---
_id: '1740'
abstract:
- lang: eng
text: 'A systematic study of the morphology of self-organized islands in the InAs/GaAs(0
0 1) and Ge/Si(0 0 1) systems is presented, based on high-resolution scanning
tunneling microscopy measurements. We demonstrate that in both cases two main
island families coexist: smaller pyramids bound by one type of shallow facets
and larger multifaceted domes. Their structure and facet orientation are precisely
determined, thus solving a highly debated argument in the case of InAs/GaAs(0
0 1). The comparison between the two material systems reveals the existence of
striking similarities that extend even to the nature of island precursors and
to the islands that form when depositing InGaAs or GeSi alloys. The implications
of these observations on a possible universal description of the Stranski-Krastanow
growth mode are discussed with respect to recent theoretical results.'
author:
- first_name: Giovanni
full_name: Costantini, Giovanni
last_name: Costantini
- first_name: Armando
full_name: Rastelli, Armando
last_name: Rastelli
- first_name: Carlos
full_name: Manzano, Carlos
last_name: Manzano
- first_name: P
full_name: Acosta-Diaz, P
last_name: Acosta Diaz
- first_name: Georgios
full_name: Georgios Katsaros
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
- first_name: Rudeeson
full_name: Songmuang, Rudeeson
last_name: Songmuang
- first_name: Oliver
full_name: Schmidt, Oliver G
last_name: Schmidt
- first_name: Hans
full_name: Von Känel, Hans
last_name: Von Känel
- first_name: Klaus
full_name: Kern, Klaus
last_name: Kern
citation:
ama: Costantini G, Rastelli A, Manzano C, et al. Pyramids and domes in the InAs/GaAs
(0 0 1) and Ge/Si (0 0 1) systems. Journal of Crystal Growth. 2005;278(1-4):38-45.
doi:10.1016/j.jcrysgro.2004.12.047
apa: Costantini, G., Rastelli, A., Manzano, C., Acosta Diaz, P., Katsaros, G., Songmuang,
R., … Kern, K. (2005). Pyramids and domes in the InAs/GaAs (0 0 1) and Ge/Si (0
0 1) systems. Journal of Crystal Growth. Elsevier. https://doi.org/10.1016/j.jcrysgro.2004.12.047
chicago: Costantini, Giovanni, Armando Rastelli, Carlos Manzano, P Acosta Diaz,
Georgios Katsaros, Rudeeson Songmuang, Oliver Schmidt, Hans Von Känel, and Klaus
Kern. “Pyramids and Domes in the InAs/GaAs (0 0 1) and Ge/Si (0 0 1) Systems.”
Journal of Crystal Growth. Elsevier, 2005. https://doi.org/10.1016/j.jcrysgro.2004.12.047.
ieee: G. Costantini et al., “Pyramids and domes in the InAs/GaAs (0 0 1)
and Ge/Si (0 0 1) systems,” Journal of Crystal Growth, vol. 278, no. 1–4.
Elsevier, pp. 38–45, 2005.
ista: Costantini G, Rastelli A, Manzano C, Acosta Diaz P, Katsaros G, Songmuang
R, Schmidt O, Von Känel H, Kern K. 2005. Pyramids and domes in the InAs/GaAs (0
0 1) and Ge/Si (0 0 1) systems. Journal of Crystal Growth. 278(1–4), 38–45.
mla: Costantini, Giovanni, et al. “Pyramids and Domes in the InAs/GaAs (0 0 1) and
Ge/Si (0 0 1) Systems.” Journal of Crystal Growth, vol. 278, no. 1–4, Elsevier,
2005, pp. 38–45, doi:10.1016/j.jcrysgro.2004.12.047.
short: G. Costantini, A. Rastelli, C. Manzano, P. Acosta Diaz, G. Katsaros, R. Songmuang,
O. Schmidt, H. Von Känel, K. Kern, Journal of Crystal Growth 278 (2005) 38–45.
date_created: 2018-12-11T11:53:45Z
date_published: 2005-05-01T00:00:00Z
date_updated: 2021-01-12T06:52:54Z
day: '01'
doi: 10.1016/j.jcrysgro.2004.12.047
extern: 1
intvolume: ' 278'
issue: 1-4
month: '05'
page: 38 - 45
publication: Journal of Crystal Growth
publication_status: published
publisher: Elsevier
publist_id: '5384'
quality_controlled: 0
status: public
title: Pyramids and domes in the InAs/GaAs (0 0 1) and Ge/Si (0 0 1) systems
type: journal_article
volume: 278
year: '2005'
...
---
_id: '1743'
abstract:
- lang: eng
text: Laterally aligned multilayer GeSiSi islands grown on a patterned Si (001)
substrate are disclosed by selective etching of Si in a KOH solution. This procedure
allows us to visualize the vertical alignment of the islands in a three-dimensional
perspective. Our technique reveals that partly coalesced double islands in the
initial layer do not merge together, but instead gradually reproduce into well-separated
double islands in upper layers. We attribute this effect to very thin spacer layers,
which efficiently transfer the strain modulation of each island through the spacer
layer to the surface. The etching rate of Si is reduced in tensile strained regions,
which helps to preserve sufficient Si between the stacked islands to form a periodic
array of freestanding and vertically modulated heterostructure pillars.
acknowledgement: This work was supported by the BMBF (03N8711) and the EU NOE SANDiE
author:
- first_name: Zheyang
full_name: Zhong, Zheyang
last_name: Zhong
- first_name: Georgios
full_name: Georgios Katsaros
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
- first_name: Mathieu
full_name: Stoffel, Mathieu
last_name: Stoffel
- first_name: Giovanni
full_name: Costantini, Giovanni
last_name: Costantini
- first_name: Klaus
full_name: Kern, Klaus
last_name: Kern
- first_name: Oliver
full_name: Schmidt, Oliver G
last_name: Schmidt
- first_name: Neng
full_name: Jin-Phillipp, Neng Y
last_name: Jin Phillipp
- first_name: Günther
full_name: Bauer, Günther
last_name: Bauer
citation:
ama: Zhong Z, Katsaros G, Stoffel M, et al. Periodic pillar structures by Si etching
of multilayer GeSi/Si islands. Applied Physics Letters. 2005;87(26):1-3.
doi:10.1063/1.2150278
apa: Zhong, Z., Katsaros, G., Stoffel, M., Costantini, G., Kern, K., Schmidt, O.,
… Bauer, G. (2005). Periodic pillar structures by Si etching of multilayer GeSi/Si
islands. Applied Physics Letters. American Institute of Physics. https://doi.org/10.1063/1.2150278
chicago: Zhong, Zheyang, Georgios Katsaros, Mathieu Stoffel, Giovanni Costantini,
Klaus Kern, Oliver Schmidt, Neng Jin Phillipp, and Günther Bauer. “Periodic Pillar
Structures by Si Etching of Multilayer GeSi/Si Islands.” Applied Physics Letters.
American Institute of Physics, 2005. https://doi.org/10.1063/1.2150278.
ieee: Z. Zhong et al., “Periodic pillar structures by Si etching of multilayer
GeSi/Si islands,” Applied Physics Letters, vol. 87, no. 26. American Institute
of Physics, pp. 1–3, 2005.
ista: Zhong Z, Katsaros G, Stoffel M, Costantini G, Kern K, Schmidt O, Jin Phillipp
N, Bauer G. 2005. Periodic pillar structures by Si etching of multilayer GeSi/Si
islands. Applied Physics Letters. 87(26), 1–3.
mla: Zhong, Zheyang, et al. “Periodic Pillar Structures by Si Etching of Multilayer
GeSi/Si Islands.” Applied Physics Letters, vol. 87, no. 26, American Institute
of Physics, 2005, pp. 1–3, doi:10.1063/1.2150278.
short: Z. Zhong, G. Katsaros, M. Stoffel, G. Costantini, K. Kern, O. Schmidt, N.
Jin Phillipp, G. Bauer, Applied Physics Letters 87 (2005) 1–3.
date_created: 2018-12-11T11:53:46Z
date_published: 2005-01-01T00:00:00Z
date_updated: 2021-01-12T06:52:55Z
day: '01'
doi: 10.1063/1.2150278
extern: 1
intvolume: ' 87'
issue: '26'
month: '01'
page: 1 - 3
publication: Applied Physics Letters
publication_status: published
publisher: American Institute of Physics
publist_id: '5381'
quality_controlled: 0
status: public
title: Periodic pillar structures by Si etching of multilayer GeSi/Si islands
type: journal_article
volume: 87
year: '2005'
...
---
_id: '1744'
abstract:
- lang: eng
text: This paper presents optical duobinary and dicode signalling, as alternatives
to the binary format, in order to improve the transmission performance in the
presense of non-linear effects in a dense wavelength division multiplex (WDM)
optical system. Duobinary signalling is applied to an optical system to explore
the reduction of stimulated Brillouin scattering (SBS) effects. Duobinary signalling
suppresses the SBS effects, and an eye-opening improvement of 0.25 to 1.2 dB is
achieved relative to binary transmission over a range of input power levels. An
experimental study demonstrates that duobinary modulation suppresses the four
wave mixing (FWM) products of a dense WDM system by a maximum of 3 dB. The suppression
is maintained over a range of channel spacings. An investigation of the impact
of fibre dispersion on FWM products under binary, duobinary and dicode modulation
in a dense WDM system is then performed, with interchannel spacing and optical
power variation. This leads to the development of a set of guidelines for the
application areas, in which it is appropriate to use duobinary or dicode modulation
in WDM systems as a means of mitigating the impact of FWM.
acknowledgement: IET
author:
- first_name: Georgios
full_name: Georgios Katsaros
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
- first_name: Izzat
full_name: Darwazeh, Izzat Z
last_name: Darwazeh
- first_name: Phil
full_name: Lane, Phil M
last_name: Lane
citation:
ama: Katsaros G, Darwazeh I, Lane P. Non linear transmission effects in duobinary
and dicode optical systems. IEE Proceedings - Optoelectronics. 2005;152(6):344-352.
doi:10.1049/ip-opt:20045067
apa: Katsaros, G., Darwazeh, I., & Lane, P. (2005). Non linear transmission
effects in duobinary and dicode optical systems. IEE Proceedings - Optoelectronics.
Institute of Electrical Engineers. https://doi.org/10.1049/ip-opt:20045067
chicago: Katsaros, Georgios, Izzat Darwazeh, and Phil Lane. “Non Linear Transmission
Effects in Duobinary and Dicode Optical Systems.” IEE Proceedings - Optoelectronics.
Institute of Electrical Engineers, 2005. https://doi.org/10.1049/ip-opt:20045067.
ieee: G. Katsaros, I. Darwazeh, and P. Lane, “Non linear transmission effects in
duobinary and dicode optical systems,” IEE Proceedings - Optoelectronics,
vol. 152, no. 6. Institute of Electrical Engineers, pp. 344–352, 2005.
ista: Katsaros G, Darwazeh I, Lane P. 2005. Non linear transmission effects in duobinary
and dicode optical systems. IEE Proceedings - Optoelectronics. 152(6), 344–352.
mla: Katsaros, Georgios, et al. “Non Linear Transmission Effects in Duobinary and
Dicode Optical Systems.” IEE Proceedings - Optoelectronics, vol. 152, no.
6, Institute of Electrical Engineers, 2005, pp. 344–52, doi:10.1049/ip-opt:20045067.
short: G. Katsaros, I. Darwazeh, P. Lane, IEE Proceedings - Optoelectronics 152
(2005) 344–352.
date_created: 2018-12-11T11:53:46Z
date_published: 2005-12-01T00:00:00Z
date_updated: 2021-01-12T06:52:55Z
day: '01'
doi: 10.1049/ip-opt:20045067
extern: 1
intvolume: ' 152'
issue: '6'
month: '12'
page: 344 - 352
publication: IEE Proceedings - Optoelectronics
publication_status: published
publisher: Institute of Electrical Engineers
publist_id: '5380'
quality_controlled: 0
status: public
title: Non linear transmission effects in duobinary and dicode optical systems
type: journal_article
volume: 152
year: '2005'
...
---
_id: '1741'
abstract:
- lang: eng
text: SiGe islands move laterally on a Si(001) substrate during in situ postgrowth
annealing. This surprising behavior is revealed by an analysis of the substrate
surface morphology after island removal using wet chemical etching. We explain
the island motion by asymmetric surface-mediated alloying. Material leaves one
side of the island by surface diffusion, and mixes with additional Si from the
surrounding surface as it redeposits on the other side. Thus the island moves
laterally while becoming larger and more dilute.
acknowledgement: The work was supported by the BMBF (03N8711)
author:
- first_name: Ulrich
full_name: Denker, Ulrich
last_name: Denker
- first_name: Armando
full_name: Rastelli, Armando
last_name: Rastelli
- first_name: Mathieu
full_name: Stoffel, Mathieu
last_name: Stoffel
- first_name: Jerry
full_name: Tersoff, Jerry
last_name: Tersoff
- first_name: Georgios
full_name: Georgios Katsaros
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
- first_name: Giovanni
full_name: Costantini, Giovanni
last_name: Costantini
- first_name: Klaus
full_name: Kern, Klaus
last_name: Kern
- first_name: Neng
full_name: Jin-Phillipp, Neng Y
last_name: Jin Phillipp
- first_name: David
full_name: Jesson, David E
last_name: Jesson
- first_name: Oliver
full_name: Schmidt, Oliver G
last_name: Schmidt
citation:
ama: Denker U, Rastelli A, Stoffel M, et al. Lateral motion of SiGe islands driven
by surface-mediated alloying. Physical Review Letters. 2005;94(21). doi:10.1103/PhysRevLett.94.216103
apa: Denker, U., Rastelli, A., Stoffel, M., Tersoff, J., Katsaros, G., Costantini,
G., … Schmidt, O. (2005). Lateral motion of SiGe islands driven by surface-mediated
alloying. Physical Review Letters. American Physical Society. https://doi.org/10.1103/PhysRevLett.94.216103
chicago: Denker, Ulrich, Armando Rastelli, Mathieu Stoffel, Jerry Tersoff, Georgios
Katsaros, Giovanni Costantini, Klaus Kern, Neng Jin Phillipp, David Jesson, and
Oliver Schmidt. “Lateral Motion of SiGe Islands Driven by Surface-Mediated Alloying.”
Physical Review Letters. American Physical Society, 2005. https://doi.org/10.1103/PhysRevLett.94.216103.
ieee: U. Denker et al., “Lateral motion of SiGe islands driven by surface-mediated
alloying,” Physical Review Letters, vol. 94, no. 21. American Physical
Society, 2005.
ista: Denker U, Rastelli A, Stoffel M, Tersoff J, Katsaros G, Costantini G, Kern
K, Jin Phillipp N, Jesson D, Schmidt O. 2005. Lateral motion of SiGe islands driven
by surface-mediated alloying. Physical Review Letters. 94(21).
mla: Denker, Ulrich, et al. “Lateral Motion of SiGe Islands Driven by Surface-Mediated
Alloying.” Physical Review Letters, vol. 94, no. 21, American Physical
Society, 2005, doi:10.1103/PhysRevLett.94.216103.
short: U. Denker, A. Rastelli, M. Stoffel, J. Tersoff, G. Katsaros, G. Costantini,
K. Kern, N. Jin Phillipp, D. Jesson, O. Schmidt, Physical Review Letters 94 (2005).
date_created: 2018-12-11T11:53:46Z
date_published: 2005-06-03T00:00:00Z
date_updated: 2021-01-12T06:52:54Z
day: '03'
doi: 10.1103/PhysRevLett.94.216103
extern: 1
intvolume: ' 94'
issue: '21'
month: '06'
publication: Physical Review Letters
publication_status: published
publisher: American Physical Society
publist_id: '5383'
quality_controlled: 0
status: public
title: Lateral motion of SiGe islands driven by surface-mediated alloying
type: journal_article
volume: 94
year: '2005'
...
---
_id: '1795'
abstract:
- lang: eng
text: 'Background: Murine leukemia virus (MLV) vector particles can be pseudotyped
with a truncated variant of the human immunodeficiency virus type 1 (HIV-1) envelope
protein (Env) and selectively target gene transfer to human cells expressing both
CD4 and an appropriate co-receptor. Vector transduction mimics the HIV-1 entry
process and is therefore a safe tool to study HIV-1 entry. Results: Using FLY
cells, which express the MLV gag and pol genes, we generated stable producer cell
lines that express the HIV-1 envelope gene and a retroviral vector genome encoding
the green fluorescent protein (GFP). The BH10 or 89.6 P HIV-1 Env was expressed
from a bicistronic vector which allowed the rapid selection of stable cell lines.
A codon-usage-optimized synthetic env gene permitted high, Rev-independent Env
expression. Vectors generated by these producer cells displayed different sensitivity
to entry inhibitors. Conclusion: These data illustrate that MLV/HIV-1 vectors
are a valuable screening system for entry inhibitors or neutralizing antisera
generated by vaccines.'
author:
- first_name: Sandra
full_name: Sandra Siegert
id: 36ACD32E-F248-11E8-B48F-1D18A9856A87
last_name: Siegert
orcid: 0000-0001-8635-0877
- first_name: Sonja
full_name: Thaler, Sonja
last_name: Thaler
- first_name: Ralf
full_name: Wagner, Ralf
last_name: Wagner
- first_name: Barbara
full_name: Schnierle, Barbara S
last_name: Schnierle
citation:
ama: Siegert S, Thaler S, Wagner R, Schnierle B. Assessment of HIV-1 entry inhibitors
by MLV/HIV-1 pseudotyped vectors. AIDS Research and Therapy. 2005;2(1).
doi:10.1186/1742-6405-2-7
apa: Siegert, S., Thaler, S., Wagner, R., & Schnierle, B. (2005). Assessment
of HIV-1 entry inhibitors by MLV/HIV-1 pseudotyped vectors. AIDS Research and
Therapy. BioMed Central. https://doi.org/10.1186/1742-6405-2-7
chicago: Siegert, Sandra, Sonja Thaler, Ralf Wagner, and Barbara Schnierle. “Assessment
of HIV-1 Entry Inhibitors by MLV/HIV-1 Pseudotyped Vectors.” AIDS Research
and Therapy. BioMed Central, 2005. https://doi.org/10.1186/1742-6405-2-7.
ieee: S. Siegert, S. Thaler, R. Wagner, and B. Schnierle, “Assessment of HIV-1 entry
inhibitors by MLV/HIV-1 pseudotyped vectors,” AIDS Research and Therapy,
vol. 2, no. 1. BioMed Central, 2005.
ista: Siegert S, Thaler S, Wagner R, Schnierle B. 2005. Assessment of HIV-1 entry
inhibitors by MLV/HIV-1 pseudotyped vectors. AIDS Research and Therapy. 2(1).
mla: Siegert, Sandra, et al. “Assessment of HIV-1 Entry Inhibitors by MLV/HIV-1
Pseudotyped Vectors.” AIDS Research and Therapy, vol. 2, no. 1, BioMed
Central, 2005, doi:10.1186/1742-6405-2-7.
short: S. Siegert, S. Thaler, R. Wagner, B. Schnierle, AIDS Research and Therapy
2 (2005).
date_created: 2018-12-11T11:54:03Z
date_published: 2005-09-12T00:00:00Z
date_updated: 2021-01-12T06:53:15Z
day: '12'
doi: 10.1186/1742-6405-2-7
extern: 1
intvolume: ' 2'
issue: '1'
month: '09'
publication: AIDS Research and Therapy
publication_status: published
publisher: BioMed Central
publist_id: '5315'
quality_controlled: 0
status: public
title: Assessment of HIV-1 entry inhibitors by MLV/HIV-1 pseudotyped vectors
type: journal_article
volume: 2
year: '2005'
...