TY - JOUR AB - The spin-orbit interaction permits to control the state of a spin qubit via electric fields. For holes it is particularly strong, allowing for fast all electrical qubit manipulation, and yet an in-depth understanding of this interaction in hole systems is missing. Here we investigate, experimentally and theoretically, the effect of the cubic Rashba spin-orbit interaction on the mixing of the spin states by studying singlet-triplet oscillations in a planar Ge hole double quantum dot. Landau-Zener sweeps at different magnetic field directions allow us to disentangle the effects of the spin-orbit induced spin-flip term from those caused by strongly site-dependent and anisotropic quantum dot g tensors. Our work, therefore, provides new insights into the hole spin-orbit interaction, necessary for optimizing future qubit experiments. AU - Jirovec, Daniel AU - Mutter, Philipp M. AU - Hofmann, Andrea C AU - Crippa, Alessandro AU - Rychetsky, Marek AU - Craig, David L. AU - Kukucka, Josip AU - Martins, Frederico AU - Ballabio, Andrea AU - Ares, Natalia AU - Chrastina, Daniel AU - Isella, Giovanni AU - Burkard, Guido AU - Katsaros, Georgios ID - 10920 IS - 12 JF - Physical Review Letters TI - Dynamics of hole singlet-triplet qubits with large g-factor differences VL - 128 ER - TY - CONF AB - We firstly introduce the self-assembled growth of highly uniform Ge quantum wires with controllable position, distance and length on patterned Si (001) substrates. We then present the electrically tunable strong spin-orbit coupling, the first Ge hole spin qubit and ultrafast operation of hole spin qubit in the Ge/Si quantum wires. AU - Gao, Fei AU - Zhang, Jie Yin AU - Wang, Jian Huan AU - Ming, Ming AU - Wang, Tina AU - Zhang, Jian Jun AU - Watzinger, Hannes AU - Kukucka, Josip AU - Vukušić, Lada AU - Katsaros, Georgios AU - Wang, Ke AU - Xu, Gang AU - Li, Hai Ou AU - Guo, Guo Ping ID - 9464 SN - 9781728181769 T2 - 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021 TI - Ge/Si quantum wires for quantum computing ER - TY - JOUR AB - Spin qubits are considered to be among the most promising candidates for building a quantum processor. Group IV hole spin qubits have moved into the focus of interest due to the ease of operation and compatibility with Si technology. In addition, Ge offers the option for monolithic superconductor-semiconductor integration. Here we demonstrate a hole spin qubit operating at fields below 10 mT, the critical field of Al, by exploiting the large out-of-plane hole g-factors in planar Ge and by encoding the qubit into the singlet-triplet states of a double quantum dot. We observe electrically controlled X and Z-rotations with tunable frequencies exceeding 100 MHz and dephasing times of 1μs which we extend beyond 15μs with echo techniques. These results show that Ge hole singlet triplet qubits outperform their electronic Si and GaAs based counterparts in speed and coherence, respectively. In addition, they are on par with Ge single spin qubits, but can be operated at much lower fields underlining their potential for on chip integration with superconducting technologies. AU - Jirovec, Daniel AU - Hofmann, Andrea C AU - Ballabio, Andrea AU - Mutter, Philipp M. AU - Tavani, Giulio AU - Botifoll, Marc AU - Crippa, Alessandro AU - Kukucka, Josip AU - Sagi, Oliver AU - Martins, Frederico AU - Saez Mollejo, Jaime AU - Prieto Gonzalez, Ivan AU - Borovkov, Maksim AU - Arbiol, Jordi AU - Chrastina, Daniel AU - Isella, Giovanni AU - Katsaros, Georgios ID - 8909 IS - 8 JF - Nature Materials SN - 1476-1122 TI - A singlet triplet hole spin qubit in planar Ge VL - 20 ER - TY - THES AB - Quantum computation enables the execution of algorithms that have exponential complexity. This might open the path towards the synthesis of new materials or medical drugs, optimization of transport or financial strategies etc., intractable on even the fastest classical computers. A quantum computer consists of interconnected two level quantum systems, called qubits, that satisfy DiVincezo’s criteria. Worldwide, there are ongoing efforts to find the qubit architecture which will unite quantum error correction compatible single and two qubit fidelities, long distance qubit to qubit coupling and calability. Superconducting qubits have gone the furthest in this race, demonstrating an algorithm running on 53 coupled qubits, but still the fidelities are not even close to those required for realizing a single logical qubit. emiconductor qubits offer extremely good characteristics, but they are currently investigated across different platforms. Uniting those good characteristics into a single platform might be a big step towards the quantum computer realization. Here we describe the implementation of a hole spin qubit hosted in a Ge hut wire double quantum dot. The high and tunable spin-orbit coupling together with a heavy hole state character is expected to allow fast spin manipulation and long coherence times. Furthermore large lever arms, for hut wire devices, should allow good coupling to superconducting resonators enabling efficient long distance spin to spin coupling and a sensitive gate reflectometry spin readout. The developed cryogenic setup (printed circuit board sample holders, filtering, high-frequency wiring) enabled us to perform low temperature spin dynamics experiments. Indeed, we measured the fastest single spin qubit Rabi frequencies reported so far, reaching 140 MHz, while the dephasing times of 130 ns oppose the long decoherence predictions. In order to further investigate this, a double quantum dot gate was connected directly to a lumped element resonator which enabled gate reflectometry readout. The vanishing inter-dot transition signal, for increasing external magnetic field, revealed the spin nature of the measured quantity. AU - Kukucka, Josip ID - 7996 SN - 2663-337X TI - Implementation of a hole spin qubit in Ge hut wires and dispersive spin sensing ER - TY - JOUR AB - Semiconductor nanowires have been playing a crucial role in the development of nanoscale devices for the realization of spin qubits, Majorana fermions, single photon emitters, nanoprocessors, etc. The monolithic growth of site‐controlled nanowires is a prerequisite toward the next generation of devices that will require addressability and scalability. Here, combining top‐down nanofabrication and bottom‐up self‐assembly, the growth of Ge wires on prepatterned Si (001) substrates with controllable position, distance, length, and structure is reported. This is achieved by a novel growth process that uses a SiGe strain‐relaxation template and can be potentially generalized to other material combinations. Transport measurements show an electrically tunable spin–orbit coupling, with a spin–orbit length similar to that of III–V materials. Also, charge sensing between quantum dots in closely spaced wires is observed, which underlines their potential for the realization of advanced quantum devices. The reported results open a path toward scalable qubit devices using nanowires on silicon. AU - Gao, Fei AU - Wang, Jian-Huan AU - Watzinger, Hannes AU - Hu, Hao AU - Rančić, Marko J. AU - Zhang, Jie-Yin AU - Wang, Ting AU - Yao, Yuan AU - Wang, Gui-Lei AU - Kukucka, Josip AU - Vukušić, Lada AU - Kloeffel, Christoph AU - Loss, Daniel AU - Liu, Feng AU - Katsaros, Georgios AU - Zhang, Jian-Jun ID - 7541 IS - 16 JF - Advanced Materials SN - 0935-9648 TI - Site-controlled uniform Ge/Si hut wires with electrically tunable spin-orbit coupling VL - 32 ER - TY - JOUR AB - Using inelastic cotunneling spectroscopy we observe a zero field splitting within the spin triplet manifold of Ge hut wire quantum dots. The states with spin ±1 in the confinement direction are energetically favored by up to 55 μeV compared to the spin 0 triplet state because of the strong spin–orbit coupling. The reported effect should be observable in a broad class of strongly confined hole quantum-dot systems and might need to be considered when operating hole spin qubits. AU - Katsaros, Georgios AU - Kukucka, Josip AU - Vukušić, Lada AU - Watzinger, Hannes AU - Gao, Fei AU - Wang, Ting AU - Zhang, Jian-Jun AU - Held, Karsten ID - 8203 IS - 7 JF - Nano Letters SN - 1530-6984 TI - Zero field splitting of heavy-hole states in quantum dots VL - 20 ER - TY - JOUR AB - Holes confined in quantum dots have gained considerable interest in the past few years due to their potential as spin qubits. Here we demonstrate two-axis control of a spin 3/2 qubit in natural Ge. The qubit is formed in a hut wire double quantum dot device. The Pauli spin blockade principle allowed us to demonstrate electric dipole spin resonance by applying a radio frequency electric field to one of the electrodes defining the double quantum dot. Coherent hole spin oscillations with Rabi frequencies reaching 140 MHz are demonstrated and dephasing times of 130 ns are measured. The reported results emphasize the potential of Ge as a platform for fast and electrically tunable hole spin qubit devices. AU - Watzinger, Hannes AU - Kukucka, Josip AU - Vukusic, Lada AU - Gao, Fei AU - Wang, Ting AU - Schäffler, Friedrich AU - Zhang, Jian AU - Katsaros, Georgios ID - 77 IS - 3902 JF - Nature Communications TI - A germanium hole spin qubit VL - 9 ER - TY - JOUR AB - The strong atomistic spin–orbit coupling of holes makes single-shot spin readout measurements difficult because it reduces the spin lifetimes. By integrating the charge sensor into a high bandwidth radio frequency reflectometry setup, we were able to demonstrate single-shot readout of a germanium quantum dot hole spin and measure the spin lifetime. Hole spin relaxation times of about 90 μs at 500 mT are reported, with a total readout visibility of about 70%. By analyzing separately the spin-to-charge conversion and charge readout fidelities, we have obtained insight into the processes limiting the visibilities of hole spins. The analyses suggest that high hole visibilities are feasible at realistic experimental conditions, underlying the potential of hole spins for the realization of viable qubit devices. AU - Vukušić, Lada AU - Kukucka, Josip AU - Watzinger, Hannes AU - Milem, Joshua M AU - Schäffler, Friedrich AU - Katsaros, Georgios ID - 23 IS - 11 JF - Nano Letters SN - 15306984 TI - Single-shot readout of hole spins in Ge VL - 18 ER - TY - JOUR AB - Heavy holes confined in quantum dots are predicted to be promising candidates for the realization of spin qubits with long coherence times. Here we focus on such heavy-hole states confined in germanium hut wires. By tuning the growth density of the latter we can realize a T-like structure between two neighboring wires. Such a structure allows the realization of a charge sensor, which is electrostatically and tunnel coupled to a quantum dot, with charge-transfer signals as high as 0.3 e. By integrating the T-like structure into a radiofrequency reflectometry setup, single-shot measurements allowing the extraction of hole tunneling times are performed. The extracted tunneling times of less than 10 μs are attributed to the small effective mass of Ge heavy-hole states and pave the way toward projective spin readout measurements. AU - Vukusic, Lada AU - Kukucka, Josip AU - Watzinger, Hannes AU - Katsaros, Georgios ID - 840 IS - 9 JF - Nano Letters SN - 15306984 TI - Fast hole tunneling times in germanium hut wires probed by single-shot reflectometry VL - 17 ER - TY - JOUR AB - Hole spins have gained considerable interest in the past few years due to their potential for fast electrically controlled qubits. Here, we study holes confined in Ge hut wires, a so-far unexplored type of nanostructure. Low-temperature magnetotransport measurements reveal a large anisotropy between the in-plane and out-of-plane g-factors of up to 18. Numerical simulations verify that this large anisotropy originates from a confined wave function of heavy-hole character. A light-hole admixture of less than 1% is estimated for the states of lowest energy, leading to a surprisingly large reduction of the out-of-plane g-factors compared with those for pure heavy holes. Given this tiny light-hole contribution, the spin lifetimes are expected to be very long, even in isotopically nonpurified samples. AU - Watzinger, Hannes AU - Kloeffel, Christoph AU - Vukusic, Lada AU - Rossell, Marta AU - Sessi, Violetta AU - Kukucka, Josip AU - Kirchschlager, Raimund AU - Lausecker, Elisabeth AU - Truhlar, Alisha AU - Glaser, Martin AU - Rastelli, Armando AU - Fuhrer, Andreas AU - Loss, Daniel AU - Katsaros, Georgios ID - 1328 IS - 11 JF - Nano Letters TI - Heavy-hole states in germanium hut wires VL - 16 ER -