--- _id: '1740' abstract: - lang: eng text: 'A systematic study of the morphology of self-organized islands in the InAs/GaAs(0 0 1) and Ge/Si(0 0 1) systems is presented, based on high-resolution scanning tunneling microscopy measurements. We demonstrate that in both cases two main island families coexist: smaller pyramids bound by one type of shallow facets and larger multifaceted domes. Their structure and facet orientation are precisely determined, thus solving a highly debated argument in the case of InAs/GaAs(0 0 1). The comparison between the two material systems reveals the existence of striking similarities that extend even to the nature of island precursors and to the islands that form when depositing InGaAs or GeSi alloys. The implications of these observations on a possible universal description of the Stranski-Krastanow growth mode are discussed with respect to recent theoretical results.' author: - first_name: Giovanni full_name: Costantini, Giovanni last_name: Costantini - first_name: Armando full_name: Rastelli, Armando last_name: Rastelli - first_name: Carlos full_name: Manzano, Carlos last_name: Manzano - first_name: P full_name: Acosta-Diaz, P last_name: Acosta Diaz - first_name: Georgios full_name: Georgios Katsaros id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros - first_name: Rudeeson full_name: Songmuang, Rudeeson last_name: Songmuang - first_name: Oliver full_name: Schmidt, Oliver G last_name: Schmidt - first_name: Hans full_name: Von Känel, Hans last_name: Von Känel - first_name: Klaus full_name: Kern, Klaus last_name: Kern citation: ama: Costantini G, Rastelli A, Manzano C, et al. Pyramids and domes in the InAs/GaAs (0 0 1) and Ge/Si (0 0 1) systems. Journal of Crystal Growth. 2005;278(1-4):38-45. doi:10.1016/j.jcrysgro.2004.12.047 apa: Costantini, G., Rastelli, A., Manzano, C., Acosta Diaz, P., Katsaros, G., Songmuang, R., … Kern, K. (2005). Pyramids and domes in the InAs/GaAs (0 0 1) and Ge/Si (0 0 1) systems. Journal of Crystal Growth. Elsevier. https://doi.org/10.1016/j.jcrysgro.2004.12.047 chicago: Costantini, Giovanni, Armando Rastelli, Carlos Manzano, P Acosta Diaz, Georgios Katsaros, Rudeeson Songmuang, Oliver Schmidt, Hans Von Känel, and Klaus Kern. “Pyramids and Domes in the InAs/GaAs (0 0 1) and Ge/Si (0 0 1) Systems.” Journal of Crystal Growth. Elsevier, 2005. https://doi.org/10.1016/j.jcrysgro.2004.12.047. ieee: G. Costantini et al., “Pyramids and domes in the InAs/GaAs (0 0 1) and Ge/Si (0 0 1) systems,” Journal of Crystal Growth, vol. 278, no. 1–4. Elsevier, pp. 38–45, 2005. ista: Costantini G, Rastelli A, Manzano C, Acosta Diaz P, Katsaros G, Songmuang R, Schmidt O, Von Känel H, Kern K. 2005. Pyramids and domes in the InAs/GaAs (0 0 1) and Ge/Si (0 0 1) systems. Journal of Crystal Growth. 278(1–4), 38–45. mla: Costantini, Giovanni, et al. “Pyramids and Domes in the InAs/GaAs (0 0 1) and Ge/Si (0 0 1) Systems.” Journal of Crystal Growth, vol. 278, no. 1–4, Elsevier, 2005, pp. 38–45, doi:10.1016/j.jcrysgro.2004.12.047. short: G. Costantini, A. Rastelli, C. Manzano, P. Acosta Diaz, G. Katsaros, R. Songmuang, O. Schmidt, H. Von Känel, K. Kern, Journal of Crystal Growth 278 (2005) 38–45. date_created: 2018-12-11T11:53:45Z date_published: 2005-05-01T00:00:00Z date_updated: 2021-01-12T06:52:54Z day: '01' doi: 10.1016/j.jcrysgro.2004.12.047 extern: 1 intvolume: ' 278' issue: 1-4 month: '05' page: 38 - 45 publication: Journal of Crystal Growth publication_status: published publisher: Elsevier publist_id: '5384' quality_controlled: 0 status: public title: Pyramids and domes in the InAs/GaAs (0 0 1) and Ge/Si (0 0 1) systems type: journal_article volume: 278 year: '2005' ... --- _id: '1743' abstract: - lang: eng text: Laterally aligned multilayer GeSiSi islands grown on a patterned Si (001) substrate are disclosed by selective etching of Si in a KOH solution. This procedure allows us to visualize the vertical alignment of the islands in a three-dimensional perspective. Our technique reveals that partly coalesced double islands in the initial layer do not merge together, but instead gradually reproduce into well-separated double islands in upper layers. We attribute this effect to very thin spacer layers, which efficiently transfer the strain modulation of each island through the spacer layer to the surface. The etching rate of Si is reduced in tensile strained regions, which helps to preserve sufficient Si between the stacked islands to form a periodic array of freestanding and vertically modulated heterostructure pillars. acknowledgement: This work was supported by the BMBF (03N8711) and the EU NOE SANDiE author: - first_name: Zheyang full_name: Zhong, Zheyang last_name: Zhong - first_name: Georgios full_name: Georgios Katsaros id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros - first_name: Mathieu full_name: Stoffel, Mathieu last_name: Stoffel - first_name: Giovanni full_name: Costantini, Giovanni last_name: Costantini - first_name: Klaus full_name: Kern, Klaus last_name: Kern - first_name: Oliver full_name: Schmidt, Oliver G last_name: Schmidt - first_name: Neng full_name: Jin-Phillipp, Neng Y last_name: Jin Phillipp - first_name: Günther full_name: Bauer, Günther last_name: Bauer citation: ama: Zhong Z, Katsaros G, Stoffel M, et al. Periodic pillar structures by Si etching of multilayer GeSi/Si islands. Applied Physics Letters. 2005;87(26):1-3. doi:10.1063/1.2150278 apa: Zhong, Z., Katsaros, G., Stoffel, M., Costantini, G., Kern, K., Schmidt, O., … Bauer, G. (2005). Periodic pillar structures by Si etching of multilayer GeSi/Si islands. Applied Physics Letters. American Institute of Physics. https://doi.org/10.1063/1.2150278 chicago: Zhong, Zheyang, Georgios Katsaros, Mathieu Stoffel, Giovanni Costantini, Klaus Kern, Oliver Schmidt, Neng Jin Phillipp, and Günther Bauer. “Periodic Pillar Structures by Si Etching of Multilayer GeSi/Si Islands.” Applied Physics Letters. American Institute of Physics, 2005. https://doi.org/10.1063/1.2150278. ieee: Z. Zhong et al., “Periodic pillar structures by Si etching of multilayer GeSi/Si islands,” Applied Physics Letters, vol. 87, no. 26. American Institute of Physics, pp. 1–3, 2005. ista: Zhong Z, Katsaros G, Stoffel M, Costantini G, Kern K, Schmidt O, Jin Phillipp N, Bauer G. 2005. Periodic pillar structures by Si etching of multilayer GeSi/Si islands. Applied Physics Letters. 87(26), 1–3. mla: Zhong, Zheyang, et al. “Periodic Pillar Structures by Si Etching of Multilayer GeSi/Si Islands.” Applied Physics Letters, vol. 87, no. 26, American Institute of Physics, 2005, pp. 1–3, doi:10.1063/1.2150278. short: Z. Zhong, G. Katsaros, M. Stoffel, G. Costantini, K. Kern, O. Schmidt, N. Jin Phillipp, G. Bauer, Applied Physics Letters 87 (2005) 1–3. date_created: 2018-12-11T11:53:46Z date_published: 2005-01-01T00:00:00Z date_updated: 2021-01-12T06:52:55Z day: '01' doi: 10.1063/1.2150278 extern: 1 intvolume: ' 87' issue: '26' month: '01' page: 1 - 3 publication: Applied Physics Letters publication_status: published publisher: American Institute of Physics publist_id: '5381' quality_controlled: 0 status: public title: Periodic pillar structures by Si etching of multilayer GeSi/Si islands type: journal_article volume: 87 year: '2005' ... --- _id: '1744' abstract: - lang: eng text: This paper presents optical duobinary and dicode signalling, as alternatives to the binary format, in order to improve the transmission performance in the presense of non-linear effects in a dense wavelength division multiplex (WDM) optical system. Duobinary signalling is applied to an optical system to explore the reduction of stimulated Brillouin scattering (SBS) effects. Duobinary signalling suppresses the SBS effects, and an eye-opening improvement of 0.25 to 1.2 dB is achieved relative to binary transmission over a range of input power levels. An experimental study demonstrates that duobinary modulation suppresses the four wave mixing (FWM) products of a dense WDM system by a maximum of 3 dB. The suppression is maintained over a range of channel spacings. An investigation of the impact of fibre dispersion on FWM products under binary, duobinary and dicode modulation in a dense WDM system is then performed, with interchannel spacing and optical power variation. This leads to the development of a set of guidelines for the application areas, in which it is appropriate to use duobinary or dicode modulation in WDM systems as a means of mitigating the impact of FWM. acknowledgement: IET author: - first_name: Georgios full_name: Georgios Katsaros id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros - first_name: Izzat full_name: Darwazeh, Izzat Z last_name: Darwazeh - first_name: Phil full_name: Lane, Phil M last_name: Lane citation: ama: Katsaros G, Darwazeh I, Lane P. Non linear transmission effects in duobinary and dicode optical systems. IEE Proceedings - Optoelectronics. 2005;152(6):344-352. doi:10.1049/ip-opt:20045067 apa: Katsaros, G., Darwazeh, I., & Lane, P. (2005). Non linear transmission effects in duobinary and dicode optical systems. IEE Proceedings - Optoelectronics. Institute of Electrical Engineers. https://doi.org/10.1049/ip-opt:20045067 chicago: Katsaros, Georgios, Izzat Darwazeh, and Phil Lane. “Non Linear Transmission Effects in Duobinary and Dicode Optical Systems.” IEE Proceedings - Optoelectronics. Institute of Electrical Engineers, 2005. https://doi.org/10.1049/ip-opt:20045067. ieee: G. Katsaros, I. Darwazeh, and P. Lane, “Non linear transmission effects in duobinary and dicode optical systems,” IEE Proceedings - Optoelectronics, vol. 152, no. 6. Institute of Electrical Engineers, pp. 344–352, 2005. ista: Katsaros G, Darwazeh I, Lane P. 2005. Non linear transmission effects in duobinary and dicode optical systems. IEE Proceedings - Optoelectronics. 152(6), 344–352. mla: Katsaros, Georgios, et al. “Non Linear Transmission Effects in Duobinary and Dicode Optical Systems.” IEE Proceedings - Optoelectronics, vol. 152, no. 6, Institute of Electrical Engineers, 2005, pp. 344–52, doi:10.1049/ip-opt:20045067. short: G. Katsaros, I. Darwazeh, P. Lane, IEE Proceedings - Optoelectronics 152 (2005) 344–352. date_created: 2018-12-11T11:53:46Z date_published: 2005-12-01T00:00:00Z date_updated: 2021-01-12T06:52:55Z day: '01' doi: 10.1049/ip-opt:20045067 extern: 1 intvolume: ' 152' issue: '6' month: '12' page: 344 - 352 publication: IEE Proceedings - Optoelectronics publication_status: published publisher: Institute of Electrical Engineers publist_id: '5380' quality_controlled: 0 status: public title: Non linear transmission effects in duobinary and dicode optical systems type: journal_article volume: 152 year: '2005' ... --- _id: '1741' abstract: - lang: eng text: SiGe islands move laterally on a Si(001) substrate during in situ postgrowth annealing. This surprising behavior is revealed by an analysis of the substrate surface morphology after island removal using wet chemical etching. We explain the island motion by asymmetric surface-mediated alloying. Material leaves one side of the island by surface diffusion, and mixes with additional Si from the surrounding surface as it redeposits on the other side. Thus the island moves laterally while becoming larger and more dilute. acknowledgement: The work was supported by the BMBF (03N8711) author: - first_name: Ulrich full_name: Denker, Ulrich last_name: Denker - first_name: Armando full_name: Rastelli, Armando last_name: Rastelli - first_name: Mathieu full_name: Stoffel, Mathieu last_name: Stoffel - first_name: Jerry full_name: Tersoff, Jerry last_name: Tersoff - first_name: Georgios full_name: Georgios Katsaros id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros - first_name: Giovanni full_name: Costantini, Giovanni last_name: Costantini - first_name: Klaus full_name: Kern, Klaus last_name: Kern - first_name: Neng full_name: Jin-Phillipp, Neng Y last_name: Jin Phillipp - first_name: David full_name: Jesson, David E last_name: Jesson - first_name: Oliver full_name: Schmidt, Oliver G last_name: Schmidt citation: ama: Denker U, Rastelli A, Stoffel M, et al. Lateral motion of SiGe islands driven by surface-mediated alloying. Physical Review Letters. 2005;94(21). doi:10.1103/PhysRevLett.94.216103 apa: Denker, U., Rastelli, A., Stoffel, M., Tersoff, J., Katsaros, G., Costantini, G., … Schmidt, O. (2005). Lateral motion of SiGe islands driven by surface-mediated alloying. Physical Review Letters. American Physical Society. https://doi.org/10.1103/PhysRevLett.94.216103 chicago: Denker, Ulrich, Armando Rastelli, Mathieu Stoffel, Jerry Tersoff, Georgios Katsaros, Giovanni Costantini, Klaus Kern, Neng Jin Phillipp, David Jesson, and Oliver Schmidt. “Lateral Motion of SiGe Islands Driven by Surface-Mediated Alloying.” Physical Review Letters. American Physical Society, 2005. https://doi.org/10.1103/PhysRevLett.94.216103. ieee: U. Denker et al., “Lateral motion of SiGe islands driven by surface-mediated alloying,” Physical Review Letters, vol. 94, no. 21. American Physical Society, 2005. ista: Denker U, Rastelli A, Stoffel M, Tersoff J, Katsaros G, Costantini G, Kern K, Jin Phillipp N, Jesson D, Schmidt O. 2005. Lateral motion of SiGe islands driven by surface-mediated alloying. Physical Review Letters. 94(21). mla: Denker, Ulrich, et al. “Lateral Motion of SiGe Islands Driven by Surface-Mediated Alloying.” Physical Review Letters, vol. 94, no. 21, American Physical Society, 2005, doi:10.1103/PhysRevLett.94.216103. short: U. Denker, A. Rastelli, M. Stoffel, J. Tersoff, G. Katsaros, G. Costantini, K. Kern, N. Jin Phillipp, D. Jesson, O. Schmidt, Physical Review Letters 94 (2005). date_created: 2018-12-11T11:53:46Z date_published: 2005-06-03T00:00:00Z date_updated: 2021-01-12T06:52:54Z day: '03' doi: 10.1103/PhysRevLett.94.216103 extern: 1 intvolume: ' 94' issue: '21' month: '06' publication: Physical Review Letters publication_status: published publisher: American Physical Society publist_id: '5383' quality_controlled: 0 status: public title: Lateral motion of SiGe islands driven by surface-mediated alloying type: journal_article volume: 94 year: '2005' ... --- _id: '1795' abstract: - lang: eng text: 'Background: Murine leukemia virus (MLV) vector particles can be pseudotyped with a truncated variant of the human immunodeficiency virus type 1 (HIV-1) envelope protein (Env) and selectively target gene transfer to human cells expressing both CD4 and an appropriate co-receptor. Vector transduction mimics the HIV-1 entry process and is therefore a safe tool to study HIV-1 entry. Results: Using FLY cells, which express the MLV gag and pol genes, we generated stable producer cell lines that express the HIV-1 envelope gene and a retroviral vector genome encoding the green fluorescent protein (GFP). The BH10 or 89.6 P HIV-1 Env was expressed from a bicistronic vector which allowed the rapid selection of stable cell lines. A codon-usage-optimized synthetic env gene permitted high, Rev-independent Env expression. Vectors generated by these producer cells displayed different sensitivity to entry inhibitors. Conclusion: These data illustrate that MLV/HIV-1 vectors are a valuable screening system for entry inhibitors or neutralizing antisera generated by vaccines.' author: - first_name: Sandra full_name: Sandra Siegert id: 36ACD32E-F248-11E8-B48F-1D18A9856A87 last_name: Siegert orcid: 0000-0001-8635-0877 - first_name: Sonja full_name: Thaler, Sonja last_name: Thaler - first_name: Ralf full_name: Wagner, Ralf last_name: Wagner - first_name: Barbara full_name: Schnierle, Barbara S last_name: Schnierle citation: ama: Siegert S, Thaler S, Wagner R, Schnierle B. Assessment of HIV-1 entry inhibitors by MLV/HIV-1 pseudotyped vectors. AIDS Research and Therapy. 2005;2(1). doi:10.1186/1742-6405-2-7 apa: Siegert, S., Thaler, S., Wagner, R., & Schnierle, B. (2005). Assessment of HIV-1 entry inhibitors by MLV/HIV-1 pseudotyped vectors. AIDS Research and Therapy. BioMed Central. https://doi.org/10.1186/1742-6405-2-7 chicago: Siegert, Sandra, Sonja Thaler, Ralf Wagner, and Barbara Schnierle. “Assessment of HIV-1 Entry Inhibitors by MLV/HIV-1 Pseudotyped Vectors.” AIDS Research and Therapy. BioMed Central, 2005. https://doi.org/10.1186/1742-6405-2-7. ieee: S. Siegert, S. Thaler, R. Wagner, and B. Schnierle, “Assessment of HIV-1 entry inhibitors by MLV/HIV-1 pseudotyped vectors,” AIDS Research and Therapy, vol. 2, no. 1. BioMed Central, 2005. ista: Siegert S, Thaler S, Wagner R, Schnierle B. 2005. Assessment of HIV-1 entry inhibitors by MLV/HIV-1 pseudotyped vectors. AIDS Research and Therapy. 2(1). mla: Siegert, Sandra, et al. “Assessment of HIV-1 Entry Inhibitors by MLV/HIV-1 Pseudotyped Vectors.” AIDS Research and Therapy, vol. 2, no. 1, BioMed Central, 2005, doi:10.1186/1742-6405-2-7. short: S. Siegert, S. Thaler, R. Wagner, B. Schnierle, AIDS Research and Therapy 2 (2005). date_created: 2018-12-11T11:54:03Z date_published: 2005-09-12T00:00:00Z date_updated: 2021-01-12T06:53:15Z day: '12' doi: 10.1186/1742-6405-2-7 extern: 1 intvolume: ' 2' issue: '1' month: '09' publication: AIDS Research and Therapy publication_status: published publisher: BioMed Central publist_id: '5315' quality_controlled: 0 status: public title: Assessment of HIV-1 entry inhibitors by MLV/HIV-1 pseudotyped vectors type: journal_article volume: 2 year: '2005' ...