@article{13092, abstract = {There is a need for the development of lead-free thermoelectric materials for medium-/high-temperature applications. Here, we report a thiol-free tin telluride (SnTe) precursor that can be thermally decomposed to produce SnTe crystals with sizes ranging from tens to several hundreds of nanometers. We further engineer SnTe–Cu2SnTe3 nanocomposites with a homogeneous phase distribution by decomposing the liquid SnTe precursor containing a dispersion of Cu1.5Te colloidal nanoparticles. The presence of Cu within the SnTe and the segregated semimetallic Cu2SnTe3 phase effectively improves the electrical conductivity of SnTe while simultaneously reducing the lattice thermal conductivity without compromising the Seebeck coefficient. Overall, power factors up to 3.63 mW m–1 K–2 and thermoelectric figures of merit up to 1.04 are obtained at 823 K, which represent a 167% enhancement compared with pristine SnTe.}, author = {Nan, Bingfei and Song, Xuan and Chang, Cheng and Xiao, Ke and Zhang, Yu and Yang, Linlin and Horta, Sharona and Li, Junshan and Lim, Khak Ho and Ibáñez, Maria and Cabot, Andreu}, issn = {1944-8252}, journal = {ACS Applied Materials and Interfaces}, number = {19}, pages = {23380–23389}, publisher = {American Chemical Society}, title = {{Bottom-up synthesis of SnTe-based thermoelectric composites}}, doi = {10.1021/acsami.3c00625}, volume = {15}, year = {2023}, } @article{13093, abstract = {The direct, solid state, and reversible conversion between heat and electricity using thermoelectric devices finds numerous potential uses, especially around room temperature. However, the relatively high material processing cost limits their real applications. Silver selenide (Ag2Se) is one of the very few n-type thermoelectric (TE) materials for room-temperature applications. Herein, we report a room temperature, fast, and aqueous-phase synthesis approach to produce Ag2Se, which can be extended to other metal chalcogenides. These materials reach TE figures of merit (zT) of up to 0.76 at 380 K. To improve these values, bismuth sulfide (Bi2S3) particles also prepared in an aqueous solution are incorporated into the Ag2Se matrix. In this way, a series of Ag2Se/Bi2S3 composites with Bi2S3 wt % of 0.5, 1.0, and 1.5 are prepared by solution blending and hot-press sintering. The presence of Bi2S3 significantly improves the Seebeck coefficient and power factor while at the same time decreasing the thermal conductivity with no apparent drop in electrical conductivity. Thus, a maximum zT value of 0.96 is achieved in the composites with 1.0 wt % Bi2S3 at 370 K. Furthermore, a high average zT value (zTave) of 0.93 in the 300–390 K range is demonstrated.}, author = {Nan, Bingfei and Li, Mengyao and Zhang, Yu and Xiao, Ke and Lim, Khak Ho and Chang, Cheng and Han, Xu and Zuo, Yong and Li, Junshan and Arbiol, Jordi and Llorca, Jordi and Ibáñez, Maria and Cabot, Andreu}, issn = {2637-6113}, journal = {ACS Applied Electronic Materials}, publisher = {American Chemical Society}, title = {{Engineering of thermoelectric composites based on silver selenide in aqueous solution and ambient temperature}}, doi = {10.1021/acsaelm.3c00055}, year = {2023}, } @article{12331, abstract = {High carrier mobility is critical to improving thermoelectric performance over a broad temperature range. However, traditional doping inevitably deteriorates carrier mobility. Herein, we develop a strategy for fine tuning of defects to improve carrier mobility. To begin, n-type PbTe is created by compensating for the intrinsic Pb vacancy in bare PbTe. Excess Pb2+ reduces vacancy scattering, resulting in a high carrier mobility of ∼3400 cm2 V–1 s–1. Then, excess Ag is introduced to compensate for the remaining intrinsic Pb vacancies. We find that excess Ag exhibits a dynamic doping process with increasing temperatures, increasing both the carrier concentration and carrier mobility throughout a wide temperature range; specifically, an ultrahigh carrier mobility ∼7300 cm2 V–1 s–1 is obtained for Pb1.01Te + 0.002Ag at 300 K. Moreover, the dynamic doping-induced high carrier concentration suppresses the bipolar thermal conductivity at high temperatures. The final step is using iodine to optimize the carrier concentration to ∼1019 cm–3. Ultimately, a maximum ZT value of ∼1.5 and a large average ZTave value of ∼1.0 at 300–773 K are obtained for Pb1.01Te0.998I0.002 + 0.002Ag. These findings demonstrate that fine tuning of defects with <0.5% impurities can remarkably enhance carrier mobility and improve thermoelectric performance.}, author = {Wang, Siqi and Chang, Cheng and Bai, Shulin and Qin, Bingchao and Zhu, Yingcai and Zhan, Shaoping and Zheng, Junqing and Tang, Shuwei and Zhao, Li Dong}, issn = {1520-5002}, journal = {Chemistry of Materials}, number = {2}, pages = {755--763}, publisher = {American Chemical Society}, title = {{Fine tuning of defects enables high carrier mobility and enhanced thermoelectric performance of n-type PbTe}}, doi = {10.1021/acs.chemmater.2c03542}, volume = {35}, year = {2023}, } @article{14985, abstract = {Lead sulfide (PbS) presents large potential in thermoelectric application due to its earth-abundant S element. However, its inferior average ZT (ZTave) value makes PbS less competitive with its analogs PbTe and PbSe. To promote its thermoelectric performance, this study implements strategies of continuous Se alloying and Cu interstitial doping to synergistically tune thermal and electrical transport properties in n-type PbS. First, the lattice parameter of 5.93 Å in PbS is linearly expanded to 6.03 Å in PbS0.5Se0.5 with increasing Se alloying content. This expanded lattice in Se-alloyed PbS not only intensifies phonon scattering but also facilitates the formation of Cu interstitials. Based on the PbS0.6Se0.4 content with the minimal lattice thermal conductivity, Cu interstitials are introduced to improve the electron density, thus boosting the peak power factor, from 3.88 μW cm−1 K−2 in PbS0.6Se0.4 to 20.58 μW cm−1 K−2 in PbS0.6Se0.4−1%Cu. Meanwhile, the lattice thermal conductivity in PbS0.6Se0.4−x%Cu (x = 0–2) is further suppressed due to the strong strain field caused by Cu interstitials. Finally, with the lowered thermal conductivity and high electrical transport properties, a peak ZT ~1.1 and ZTave ~0.82 can be achieved in PbS0.6Se0.4 − 1%Cu at 300–773K, which outperforms previously reported n-type PbS.}, author = {Liu, Zhengtao and Hong, Tao and Xu, Liqing and Wang, Sining and Gao, Xiang and Chang, Cheng and Ding, Xiangdong and Xiao, Yu and Zhao, Li‐Dong}, issn = {2767-441X}, journal = {Interdisciplinary Materials}, number = {1}, pages = {161--170}, publisher = {Wiley}, title = {{Lattice expansion enables interstitial doping to achieve a high average ZT in n‐type PbS}}, doi = {10.1002/idm2.12056}, volume = {2}, year = {2023}, } @article{10042, abstract = {SnSe has emerged as one of the most promising materials for thermoelectric energy conversion due to its extraordinary performance in its single-crystal form and its low-cost constituent elements. However, to achieve an economic impact, the polycrystalline counterpart needs to replicate the performance of the single crystal. Herein, we optimize the thermoelectric performance of polycrystalline SnSe produced by consolidating solution-processed and surface-engineered SnSe particles. In particular, the SnSe particles are coated with CdSe molecular complexes that crystallize during the sintering process, forming CdSe nanoparticles. The presence of CdSe nanoparticles inhibits SnSe grain growth during the consolidation step due to Zener pinning, yielding a material with a high density of grain boundaries. Moreover, the resulting SnSe–CdSe nanocomposites present a large number of defects at different length scales, which significantly reduce the thermal conductivity. The produced SnSe–CdSe nanocomposites exhibit thermoelectric figures of merit up to 2.2 at 786 K, which is among the highest reported for solution-processed SnSe.}, author = {Liu, Yu and Calcabrini, Mariano and Yu, Yuan and Lee, Seungho and Chang, Cheng and David, Jérémy and Ghosh, Tanmoy and Spadaro, Maria Chiara and Xie, Chenyang and Cojocaru-Mirédin, Oana and Arbiol, Jordi and Ibáñez, Maria}, issn = {1936-086X}, journal = {ACS Nano}, keywords = {tin selenide, nanocomposite, grain growth, Zener pinning, thermoelectricity, annealing, solution processing}, number = {1}, pages = {78--88}, publisher = {American Chemical Society }, title = {{Defect engineering in solution-processed polycrystalline SnSe leads to high thermoelectric performance}}, doi = {10.1021/acsnano.1c06720}, volume = {16}, year = {2022}, } @article{11142, abstract = {SnTe is a promising Pb-free thermoelectric (TE) material with high electrical conductivity. We discovered the synergistic effect of Bi2O3 on enhancing the average power factor (PF) and overall ZT value of the SnTe-based thermoelectric material. The introduction of Bi2O3 forms plenty of SnO2, Bi2O3, and Bi-rich nanoprecipitates. These interfaces between the SnTe matrix and the nanoprecipitates can enhance the average PF through the energy filtering effect. On the other hand, abundant and diverse nanoprecipitates can significantly diminish the lattice thermal conductivity (κlat) through enhanced phonon scattering. The synergistic effect of Bi2O3 resulted in a maximum ZT (ZTmax) value of 0.9 at SnTe-2% Bi2O3 and an average ZT (ZTave) value of 0.4 for SnTe-4% Bi2O3 from 300 K to 823 K. The work provides an excellent reference to develop non-toxic high-performance TE materials.}, author = {Hong, Tao and Guo, Changrong and Wang, Dongyang and Qin, Bingchao and Chang, Cheng and Gao, Xiang and Zhao, Li Dong}, issn = {2468-6069}, journal = {Materials Today Energy}, publisher = {Elsevier}, title = {{Enhanced thermoelectric performance in SnTe due to the energy filtering effect introduced by Bi2O3}}, doi = {10.1016/j.mtener.2022.100985}, volume = {25}, year = {2022}, } @article{11356, author = {Chang, Cheng and Qin, Bingchao and Su, Lizhong and Zhao, Li Dong}, issn = {2095-9281}, journal = {Science Bulletin}, number = {11}, pages = {1105--1107}, publisher = {Elsevier}, title = {{Distinct electron and hole transports in SnSe crystals}}, doi = {10.1016/j.scib.2022.04.007}, volume = {67}, year = {2022}, } @article{11401, abstract = {Tin selenide (SnSe) is considered a robust candidate for thermoelectric applications due to its very high thermoelectric figure of merit, ZT, with values of 2.6 in p-type and 2.8 in n-type single crystals. Sn has been replaced with various lower group dopants to achieve successful p-type doping in SnSe with high ZT values. A known, facile, and powerful alternative way to introduce a hole carrier is to use a natural single Sn vacancy, VSn. Through transport and scanning tunneling microscopy studies, we discovered that VSn are dominant in high-quality (slow cooling rate) SnSe single crystals, while multiple vacancies, Vmulti, are dominant in low-quality (high cooling rate) single crystals. Surprisingly, both VSn and Vmulti help to increase the power factors of SnSe, whereas samples with dominant VSn have superior thermoelectric properties in SnSe single crystals. Additionally, the observation that Vmulti are good p-type sources observed in relatively low-quality single crystals is useful in thermoelectric applications because polycrystalline SnSe can be used due to its mechanical strength; this substance is usually fabricated at very high cooling speeds.}, author = {Nguyen, Van Quang and Trinh, Thi Ly and Chang, Cheng and Zhao, Li Dong and Nguyen, Thi Huong and Duong, Van Thiet and Duong, Anh Tuan and Park, Jong Ho and Park, Sudong and Kim, Jungdae and Cho, Sunglae}, issn = {1884-4057}, journal = {NPG Asia Materials}, publisher = {Springer Nature}, title = {{Unidentified major p-type source in SnSe: Multivacancies}}, doi = {10.1038/s41427-022-00393-5}, volume = {14}, year = {2022}, } @article{11705, abstract = {The broad implementation of thermoelectricity requires high-performance and low-cost materials. One possibility is employing surfactant-free solution synthesis to produce nanopowders. We propose the strategy of functionalizing “naked” particles’ surface by inorganic molecules to control the nanostructure and, consequently, thermoelectric performance. In particular, we use bismuth thiolates to functionalize surfactant-free SnTe particles’ surfaces. Upon thermal processing, bismuth thiolates decomposition renders SnTe-Bi2S3 nanocomposites with synergistic functions: 1) carrier concentration optimization by Bi doping; 2) Seebeck coefficient enhancement and bipolar effect suppression by energy filtering; and 3) lattice thermal conductivity reduction by small grain domains, grain boundaries and nanostructuration. Overall, the SnTe-Bi2S3 nanocomposites exhibit peak z T up to 1.3 at 873 K and an average z T of ≈0.6 at 300–873 K, which is among the highest reported for solution-processed SnTe.}, author = {Chang, Cheng and Liu, Yu and Lee, Seungho and Spadaro, Maria and Koskela, Kristopher M. and Kleinhanns, Tobias and Costanzo, Tommaso and Arbiol, Jordi and Brutchey, Richard L. and Ibáñez, Maria}, issn = {1521-3773}, journal = {Angewandte Chemie - International Edition}, number = {35}, publisher = {Wiley}, title = {{Surface functionalization of surfactant-free particles: A strategy to tailor the properties of nanocomposites for enhanced thermoelectric performance}}, doi = {10.1002/anie.202207002}, volume = {61}, year = {2022}, } @article{10566, abstract = {A versatile, scalable, room temperature and surfactant-free route for the synthesis of metal chalcogenide nanoparticles in aqueous solution is detailed here for the production of PbS and Cu-doped PbS nanoparticles. Subsequently, nanoparticles are annealed in a reducing atmosphere to remove surface oxide, and consolidated into dense polycrystalline materials by means of spark plasma sintering. By characterizing the transport properties of the sintered material, we observe the annealing step and the incorporation of Cu to play a key role in promoting the thermoelectric performance of PbS. The presence of Cu allows improving the electrical conductivity by increasing the charge carrier concentration and simultaneously maintaining a large charge carrier mobility, which overall translates into record power factors at ambient temperature, 2.3 mWm-1K−2. Simultaneously, the lattice thermal conductivity decreases with the introduction of Cu, leading to a record high ZT = 0.37 at room temperature and ZT = 1.22 at 773 K. Besides, a record average ZTave = 0.76 is demonstrated in the temperature range 320–773 K for n-type Pb0.955Cu0.045S.}, author = {Li, Mengyao and Liu, Yu and Zhang, Yu and Chang, Cheng and Zhang, Ting and Yang, Dawei and Xiao, Ke and Arbiol, Jordi and Ibáñez, Maria and Cabot, Andreu}, issn = {1385-8947}, journal = {Chemical Engineering Journal}, publisher = {Elsevier}, title = {{Room temperature aqueous-based synthesis of copper-doped lead sulfide nanoparticles for thermoelectric application}}, doi = {10.1016/j.cej.2021.133837}, volume = {433}, year = {2022}, } @article{11144, abstract = {Thermoelectric materials allow for direct conversion between heat and electricity, offering the potential for power generation. The average dimensionless figure of merit ZTave determines device efficiency. N-type tin selenide crystals exhibit outstanding three-dimensional charge and two-dimensional phonon transport along the out-of-plane direction, contributing to a high maximum figure of merit Zmax of ~3.6 × 10−3 per kelvin but a moderate ZTave of ~1.1. We found an attractive high Zmax of ~4.1 × 10−3 per kelvin at 748 kelvin and a ZTave of ~1.7 at 300 to 773 kelvin in chlorine-doped and lead-alloyed tin selenide crystals by phonon-electron decoupling. The chlorine-induced low deformation potential improved the carrier mobility. The lead-induced mass and strain fluctuations reduced the lattice thermal conductivity. Phonon-electron decoupling plays a critical role to achieve high-performance thermoelectrics.}, author = {Su, Lizhong and Wang, Dongyang and Wang, Sining and Qin, Bingchao and Wang, Yuping and Qin, Yongxin and Jin, Yang and Chang, Cheng and Zhao, Li Dong}, issn = {1095-9203}, journal = {Science}, number = {6587}, pages = {1385--1389}, publisher = {American Association for the Advancement of Science}, title = {{High thermoelectric performance realized through manipulating layered phonon-electron decoupling}}, doi = {10.1126/science.abn8997}, volume = {375}, year = {2022}, } @article{12155, abstract = {The growing demand of thermal management in various fields such as miniaturized 5G chips has motivated researchers to develop new and high-performance solid-state refrigeration technologies, typically including multicaloric and thermoelectric (TE) cooling. Among them, TE cooling has attracted huge attention owing to its advantages of rapid response, large cooling temperature difference, high stability, and tunable device size. Bi2Te3-based alloys have long been the only commercialized TE cooling materials, while novel systems SnSe and Mg3(Bi,Sb)2 have recently been discovered as potential candidates. However, challenges and problems still require to be summarized and further resolved for realizing better cooling performance. In this review, we systematically investigate TE cooling from its internal mechanism, crucial parameters, to device design and applications. Furthermore, we summarize the current optimization strategies for existing TE cooling materials, and finally provide some personal prospects especially the material-planification concept on future research on establishing better TE cooling.}, author = {Qin, Yongxin and Qin, Bingchao and Wang, Dongyang and Chang, Cheng and Zhao, Li-Dong}, issn = {1754-5706}, journal = {Energy & Environmental Science}, keywords = {Pollution, Nuclear Energy and Engineering, Renewable Energy, Sustainability and the Environment, Environmental Chemistry}, number = {11}, pages = {4527--4541}, publisher = {Royal Society of Chemistry}, title = {{Solid-state cooling: Thermoelectrics}}, doi = {10.1039/d2ee02408j}, volume = {15}, year = {2022}, } @article{9626, abstract = {SnSe, a wide-bandgap semiconductor, has attracted significant attention from the thermoelectric (TE) community due to its outstanding TE performance deriving from the ultralow thermal conductivity and advantageous electronic structures. Here, we promoted the TE performance of n-type SnSe polycrystals through bandgap engineering and vacancy compensation. We found that PbTe can significantly reduce the wide bandgap of SnSe to reduce the impurity transition energy, largely enhancing the carrier concentration. Also, PbTe-induced crystal symmetry promotion increases the carrier mobility, preserving large Seebeck coefficient. Consequently, a maximum ZT of ∼1.4 at 793 K is obtained in Br doped SnSe–13%PbTe. Furthermore, we found that extra Sn in n-type SnSe can compensate for the intrinsic Sn vacancies and form electron donor-like metallic Sn nanophases. The Sn nanophases near the grain boundary could also reduce the intergrain energy barrier which largely enhances the carrier mobility. As a result, a maximum ZT value of ∼1.7 at 793 K and an average ZT (ZTave) of ∼0.58 in 300–793 K are achieved in Br doped Sn1.08Se–13%PbTe. Our findings provide a novel strategy to promote the TE performance in wide-bandgap semiconductors.}, author = {Su, Lizhong and Hong, Tao and Wang, Dongyang and Wang, Sining and Qin, Bingchao and Zhang, Mengmeng and Gao, Xiang and Chang, Cheng and Zhao, Li Dong}, issn = {2542-5293}, journal = {Materials Today Physics}, publisher = {Elsevier}, title = {{Realizing high doping efficiency and thermoelectric performance in n-type SnSe polycrystals via bandgap engineering and vacancy compensation}}, doi = {10.1016/j.mtphys.2021.100452}, volume = {20}, year = {2021}, } @article{10123, abstract = {Solution synthesis of particles emerged as an alternative to prepare thermoelectric materials with less demanding processing conditions than conventional solid-state synthetic methods. However, solution synthesis generally involves the presence of additional molecules or ions belonging to the precursors or added to enable solubility and/or regulate nucleation and growth. These molecules or ions can end up in the particles as surface adsorbates and interfere in the material properties. This work demonstrates that ionic adsorbates, in particular Na⁺ ions, are electrostatically adsorbed in SnSe particles synthesized in water and play a crucial role not only in directing the material nano/microstructure but also in determining the transport properties of the consolidated material. In dense pellets prepared by sintering SnSe particles, Na remains within the crystal lattice as dopant, in dislocations, precipitates, and forming grain boundary complexions. These results highlight the importance of considering all the possible unintentional impurities to establish proper structure-property relationships and control material properties in solution-processed thermoelectric materials.}, author = {Liu, Yu and Calcabrini, Mariano and Yu, Yuan and Genç, Aziz and Chang, Cheng and Costanzo, Tommaso and Kleinhanns, Tobias and Lee, Seungho and Llorca, Jordi and Cojocaru‐Mirédin, Oana and Ibáñez, Maria}, issn = {1521-4095}, journal = {Advanced Materials}, keywords = {mechanical engineering, mechanics of materials, general materials science}, number = {52}, publisher = {Wiley}, title = {{The importance of surface adsorbates in solution‐processed thermoelectric materials: The case of SnSe}}, doi = {10.1002/adma.202106858}, volume = {33}, year = {2021}, } @article{10073, abstract = {Thermoelectric materials enable the direct conversion between heat and electricity. SnTe is a promising candidate due to its high charge transport performance. Here, we prepared SnTe nanocomposites by employing an aqueous method to synthetize SnTe nanoparticles (NP), followed by a unique surface treatment prior NP consolidation. This synthetic approach allowed optimizing the charge and phonon transport synergistically. The novelty of this strategy was the use of a soluble PbS molecular complex prepared using a thiol-amine solvent mixture that upon blending is adsorbed on the SnTe NP surface. Upon consolidation with spark plasma sintering, SnTe-PbS nanocomposite is formed. The presence of PbS complexes significantly compensates for the Sn vacancy and increases the average grain size of the nanocomposite, thus improving the carrier mobility. Moreover, lattice thermal conductivity is also reduced by the Pb and S-induced mass and strain fluctuation. As a result, an enhanced ZT of ca. 0.8 is reached at 873 K. Our finding provides a novel strategy to conduct rational surface treatment on NP-based thermoelectrics.}, author = {Chang, Cheng and Ibáñez, Maria}, issn = {1996-1944}, journal = {Materials}, number = {18}, publisher = {MDPI}, title = {{Enhanced thermoelectric performance by surface engineering in SnTe-PbS nanocomposites}}, doi = {10.3390/ma14185416}, volume = {14}, year = {2021}, } @article{14800, abstract = {Research on two-dimensional (2D) materials has been explosively increasing in last seventeen years in varying subjects including condensed matter physics, electronic engineering, materials science, and chemistry since the mechanical exfoliation of graphene in 2004. Starting from graphene, 2D materials now have become a big family with numerous members and diverse categories. The unique structural features and physicochemical properties of 2D materials make them one class of the most appealing candidates for a wide range of potential applications. In particular, we have seen some major breakthroughs made in the field of 2D materials in last five years not only in developing novel synthetic methods and exploring new structures/properties but also in identifying innovative applications and pushing forward commercialisation. In this review, we provide a critical summary on the recent progress made in the field of 2D materials with a particular focus on last five years. After a brief background introduction, we first discuss the major synthetic methods for 2D materials, including the mechanical exfoliation, liquid exfoliation, vapor phase deposition, and wet-chemical synthesis as well as phase engineering of 2D materials belonging to the field of phase engineering of nanomaterials (PEN). We then introduce the superconducting/optical/magnetic properties and chirality of 2D materials along with newly emerging magic angle 2D superlattices. Following that, the promising applications of 2D materials in electronics, optoelectronics, catalysis, energy storage, solar cells, biomedicine, sensors, environments, etc. are described sequentially. Thereafter, we present the theoretic calculations and simulations of 2D materials. Finally, after concluding the current progress, we provide some personal discussions on the existing challenges and future outlooks in this rapidly developing field. }, author = {Chang, Cheng and Chen, Wei and Chen, Ye and Chen, Yonghua and Chen, Yu and Ding, Feng and Fan, Chunhai and Fan, Hong Jin and Fan, Zhanxi and Gong, Cheng and Gong, Yongji and He, Qiyuan and Hong, Xun and Hu, Sheng and Hu, Weida and Huang, Wei and Huang, Yuan and Ji, Wei and Li, Dehui and Li, Lain Jong and Li, Qiang and Lin, Li and Ling, Chongyi and Liu, Minghua and Liu, Nan and Liu, Zhuang and Loh, Kian Ping and Ma, Jianmin and Miao, Feng and Peng, Hailin and Shao, Mingfei and Song, Li and Su, Shao and Sun, Shuo and Tan, Chaoliang and Tang, Zhiyong and Wang, Dingsheng and Wang, Huan and Wang, Jinlan and Wang, Xin and Wang, Xinran and Wee, Andrew T.S. and Wei, Zhongming and Wu, Yuen and Wu, Zhong Shuai and Xiong, Jie and Xiong, Qihua and Xu, Weigao and Yin, Peng and Zeng, Haibo and Zeng, Zhiyuan and Zhai, Tianyou and Zhang, Han and Zhang, Hui and Zhang, Qichun and Zhang, Tierui and Zhang, Xiang and Zhao, Li Dong and Zhao, Meiting and Zhao, Weijie and Zhao, Yunxuan and Zhou, Kai Ge and Zhou, Xing and Zhou, Yu and Zhu, Hongwei and Zhang, Hua and Liu, Zhongfan}, issn = {1001-4861}, journal = {Acta Physico-Chimica Sinica}, number = {12}, publisher = {Peking University}, title = {{Recent progress on two-dimensional materials}}, doi = {10.3866/PKU.WHXB202108017}, volume = {37}, year = {2021}, }