--- _id: '1747' abstract: - lang: eng text: 'We report on recent advances in the understanding of surface processes occurring during growth and post-growth annealing of strained islands which may find application as self-assembled quantum dots. We investigate the model system SiGe/Si(0 0 1) by a new approach based on "reading the footprints" which islands leave on the substrate during their growth and evolution. Such footprints consist of trenches carved in the Si substrate. We distinguish between surface footprints and footprints buried below the islands. The former allow us to discriminate islands which are in the process of growing from those which are shrinking. Islands with steep morphologies grow at the expense of smaller and shallower islands, consistent with the kinetics of anomalous coarsening. While shrinking, islands change their shape according to thermodynamic predictions. Buried footprints are investigated by removing the SiGe epilayer by means of selective wet chemical etching. Their reading shows that: (i) during post-growth annealing islands move laterally because of surface-mediated Si-Ge intermixing; (ii) a tree-ring structure of trenches is created by dislocated islands during their "cyclic" growth. This allows us to distinguish coherent from dislocated islands and to establish whether the latter are the result of island coalescence.' acknowledgement: This work was supported by the BMBF (03N8711) author: - first_name: Armando full_name: Rastelli, Armando last_name: Rastelli - first_name: Mathieu full_name: Stoffel, Mathieu last_name: Stoffel - first_name: Georgios full_name: Georgios Katsaros id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros - first_name: Jerry full_name: Tersoff, Jerry last_name: Tersoff - first_name: Ulrich full_name: Denker, Ulrich last_name: Denker - first_name: Tsvetelina full_name: Merdzhanova, Tsvetelina last_name: Merdzhanova - first_name: Gouranga full_name: Kar, Gouranga S last_name: Kar - first_name: Giovanni full_name: Costantini, Giovanni last_name: Costantini - first_name: Klaus full_name: Kern, Klaus last_name: Kern - first_name: Hans full_name: Von Känel, Hans last_name: Von Känel - first_name: Oliver full_name: Schmidt, Oliver G last_name: Schmidt citation: ama: Rastelli A, Stoffel M, Katsaros G, et al. Reading the footprints of strained islands. Microelectronics Journal. 2006;37(12):1471-1476. doi:10.1016/j.mejo.2006.05.029 apa: Rastelli, A., Stoffel, M., Katsaros, G., Tersoff, J., Denker, U., Merdzhanova, T., … Schmidt, O. (2006). Reading the footprints of strained islands. Microelectronics Journal. Elsevier. https://doi.org/10.1016/j.mejo.2006.05.029 chicago: Rastelli, Armando, Mathieu Stoffel, Georgios Katsaros, Jerry Tersoff, Ulrich Denker, Tsvetelina Merdzhanova, Gouranga Kar, et al. “Reading the Footprints of Strained Islands.” Microelectronics Journal. Elsevier, 2006. https://doi.org/10.1016/j.mejo.2006.05.029. ieee: A. Rastelli et al., “Reading the footprints of strained islands,” Microelectronics Journal, vol. 37, no. 12. Elsevier, pp. 1471–1476, 2006. ista: Rastelli A, Stoffel M, Katsaros G, Tersoff J, Denker U, Merdzhanova T, Kar G, Costantini G, Kern K, Von Känel H, Schmidt O. 2006. Reading the footprints of strained islands. Microelectronics Journal. 37(12), 1471–1476. mla: Rastelli, Armando, et al. “Reading the Footprints of Strained Islands.” Microelectronics Journal, vol. 37, no. 12, Elsevier, 2006, pp. 1471–76, doi:10.1016/j.mejo.2006.05.029. short: A. Rastelli, M. Stoffel, G. Katsaros, J. Tersoff, U. Denker, T. Merdzhanova, G. Kar, G. Costantini, K. Kern, H. Von Känel, O. Schmidt, Microelectronics Journal 37 (2006) 1471–1476. date_created: 2018-12-11T11:53:47Z date_published: 2006-12-01T00:00:00Z date_updated: 2021-01-12T06:52:57Z day: '01' doi: 10.1016/j.mejo.2006.05.029 extern: 1 intvolume: ' 37' issue: '12' month: '12' page: 1471 - 1476 publication: Microelectronics Journal publication_status: published publisher: Elsevier publist_id: '5377' quality_controlled: 0 status: public title: Reading the footprints of strained islands type: journal_article volume: 37 year: '2006' ... --- _id: '1746' abstract: - lang: eng text: 'A microscopic picture for the GaAs overgrowth of self-organized InAs/GaAs(001) quantum dots is developed. Scanning tunneling microscopy measurements reveal two capping regimes: the first being characterized by a dot shrinking and a backward pyramid-to-dome shape transition. This regime is governed by fast dynamics resulting in island morphologies close to thermodynamic equilibrium. The second regime is marked by a true overgrowth and is controlled by kinetically limited surface diffusion processes. A simple model is developed to describe the observed structural changes which are rationalized in terms of energetic minimization driven by lattice mismatch and alloying.' author: - first_name: Giovanni full_name: Costantini, Giovanni last_name: Costantini - first_name: Armando full_name: Rastelli, Armando last_name: Rastelli - first_name: Carlos full_name: Manzano, Carlos last_name: Manzano - first_name: P full_name: Acosta-Diaz, P last_name: Acosta Diaz - first_name: Rudeeson full_name: Songmuang, Rudeeson last_name: Songmuang - first_name: Georgios full_name: Georgios Katsaros id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros - first_name: Oliver full_name: Schmidt, Oliver G last_name: Schmidt - first_name: Klaus full_name: Kern, Klaus last_name: Kern citation: ama: Costantini G, Rastelli A, Manzano C, et al. Interplay between thermodynamics and kinetics in the capping of InAs/GaAs (001) quantum dots. Physical Review Letters. 2006;96(22). doi:10.1103/PhysRevLett.96.226106 apa: Costantini, G., Rastelli, A., Manzano, C., Acosta Diaz, P., Songmuang, R., Katsaros, G., … Kern, K. (2006). Interplay between thermodynamics and kinetics in the capping of InAs/GaAs (001) quantum dots. Physical Review Letters. American Physical Society. https://doi.org/10.1103/PhysRevLett.96.226106 chicago: Costantini, Giovanni, Armando Rastelli, Carlos Manzano, P Acosta Diaz, Rudeeson Songmuang, Georgios Katsaros, Oliver Schmidt, and Klaus Kern. “Interplay between Thermodynamics and Kinetics in the Capping of InAs/GaAs (001) Quantum Dots.” Physical Review Letters. American Physical Society, 2006. https://doi.org/10.1103/PhysRevLett.96.226106. ieee: G. Costantini et al., “Interplay between thermodynamics and kinetics in the capping of InAs/GaAs (001) quantum dots,” Physical Review Letters, vol. 96, no. 22. American Physical Society, 2006. ista: Costantini G, Rastelli A, Manzano C, Acosta Diaz P, Songmuang R, Katsaros G, Schmidt O, Kern K. 2006. Interplay between thermodynamics and kinetics in the capping of InAs/GaAs (001) quantum dots. Physical Review Letters. 96(22). mla: Costantini, Giovanni, et al. “Interplay between Thermodynamics and Kinetics in the Capping of InAs/GaAs (001) Quantum Dots.” Physical Review Letters, vol. 96, no. 22, American Physical Society, 2006, doi:10.1103/PhysRevLett.96.226106. short: G. Costantini, A. Rastelli, C. Manzano, P. Acosta Diaz, R. Songmuang, G. Katsaros, O. Schmidt, K. Kern, Physical Review Letters 96 (2006). date_created: 2018-12-11T11:53:47Z date_published: 2006-01-01T00:00:00Z date_updated: 2021-01-12T06:52:56Z day: '01' doi: 10.1103/PhysRevLett.96.226106 extern: 1 intvolume: ' 96' issue: '22' month: '01' publication: Physical Review Letters publication_status: published publisher: American Physical Society publist_id: '5378' quality_controlled: 0 status: public title: Interplay between thermodynamics and kinetics in the capping of InAs/GaAs (001) quantum dots type: journal_article volume: 96 year: '2006' ... --- _id: '1748' abstract: - lang: eng text: The authors apply selective wet chemical etching and atomic force microscopy to reveal the three-dimensional shape of SiGeSi (001) islands after capping with Si. Although the "self-assembled quantum dots" remain practically unaffected by capping in the temperature range of 300-450 °C, significant morphological changes take place on the Si surface. At 450 °C, the morphology of the capping layer (Si matrix) evolves toward an intriguing semifacetted structure, which we call a "ziggurat," giving the misleading impression of a stepped SiGe island shape. author: - first_name: Georgios full_name: Georgios Katsaros id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros - first_name: Armando full_name: Rastelli, Armando last_name: Rastelli - first_name: Mathieu full_name: Stoffel, Mathieu last_name: Stoffel - first_name: Giovanni full_name: Costantini, Giovanni last_name: Costantini - first_name: Oliver full_name: Schmidt, Oliver G last_name: Schmidt - first_name: Klaus full_name: Kern, Klaus last_name: Kern - first_name: Jerry full_name: Tersoff, Jerry last_name: Tersoff - first_name: Elisabeth full_name: Müller, Elisabeth last_name: Müller - first_name: Hans full_name: Von Känel, Hans last_name: Von Känel citation: ama: Katsaros G, Rastelli A, Stoffel M, et al. Evolution of buried semiconductor nanostructures and origin of stepped surface mounds during capping. Applied Physics Letters. 2006;89(25). doi:10.1063/1.2405876 apa: Katsaros, G., Rastelli, A., Stoffel, M., Costantini, G., Schmidt, O., Kern, K., … Von Känel, H. (2006). Evolution of buried semiconductor nanostructures and origin of stepped surface mounds during capping. Applied Physics Letters. American Institute of Physics. https://doi.org/10.1063/1.2405876 chicago: Katsaros, Georgios, Armando Rastelli, Mathieu Stoffel, Giovanni Costantini, Oliver Schmidt, Klaus Kern, Jerry Tersoff, Elisabeth Müller, and Hans Von Känel. “Evolution of Buried Semiconductor Nanostructures and Origin of Stepped Surface Mounds during Capping.” Applied Physics Letters. American Institute of Physics, 2006. https://doi.org/10.1063/1.2405876. ieee: G. Katsaros et al., “Evolution of buried semiconductor nanostructures and origin of stepped surface mounds during capping,” Applied Physics Letters, vol. 89, no. 25. American Institute of Physics, 2006. ista: Katsaros G, Rastelli A, Stoffel M, Costantini G, Schmidt O, Kern K, Tersoff J, Müller E, Von Känel H. 2006. Evolution of buried semiconductor nanostructures and origin of stepped surface mounds during capping. Applied Physics Letters. 89(25). mla: Katsaros, Georgios, et al. “Evolution of Buried Semiconductor Nanostructures and Origin of Stepped Surface Mounds during Capping.” Applied Physics Letters, vol. 89, no. 25, American Institute of Physics, 2006, doi:10.1063/1.2405876. short: G. Katsaros, A. Rastelli, M. Stoffel, G. Costantini, O. Schmidt, K. Kern, J. Tersoff, E. Müller, H. Von Känel, Applied Physics Letters 89 (2006). date_created: 2018-12-11T11:53:48Z date_published: 2006-01-01T00:00:00Z date_updated: 2021-01-12T06:52:57Z day: '01' doi: 10.1063/1.2405876 extern: 1 intvolume: ' 89' issue: '25' month: '01' publication: Applied Physics Letters publication_status: published publisher: American Institute of Physics publist_id: '5376' quality_controlled: 0 status: public title: Evolution of buried semiconductor nanostructures and origin of stepped surface mounds during capping type: journal_article volume: 89 year: '2006' ... --- _id: '1796' abstract: - lang: eng text: Drugs that block the entry of human immunodeficiency virus type 1 (HIV-1) into host cells abrogate the establishment of a productive infection and should ideally diminish the chances of HIV-1 developing resistance. This review will give an overview of the mechanism by which the envelope glycoprotein mediates HIV-1 entry and will summarize current drug developments. author: - first_name: Sandra full_name: Sandra Siegert id: 36ACD32E-F248-11E8-B48F-1D18A9856A87 last_name: Siegert orcid: 0000-0001-8635-0877 - first_name: Peter full_name: Schnierle, Peter last_name: Schnierle - first_name: Barbara full_name: Schnierle, Barbara S last_name: Schnierle citation: ama: 'Siegert S, Schnierle P, Schnierle B. Novel anti-viral therapy: Drugs that block HIV entry at different target sites. Mini-Reviews in Medicinal Chemistry. 2006;6(5):557-562. doi:10.2174/138955706776876267' apa: 'Siegert, S., Schnierle, P., & Schnierle, B. (2006). Novel anti-viral therapy: Drugs that block HIV entry at different target sites. Mini-Reviews in Medicinal Chemistry. Bentham Science Publishers. https://doi.org/10.2174/138955706776876267' chicago: 'Siegert, Sandra, Peter Schnierle, and Barbara Schnierle. “Novel Anti-Viral Therapy: Drugs That Block HIV Entry at Different Target Sites.” Mini-Reviews in Medicinal Chemistry. Bentham Science Publishers, 2006. https://doi.org/10.2174/138955706776876267.' ieee: 'S. Siegert, P. Schnierle, and B. Schnierle, “Novel anti-viral therapy: Drugs that block HIV entry at different target sites,” Mini-Reviews in Medicinal Chemistry, vol. 6, no. 5. Bentham Science Publishers, pp. 557–562, 2006.' ista: 'Siegert S, Schnierle P, Schnierle B. 2006. Novel anti-viral therapy: Drugs that block HIV entry at different target sites. Mini-Reviews in Medicinal Chemistry. 6(5), 557–562.' mla: 'Siegert, Sandra, et al. “Novel Anti-Viral Therapy: Drugs That Block HIV Entry at Different Target Sites.” Mini-Reviews in Medicinal Chemistry, vol. 6, no. 5, Bentham Science Publishers, 2006, pp. 557–62, doi:10.2174/138955706776876267.' short: S. Siegert, P. Schnierle, B. Schnierle, Mini-Reviews in Medicinal Chemistry 6 (2006) 557–562. date_created: 2018-12-11T11:54:03Z date_published: 2006-05-01T00:00:00Z date_updated: 2021-01-12T06:53:15Z day: '01' doi: 10.2174/138955706776876267 extern: 1 intvolume: ' 6' issue: '5' month: '05' page: 557 - 562 publication: Mini-Reviews in Medicinal Chemistry publication_status: published publisher: Bentham Science Publishers publist_id: '5314' quality_controlled: 0 status: public title: 'Novel anti-viral therapy: Drugs that block HIV entry at different target sites' type: journal_article volume: 6 year: '2006' ... --- _id: '1961' abstract: - lang: eng text: | Respiratory complex I plays a central role in cellular energy production in bacteria and mitochondria. Its dysfunction is implicated in many human neurodegenerative diseases, as well as in aging. The crystal structure of the hydrophilic domain (peripheral arm) of complex I from Thermus thermophilus has been solved at 3.3 angstrom resolution. This subcomplex consists of eight subunits and contains all the redox centers of the enzyme, including nine iron-sulfur clusters. The primary electron acceptor, flavin-mononucleotide, is within electron transfer distance of cluster N3, leading to the main redox pathway, and of the distal cluster Nia, a possible antioxidant. The structure reveals new aspects of the mechanism and evolution of the enzyme. The terminal cluster N2 is coordinated, uniquely, by two consecutive cysteines. The novel subunit Nqo15 has a similar fold to the mitochondrial iron chaperone frataxin, and it may be involved in iron-sulfur cluster regeneration in the complex. acknowledgement: This work was funded by the Medical Research Council. author: - first_name: Leonid A full_name: Leonid Sazanov id: 338D39FE-F248-11E8-B48F-1D18A9856A87 last_name: Sazanov orcid: 0000-0002-0977-7989 - first_name: Philip full_name: 'Hinchliffe, Philip ' last_name: Hinchliffe citation: ama: Sazanov LA, Hinchliffe P. Structure of the hydrophilic domain of respiratory complex I from Thermus thermophilus. Science. 2006;311(5766):1430-1436. doi:10.1126/science.1123809 apa: Sazanov, L. A., & Hinchliffe, P. (2006). Structure of the hydrophilic domain of respiratory complex I from Thermus thermophilus. Science. American Association for the Advancement of Science. https://doi.org/10.1126/science.1123809 chicago: Sazanov, Leonid A, and Philip Hinchliffe. “Structure of the Hydrophilic Domain of Respiratory Complex I from Thermus Thermophilus.” Science. American Association for the Advancement of Science, 2006. https://doi.org/10.1126/science.1123809. ieee: L. A. Sazanov and P. Hinchliffe, “Structure of the hydrophilic domain of respiratory complex I from Thermus thermophilus,” Science, vol. 311, no. 5766. American Association for the Advancement of Science, pp. 1430–1436, 2006. ista: Sazanov LA, Hinchliffe P. 2006. Structure of the hydrophilic domain of respiratory complex I from Thermus thermophilus. Science. 311(5766), 1430–1436. mla: Sazanov, Leonid A., and Philip Hinchliffe. “Structure of the Hydrophilic Domain of Respiratory Complex I from Thermus Thermophilus.” Science, vol. 311, no. 5766, American Association for the Advancement of Science, 2006, pp. 1430–36, doi:10.1126/science.1123809. short: L.A. Sazanov, P. Hinchliffe, Science 311 (2006) 1430–1436. date_created: 2018-12-11T11:54:56Z date_published: 2006-03-10T00:00:00Z date_updated: 2021-01-12T06:54:22Z day: '10' doi: 10.1126/science.1123809 extern: 1 intvolume: ' 311' issue: '5766' month: '03' page: 1430 - 1436 publication: Science publication_status: published publisher: American Association for the Advancement of Science publist_id: '5121' quality_controlled: 0 status: public title: Structure of the hydrophilic domain of respiratory complex I from Thermus thermophilus type: journal_article volume: 311 year: '2006' ...