---
_id: '1747'
abstract:
- lang: eng
text: 'We report on recent advances in the understanding of surface processes occurring
during growth and post-growth annealing of strained islands which may find application
as self-assembled quantum dots. We investigate the model system SiGe/Si(0 0 1)
by a new approach based on "reading the footprints" which islands leave
on the substrate during their growth and evolution. Such footprints consist of
trenches carved in the Si substrate. We distinguish between surface footprints
and footprints buried below the islands. The former allow us to discriminate islands
which are in the process of growing from those which are shrinking. Islands with
steep morphologies grow at the expense of smaller and shallower islands, consistent
with the kinetics of anomalous coarsening. While shrinking, islands change their
shape according to thermodynamic predictions. Buried footprints are investigated
by removing the SiGe epilayer by means of selective wet chemical etching. Their
reading shows that: (i) during post-growth annealing islands move laterally because
of surface-mediated Si-Ge intermixing; (ii) a tree-ring structure of trenches
is created by dislocated islands during their "cyclic" growth. This
allows us to distinguish coherent from dislocated islands and to establish whether
the latter are the result of island coalescence.'
acknowledgement: This work was supported by the BMBF (03N8711)
author:
- first_name: Armando
full_name: Rastelli, Armando
last_name: Rastelli
- first_name: Mathieu
full_name: Stoffel, Mathieu
last_name: Stoffel
- first_name: Georgios
full_name: Georgios Katsaros
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
- first_name: Jerry
full_name: Tersoff, Jerry
last_name: Tersoff
- first_name: Ulrich
full_name: Denker, Ulrich
last_name: Denker
- first_name: Tsvetelina
full_name: Merdzhanova, Tsvetelina
last_name: Merdzhanova
- first_name: Gouranga
full_name: Kar, Gouranga S
last_name: Kar
- first_name: Giovanni
full_name: Costantini, Giovanni
last_name: Costantini
- first_name: Klaus
full_name: Kern, Klaus
last_name: Kern
- first_name: Hans
full_name: Von Känel, Hans
last_name: Von Känel
- first_name: Oliver
full_name: Schmidt, Oliver G
last_name: Schmidt
citation:
ama: Rastelli A, Stoffel M, Katsaros G, et al. Reading the footprints of strained
islands. Microelectronics Journal. 2006;37(12):1471-1476. doi:10.1016/j.mejo.2006.05.029
apa: Rastelli, A., Stoffel, M., Katsaros, G., Tersoff, J., Denker, U., Merdzhanova,
T., … Schmidt, O. (2006). Reading the footprints of strained islands. Microelectronics
Journal. Elsevier. https://doi.org/10.1016/j.mejo.2006.05.029
chicago: Rastelli, Armando, Mathieu Stoffel, Georgios Katsaros, Jerry Tersoff, Ulrich
Denker, Tsvetelina Merdzhanova, Gouranga Kar, et al. “Reading the Footprints of
Strained Islands.” Microelectronics Journal. Elsevier, 2006. https://doi.org/10.1016/j.mejo.2006.05.029.
ieee: A. Rastelli et al., “Reading the footprints of strained islands,” Microelectronics
Journal, vol. 37, no. 12. Elsevier, pp. 1471–1476, 2006.
ista: Rastelli A, Stoffel M, Katsaros G, Tersoff J, Denker U, Merdzhanova T, Kar
G, Costantini G, Kern K, Von Känel H, Schmidt O. 2006. Reading the footprints
of strained islands. Microelectronics Journal. 37(12), 1471–1476.
mla: Rastelli, Armando, et al. “Reading the Footprints of Strained Islands.” Microelectronics
Journal, vol. 37, no. 12, Elsevier, 2006, pp. 1471–76, doi:10.1016/j.mejo.2006.05.029.
short: A. Rastelli, M. Stoffel, G. Katsaros, J. Tersoff, U. Denker, T. Merdzhanova,
G. Kar, G. Costantini, K. Kern, H. Von Känel, O. Schmidt, Microelectronics Journal
37 (2006) 1471–1476.
date_created: 2018-12-11T11:53:47Z
date_published: 2006-12-01T00:00:00Z
date_updated: 2021-01-12T06:52:57Z
day: '01'
doi: 10.1016/j.mejo.2006.05.029
extern: 1
intvolume: ' 37'
issue: '12'
month: '12'
page: 1471 - 1476
publication: Microelectronics Journal
publication_status: published
publisher: Elsevier
publist_id: '5377'
quality_controlled: 0
status: public
title: Reading the footprints of strained islands
type: journal_article
volume: 37
year: '2006'
...
---
_id: '1746'
abstract:
- lang: eng
text: 'A microscopic picture for the GaAs overgrowth of self-organized InAs/GaAs(001)
quantum dots is developed. Scanning tunneling microscopy measurements reveal two
capping regimes: the first being characterized by a dot shrinking and a backward
pyramid-to-dome shape transition. This regime is governed by fast dynamics resulting
in island morphologies close to thermodynamic equilibrium. The second regime is
marked by a true overgrowth and is controlled by kinetically limited surface diffusion
processes. A simple model is developed to describe the observed structural changes
which are rationalized in terms of energetic minimization driven by lattice mismatch
and alloying.'
author:
- first_name: Giovanni
full_name: Costantini, Giovanni
last_name: Costantini
- first_name: Armando
full_name: Rastelli, Armando
last_name: Rastelli
- first_name: Carlos
full_name: Manzano, Carlos
last_name: Manzano
- first_name: P
full_name: Acosta-Diaz, P
last_name: Acosta Diaz
- first_name: Rudeeson
full_name: Songmuang, Rudeeson
last_name: Songmuang
- first_name: Georgios
full_name: Georgios Katsaros
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
- first_name: Oliver
full_name: Schmidt, Oliver G
last_name: Schmidt
- first_name: Klaus
full_name: Kern, Klaus
last_name: Kern
citation:
ama: Costantini G, Rastelli A, Manzano C, et al. Interplay between thermodynamics
and kinetics in the capping of InAs/GaAs (001) quantum dots. Physical Review
Letters. 2006;96(22). doi:10.1103/PhysRevLett.96.226106
apa: Costantini, G., Rastelli, A., Manzano, C., Acosta Diaz, P., Songmuang, R.,
Katsaros, G., … Kern, K. (2006). Interplay between thermodynamics and kinetics
in the capping of InAs/GaAs (001) quantum dots. Physical Review Letters.
American Physical Society. https://doi.org/10.1103/PhysRevLett.96.226106
chicago: Costantini, Giovanni, Armando Rastelli, Carlos Manzano, P Acosta Diaz,
Rudeeson Songmuang, Georgios Katsaros, Oliver Schmidt, and Klaus Kern. “Interplay
between Thermodynamics and Kinetics in the Capping of InAs/GaAs (001) Quantum
Dots.” Physical Review Letters. American Physical Society, 2006. https://doi.org/10.1103/PhysRevLett.96.226106.
ieee: G. Costantini et al., “Interplay between thermodynamics and kinetics
in the capping of InAs/GaAs (001) quantum dots,” Physical Review Letters,
vol. 96, no. 22. American Physical Society, 2006.
ista: Costantini G, Rastelli A, Manzano C, Acosta Diaz P, Songmuang R, Katsaros
G, Schmidt O, Kern K. 2006. Interplay between thermodynamics and kinetics in the
capping of InAs/GaAs (001) quantum dots. Physical Review Letters. 96(22).
mla: Costantini, Giovanni, et al. “Interplay between Thermodynamics and Kinetics
in the Capping of InAs/GaAs (001) Quantum Dots.” Physical Review Letters,
vol. 96, no. 22, American Physical Society, 2006, doi:10.1103/PhysRevLett.96.226106.
short: G. Costantini, A. Rastelli, C. Manzano, P. Acosta Diaz, R. Songmuang, G.
Katsaros, O. Schmidt, K. Kern, Physical Review Letters 96 (2006).
date_created: 2018-12-11T11:53:47Z
date_published: 2006-01-01T00:00:00Z
date_updated: 2021-01-12T06:52:56Z
day: '01'
doi: 10.1103/PhysRevLett.96.226106
extern: 1
intvolume: ' 96'
issue: '22'
month: '01'
publication: Physical Review Letters
publication_status: published
publisher: American Physical Society
publist_id: '5378'
quality_controlled: 0
status: public
title: Interplay between thermodynamics and kinetics in the capping of InAs/GaAs (001)
quantum dots
type: journal_article
volume: 96
year: '2006'
...
---
_id: '1748'
abstract:
- lang: eng
text: The authors apply selective wet chemical etching and atomic force microscopy
to reveal the three-dimensional shape of SiGeSi (001) islands after capping with
Si. Although the "self-assembled quantum dots" remain practically unaffected
by capping in the temperature range of 300-450 °C, significant morphological changes
take place on the Si surface. At 450 °C, the morphology of the capping layer (Si
matrix) evolves toward an intriguing semifacetted structure, which we call a "ziggurat,"
giving the misleading impression of a stepped SiGe island shape.
author:
- first_name: Georgios
full_name: Georgios Katsaros
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
- first_name: Armando
full_name: Rastelli, Armando
last_name: Rastelli
- first_name: Mathieu
full_name: Stoffel, Mathieu
last_name: Stoffel
- first_name: Giovanni
full_name: Costantini, Giovanni
last_name: Costantini
- first_name: Oliver
full_name: Schmidt, Oliver G
last_name: Schmidt
- first_name: Klaus
full_name: Kern, Klaus
last_name: Kern
- first_name: Jerry
full_name: Tersoff, Jerry
last_name: Tersoff
- first_name: Elisabeth
full_name: Müller, Elisabeth
last_name: Müller
- first_name: Hans
full_name: Von Känel, Hans
last_name: Von Känel
citation:
ama: Katsaros G, Rastelli A, Stoffel M, et al. Evolution of buried semiconductor
nanostructures and origin of stepped surface mounds during capping. Applied
Physics Letters. 2006;89(25). doi:10.1063/1.2405876
apa: Katsaros, G., Rastelli, A., Stoffel, M., Costantini, G., Schmidt, O., Kern,
K., … Von Känel, H. (2006). Evolution of buried semiconductor nanostructures and
origin of stepped surface mounds during capping. Applied Physics Letters.
American Institute of Physics. https://doi.org/10.1063/1.2405876
chicago: Katsaros, Georgios, Armando Rastelli, Mathieu Stoffel, Giovanni Costantini,
Oliver Schmidt, Klaus Kern, Jerry Tersoff, Elisabeth Müller, and Hans Von Känel.
“Evolution of Buried Semiconductor Nanostructures and Origin of Stepped Surface
Mounds during Capping.” Applied Physics Letters. American Institute of
Physics, 2006. https://doi.org/10.1063/1.2405876.
ieee: G. Katsaros et al., “Evolution of buried semiconductor nanostructures
and origin of stepped surface mounds during capping,” Applied Physics Letters,
vol. 89, no. 25. American Institute of Physics, 2006.
ista: Katsaros G, Rastelli A, Stoffel M, Costantini G, Schmidt O, Kern K, Tersoff
J, Müller E, Von Känel H. 2006. Evolution of buried semiconductor nanostructures
and origin of stepped surface mounds during capping. Applied Physics Letters.
89(25).
mla: Katsaros, Georgios, et al. “Evolution of Buried Semiconductor Nanostructures
and Origin of Stepped Surface Mounds during Capping.” Applied Physics Letters,
vol. 89, no. 25, American Institute of Physics, 2006, doi:10.1063/1.2405876.
short: G. Katsaros, A. Rastelli, M. Stoffel, G. Costantini, O. Schmidt, K. Kern,
J. Tersoff, E. Müller, H. Von Känel, Applied Physics Letters 89 (2006).
date_created: 2018-12-11T11:53:48Z
date_published: 2006-01-01T00:00:00Z
date_updated: 2021-01-12T06:52:57Z
day: '01'
doi: 10.1063/1.2405876
extern: 1
intvolume: ' 89'
issue: '25'
month: '01'
publication: Applied Physics Letters
publication_status: published
publisher: American Institute of Physics
publist_id: '5376'
quality_controlled: 0
status: public
title: Evolution of buried semiconductor nanostructures and origin of stepped surface
mounds during capping
type: journal_article
volume: 89
year: '2006'
...
---
_id: '1796'
abstract:
- lang: eng
text: Drugs that block the entry of human immunodeficiency virus type 1 (HIV-1)
into host cells abrogate the establishment of a productive infection and should
ideally diminish the chances of HIV-1 developing resistance. This review will
give an overview of the mechanism by which the envelope glycoprotein mediates
HIV-1 entry and will summarize current drug developments.
author:
- first_name: Sandra
full_name: Sandra Siegert
id: 36ACD32E-F248-11E8-B48F-1D18A9856A87
last_name: Siegert
orcid: 0000-0001-8635-0877
- first_name: Peter
full_name: Schnierle, Peter
last_name: Schnierle
- first_name: Barbara
full_name: Schnierle, Barbara S
last_name: Schnierle
citation:
ama: 'Siegert S, Schnierle P, Schnierle B. Novel anti-viral therapy: Drugs that
block HIV entry at different target sites. Mini-Reviews in Medicinal Chemistry.
2006;6(5):557-562. doi:10.2174/138955706776876267'
apa: 'Siegert, S., Schnierle, P., & Schnierle, B. (2006). Novel anti-viral therapy:
Drugs that block HIV entry at different target sites. Mini-Reviews in Medicinal
Chemistry. Bentham Science Publishers. https://doi.org/10.2174/138955706776876267'
chicago: 'Siegert, Sandra, Peter Schnierle, and Barbara Schnierle. “Novel Anti-Viral
Therapy: Drugs That Block HIV Entry at Different Target Sites.” Mini-Reviews
in Medicinal Chemistry. Bentham Science Publishers, 2006. https://doi.org/10.2174/138955706776876267.'
ieee: 'S. Siegert, P. Schnierle, and B. Schnierle, “Novel anti-viral therapy: Drugs
that block HIV entry at different target sites,” Mini-Reviews in Medicinal
Chemistry, vol. 6, no. 5. Bentham Science Publishers, pp. 557–562, 2006.'
ista: 'Siegert S, Schnierle P, Schnierle B. 2006. Novel anti-viral therapy: Drugs
that block HIV entry at different target sites. Mini-Reviews in Medicinal Chemistry.
6(5), 557–562.'
mla: 'Siegert, Sandra, et al. “Novel Anti-Viral Therapy: Drugs That Block HIV Entry
at Different Target Sites.” Mini-Reviews in Medicinal Chemistry, vol. 6,
no. 5, Bentham Science Publishers, 2006, pp. 557–62, doi:10.2174/138955706776876267.'
short: S. Siegert, P. Schnierle, B. Schnierle, Mini-Reviews in Medicinal Chemistry
6 (2006) 557–562.
date_created: 2018-12-11T11:54:03Z
date_published: 2006-05-01T00:00:00Z
date_updated: 2021-01-12T06:53:15Z
day: '01'
doi: 10.2174/138955706776876267
extern: 1
intvolume: ' 6'
issue: '5'
month: '05'
page: 557 - 562
publication: Mini-Reviews in Medicinal Chemistry
publication_status: published
publisher: Bentham Science Publishers
publist_id: '5314'
quality_controlled: 0
status: public
title: 'Novel anti-viral therapy: Drugs that block HIV entry at different target sites'
type: journal_article
volume: 6
year: '2006'
...
---
_id: '1961'
abstract:
- lang: eng
text: |
Respiratory complex I plays a central role in cellular energy production in bacteria and mitochondria. Its dysfunction is implicated in many human neurodegenerative diseases, as well as in aging. The crystal structure of the hydrophilic domain (peripheral arm) of complex I from Thermus thermophilus has been solved at 3.3 angstrom resolution. This subcomplex consists of eight subunits and contains all the redox centers of the enzyme, including nine iron-sulfur clusters. The primary electron acceptor, flavin-mononucleotide, is within electron transfer distance of cluster N3, leading to the main redox pathway, and of the distal cluster Nia, a possible antioxidant. The structure reveals new aspects of the mechanism and evolution of the enzyme. The terminal cluster N2 is coordinated, uniquely, by two consecutive cysteines. The novel subunit Nqo15 has a similar fold to the mitochondrial iron chaperone frataxin, and it may be involved in iron-sulfur cluster regeneration in the complex.
acknowledgement: This work was funded by the Medical Research Council.
author:
- first_name: Leonid A
full_name: Leonid Sazanov
id: 338D39FE-F248-11E8-B48F-1D18A9856A87
last_name: Sazanov
orcid: 0000-0002-0977-7989
- first_name: Philip
full_name: 'Hinchliffe, Philip '
last_name: Hinchliffe
citation:
ama: Sazanov LA, Hinchliffe P. Structure of the hydrophilic domain of respiratory
complex I from Thermus thermophilus. Science. 2006;311(5766):1430-1436.
doi:10.1126/science.1123809
apa: Sazanov, L. A., & Hinchliffe, P. (2006). Structure of the hydrophilic domain
of respiratory complex I from Thermus thermophilus. Science. American Association
for the Advancement of Science. https://doi.org/10.1126/science.1123809
chicago: Sazanov, Leonid A, and Philip Hinchliffe. “Structure of the Hydrophilic
Domain of Respiratory Complex I from Thermus Thermophilus.” Science. American
Association for the Advancement of Science, 2006. https://doi.org/10.1126/science.1123809.
ieee: L. A. Sazanov and P. Hinchliffe, “Structure of the hydrophilic domain of respiratory
complex I from Thermus thermophilus,” Science, vol. 311, no. 5766. American
Association for the Advancement of Science, pp. 1430–1436, 2006.
ista: Sazanov LA, Hinchliffe P. 2006. Structure of the hydrophilic domain of respiratory
complex I from Thermus thermophilus. Science. 311(5766), 1430–1436.
mla: Sazanov, Leonid A., and Philip Hinchliffe. “Structure of the Hydrophilic Domain
of Respiratory Complex I from Thermus Thermophilus.” Science, vol. 311,
no. 5766, American Association for the Advancement of Science, 2006, pp. 1430–36,
doi:10.1126/science.1123809.
short: L.A. Sazanov, P. Hinchliffe, Science 311 (2006) 1430–1436.
date_created: 2018-12-11T11:54:56Z
date_published: 2006-03-10T00:00:00Z
date_updated: 2021-01-12T06:54:22Z
day: '10'
doi: 10.1126/science.1123809
extern: 1
intvolume: ' 311'
issue: '5766'
month: '03'
page: 1430 - 1436
publication: Science
publication_status: published
publisher: American Association for the Advancement of Science
publist_id: '5121'
quality_controlled: 0
status: public
title: Structure of the hydrophilic domain of respiratory complex I from Thermus thermophilus
type: journal_article
volume: 311
year: '2006'
...