1760   OA
Ares N, Katsaros G, Golovach V, et al. SiGe quantum dots for fast hole spin Rabi oscillations. Applied Physics Letters. 2013;103(26). doi:10.1063/1.4858959
View | DOI | Download (ext.)
 
[24]
2013 | Journal Article | IST-REx-ID: 1759   OA
Ares N, Golovach V, Katsaros G, et al. Nature of tunable hole g factors in quantum dots. Physical Review Letters. 2013;110(4). doi:10.1103/PhysRevLett.110.046602
View | DOI | Download (ext.)
 
[23]
2012 | Journal Article | IST-REx-ID: 1756   OA
Mongillo M, Spathis P, Katsaros G, Gentile P, De Franceschi S. Multifunctional devices and logic gates with undoped silicon nanowires. Nano Letters. 2012;12(6):3074-3079. doi:10.1021/nl300930m
View | DOI | Download (ext.)
 
[22]
2012 | Journal Article | IST-REx-ID: 1757   OA
Zhang J, Katsaros G, Montalenti F, et al. Monolithic growth of ultrathin Ge nanowires on Si(001) . Physical Review Letters. 2012;109(8). doi:10.1103/PhysRevLett.109.085502
View | DOI | Download (ext.)
 
[21]
2012 | Journal Article | IST-REx-ID: 1758   OA
Lee E, Jiang X, Aguado R, Katsaros G, Lieber C, De Franceschi S. Zero-bias anomaly in a nanowire quantum dot coupled to superconductors. Physical Review Letters. 2012;109(18). doi:10.1103/PhysRevLett.109.186802
View | DOI | Download (ext.)
 
[20]
2011 | Journal Article | IST-REx-ID: 1755   OA
Katsaros G, Golovach V, Spathis P, et al. Observation of spin-selective tunneling in sige nanocrystals. Physical Review Letters. 2011;107(24). doi:10.1103/PhysRevLett.107.246601
View | DOI | Download (ext.)
 
[19]
2011 | Journal Article | IST-REx-ID: 1754   OA
Mongillo M, Spathis P, Katsaros G, Gentile P, Sanquer M, De Franceschi S. Joule-assisted silicidation for short-channel silicon nanowire devices. ACS Nano. 2011;5(9):7117-7123. doi:10.1021/nn202524j
View | DOI | Download (ext.) | arXiv
 
[18]
2010 | Journal Article | IST-REx-ID: 1752   OA
Katsaros G, Spathis P, Stoffel M, et al. Hybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals on silicon. Nature Nanotechnology. 2010;5(6):458-464. doi:10.1038/nnano.2010.84
View | DOI | Download (ext.)
 
[17]
2010 | Journal Article | IST-REx-ID: 1753   OA
Songmuang R, Katsaros G, Monroy E, et al. Quantum transport in GaN/AlN double-barrier heterostructure nanowires. Nano Letters. 2010;10(9):3545-3550. doi:10.1021/nl1017578
View | DOI | Download (ext.)
 
[16]
2008 | Journal Article | IST-REx-ID: 1749
Rastelli A, Stoffel M, Malachias Â, et al. Three-dimensional composition profiles of single quantum dots determined by scanning-probe-microscopy-based nanotomography. Nano Letters. 2008;8(5):1404-1409. doi:10.1021/nl080290y
View | DOI
 
[15]
2008 | Journal Article | IST-REx-ID: 1751
Katsaros G, Tersoff J, Stoffel M, et al. Positioning of strained islands by interaction with surface nanogrooves. Physical Review Letters. 2008;101(9). doi:10.1103/PhysRevLett.101.096103
View | DOI
 
[14]
2007 | Journal Article | IST-REx-ID: 1750
Katsaros G, Stoffel M, Rastelli A, Schmidt O, Kern K, Tersoff J. Three-dimensional isocompositional profiles of buried SiGeSi (001) islands. Applied Physics Letters. 2007;91(1). doi:10.1063/1.2752730
View | DOI
 
[13]
2006 | Journal Article | IST-REx-ID: 1748
Katsaros G, Rastelli A, Stoffel M, et al. Evolution of buried semiconductor nanostructures and origin of stepped surface mounds during capping. Applied Physics Letters. 2006;89(25). doi:10.1063/1.2405876
View | DOI
 
[12]
2006 | Journal Article | IST-REx-ID: 1745
Katsaros G, Rastelli A, Stoffel M, et al. Investigating the lateral motion of SiGe islands by selective chemical etching. Surface Science. 2006;600(12):2608-2613. doi:10.1016/j.susc.2006.04.027
View | DOI
 
[11]
2006 | Journal Article | IST-REx-ID: 1746
Costantini G, Rastelli A, Manzano C, et al. Interplay between thermodynamics and kinetics in the capping of InAs/GaAs (001) quantum dots. Physical Review Letters. 2006;96(22). doi:10.1103/PhysRevLett.96.226106
View | DOI
 
[10]
2006 | Journal Article | IST-REx-ID: 1747
Rastelli A, Stoffel M, Katsaros G, et al. Reading the footprints of strained islands. Microelectronics Journal. 2006;37(12):1471-1476. doi:10.1016/j.mejo.2006.05.029
View | DOI
 
[9]
2005 | Journal Article | IST-REx-ID: 1743
Zhong Z, Katsaros G, Stoffel M, et al. Periodic pillar structures by Si etching of multilayer GeSi/Si islands. Applied Physics Letters. 2005;87(26):1-3. doi:10.1063/1.2150278
View | DOI
 
[8]
2005 | Journal Article | IST-REx-ID: 1744
Katsaros G, Darwazeh I, Lane P. Non linear transmission effects in duobinary and dicode optical systems. IEE Proceedings - Optoelectronics. 2005;152(6):344-352. doi:10.1049/ip-opt:20045067
View | DOI
 
[7]
2005 | Journal Article | IST-REx-ID: 1740
Costantini G, Rastelli A, Manzano C, et al. Pyramids and domes in the InAs/GaAs (0 0 1) and Ge/Si (0 0 1) systems. Journal of Crystal Growth. 2005;278(1-4):38-45. doi:10.1016/j.jcrysgro.2004.12.047
View | DOI
 
[6]
2005 | Journal Article | IST-REx-ID: 1741
Denker U, Rastelli A, Stoffel M, et al. Lateral motion of SiGe islands driven by surface-mediated alloying. Physical Review Letters. 2005;94(21). doi:10.1103/PhysRevLett.94.216103
View | DOI
 
[5]
2005 | Journal Article | IST-REx-ID: 1742
Katsaros G, Costantini G, Stoffel M, et al. Kinetic origin of island intermixing during the growth of Ge on Si (001). Physical Review B - Condensed Matter and Materials Physics. 2005;72(19). doi:10.1103/PhysRevB.72.195320
View | DOI
 
[4]
2002 | Journal Article | IST-REx-ID: 1737
Katsaros G, Stergiopoulos T, Arabatzis I, Papadokostaki K, Falaras P. A solvent-free composite polymer/inorganic oxide electrolyte for high efficiency solid-state dye-sensitized solar cells. Journal of Photochemistry and Photobiology A: Chemistry. 2002;149(1-3):191-198. doi:10.1016/S1010-6030(02)00027-8
View | DOI
 
[3]
2002 | Conference Paper | IST-REx-ID: 1738
Falaras P, Chryssou K, Stergiopoulos T, et al. Dye-sensitization of titanium dioxide thin films by Ru(II)-bpp-bpy complexes. In: Vol 4801. SPIE; 2002:125-135. doi:10.1117/12.452446
View | DOI
 
[2]
2002 | Journal Article | IST-REx-ID: 1739
Stergiopoulos T, Arabatzis I, Katsaros G, Falaras P. Binary Polyethylene Oxide/Titania Solid-State Redox Electrolyte for Highly Efficient Nanocrystalline TiO2 Photoelectrochemical Cells. Nano Letters. 2002;2(11):1259-1261. doi:10.1021/nl025798u
View | DOI
 
[1]
2000 | Conference Paper | IST-REx-ID: 1736
Katsaros G, Lane P, Murphy M. Comparison of the impact of FWM on binary, duobinary and dicode modulation in DWDM systems. In: Vol 1. IEEE; 2000:27-28. doi:10.1109/LEOS.2000.890656
View | DOI
 

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Citation Style: AMA

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