--- _id: '14793' abstract: - lang: eng text: Superconductor/semiconductor hybrid devices have attracted increasing interest in the past years. Superconducting electronics aims to complement semiconductor technology, while hybrid architectures are at the forefront of new ideas such as topological superconductivity and protected qubits. In this work, we engineer the induced superconductivity in two-dimensional germanium hole gas by varying the distance between the quantum well and the aluminum. We demonstrate a hard superconducting gap and realize an electrically and flux tunable superconducting diode using a superconducting quantum interference device (SQUID). This allows to tune the current phase relation (CPR), to a regime where single Cooper pair tunneling is suppressed, creating a sin(2y) CPR. Shapiro experiments complement this interpretation and the microwave drive allows to create a diode with ≈ 100% efficiency. The reported results open up the path towards integration of spin qubit devices, microwave resonators and (protected) superconducting qubits on the same silicon technology compatible platform. acknowledged_ssus: - _id: M-Shop - _id: NanoFab acknowledgement: "We acknowledge Alexander Brinkmann, Alessandro Crippa, Francesco Giazotto, Andrew Higginbotham, Andrea Iorio, Giordano Scappucci, Christian Schonenberger, and Lukas Splitthoff for helpful discussions. We thank Marcel Verheijen for the support in the TEM analysis. This research and related results were made possible with the support of the NOMIS\r\nFoundation. It was supported by the Scientific Service Units of ISTA through resources provided by the MIBA Machine Shop and the nanofabrication facility, the European Union’s Horizon 2020 research andinnovation programme under Grant Agreement No 862046, the HORIZONRIA\r\n101069515 project, the European Innovation Council Pathfinder grant no. 101115315 (QuKiT), and the FWF Projects #P-32235, #P-36507 and #F-8606. For the purpose of open access, the authors have applied a CC BY public copyright licence to any Author Accepted Manuscript version arising from this submission. R.S.S. acknowledges Spanish CM “Talento Program\"\r\nProject No. 2022-T1/IND-24070. J.J. acknowledges European Research Council TOCINA 834290." article_number: '169' article_processing_charge: Yes article_type: original author: - first_name: Marco full_name: Valentini, Marco id: C0BB2FAC-D767-11E9-B658-BC13E6697425 last_name: Valentini - first_name: Oliver full_name: Sagi, Oliver id: 71616374-A8E9-11E9-A7CA-09ECE5697425 last_name: Sagi - first_name: Levon full_name: Baghumyan, Levon id: 7aa1f788-b527-11ee-aa9e-e6111a79e0c7 last_name: Baghumyan - first_name: Thijs full_name: de Gijsel, Thijs id: a0ece13c-b527-11ee-929d-bad130106eee last_name: de Gijsel - first_name: Jason full_name: Jung, Jason id: 4C9ACE7A-F248-11E8-B48F-1D18A9856A87 last_name: Jung - first_name: Stefano full_name: Calcaterra, Stefano last_name: Calcaterra - first_name: Andrea full_name: Ballabio, Andrea last_name: Ballabio - first_name: Juan L full_name: Aguilera Servin, Juan L id: 2A67C376-F248-11E8-B48F-1D18A9856A87 last_name: Aguilera Servin orcid: 0000-0002-2862-8372 - first_name: Kushagra full_name: Aggarwal, Kushagra id: b22ab905-3539-11eb-84c3-fc159dcd79cb last_name: Aggarwal orcid: 0000-0001-9985-9293 - first_name: Marian full_name: Janik, Marian id: 396A1950-F248-11E8-B48F-1D18A9856A87 last_name: Janik - first_name: Thomas full_name: Adletzberger, Thomas id: 38756BB2-F248-11E8-B48F-1D18A9856A87 last_name: Adletzberger - first_name: Rubén full_name: Seoane Souto, Rubén last_name: Seoane Souto - first_name: Martin full_name: Leijnse, Martin last_name: Leijnse - first_name: Jeroen full_name: Danon, Jeroen last_name: Danon - first_name: Constantin full_name: Schrade, Constantin last_name: Schrade - first_name: Erik full_name: Bakkers, Erik last_name: Bakkers - first_name: Daniel full_name: Chrastina, Daniel last_name: Chrastina - first_name: Giovanni full_name: Isella, Giovanni last_name: Isella - first_name: Georgios full_name: Katsaros, Georgios id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros orcid: 0000-0001-8342-202X citation: ama: Valentini M, Sagi O, Baghumyan L, et al. Parity-conserving Cooper-pair transport and ideal superconducting diode in planar germanium. Nature Communications. 2024;15. doi:10.1038/s41467-023-44114-0 apa: Valentini, M., Sagi, O., Baghumyan, L., de Gijsel, T., Jung, J., Calcaterra, S., … Katsaros, G. (2024). Parity-conserving Cooper-pair transport and ideal superconducting diode in planar germanium. Nature Communications. Springer Nature. https://doi.org/10.1038/s41467-023-44114-0 chicago: Valentini, Marco, Oliver Sagi, Levon Baghumyan, Thijs de Gijsel, Jason Jung, Stefano Calcaterra, Andrea Ballabio, et al. “Parity-Conserving Cooper-Pair Transport and Ideal Superconducting Diode in Planar Germanium.” Nature Communications. Springer Nature, 2024. https://doi.org/10.1038/s41467-023-44114-0. ieee: M. Valentini et al., “Parity-conserving Cooper-pair transport and ideal superconducting diode in planar germanium,” Nature Communications, vol. 15. Springer Nature, 2024. ista: Valentini M, Sagi O, Baghumyan L, de Gijsel T, Jung J, Calcaterra S, Ballabio A, Aguilera Servin JL, Aggarwal K, Janik M, Adletzberger T, Seoane Souto R, Leijnse M, Danon J, Schrade C, Bakkers E, Chrastina D, Isella G, Katsaros G. 2024. Parity-conserving Cooper-pair transport and ideal superconducting diode in planar germanium. Nature Communications. 15, 169. mla: Valentini, Marco, et al. “Parity-Conserving Cooper-Pair Transport and Ideal Superconducting Diode in Planar Germanium.” Nature Communications, vol. 15, 169, Springer Nature, 2024, doi:10.1038/s41467-023-44114-0. short: M. Valentini, O. Sagi, L. Baghumyan, T. de Gijsel, J. Jung, S. Calcaterra, A. Ballabio, J.L. Aguilera Servin, K. Aggarwal, M. Janik, T. Adletzberger, R. Seoane Souto, M. Leijnse, J. Danon, C. Schrade, E. Bakkers, D. Chrastina, G. Isella, G. Katsaros, Nature Communications 15 (2024). date_created: 2024-01-14T23:00:56Z date_published: 2024-01-02T00:00:00Z date_updated: 2024-01-17T11:07:55Z day: '02' ddc: - '530' department: - _id: GeKa doi: 10.1038/s41467-023-44114-0 ec_funded: 1 external_id: pmid: - '38167818' file: - access_level: open_access checksum: ef79173b45eeaf984ffa61ef2f8a52ab content_type: application/pdf creator: dernst date_created: 2024-01-17T11:03:00Z date_updated: 2024-01-17T11:03:00Z file_id: '14825' file_name: 2024_NatureComm_Valentini.pdf file_size: 2336595 relation: main_file success: 1 file_date_updated: 2024-01-17T11:03:00Z has_accepted_license: '1' intvolume: ' 15' language: - iso: eng month: '01' oa: 1 oa_version: Published Version pmid: 1 project: - _id: 237E5020-32DE-11EA-91FC-C7463DDC885E call_identifier: H2020 grant_number: '862046' name: TOPOLOGICALLY PROTECTED AND SCALABLE QUANTUM BITS - _id: 34c0acea-11ca-11ed-8bc3-8775e10fd452 grant_number: '101069515' name: Integrated GermaNIum quanTum tEchnology - _id: bdc2ca30-d553-11ed-ba76-cf164a5bb811 grant_number: '101115315' name: Quantum bits with Kitaev Transmons - _id: 237B3DA4-32DE-11EA-91FC-C7463DDC885E call_identifier: FWF grant_number: P32235 name: Towards scalable hut wire quantum devices - _id: bd8bd29e-d553-11ed-ba76-f0070d4b237a grant_number: P36507 name: Merging spin and superconducting qubits in planar Ge - _id: 34a66131-11ca-11ed-8bc3-a31681c6b03e grant_number: F8606 name: Conventional and unconventional topological superconductors publication: Nature Communications publication_identifier: eissn: - 2041-1723 publication_status: published publisher: Springer Nature quality_controlled: '1' scopus_import: '1' status: public title: Parity-conserving Cooper-pair transport and ideal superconducting diode in planar germanium tmp: image: /images/cc_by.png legal_code_url: https://creativecommons.org/licenses/by/4.0/legalcode name: Creative Commons Attribution 4.0 International Public License (CC-BY 4.0) short: CC BY (4.0) type: journal_article user_id: 2DF688A6-F248-11E8-B48F-1D18A9856A87 volume: 15 year: '2024' ... --- _id: '15018' abstract: - lang: eng text: The epitaxial growth of a strained Ge layer, which is a promising candidate for the channel material of a hole spin qubit, has been demonstrated on 300 mm Si wafers using commercially available Si0.3Ge0.7 strain relaxed buffer (SRB) layers. The assessment of the layer and the interface qualities for a buried strained Ge layer embedded in Si0.3Ge0.7 layers is reported. The XRD reciprocal space mapping confirmed that the reduction of the growth temperature enables the 2-dimensional growth of the Ge layer fully strained with respect to the Si0.3Ge0.7. Nevertheless, dislocations at the top and/or bottom interface of the Ge layer were observed by means of electron channeling contrast imaging, suggesting the importance of the careful dislocation assessment. The interface abruptness does not depend on the selection of the precursor gases, but it is strongly influenced by the growth temperature which affects the coverage of the surface H-passivation. The mobility of 2.7 × 105 cm2/Vs is promising, while the low percolation density of 3 × 1010 /cm2 measured with a Hall-bar device at 7 K illustrates the high quality of the heterostructure thanks to the high Si0.3Ge0.7 SRB quality. acknowledgement: The Ge project received funding from the European Union's Horizon Europe programme under the Grant Agreement 101069515 – IGNITE. Siltronic AG is acknowledged for providing the SRB wafers. This work was supported by Imec's Industrial Affiliation Program on Quantum Computing. article_number: '108231' article_processing_charge: No article_type: original author: - first_name: Yosuke full_name: Shimura, Yosuke last_name: Shimura - first_name: Clement full_name: Godfrin, Clement last_name: Godfrin - first_name: Andriy full_name: Hikavyy, Andriy last_name: Hikavyy - first_name: Roy full_name: Li, Roy last_name: Li - first_name: Juan L full_name: Aguilera Servin, Juan L id: 2A67C376-F248-11E8-B48F-1D18A9856A87 last_name: Aguilera Servin orcid: 0000-0002-2862-8372 - first_name: Georgios full_name: Katsaros, Georgios id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros orcid: 0000-0001-8342-202X - first_name: Paola full_name: Favia, Paola last_name: Favia - first_name: Han full_name: Han, Han last_name: Han - first_name: Danny full_name: Wan, Danny last_name: Wan - first_name: Kristiaan full_name: de Greve, Kristiaan last_name: de Greve - first_name: Roger full_name: Loo, Roger last_name: Loo citation: ama: Shimura Y, Godfrin C, Hikavyy A, et al. Compressively strained epitaxial Ge layers for quantum computing applications. Materials Science in Semiconductor Processing. 2024;174(5). doi:10.1016/j.mssp.2024.108231 apa: Shimura, Y., Godfrin, C., Hikavyy, A., Li, R., Aguilera Servin, J. L., Katsaros, G., … Loo, R. (2024). Compressively strained epitaxial Ge layers for quantum computing applications. Materials Science in Semiconductor Processing. Elsevier. https://doi.org/10.1016/j.mssp.2024.108231 chicago: Shimura, Yosuke, Clement Godfrin, Andriy Hikavyy, Roy Li, Juan L Aguilera Servin, Georgios Katsaros, Paola Favia, et al. “Compressively Strained Epitaxial Ge Layers for Quantum Computing Applications.” Materials Science in Semiconductor Processing. Elsevier, 2024. https://doi.org/10.1016/j.mssp.2024.108231. ieee: Y. Shimura et al., “Compressively strained epitaxial Ge layers for quantum computing applications,” Materials Science in Semiconductor Processing, vol. 174, no. 5. Elsevier, 2024. ista: Shimura Y, Godfrin C, Hikavyy A, Li R, Aguilera Servin JL, Katsaros G, Favia P, Han H, Wan D, de Greve K, Loo R. 2024. Compressively strained epitaxial Ge layers for quantum computing applications. Materials Science in Semiconductor Processing. 174(5), 108231. mla: Shimura, Yosuke, et al. “Compressively Strained Epitaxial Ge Layers for Quantum Computing Applications.” Materials Science in Semiconductor Processing, vol. 174, no. 5, 108231, Elsevier, 2024, doi:10.1016/j.mssp.2024.108231. short: Y. Shimura, C. Godfrin, A. Hikavyy, R. Li, J.L. Aguilera Servin, G. Katsaros, P. Favia, H. Han, D. Wan, K. de Greve, R. Loo, Materials Science in Semiconductor Processing 174 (2024). date_created: 2024-02-22T14:10:40Z date_published: 2024-02-20T00:00:00Z date_updated: 2024-02-26T10:36:35Z day: '20' ddc: - '530' department: - _id: GeKa - _id: NanoFab doi: 10.1016/j.mssp.2024.108231 has_accepted_license: '1' intvolume: ' 174' issue: '5' keyword: - Mechanical Engineering - Mechanics of Materials - Condensed Matter Physics - General Materials Science language: - iso: eng main_file_link: - open_access: '1' url: https://doi.org/10.1016/j.mssp.2024.108231 month: '02' oa: 1 oa_version: Published Version project: - _id: 34c0acea-11ca-11ed-8bc3-8775e10fd452 grant_number: '101069515' name: Integrated GermaNIum quanTum tEchnology publication: Materials Science in Semiconductor Processing publication_identifier: issn: - 1369-8001 publication_status: epub_ahead publisher: Elsevier quality_controlled: '1' status: public title: Compressively strained epitaxial Ge layers for quantum computing applications tmp: image: /images/cc_by.png legal_code_url: https://creativecommons.org/licenses/by/4.0/legalcode name: Creative Commons Attribution 4.0 International Public License (CC-BY 4.0) short: CC BY (4.0) type: journal_article user_id: 2DF688A6-F248-11E8-B48F-1D18A9856A87 volume: 174 year: '2024' ... --- _id: '13312' abstract: - lang: eng text: "Superconductor/semiconductor hybrid devices have attracted increasing\r\ninterest in the past years. Superconducting electronics aims to complement\r\nsemiconductor technology, while hybrid architectures are at the forefront of\r\nnew ideas such as topological superconductivity and protected qubits. In this\r\nwork, we engineer the induced superconductivity in two-dimensional germanium\r\nhole gas by varying the distance between the quantum well and the aluminum. We\r\ndemonstrate a hard superconducting gap and realize an electrically and flux\r\ntunable superconducting diode using a superconducting quantum interference\r\ndevice (SQUID). This allows to tune the current phase relation (CPR), to a\r\nregime where single Cooper pair tunneling is suppressed, creating a $ \\sin\r\n\\left( 2 \\varphi \\right)$ CPR. Shapiro experiments complement this\r\ninterpretation and the microwave drive allows to create a diode with $ \\approx\r\n100 \\%$ efficiency. The reported results open up the path towards monolithic\r\nintegration of spin qubit devices, microwave resonators and (protected)\r\nsuperconducting qubits on a silicon technology compatible platform." acknowledged_ssus: - _id: M-Shop - _id: NanoFab acknowledgement: "The authors acknowledge Alexander Brinkmann, Alessandro Crippa, Andrew Higginbotham, Andrea Iorio, Giordano\r\nScappucci and Christian Schonenberger for helpful discussions. We thank Marcel Verheijen for the support in the\r\nTEM analysis. This research and related results were made\r\npossible with the support of the NOMIS Foundation. It was\r\nsupported by the Scientific Service Units of ISTA through resources provided by the MIBA Machine Shop and the\r\nnanofabrication facility, the European Union’s Horizon 2020\r\nresearch and innovation programme under Grant Agreement\r\nNo 862046, the HORIZON-RIA 101069515 project and the\r\nFWF Projects #P-32235, #P-36507 and #F-8606. R.S.S.\r\nacknowledges Spanish CM “Talento Program” Project No.\r\n2022-T1/IND-24070." article_number: '2306.07109' article_processing_charge: No author: - first_name: Marco full_name: Valentini, Marco id: C0BB2FAC-D767-11E9-B658-BC13E6697425 last_name: Valentini - first_name: Oliver full_name: Sagi, Oliver id: 71616374-A8E9-11E9-A7CA-09ECE5697425 last_name: Sagi - first_name: Levon full_name: Baghumyan, Levon last_name: Baghumyan - first_name: Thijs de full_name: Gijsel, Thijs de last_name: Gijsel - first_name: Jason full_name: Jung, Jason id: 4C9ACE7A-F248-11E8-B48F-1D18A9856A87 last_name: Jung - first_name: Stefano full_name: Calcaterra, Stefano last_name: Calcaterra - first_name: Andrea full_name: Ballabio, Andrea last_name: Ballabio - first_name: Juan Aguilera full_name: Servin, Juan Aguilera last_name: Servin - first_name: Kushagra full_name: Aggarwal, Kushagra id: b22ab905-3539-11eb-84c3-fc159dcd79cb last_name: Aggarwal orcid: 0000-0001-9985-9293 - first_name: Marian full_name: Janik, Marian id: 396A1950-F248-11E8-B48F-1D18A9856A87 last_name: Janik - first_name: Thomas full_name: Adletzberger, Thomas id: 38756BB2-F248-11E8-B48F-1D18A9856A87 last_name: Adletzberger - first_name: Rubén Seoane full_name: Souto, Rubén Seoane last_name: Souto - first_name: Martin full_name: Leijnse, Martin last_name: Leijnse - first_name: Jeroen full_name: Danon, Jeroen last_name: Danon - first_name: Constantin full_name: Schrade, Constantin last_name: Schrade - first_name: Erik full_name: Bakkers, Erik last_name: Bakkers - first_name: Daniel full_name: Chrastina, Daniel last_name: Chrastina - first_name: Giovanni full_name: Isella, Giovanni last_name: Isella - first_name: Georgios full_name: Katsaros, Georgios id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros orcid: 0000-0001-8342-202X citation: ama: Valentini M, Sagi O, Baghumyan L, et al. Radio frequency driven superconducting diode and parity conserving  Cooper pair transport in a two-dimensional germanium hole gas. arXiv. doi:10.48550/arXiv.2306.07109 apa: Valentini, M., Sagi, O., Baghumyan, L., Gijsel, T. de, Jung, J., Calcaterra, S., … Katsaros, G. (n.d.). Radio frequency driven superconducting diode and parity conserving  Cooper pair transport in a two-dimensional germanium hole gas. arXiv. https://doi.org/10.48550/arXiv.2306.07109 chicago: Valentini, Marco, Oliver Sagi, Levon Baghumyan, Thijs de Gijsel, Jason Jung, Stefano Calcaterra, Andrea Ballabio, et al. “Radio Frequency Driven Superconducting Diode and Parity Conserving  Cooper Pair Transport in a Two-Dimensional Germanium Hole Gas.” ArXiv, n.d. https://doi.org/10.48550/arXiv.2306.07109. ieee: M. Valentini et al., “Radio frequency driven superconducting diode and parity conserving  Cooper pair transport in a two-dimensional germanium hole gas,” arXiv. . ista: Valentini M, Sagi O, Baghumyan L, Gijsel T de, Jung J, Calcaterra S, Ballabio A, Servin JA, Aggarwal K, Janik M, Adletzberger T, Souto RS, Leijnse M, Danon J, Schrade C, Bakkers E, Chrastina D, Isella G, Katsaros G. Radio frequency driven superconducting diode and parity conserving  Cooper pair transport in a two-dimensional germanium hole gas. arXiv, 2306.07109. mla: Valentini, Marco, et al. “Radio Frequency Driven Superconducting Diode and Parity Conserving  Cooper Pair Transport in a Two-Dimensional Germanium Hole Gas.” ArXiv, 2306.07109, doi:10.48550/arXiv.2306.07109. short: M. Valentini, O. Sagi, L. Baghumyan, T. de Gijsel, J. Jung, S. Calcaterra, A. Ballabio, J.A. Servin, K. Aggarwal, M. Janik, T. Adletzberger, R.S. Souto, M. Leijnse, J. Danon, C. Schrade, E. Bakkers, D. Chrastina, G. Isella, G. Katsaros, ArXiv (n.d.). date_created: 2023-07-26T11:17:20Z date_published: 2023-06-13T00:00:00Z date_updated: 2024-02-07T07:52:32Z day: '13' ddc: - '530' department: - _id: GeKa - _id: M-Shop doi: 10.48550/arXiv.2306.07109 ec_funded: 1 external_id: arxiv: - '2306.07109' keyword: - Mesoscale and Nanoscale Physics language: - iso: eng main_file_link: - open_access: '1' url: https://doi.org/10.48550/arXiv.2306.07109 month: '06' oa: 1 oa_version: Preprint project: - _id: 237E5020-32DE-11EA-91FC-C7463DDC885E call_identifier: H2020 grant_number: '862046' name: TOPOLOGICALLY PROTECTED AND SCALABLE QUANTUM BITS - _id: 237B3DA4-32DE-11EA-91FC-C7463DDC885E call_identifier: FWF grant_number: P32235 name: Towards scalable hut wire quantum devices - _id: bd8bd29e-d553-11ed-ba76-f0070d4b237a grant_number: P36507 name: Merging spin and superconducting qubits in planar Ge - _id: 34a66131-11ca-11ed-8bc3-a31681c6b03e grant_number: F8606 name: Conventional and unconventional topological superconductors - _id: bd5b4ec5-d553-11ed-ba76-a6eedb083344 name: Protected states of quantum matter publication: arXiv publication_status: submitted related_material: record: - id: '13286' relation: dissertation_contains status: public status: public title: Radio frequency driven superconducting diode and parity conserving Cooper pair transport in a two-dimensional germanium hole gas tmp: image: /images/cc_by.png legal_code_url: https://creativecommons.org/licenses/by/4.0/legalcode name: Creative Commons Attribution 4.0 International Public License (CC-BY 4.0) short: CC BY (4.0) type: preprint user_id: 8b945eb4-e2f2-11eb-945a-df72226e66a9 year: '2023' ... --- _id: '10920' abstract: - lang: eng text: The spin-orbit interaction permits to control the state of a spin qubit via electric fields. For holes it is particularly strong, allowing for fast all electrical qubit manipulation, and yet an in-depth understanding of this interaction in hole systems is missing. Here we investigate, experimentally and theoretically, the effect of the cubic Rashba spin-orbit interaction on the mixing of the spin states by studying singlet-triplet oscillations in a planar Ge hole double quantum dot. Landau-Zener sweeps at different magnetic field directions allow us to disentangle the effects of the spin-orbit induced spin-flip term from those caused by strongly site-dependent and anisotropic quantum dot g tensors. Our work, therefore, provides new insights into the hole spin-orbit interaction, necessary for optimizing future qubit experiments. acknowledged_ssus: - _id: M-Shop - _id: NanoFab acknowledgement: "This research was supported by the Scientific Service Units of ISTA through resources provided by the MIBA Machine Shop and the nanofabrication facility. This project has received funding from the European Union’s Horizon 2020 research and innovation program under the Marie\r\nSkłodowska-Curie Grant Agreement No. 844511, No. 75441, and by the FWF-P 30207, I05060, and M3032-N projects. A. B. acknowledges support from the EU Horizon-2020 FET project microSPIRE, ID: 766955. P.M. M. and G. B. acknowledge funding by the Deutsche Forschungsgemeinschaft (DFG—German Research Foundation) under Project No. 450396347. This work was supported by the Royal Society (URF\\R1\\191150) and the European Research Council (Grant Agreement No. 948932), N. A. acknowledges the use of the University of Oxford Advanced Research Computing (ARC) facility." article_number: '126803' article_processing_charge: No article_type: original author: - first_name: Daniel full_name: Jirovec, Daniel id: 4C473F58-F248-11E8-B48F-1D18A9856A87 last_name: Jirovec orcid: 0000-0002-7197-4801 - first_name: Philipp M. full_name: Mutter, Philipp M. last_name: Mutter - first_name: Andrea C full_name: Hofmann, Andrea C id: 340F461A-F248-11E8-B48F-1D18A9856A87 last_name: Hofmann - first_name: Alessandro full_name: Crippa, Alessandro id: 1F2B21A2-F6E7-11E9-9B82-F7DBE5697425 last_name: Crippa orcid: 0000-0002-2968-611X - first_name: Marek full_name: Rychetsky, Marek last_name: Rychetsky - first_name: David L. full_name: Craig, David L. last_name: Craig - first_name: Josip full_name: Kukucka, Josip id: 3F5D8856-F248-11E8-B48F-1D18A9856A87 last_name: Kukucka - first_name: Frederico full_name: Martins, Frederico id: 38F80F9A-1CB8-11EA-BC76-B49B3DDC885E last_name: Martins orcid: 0000-0003-2668-2401 - first_name: Andrea full_name: Ballabio, Andrea last_name: Ballabio - first_name: Natalia full_name: Ares, Natalia last_name: Ares - first_name: Daniel full_name: Chrastina, Daniel last_name: Chrastina - first_name: Giovanni full_name: Isella, Giovanni last_name: Isella - first_name: 'Guido ' full_name: 'Burkard, Guido ' last_name: Burkard - first_name: Georgios full_name: Katsaros, Georgios id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros citation: ama: Jirovec D, Mutter PM, Hofmann AC, et al. Dynamics of hole singlet-triplet qubits with large g-factor differences. Physical Review Letters. 2022;128(12). doi:10.1103/PhysRevLett.128.126803 apa: Jirovec, D., Mutter, P. M., Hofmann, A. C., Crippa, A., Rychetsky, M., Craig, D. L., … Katsaros, G. (2022). Dynamics of hole singlet-triplet qubits with large g-factor differences. Physical Review Letters. American Physical Society. https://doi.org/10.1103/PhysRevLett.128.126803 chicago: Jirovec, Daniel, Philipp M. Mutter, Andrea C Hofmann, Alessandro Crippa, Marek Rychetsky, David L. Craig, Josip Kukucka, et al. “Dynamics of Hole Singlet-Triplet Qubits with Large g-Factor Differences.” Physical Review Letters. American Physical Society, 2022. https://doi.org/10.1103/PhysRevLett.128.126803. ieee: D. Jirovec et al., “Dynamics of hole singlet-triplet qubits with large g-factor differences,” Physical Review Letters, vol. 128, no. 12. American Physical Society, 2022. ista: Jirovec D, Mutter PM, Hofmann AC, Crippa A, Rychetsky M, Craig DL, Kukucka J, Martins F, Ballabio A, Ares N, Chrastina D, Isella G, Burkard G, Katsaros G. 2022. Dynamics of hole singlet-triplet qubits with large g-factor differences. Physical Review Letters. 128(12), 126803. mla: Jirovec, Daniel, et al. “Dynamics of Hole Singlet-Triplet Qubits with Large g-Factor Differences.” Physical Review Letters, vol. 128, no. 12, 126803, American Physical Society, 2022, doi:10.1103/PhysRevLett.128.126803. short: D. Jirovec, P.M. Mutter, A.C. Hofmann, A. Crippa, M. Rychetsky, D.L. Craig, J. Kukucka, F. Martins, A. Ballabio, N. Ares, D. Chrastina, G. Isella, G. Burkard, G. Katsaros, Physical Review Letters 128 (2022). date_created: 2022-03-24T15:51:11Z date_published: 2022-03-24T00:00:00Z date_updated: 2023-08-03T06:14:58Z day: '24' ddc: - '530' department: - _id: GradSch - _id: GeKa doi: 10.1103/PhysRevLett.128.126803 ec_funded: 1 external_id: arxiv: - '2111.05130' isi: - '000786542500004' file: - access_level: open_access checksum: 6e66ad548d18db9c131f304acbd5a1f4 content_type: application/pdf creator: dernst date_created: 2022-03-28T06:53:39Z date_updated: 2022-03-28T06:53:39Z file_id: '10928' file_name: 2022_PhysRevLetters_Jirovec.pdf file_size: 1266515 relation: main_file success: 1 file_date_updated: 2022-03-28T06:53:39Z has_accepted_license: '1' intvolume: ' 128' isi: 1 issue: '12' language: - iso: eng month: '03' oa: 1 oa_version: Published Version project: - _id: 26A151DA-B435-11E9-9278-68D0E5697425 call_identifier: H2020 grant_number: '844511' name: Majorana bound states in Ge/SiGe heterostructures - _id: 260C2330-B435-11E9-9278-68D0E5697425 call_identifier: H2020 grant_number: '754411' name: ISTplus - Postdoctoral Fellowships - _id: 2641CE5E-B435-11E9-9278-68D0E5697425 call_identifier: FWF grant_number: P30207 name: Hole spin orbit qubits in Ge quantum wells - _id: c0977eea-5a5b-11eb-8a69-a862db0cf4d1 grant_number: I05060 name: High impedance circuit quantum electrodynamics with hole spins - _id: c08c05c4-5a5b-11eb-8a69-dc6ce49d7973 grant_number: M03032 name: Long-range spin exchange for 2D qubits architectures publication: Physical Review Letters publication_identifier: eissn: - 1079-7114 publication_status: published publisher: American Physical Society quality_controlled: '1' status: public title: Dynamics of hole singlet-triplet qubits with large g-factor differences tmp: image: /images/cc_by.png legal_code_url: https://creativecommons.org/licenses/by/4.0/legalcode name: Creative Commons Attribution 4.0 International Public License (CC-BY 4.0) short: CC BY (4.0) type: journal_article user_id: 4359f0d1-fa6c-11eb-b949-802e58b17ae8 volume: 128 year: '2022' ... --- _id: '12118' abstract: - lang: eng text: Hybrid semiconductor–superconductor devices hold great promise for realizing topological quantum computing with Majorana zero modes1,2,3,4,5. However, multiple claims of Majorana detection, based on either tunnelling6,7,8,9,10 or Coulomb blockade (CB) spectroscopy11,12, remain disputed. Here we devise an experimental protocol that allows us to perform both types of measurement on the same hybrid island by adjusting its charging energy via tunable junctions to the normal leads. This method reduces ambiguities of Majorana detections by checking the consistency between CB spectroscopy and zero-bias peaks in non-blockaded transport. Specifically, we observe junction-dependent, even–odd modulated, single-electron CB peaks in InAs/Al hybrid nanowires without concomitant low-bias peaks in tunnelling spectroscopy. We provide a theoretical interpretation of the experimental observations in terms of low-energy, longitudinally confined island states rather than overlapping Majorana modes. Our results highlight the importance of combined measurements on the same device for the identification of topological Majorana zero modes. acknowledged_ssus: - _id: M-Shop - _id: NanoFab acknowledgement: We thank P. Krogstrup for providing us with the NW materials. We thank A. Higginbotham, E. J. H. Lee, C. Marcus and S. Vaitiekėnas for helpful discussions and G. Steffensen for his input on the diffusive Little-Parks theory. This research was supported by the Scientific Service Units of ISTA through resources provided by the MIBA Machine Shop and the nanofabrication facility; the NOMIS Foundation; the CSIC Interdisciplinary Thematic Platform (PTI+) on Quantum Technologies (PTI-QTEP+). A.H. acknowledges support from H2020-MSCA-IF-2018/844511. ICN2 also acknowledges funding from Generalitat de Catalunya 2017 SGR 327. ICN2 is supported by the Severo Ochoa Program from Spanish MINECO (Grant no. SEV-2017-0706) and is funded by the CERCA Programme/Generalitat de Catalunya. Part of the present work has been performed in the framework of Universitat Autònoma de Barcelona Materials Science PhD programme. Authors acknowledge the use of instrumentation as well as the technical advice provided by the National Facility ELECMI ICTS, node ‘Laboratorio de Microscopías Avanzadas’ at University of Zaragoza. This project has received funding from the European Union’s Horizon 2020 research and innovation programme under grant agreement no. 823717-ESTEEM3. This study was supported by MCIN with funding from European Union NextGenerationEU (PRTR-C17.I1) and Generalitat de Catalunya. This research is part of the CSIC programme for the Spanish Recovery, Transformation and Resilience Plan funded by the Recovery and Resilience Facility of the European Union, established by the Regulation (EU) 2020/2094. We thank support from Grant PGC2018-097018-BI00, project FlagERA TOPOGRAPH (PCI2018-093026) and project NANOGEN (PID2020-116093RB-C43), funded by MCIN/AEI/10.13039/501100011033/ and by ‘ERDF A way of making Europe’, by the European Union. M. Botifoll acknowledges support from SUR Generalitat de Catalunya and the EU Social Fund (project ref. 2020 FI 00103). article_processing_charge: No article_type: original author: - first_name: Marco full_name: Valentini, Marco id: C0BB2FAC-D767-11E9-B658-BC13E6697425 last_name: Valentini - first_name: Maksim full_name: Borovkov, Maksim id: 2ac7a0a2-3562-11eb-9256-fbd18ea55087 last_name: Borovkov - first_name: Elsa full_name: Prada, Elsa last_name: Prada - first_name: Sara full_name: Martí-Sánchez, Sara last_name: Martí-Sánchez - first_name: Marc full_name: Botifoll, Marc last_name: Botifoll - first_name: Andrea C full_name: Hofmann, Andrea C id: 340F461A-F248-11E8-B48F-1D18A9856A87 last_name: Hofmann - first_name: Jordi full_name: Arbiol, Jordi last_name: Arbiol - first_name: Ramón full_name: Aguado, Ramón last_name: Aguado - first_name: Pablo full_name: San-Jose, Pablo last_name: San-Jose - first_name: Georgios full_name: Katsaros, Georgios id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros orcid: 0000-0001-8342-202X citation: ama: Valentini M, Borovkov M, Prada E, et al. Majorana-like Coulomb spectroscopy in the absence of zero-bias peaks. Nature. 2022;612(7940):442-447. doi:10.1038/s41586-022-05382-w apa: Valentini, M., Borovkov, M., Prada, E., Martí-Sánchez, S., Botifoll, M., Hofmann, A. C., … Katsaros, G. (2022). Majorana-like Coulomb spectroscopy in the absence of zero-bias peaks. Nature. Springer Nature. https://doi.org/10.1038/s41586-022-05382-w chicago: Valentini, Marco, Maksim Borovkov, Elsa Prada, Sara Martí-Sánchez, Marc Botifoll, Andrea C Hofmann, Jordi Arbiol, Ramón Aguado, Pablo San-Jose, and Georgios Katsaros. “Majorana-like Coulomb Spectroscopy in the Absence of Zero-Bias Peaks.” Nature. Springer Nature, 2022. https://doi.org/10.1038/s41586-022-05382-w. ieee: M. Valentini et al., “Majorana-like Coulomb spectroscopy in the absence of zero-bias peaks,” Nature, vol. 612, no. 7940. Springer Nature, pp. 442–447, 2022. ista: Valentini M, Borovkov M, Prada E, Martí-Sánchez S, Botifoll M, Hofmann AC, Arbiol J, Aguado R, San-Jose P, Katsaros G. 2022. Majorana-like Coulomb spectroscopy in the absence of zero-bias peaks. Nature. 612(7940), 442–447. mla: Valentini, Marco, et al. “Majorana-like Coulomb Spectroscopy in the Absence of Zero-Bias Peaks.” Nature, vol. 612, no. 7940, Springer Nature, 2022, pp. 442–47, doi:10.1038/s41586-022-05382-w. short: M. Valentini, M. Borovkov, E. Prada, S. Martí-Sánchez, M. Botifoll, A.C. Hofmann, J. Arbiol, R. Aguado, P. San-Jose, G. Katsaros, Nature 612 (2022) 442–447. date_created: 2023-01-12T11:56:45Z date_published: 2022-12-15T00:00:00Z date_updated: 2024-02-21T12:35:33Z day: '15' department: - _id: GeKa doi: 10.1038/s41586-022-05382-w ec_funded: 1 external_id: arxiv: - '2203.07829' isi: - '000899725400001' intvolume: ' 612' isi: 1 issue: '7940' keyword: - Multidisciplinary language: - iso: eng main_file_link: - open_access: '1' url: ' https://doi.org/10.48550/arXiv.2203.07829' month: '12' oa: 1 oa_version: Preprint page: 442-447 project: - _id: 26A151DA-B435-11E9-9278-68D0E5697425 call_identifier: H2020 grant_number: '844511' name: Majorana bound states in Ge/SiGe heterostructures publication: Nature publication_identifier: eissn: - 1476-4687 issn: - 0028-0836 publication_status: published publisher: Springer Nature quality_controlled: '1' related_material: link: - description: News on ISTA Website relation: press_release url: https://ista.ac.at/en/news/imposter-particles-revealed-and-explained/ record: - id: '13286' relation: dissertation_contains status: public - id: '12522' relation: research_data status: public scopus_import: '1' status: public title: Majorana-like Coulomb spectroscopy in the absence of zero-bias peaks type: journal_article user_id: 4359f0d1-fa6c-11eb-b949-802e58b17ae8 volume: 612 year: '2022' ... --- _id: '9464' abstract: - lang: eng text: We firstly introduce the self-assembled growth of highly uniform Ge quantum wires with controllable position, distance and length on patterned Si (001) substrates. We then present the electrically tunable strong spin-orbit coupling, the first Ge hole spin qubit and ultrafast operation of hole spin qubit in the Ge/Si quantum wires. acknowledgement: This work was supported by the National Key R&D Program of China (Grant No. 2016YFA0301700) and the ERC Starting Grant no. 335497. article_number: '9420817' article_processing_charge: No author: - first_name: Fei full_name: Gao, Fei last_name: Gao - first_name: Jie Yin full_name: Zhang, Jie Yin last_name: Zhang - first_name: Jian Huan full_name: Wang, Jian Huan last_name: Wang - first_name: Ming full_name: Ming, Ming last_name: Ming - first_name: Tina full_name: Wang, Tina last_name: Wang - first_name: Jian Jun full_name: Zhang, Jian Jun last_name: Zhang - first_name: Hannes full_name: Watzinger, Hannes id: 35DF8E50-F248-11E8-B48F-1D18A9856A87 last_name: Watzinger - first_name: Josip full_name: Kukucka, Josip id: 3F5D8856-F248-11E8-B48F-1D18A9856A87 last_name: Kukucka - first_name: Lada full_name: Vukušić, Lada id: 31E9F056-F248-11E8-B48F-1D18A9856A87 last_name: Vukušić orcid: 0000-0003-2424-8636 - first_name: Georgios full_name: Katsaros, Georgios id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros orcid: 0000-0001-8342-202X - first_name: Ke full_name: Wang, Ke last_name: Wang - first_name: Gang full_name: Xu, Gang last_name: Xu - first_name: Hai Ou full_name: Li, Hai Ou last_name: Li - first_name: Guo Ping full_name: Guo, Guo Ping last_name: Guo citation: ama: 'Gao F, Zhang JY, Wang JH, et al. Ge/Si quantum wires for quantum computing. In: 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021. IEEE; 2021. doi:10.1109/EDTM50988.2021.9420817' apa: 'Gao, F., Zhang, J. Y., Wang, J. H., Ming, M., Wang, T., Zhang, J. J., … Guo, G. P. (2021). Ge/Si quantum wires for quantum computing. In 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021. Virtual, Online: IEEE. https://doi.org/10.1109/EDTM50988.2021.9420817' chicago: Gao, Fei, Jie Yin Zhang, Jian Huan Wang, Ming Ming, Tina Wang, Jian Jun Zhang, Hannes Watzinger, et al. “Ge/Si Quantum Wires for Quantum Computing.” In 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021. IEEE, 2021. https://doi.org/10.1109/EDTM50988.2021.9420817. ieee: F. Gao et al., “Ge/Si quantum wires for quantum computing,” in 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021, Virtual, Online, 2021. ista: 'Gao F, Zhang JY, Wang JH, Ming M, Wang T, Zhang JJ, Watzinger H, Kukucka J, Vukušić L, Katsaros G, Wang K, Xu G, Li HO, Guo GP. 2021. Ge/Si quantum wires for quantum computing. 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021. EDTM: IEEE Electron Devices Technology and Manufacturing Conference, 9420817.' mla: Gao, Fei, et al. “Ge/Si Quantum Wires for Quantum Computing.” 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021, 9420817, IEEE, 2021, doi:10.1109/EDTM50988.2021.9420817. short: F. Gao, J.Y. Zhang, J.H. Wang, M. Ming, T. Wang, J.J. Zhang, H. Watzinger, J. Kukucka, L. Vukušić, G. Katsaros, K. Wang, G. Xu, H.O. Li, G.P. Guo, in:, 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021, IEEE, 2021. conference: end_date: 2021-04-11 location: Virtual, Online name: 'EDTM: IEEE Electron Devices Technology and Manufacturing Conference' start_date: 2021-04-08 date_created: 2021-06-06T22:01:29Z date_published: 2021-04-08T00:00:00Z date_updated: 2023-10-03T12:51:59Z day: '08' department: - _id: GeKa doi: 10.1109/EDTM50988.2021.9420817 ec_funded: 1 external_id: isi: - '000675595800006' isi: 1 language: - iso: eng month: '04' oa_version: None project: - _id: 25517E86-B435-11E9-9278-68D0E5697425 call_identifier: FP7 grant_number: '335497' name: Towards Spin qubits and Majorana fermions in Germanium selfassembled hut-wires publication: 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021 publication_identifier: isbn: - '9781728181769' publication_status: published publisher: IEEE quality_controlled: '1' scopus_import: '1' status: public title: Ge/Si quantum wires for quantum computing type: conference user_id: 2DF688A6-F248-11E8-B48F-1D18A9856A87 year: '2021' ... --- _id: '9291' abstract: - lang: eng text: "This .zip File contains the transport data for figures presented in the main text and supplementary material of \"Enhancement of Proximity Induced Superconductivity in Planar Germanium\" by K. Aggarwal, et. al. \r\nThe measurements were done using Labber Software and the data is stored in the hdf5 file format. The files can be opened using either the Labber Log Browser (https://labber.org/overview/) or Labber Python API (http://labber.org/online-doc/api/LogFile.html)." article_processing_charge: No author: - first_name: Georgios full_name: Katsaros, Georgios id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros orcid: 0000-0001-8342-202X citation: ama: 'Katsaros G. Raw transport data for: Enhancement of proximity induced superconductivity in planar germanium. 2021. doi:10.15479/AT:ISTA:9291' apa: 'Katsaros, G. (2021). Raw transport data for: Enhancement of proximity induced superconductivity in planar germanium. Institute of Science and Technology Austria. https://doi.org/10.15479/AT:ISTA:9291' chicago: 'Katsaros, Georgios. “Raw Transport Data for: Enhancement of Proximity Induced Superconductivity in Planar Germanium.” Institute of Science and Technology Austria, 2021. https://doi.org/10.15479/AT:ISTA:9291.' ieee: 'G. Katsaros, “Raw transport data for: Enhancement of proximity induced superconductivity in planar germanium.” Institute of Science and Technology Austria, 2021.' ista: 'Katsaros G. 2021. Raw transport data for: Enhancement of proximity induced superconductivity in planar germanium, Institute of Science and Technology Austria, 10.15479/AT:ISTA:9291.' mla: 'Katsaros, Georgios. Raw Transport Data for: Enhancement of Proximity Induced Superconductivity in Planar Germanium. Institute of Science and Technology Austria, 2021, doi:10.15479/AT:ISTA:9291.' short: G. Katsaros, (2021). date_created: 2021-03-27T13:47:49Z date_published: 2021-03-29T00:00:00Z date_updated: 2024-02-21T12:37:14Z day: '29' ddc: - '530' department: - _id: GeKa doi: 10.15479/AT:ISTA:9291 file: - access_level: open_access checksum: 635df3c08fc13c3dac008cd421aefbe4 content_type: application/x-zip-compressed creator: gkatsaro date_created: 2021-03-27T13:46:17Z date_updated: 2021-03-27T13:46:17Z file_id: '9292' file_name: Raw Data- Enhancement of Superconductivity in a Planar Ge hole gas.zip file_size: 10616071 relation: main_file success: 1 - access_level: open_access checksum: 12b3ca69ae7509a346711baae0b02a75 content_type: text/plain creator: dernst date_created: 2021-04-01T07:52:56Z date_updated: 2021-04-01T07:52:56Z file_id: '9302' file_name: README.txt file_size: 470 relation: main_file success: 1 file_date_updated: 2021-04-01T07:52:56Z has_accepted_license: '1' license: https://creativecommons.org/publicdomain/zero/1.0/ month: '03' oa: 1 oa_version: Published Version publisher: Institute of Science and Technology Austria status: public title: 'Raw transport data for: Enhancement of proximity induced superconductivity in planar germanium' tmp: image: /images/cc_0.png legal_code_url: https://creativecommons.org/publicdomain/zero/1.0/legalcode name: Creative Commons Public Domain Dedication (CC0 1.0) short: CC0 (1.0) type: research_data user_id: 2DF688A6-F248-11E8-B48F-1D18A9856A87 year: '2021' ... --- _id: '8910' abstract: - lang: eng text: A semiconducting nanowire fully wrapped by a superconducting shell has been proposed as a platform for obtaining Majorana modes at small magnetic fields. In this study, we demonstrate that the appearance of subgap states in such structures is actually governed by the junction region in tunneling spectroscopy measurements and not the full-shell nanowire itself. Short tunneling regions never show subgap states, whereas longer junctions always do. This can be understood in terms of quantum dots forming in the junction and hosting Andreev levels in the Yu-Shiba-Rusinov regime. The intricate magnetic field dependence of the Andreev levels, through both the Zeeman and Little-Parks effects, may result in robust zero-bias peaks—features that could be easily misinterpreted as originating from Majorana zero modes but are unrelated to topological superconductivity. acknowledged_ssus: - _id: M-Shop - _id: NanoFab acknowledgement: The authors thank A. Higginbotham, E. J. H. Lee and F. R. Martins for helpful discussions. This research was supported by the Scientific Service Units of IST Austria through resources provided by the MIBA Machine Shop and the nanofabrication facility; the NOMIS Foundation and Microsoft; the European Union’s Horizon 2020 research and innovation program under the Marie SklodowskaCurie grant agreement No 844511; the FETOPEN Grant Agreement No. 828948; the European Research Commission through the grant agreement HEMs-DAM No 716655; the Spanish Ministry of Science and Innovation through Grants PGC2018-097018-B-I00, PCI2018-093026, FIS2016-80434-P (AEI/FEDER, EU), RYC2011-09345 (Ram´on y Cajal Programme), and the Mar´ıa de Maeztu Programme for Units of Excellence in R&D (CEX2018-000805-M); the CSIC Research Platform on Quantum Technologies PTI-001. article_number: 82-88 article_processing_charge: No article_type: original author: - first_name: Marco full_name: Valentini, Marco id: C0BB2FAC-D767-11E9-B658-BC13E6697425 last_name: Valentini - first_name: Fernando full_name: Peñaranda, Fernando last_name: Peñaranda - first_name: Andrea C full_name: Hofmann, Andrea C id: 340F461A-F248-11E8-B48F-1D18A9856A87 last_name: Hofmann - first_name: Matthias full_name: Brauns, Matthias id: 33F94E3C-F248-11E8-B48F-1D18A9856A87 last_name: Brauns - first_name: Robert full_name: Hauschild, Robert id: 4E01D6B4-F248-11E8-B48F-1D18A9856A87 last_name: Hauschild orcid: 0000-0001-9843-3522 - first_name: Peter full_name: Krogstrup, Peter last_name: Krogstrup - first_name: Pablo full_name: San-Jose, Pablo last_name: San-Jose - first_name: Elsa full_name: Prada, Elsa last_name: Prada - first_name: Ramón full_name: Aguado, Ramón last_name: Aguado - first_name: Georgios full_name: Katsaros, Georgios id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros orcid: 0000-0001-8342-202X citation: ama: Valentini M, Peñaranda F, Hofmann AC, et al. Nontopological zero-bias peaks in full-shell nanowires induced by flux-tunable Andreev states. Science. 2021;373(6550). doi:10.1126/science.abf1513 apa: Valentini, M., Peñaranda, F., Hofmann, A. C., Brauns, M., Hauschild, R., Krogstrup, P., … Katsaros, G. (2021). Nontopological zero-bias peaks in full-shell nanowires induced by flux-tunable Andreev states. Science. American Association for the Advancement of Science. https://doi.org/10.1126/science.abf1513 chicago: Valentini, Marco, Fernando Peñaranda, Andrea C Hofmann, Matthias Brauns, Robert Hauschild, Peter Krogstrup, Pablo San-Jose, Elsa Prada, Ramón Aguado, and Georgios Katsaros. “Nontopological Zero-Bias Peaks in Full-Shell Nanowires Induced by Flux-Tunable Andreev States.” Science. American Association for the Advancement of Science, 2021. https://doi.org/10.1126/science.abf1513. ieee: M. Valentini et al., “Nontopological zero-bias peaks in full-shell nanowires induced by flux-tunable Andreev states,” Science, vol. 373, no. 6550. American Association for the Advancement of Science, 2021. ista: Valentini M, Peñaranda F, Hofmann AC, Brauns M, Hauschild R, Krogstrup P, San-Jose P, Prada E, Aguado R, Katsaros G. 2021. Nontopological zero-bias peaks in full-shell nanowires induced by flux-tunable Andreev states. Science. 373(6550), 82–88. mla: Valentini, Marco, et al. “Nontopological Zero-Bias Peaks in Full-Shell Nanowires Induced by Flux-Tunable Andreev States.” Science, vol. 373, no. 6550, 82–88, American Association for the Advancement of Science, 2021, doi:10.1126/science.abf1513. short: M. Valentini, F. Peñaranda, A.C. Hofmann, M. Brauns, R. Hauschild, P. Krogstrup, P. San-Jose, E. Prada, R. Aguado, G. Katsaros, Science 373 (2021). date_created: 2020-12-02T10:51:52Z date_published: 2021-07-02T00:00:00Z date_updated: 2024-02-21T12:40:09Z day: '02' department: - _id: GeKa - _id: Bio doi: 10.1126/science.abf1513 ec_funded: 1 external_id: arxiv: - '2008.02348' isi: - '000677843100034' intvolume: ' 373' isi: 1 issue: '6550' language: - iso: eng main_file_link: - open_access: '1' url: https://arxiv.org/abs/2008.02348 month: '07' oa: 1 oa_version: Submitted Version project: - _id: 262116AA-B435-11E9-9278-68D0E5697425 name: Hybrid Semiconductor - Superconductor Quantum Devices - _id: 26A151DA-B435-11E9-9278-68D0E5697425 call_identifier: H2020 grant_number: '844511' name: Majorana bound states in Ge/SiGe heterostructures publication: Science publication_identifier: eissn: - '10959203' issn: - '00368075' publication_status: published publisher: American Association for the Advancement of Science quality_controlled: '1' related_material: link: - description: News on IST Homepage relation: press_release url: https://ist.ac.at/en/news/unfinding-a-split-electron/ record: - id: '13286' relation: dissertation_contains status: public - id: '9389' relation: research_data status: public scopus_import: '1' status: public title: Nontopological zero-bias peaks in full-shell nanowires induced by flux-tunable Andreev states type: journal_article user_id: 4359f0d1-fa6c-11eb-b949-802e58b17ae8 volume: 373 year: '2021' ... --- _id: '10559' abstract: - lang: eng text: Hole gases in planar germanium can have high mobilities in combination with strong spin-orbit interaction and electrically tunable g factors, and are therefore emerging as a promising platform for creating hybrid superconductor-semiconductor devices. A key challenge towards hybrid Ge-based quantum technologies is the design of high-quality interfaces and superconducting contacts that are robust against magnetic fields. In this work, by combining the assets of aluminum, which provides good contact to the Ge, and niobium, which has a significant superconducting gap, we demonstrate highly transparent low-disordered JoFETs with relatively large ICRN products that are capable of withstanding high magnetic fields. We furthermore demonstrate the ability of phase-biasing individual JoFETs, opening up an avenue to explore topological superconductivity in planar Ge. The persistence of superconductivity in the reported hybrid devices beyond 1.8 T paves the way towards integrating spin qubits and proximity-induced superconductivity on the same chip. acknowledged_ssus: - _id: NanoFab - _id: M-Shop acknowledgement: This research and related results were made possible with the support of the NOMIS Foundation. This research was supported by the Scientific Service Units of IST Austria through resources provided by the MIBA Machine Shop and the nanofabrication facility, the European Union's Horizon 2020 research and innovation program under the Marie Sklodowska-Curie Grant agreement No. 844511 Grant Agreement No. 862046. ICN2 acknowledge funding from Generalitat de Catalunya 2017 SGR 327. ICN2 is supported by the Severo Ochoa program from Spanish MINECO (Grant No. SEV-2017-0706) and is funded by the CERCA Programme/Generalitat de Catalunya. Part of the present work has been performed in the framework of Universitat Autnoma de Barcelona Materials Science PhD program. The HAADF-STEM microscopy was conducted in the Laboratorio de Microscopias Avanzadas at Instituto de Nanociencia de Aragon-Universidad de Zaragoza. Authors acknowledge the LMA-INA for offering access to their instruments and expertise. We acknowledge support from CSIC Research Platform on Quantum Technologies PTI-001. This project has received funding from the European Union's Horizon 2020 research and innovation programme under Grant Agreement No. 823717 ESTEEM3. M.B. acknowledges support from SUR Generalitat de Catalunya and the EU Social Fund; project ref. 2020 FI 00103. G.S. and M.V. acknowledge support through a projectruimte grant associated with the Netherlands Organization of Scientific Research (NWO). J.D. acknowledges support through FRIPRO-project 274853, which is funded by the Research Council of Norway. article_number: L022005 article_processing_charge: No article_type: original author: - first_name: Kushagra full_name: Aggarwal, Kushagra id: b22ab905-3539-11eb-84c3-fc159dcd79cb last_name: Aggarwal orcid: 0000-0001-9985-9293 - first_name: Andrea C full_name: Hofmann, Andrea C id: 340F461A-F248-11E8-B48F-1D18A9856A87 last_name: Hofmann - first_name: Daniel full_name: Jirovec, Daniel id: 4C473F58-F248-11E8-B48F-1D18A9856A87 last_name: Jirovec orcid: 0000-0002-7197-4801 - first_name: Ivan full_name: Prieto Gonzalez, Ivan id: 2A307FE2-F248-11E8-B48F-1D18A9856A87 last_name: Prieto Gonzalez orcid: 0000-0002-7370-5357 - first_name: Amir full_name: Sammak, Amir last_name: Sammak - first_name: Marc full_name: Botifoll, Marc last_name: Botifoll - first_name: Sara full_name: Martí-Sánchez, Sara last_name: Martí-Sánchez - first_name: Menno full_name: Veldhorst, Menno last_name: Veldhorst - first_name: Jordi full_name: Arbiol, Jordi last_name: Arbiol - first_name: Giordano full_name: Scappucci, Giordano last_name: Scappucci - first_name: Jeroen full_name: Danon, Jeroen last_name: Danon - first_name: Georgios full_name: Katsaros, Georgios id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros orcid: 0000-0001-8342-202X citation: ama: Aggarwal K, Hofmann AC, Jirovec D, et al. Enhancement of proximity-induced superconductivity in a planar Ge hole gas. Physical Review Research. 2021;3(2). doi:10.1103/physrevresearch.3.l022005 apa: Aggarwal, K., Hofmann, A. C., Jirovec, D., Prieto Gonzalez, I., Sammak, A., Botifoll, M., … Katsaros, G. (2021). Enhancement of proximity-induced superconductivity in a planar Ge hole gas. Physical Review Research. American Physical Society. https://doi.org/10.1103/physrevresearch.3.l022005 chicago: Aggarwal, Kushagra, Andrea C Hofmann, Daniel Jirovec, Ivan Prieto Gonzalez, Amir Sammak, Marc Botifoll, Sara Martí-Sánchez, et al. “Enhancement of Proximity-Induced Superconductivity in a Planar Ge Hole Gas.” Physical Review Research. American Physical Society, 2021. https://doi.org/10.1103/physrevresearch.3.l022005. ieee: K. Aggarwal et al., “Enhancement of proximity-induced superconductivity in a planar Ge hole gas,” Physical Review Research, vol. 3, no. 2. American Physical Society, 2021. ista: Aggarwal K, Hofmann AC, Jirovec D, Prieto Gonzalez I, Sammak A, Botifoll M, Martí-Sánchez S, Veldhorst M, Arbiol J, Scappucci G, Danon J, Katsaros G. 2021. Enhancement of proximity-induced superconductivity in a planar Ge hole gas. Physical Review Research. 3(2), L022005. mla: Aggarwal, Kushagra, et al. “Enhancement of Proximity-Induced Superconductivity in a Planar Ge Hole Gas.” Physical Review Research, vol. 3, no. 2, L022005, American Physical Society, 2021, doi:10.1103/physrevresearch.3.l022005. short: K. Aggarwal, A.C. Hofmann, D. Jirovec, I. Prieto Gonzalez, A. Sammak, M. Botifoll, S. Martí-Sánchez, M. Veldhorst, J. Arbiol, G. Scappucci, J. Danon, G. Katsaros, Physical Review Research 3 (2021). date_created: 2021-12-16T18:50:57Z date_published: 2021-04-15T00:00:00Z date_updated: 2024-02-21T12:41:26Z day: '15' ddc: - '620' department: - _id: GeKa doi: 10.1103/physrevresearch.3.l022005 ec_funded: 1 external_id: arxiv: - '2012.00322' file: - access_level: open_access checksum: 60a1bc9c9b616b1b155044bb8cfc6484 content_type: application/pdf creator: cchlebak date_created: 2021-12-17T08:12:37Z date_updated: 2021-12-17T08:12:37Z file_id: '10561' file_name: 2021_PhysRevResearch_Aggarwal.pdf file_size: 1917512 relation: main_file success: 1 file_date_updated: 2021-12-17T08:12:37Z has_accepted_license: '1' intvolume: ' 3' issue: '2' keyword: - general engineering language: - iso: eng month: '04' oa: 1 oa_version: Published Version project: - _id: 26A151DA-B435-11E9-9278-68D0E5697425 call_identifier: H2020 grant_number: '844511' name: Majorana bound states in Ge/SiGe heterostructures - _id: 237E5020-32DE-11EA-91FC-C7463DDC885E call_identifier: H2020 grant_number: '862046' name: TOPOLOGICALLY PROTECTED AND SCALABLE QUANTUM BITS publication: Physical Review Research publication_identifier: issn: - 2643-1564 publication_status: published publisher: American Physical Society quality_controlled: '1' related_material: record: - id: '8831' relation: earlier_version status: public - id: '8834' relation: research_data status: public scopus_import: '1' status: public title: Enhancement of proximity-induced superconductivity in a planar Ge hole gas tmp: image: /images/cc_by.png legal_code_url: https://creativecommons.org/licenses/by/4.0/legalcode name: Creative Commons Attribution 4.0 International Public License (CC-BY 4.0) short: CC BY (4.0) type: journal_article user_id: 8b945eb4-e2f2-11eb-945a-df72226e66a9 volume: 3 year: '2021' ... --- _id: '8911' abstract: - lang: eng text: "In the worldwide endeavor for disruptive quantum technologies, germanium is emerging as a versatile material to realize devices capable of encoding, processing, or transmitting quantum information. These devices leverage special properties of the germanium valence-band states, commonly known as holes, such as their inherently strong spin-orbit coupling and the ability to host superconducting pairing correlations. In this Review, we initially introduce the physics of holes in low-dimensional germanium structures with key insights from a theoretical perspective. We then examine the material science progress underpinning germanium-based planar heterostructures and nanowires. We review the most significant experimental results demonstrating key building blocks for quantum technology, such as an electrically driven universal quantum gate set with spin qubits in quantum dots and superconductor-semiconductor devices for hybrid quantum systems. We conclude by identifying the most promising prospects\r\ntoward scalable quantum information processing. " acknowledgement: "G.S., M.W.,F.A.Z acknowledge financial support from The Netherlands Organization for Scientific Research (NWO). F.Z., D.L., G.K. acknowledge funding from the European Union’s Horizon 2020 research and innovation programme under Grand Agreement Nr. 862046. G.K. acknowledges funding from FP7 ERC Starting Grant 335497, FWF Y 715-N30, FWF P-30207. S.D. acknowledges support from the European Union’s Horizon 2020 program under Grant\r\nAgreement No. 81050 and from the Agence Nationale de la Recherche through the TOPONANO and CMOSQSPIN projects. J.Z. acknowledges support from the National Key R&D Program of China (Grant No. 2016YFA0301701) and Strategic Priority Research Program of CAS (Grant No. XDB30000000). D.L. and C.K. acknowledge the Swiss National Science Foundation and NCCR QSIT." article_processing_charge: No article_type: original author: - first_name: Giordano full_name: Scappucci, Giordano last_name: Scappucci - first_name: Christoph full_name: Kloeffel, Christoph last_name: Kloeffel - first_name: Floris A. full_name: Zwanenburg, Floris A. last_name: Zwanenburg - first_name: Daniel full_name: Loss, Daniel last_name: Loss - first_name: Maksym full_name: Myronov, Maksym last_name: Myronov - first_name: Jian-Jun full_name: Zhang, Jian-Jun last_name: Zhang - first_name: Silvano De full_name: Franceschi, Silvano De last_name: Franceschi - first_name: Georgios full_name: Katsaros, Georgios id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros orcid: 0000-0001-8342-202X - first_name: Menno full_name: Veldhorst, Menno last_name: Veldhorst citation: ama: Scappucci G, Kloeffel C, Zwanenburg FA, et al. The germanium quantum information route. Nature Reviews Materials. 2021;6:926–943. doi:10.1038/s41578-020-00262-z apa: Scappucci, G., Kloeffel, C., Zwanenburg, F. A., Loss, D., Myronov, M., Zhang, J.-J., … Veldhorst, M. (2021). The germanium quantum information route. Nature Reviews Materials. Springer Nature. https://doi.org/10.1038/s41578-020-00262-z chicago: Scappucci, Giordano, Christoph Kloeffel, Floris A. Zwanenburg, Daniel Loss, Maksym Myronov, Jian-Jun Zhang, Silvano De Franceschi, Georgios Katsaros, and Menno Veldhorst. “The Germanium Quantum Information Route.” Nature Reviews Materials. Springer Nature, 2021. https://doi.org/10.1038/s41578-020-00262-z. ieee: G. Scappucci et al., “The germanium quantum information route,” Nature Reviews Materials, vol. 6. Springer Nature, pp. 926–943, 2021. ista: Scappucci G, Kloeffel C, Zwanenburg FA, Loss D, Myronov M, Zhang J-J, Franceschi SD, Katsaros G, Veldhorst M. 2021. The germanium quantum information route. Nature Reviews Materials. 6, 926–943. mla: Scappucci, Giordano, et al. “The Germanium Quantum Information Route.” Nature Reviews Materials, vol. 6, Springer Nature, 2021, pp. 926–943, doi:10.1038/s41578-020-00262-z. short: G. Scappucci, C. Kloeffel, F.A. Zwanenburg, D. Loss, M. Myronov, J.-J. Zhang, S.D. Franceschi, G. Katsaros, M. Veldhorst, Nature Reviews Materials 6 (2021) 926–943. date_created: 2020-12-02T10:52:51Z date_published: 2021-10-01T00:00:00Z date_updated: 2024-03-07T14:48:57Z day: '01' department: - _id: GeKa doi: 10.1038/s41578-020-00262-z ec_funded: 1 external_id: arxiv: - '2004.08133' isi: - '000600826100003' intvolume: ' 6' isi: 1 language: - iso: eng main_file_link: - open_access: '1' url: https://arxiv.org/abs/2004.08133 month: '10' oa: 1 oa_version: Preprint page: '926–943 ' project: - _id: 25517E86-B435-11E9-9278-68D0E5697425 call_identifier: FP7 grant_number: '335497' name: Towards Spin qubits and Majorana fermions in Germanium selfassembled hut-wires - _id: 2552F888-B435-11E9-9278-68D0E5697425 call_identifier: FWF grant_number: Y00715 name: Loch Spin-Qubits und Majorana-Fermionen in Germanium - _id: 2641CE5E-B435-11E9-9278-68D0E5697425 call_identifier: FWF grant_number: P30207 name: Hole spin orbit qubits in Ge quantum wells publication: Nature Reviews Materials publication_identifier: eissn: - 2058-8437 publication_status: published publisher: Springer Nature quality_controlled: '1' scopus_import: '1' status: public title: The germanium quantum information route type: journal_article user_id: 3E5EF7F0-F248-11E8-B48F-1D18A9856A87 volume: 6 year: '2021' ... --- _id: '8909' abstract: - lang: eng text: Spin qubits are considered to be among the most promising candidates for building a quantum processor. Group IV hole spin qubits have moved into the focus of interest due to the ease of operation and compatibility with Si technology. In addition, Ge offers the option for monolithic superconductor-semiconductor integration. Here we demonstrate a hole spin qubit operating at fields below 10 mT, the critical field of Al, by exploiting the large out-of-plane hole g-factors in planar Ge and by encoding the qubit into the singlet-triplet states of a double quantum dot. We observe electrically controlled X and Z-rotations with tunable frequencies exceeding 100 MHz and dephasing times of 1μs which we extend beyond 15μs with echo techniques. These results show that Ge hole singlet triplet qubits outperform their electronic Si and GaAs based counterparts in speed and coherence, respectively. In addition, they are on par with Ge single spin qubits, but can be operated at much lower fields underlining their potential for on chip integration with superconducting technologies. acknowledged_ssus: - _id: M-Shop - _id: NanoFab acknowledgement: This research was supported by the Scientific Service Units of Institute of Science and Technology (IST) Austria through resources provided by the Miba Machine Shop and the nanofabrication facility, and was made possible with the support of the NOMIS Foundation. This project has received funding from the European Union’s Horizon 2020 research and innovation programme under Marie Sklodowska-Curie grant agreements no. 844511 and no. 75441, and by the Austrian Science Fund FWF-P 30207 project. A.B. acknowledges support from the European Union Horizon 2020 FET project microSPIRE, no. 766955. M. Botifoll and J.A. acknowledge funding from Generalitat de Catalunya 2017 SGR 327. The Catalan Institute of Nanoscience and Nanotechnology (ICN2) is supported by the Severo Ochoa programme from the Spanish Ministery of Economy (MINECO) (grant no. SEV-2017-0706) and is funded by the Catalonian Research Centre (CERCA) Programme, Generalitat de Catalunya. Part of the present work has been performed within the framework of the Universitat Autónoma de Barcelona Materials Science PhD programme. Part of the HAADF scanning transmission electron microscopy was conducted in the Laboratorio de Microscopias Avanzadas at Instituto de Nanociencia de Aragon, Universidad de Zaragoza. ICN2 acknowledge support from the Spanish Superior Council of Scientific Research (CSIC) Research Platform on Quantum Technologies PTI-001. M.B. acknowledges funding from the Catalan Agency for Management of University and Research Grants (AGAUR) Generalitat de Catalunya formation of investigators (FI) PhD grant. article_processing_charge: No article_type: original author: - first_name: Daniel full_name: Jirovec, Daniel id: 4C473F58-F248-11E8-B48F-1D18A9856A87 last_name: Jirovec orcid: 0000-0002-7197-4801 - first_name: Andrea C full_name: Hofmann, Andrea C id: 340F461A-F248-11E8-B48F-1D18A9856A87 last_name: Hofmann - first_name: Andrea full_name: Ballabio, Andrea last_name: Ballabio - first_name: Philipp M. full_name: Mutter, Philipp M. last_name: Mutter - first_name: Giulio full_name: Tavani, Giulio last_name: Tavani - first_name: Marc full_name: Botifoll, Marc last_name: Botifoll - first_name: Alessandro full_name: Crippa, Alessandro id: 1F2B21A2-F6E7-11E9-9B82-F7DBE5697425 last_name: Crippa orcid: 0000-0002-2968-611X - first_name: Josip full_name: Kukucka, Josip id: 3F5D8856-F248-11E8-B48F-1D18A9856A87 last_name: Kukucka - first_name: Oliver full_name: Sagi, Oliver id: 71616374-A8E9-11E9-A7CA-09ECE5697425 last_name: Sagi - first_name: Frederico full_name: Martins, Frederico id: 38F80F9A-1CB8-11EA-BC76-B49B3DDC885E last_name: Martins orcid: 0000-0003-2668-2401 - first_name: Jaime full_name: Saez Mollejo, Jaime id: e0390f72-f6e0-11ea-865d-862393336714 last_name: Saez Mollejo - first_name: Ivan full_name: Prieto Gonzalez, Ivan id: 2A307FE2-F248-11E8-B48F-1D18A9856A87 last_name: Prieto Gonzalez orcid: 0000-0002-7370-5357 - first_name: Maksim full_name: Borovkov, Maksim id: 2ac7a0a2-3562-11eb-9256-fbd18ea55087 last_name: Borovkov - first_name: Jordi full_name: Arbiol, Jordi last_name: Arbiol - first_name: Daniel full_name: Chrastina, Daniel last_name: Chrastina - first_name: Giovanni full_name: Isella, Giovanni last_name: Isella - first_name: Georgios full_name: Katsaros, Georgios id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros orcid: 0000-0001-8342-202X citation: ama: Jirovec D, Hofmann AC, Ballabio A, et al. A singlet triplet hole spin qubit in planar Ge. Nature Materials. 2021;20(8):1106–1112. doi:10.1038/s41563-021-01022-2 apa: Jirovec, D., Hofmann, A. C., Ballabio, A., Mutter, P. M., Tavani, G., Botifoll, M., … Katsaros, G. (2021). A singlet triplet hole spin qubit in planar Ge. Nature Materials. Springer Nature. https://doi.org/10.1038/s41563-021-01022-2 chicago: Jirovec, Daniel, Andrea C Hofmann, Andrea Ballabio, Philipp M. Mutter, Giulio Tavani, Marc Botifoll, Alessandro Crippa, et al. “A Singlet Triplet Hole Spin Qubit in Planar Ge.” Nature Materials. Springer Nature, 2021. https://doi.org/10.1038/s41563-021-01022-2. ieee: D. Jirovec et al., “A singlet triplet hole spin qubit in planar Ge,” Nature Materials, vol. 20, no. 8. Springer Nature, pp. 1106–1112, 2021. ista: Jirovec D, Hofmann AC, Ballabio A, Mutter PM, Tavani G, Botifoll M, Crippa A, Kukucka J, Sagi O, Martins F, Saez Mollejo J, Prieto Gonzalez I, Borovkov M, Arbiol J, Chrastina D, Isella G, Katsaros G. 2021. A singlet triplet hole spin qubit in planar Ge. Nature Materials. 20(8), 1106–1112. mla: Jirovec, Daniel, et al. “A Singlet Triplet Hole Spin Qubit in Planar Ge.” Nature Materials, vol. 20, no. 8, Springer Nature, 2021, pp. 1106–1112, doi:10.1038/s41563-021-01022-2. short: D. Jirovec, A.C. Hofmann, A. Ballabio, P.M. Mutter, G. Tavani, M. Botifoll, A. Crippa, J. Kukucka, O. Sagi, F. Martins, J. Saez Mollejo, I. Prieto Gonzalez, M. Borovkov, J. Arbiol, D. Chrastina, G. Isella, G. Katsaros, Nature Materials 20 (2021) 1106–1112. date_created: 2020-12-02T10:50:47Z date_published: 2021-08-01T00:00:00Z date_updated: 2024-03-28T23:30:27Z day: '01' department: - _id: GeKa - _id: NanoFab - _id: GradSch doi: 10.1038/s41563-021-01022-2 ec_funded: 1 external_id: arxiv: - '2011.13755' isi: - '000657596400001' intvolume: ' 20' isi: 1 issue: '8' language: - iso: eng main_file_link: - open_access: '1' url: https://arxiv.org/abs/2011.13755 month: '08' oa: 1 oa_version: Preprint page: 1106–1112 project: - _id: 26A151DA-B435-11E9-9278-68D0E5697425 call_identifier: H2020 grant_number: '844511' name: Majorana bound states in Ge/SiGe heterostructures - _id: 260C2330-B435-11E9-9278-68D0E5697425 call_identifier: H2020 grant_number: '754411' name: ISTplus - Postdoctoral Fellowships - _id: 2641CE5E-B435-11E9-9278-68D0E5697425 call_identifier: FWF grant_number: P30207 name: Hole spin orbit qubits in Ge quantum wells - _id: 262116AA-B435-11E9-9278-68D0E5697425 name: Hybrid Semiconductor - Superconductor Quantum Devices publication: Nature Materials publication_identifier: eissn: - 1476-4660 issn: - 1476-1122 publication_status: published publisher: Springer Nature quality_controlled: '1' related_material: link: - description: News on IST Homepage relation: press_release url: https://ist.ac.at/en/news/quantum-computing-with-holes/ record: - id: '9323' relation: research_data status: public - id: '10058' relation: dissertation_contains status: public scopus_import: '1' status: public title: A singlet triplet hole spin qubit in planar Ge type: journal_article user_id: 4359f0d1-fa6c-11eb-b949-802e58b17ae8 volume: 20 year: '2021' ... --- _id: '10066' abstract: - lang: eng text: The potential of Si and SiGe-based devices for the scaling of quantum circuits is tainted by device variability. Each device needs to be tuned to operation conditions. We give a key step towards tackling this variability with an algorithm that, without modification, is capable of tuning a 4-gate Si FinFET, a 5-gate GeSi nanowire and a 7-gate SiGe heterostructure double quantum dot device from scratch. We achieve tuning times of 30, 10, and 92 minutes, respectively. The algorithm also provides insight into the parameter space landscape for each of these devices. These results show that overarching solutions for the tuning of quantum devices are enabled by machine learning. acknowledged_ssus: - _id: NanoFab acknowledgement: "We acknowledge Ang Li, Erik P. A. M. Bakkers (University of Eindhoven) for the fabrication of the Ge/Si nanowire. This work was supported by the Royal Society, the EPSRC National Quantum Technology Hub in Networked Quantum Information Technology (EP/M013243/1), Quantum Technology Capital (EP/N014995/1), EPSRC Platform Grant\r\n(EP/R029229/1), the European Research Council (Grant agreement 948932), the Swiss Nanoscience Institute, the\r\nNCCR SPIN, the EU H2020 European Microkelvin Platform EMP grant No. 824109, the Scientific Service Units\r\nof IST Austria through resources provided by the nanofabrication facility and, the FWF-P30207 project. This publication was also made possible through support from Templeton World Charity Foundation and John Templeton Foundation. The opinions expressed in this publication are those of the authors and do not necessarily reflect the views of the Templeton Foundations." article_number: '2107.12975' article_processing_charge: No author: - first_name: B. full_name: Severin, B. last_name: Severin - first_name: D. T. full_name: Lennon, D. T. last_name: Lennon - first_name: L. C. full_name: Camenzind, L. C. last_name: Camenzind - first_name: F. full_name: Vigneau, F. last_name: Vigneau - first_name: F. full_name: Fedele, F. last_name: Fedele - first_name: Daniel full_name: Jirovec, Daniel id: 4C473F58-F248-11E8-B48F-1D18A9856A87 last_name: Jirovec orcid: 0000-0002-7197-4801 - first_name: A. full_name: Ballabio, A. last_name: Ballabio - first_name: D. full_name: Chrastina, D. last_name: Chrastina - first_name: G. full_name: Isella, G. last_name: Isella - first_name: M. de full_name: Kruijf, M. de last_name: Kruijf - first_name: M. J. full_name: Carballido, M. J. last_name: Carballido - first_name: S. full_name: Svab, S. last_name: Svab - first_name: A. V. full_name: Kuhlmann, A. V. last_name: Kuhlmann - first_name: F. R. full_name: Braakman, F. R. last_name: Braakman - first_name: S. full_name: Geyer, S. last_name: Geyer - first_name: F. N. M. full_name: Froning, F. N. M. last_name: Froning - first_name: H. full_name: Moon, H. last_name: Moon - first_name: M. A. full_name: Osborne, M. A. last_name: Osborne - first_name: D. full_name: Sejdinovic, D. last_name: Sejdinovic - first_name: Georgios full_name: Katsaros, Georgios id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros orcid: 0000-0001-8342-202X - first_name: D. M. full_name: Zumbühl, D. M. last_name: Zumbühl - first_name: G. A. D. full_name: Briggs, G. A. D. last_name: Briggs - first_name: N. full_name: Ares, N. last_name: Ares citation: ama: Severin B, Lennon DT, Camenzind LC, et al. Cross-architecture tuning of silicon and SiGe-based quantum devices using machine learning. arXiv. doi:10.48550/arXiv.2107.12975 apa: Severin, B., Lennon, D. T., Camenzind, L. C., Vigneau, F., Fedele, F., Jirovec, D., … Ares, N. (n.d.). Cross-architecture tuning of silicon and SiGe-based quantum devices using machine learning. arXiv. https://doi.org/10.48550/arXiv.2107.12975 chicago: Severin, B., D. T. Lennon, L. C. Camenzind, F. Vigneau, F. Fedele, Daniel Jirovec, A. Ballabio, et al. “Cross-Architecture Tuning of Silicon and SiGe-Based Quantum Devices Using Machine Learning.” ArXiv, n.d. https://doi.org/10.48550/arXiv.2107.12975. ieee: B. Severin et al., “Cross-architecture tuning of silicon and SiGe-based quantum devices using machine learning,” arXiv. . ista: Severin B, Lennon DT, Camenzind LC, Vigneau F, Fedele F, Jirovec D, Ballabio A, Chrastina D, Isella G, Kruijf M de, Carballido MJ, Svab S, Kuhlmann AV, Braakman FR, Geyer S, Froning FNM, Moon H, Osborne MA, Sejdinovic D, Katsaros G, Zumbühl DM, Briggs GAD, Ares N. Cross-architecture tuning of silicon and SiGe-based quantum devices using machine learning. arXiv, 2107.12975. mla: Severin, B., et al. “Cross-Architecture Tuning of Silicon and SiGe-Based Quantum Devices Using Machine Learning.” ArXiv, 2107.12975, doi:10.48550/arXiv.2107.12975. short: B. Severin, D.T. Lennon, L.C. Camenzind, F. Vigneau, F. Fedele, D. Jirovec, A. Ballabio, D. Chrastina, G. Isella, M. de Kruijf, M.J. Carballido, S. Svab, A.V. Kuhlmann, F.R. Braakman, S. Geyer, F.N.M. Froning, H. Moon, M.A. Osborne, D. Sejdinovic, G. Katsaros, D.M. Zumbühl, G.A.D. Briggs, N. Ares, ArXiv (n.d.). date_created: 2021-10-01T12:40:22Z date_published: 2021-07-27T00:00:00Z date_updated: 2024-03-28T23:30:27Z day: '27' department: - _id: GeKa doi: 10.48550/arXiv.2107.12975 external_id: arxiv: - '2107.12975' language: - iso: eng main_file_link: - open_access: '1' url: https://doi.org/10.48550/arXiv.2107.12975 month: '07' oa: 1 oa_version: Preprint project: - _id: 2641CE5E-B435-11E9-9278-68D0E5697425 call_identifier: FWF grant_number: P30207 name: Hole spin orbit qubits in Ge quantum wells publication: arXiv publication_status: submitted related_material: record: - id: '10058' relation: dissertation_contains status: public status: public title: Cross-architecture tuning of silicon and SiGe-based quantum devices using machine learning type: preprint user_id: 2DF688A6-F248-11E8-B48F-1D18A9856A87 year: '2021' ... --- _id: '8834' abstract: - lang: eng text: "This data collection contains the transport data for figures presented in the supplementary material of \"Enhancement of Proximity Induced Superconductivity in Planar Germanium\" by K. Aggarwal, et. al. \r\nThe measurements were done using Labber Software and the data is stored in the hdf5 file format. The files can be opened using either the Labber Log Browser (https://labber.org/overview/) or Labber Python API (http://labber.org/online-doc/api/LogFile.html).\r\n" article_processing_charge: No author: - first_name: Georgios full_name: Katsaros, Georgios id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros orcid: 0000-0001-8342-202X citation: ama: Katsaros G. Enhancement of proximity induced superconductivity in planar Germanium. 2020. doi:10.15479/AT:ISTA:8834 apa: Katsaros, G. (2020). Enhancement of proximity induced superconductivity in planar Germanium. Institute of Science and Technology Austria. https://doi.org/10.15479/AT:ISTA:8834 chicago: Katsaros, Georgios. “Enhancement of Proximity Induced Superconductivity in Planar Germanium.” Institute of Science and Technology Austria, 2020. https://doi.org/10.15479/AT:ISTA:8834. ieee: G. Katsaros, “Enhancement of proximity induced superconductivity in planar Germanium.” Institute of Science and Technology Austria, 2020. ista: Katsaros G. 2020. Enhancement of proximity induced superconductivity in planar Germanium, Institute of Science and Technology Austria, 10.15479/AT:ISTA:8834. mla: Katsaros, Georgios. Enhancement of Proximity Induced Superconductivity in Planar Germanium. Institute of Science and Technology Austria, 2020, doi:10.15479/AT:ISTA:8834. short: G. Katsaros, (2020). contributor: - contributor_type: project_member first_name: Kushagra id: b22ab905-3539-11eb-84c3-fc159dcd79cb last_name: Aggarwal - contributor_type: project_member first_name: Andrea C id: 340F461A-F248-11E8-B48F-1D18A9856A87 last_name: Hofmann - contributor_type: project_member first_name: Daniel id: 4C473F58-F248-11E8-B48F-1D18A9856A87 last_name: Jirovec - contributor_type: project_member first_name: Ivan id: 2A307FE2-F248-11E8-B48F-1D18A9856A87 last_name: Prieto Gonzalez - contributor_type: project_member first_name: Amir last_name: Sammak - contributor_type: project_member first_name: Marc last_name: Botifoll - contributor_type: project_member first_name: Sara last_name: Marti-Sanchez - contributor_type: project_member first_name: Menno last_name: Veldhorst - contributor_type: project_member first_name: Jordi last_name: Arbiol - contributor_type: project_member first_name: Giordano last_name: Scappucci - contributor_type: project_leader first_name: Georgios id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros date_created: 2020-12-02T10:49:30Z date_published: 2020-12-02T00:00:00Z date_updated: 2024-02-21T12:41:26Z day: '02' ddc: - '530' department: - _id: GeKa doi: 10.15479/AT:ISTA:8834 file: - access_level: open_access checksum: 898607ac9d7cfbd5c7dd84bcb6d8a924 content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:21Z date_updated: 2020-12-02T10:46:21Z file_id: '8836' file_name: Figure1-ICvsVG.hdf5 file_size: 898039 relation: main_file success: 1 - access_level: open_access checksum: f6f5888f8425e82b4dcd5ec3db9162a6 content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:21Z date_updated: 2020-12-02T10:46:21Z file_id: '8837' file_name: Figure1-RNvsVG.hdf5 file_size: 184971 relation: main_file success: 1 - access_level: open_access checksum: 63a26c4b0299538610ec58c48c0ab1e3 content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:22Z date_updated: 2020-12-02T10:46:22Z file_id: '8838' file_name: Figure2-MAR.hdf5 file_size: 2097740 relation: main_file success: 1 - access_level: open_access checksum: 4c6795b64b05088606ab7881f801acd7 content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:22Z date_updated: 2020-12-02T10:46:22Z file_id: '8839' file_name: Figure3-Fraunhofer.hdf5 file_size: 911501 relation: main_file success: 1 - access_level: open_access checksum: 6b1b07e8ab0d6c1fead91032bf543818 content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:22Z date_updated: 2020-12-02T10:46:22Z file_id: '8840' file_name: Figure3-ICvsBparallel.hdf5 file_size: 384239 relation: main_file success: 1 - access_level: open_access checksum: d825f77f57cbf455a4ac48afeec27f5b content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:22Z date_updated: 2020-12-02T10:46:22Z file_id: '8841' file_name: Figure3-ICvsBperp.hdf5 file_size: 942878 relation: main_file success: 1 - access_level: open_access checksum: ec81afc3697da097a224e9142322243c content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:22Z date_updated: 2020-12-02T10:46:22Z file_id: '8842' file_name: Figure4-CPR.hdf5 file_size: 623246 relation: main_file success: 1 - access_level: open_access checksum: ca5860a8850a6874312c4ca1d7d41013 content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:22Z date_updated: 2020-12-02T10:46:22Z file_id: '8843' file_name: Figure4-SQUID.hdf5 file_size: 507164 relation: main_file success: 1 - access_level: open_access checksum: 770721205d081c847316d9122c94eb9b content_type: text/plain creator: gkatsaro date_created: 2020-12-02T10:46:22Z date_updated: 2020-12-02T10:46:22Z file_id: '8844' file_name: Readme.txt file_size: 1573 relation: main_file success: 1 - access_level: open_access checksum: 5e2e407ca631fb15b8c3cc51c5dd3bdb content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:22Z date_updated: 2020-12-02T10:46:22Z file_id: '8845' file_name: Figure S5-ICvsVG.hdf5 file_size: 842702 relation: main_file success: 1 - access_level: open_access checksum: 2076e5f68264ed76c297811f449d768d content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:22Z date_updated: 2020-12-02T10:46:22Z file_id: '8846' file_name: Figure S5-RNvsVG.hdf5 file_size: 208921 relation: main_file success: 1 - access_level: open_access checksum: 5dccb801d694749fe8cb496821f12f79 content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:22Z date_updated: 2020-12-02T10:46:22Z file_id: '8847' file_name: Figure S8-ICvsVG.hdf5 file_size: 912249 relation: main_file success: 1 - access_level: open_access checksum: 2b104aee4276e594c0d50557ead36441 content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:22Z date_updated: 2020-12-02T10:46:22Z file_id: '8848' file_name: Figure S8-RNvsVG.hdf5 file_size: 230550 relation: main_file success: 1 - access_level: open_access checksum: 1645b03bdc6999d120c3fcc7012c6984 content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:23Z date_updated: 2020-12-02T10:46:23Z file_id: '8849' file_name: Figure S9-JoFET1-Fraunhofer.hdf5 file_size: 533581 relation: main_file success: 1 - access_level: open_access checksum: 7ba623bbee93e8cb5645c4866f241d43 content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:23Z date_updated: 2020-12-02T10:46:23Z file_id: '8850' file_name: Figure S9-JoFET1-ICvsVG.hdf5 file_size: 1394384 relation: main_file success: 1 - access_level: open_access checksum: 3b65ccb68cea8d3c30832fc77aa9eea3 content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:23Z date_updated: 2020-12-02T10:46:23Z file_id: '8851' file_name: Figure S9-JoFET2-Fraunhofer.hdf5 file_size: 548051 relation: main_file success: 1 - access_level: open_access checksum: 3d7394a7bc8ff08bcc7928262514d2b9 content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:23Z date_updated: 2020-12-02T10:46:23Z file_id: '8852' file_name: Figure S9-JoFET2-ICvsVG.hdf5 file_size: 112602 relation: main_file success: 1 - access_level: open_access checksum: 2ef8b3226a99fc65cad1162a52552848 content_type: text/plain creator: gkatsaro date_created: 2020-12-02T10:46:23Z date_updated: 2020-12-02T10:46:23Z file_id: '8853' file_name: Readme.txt file_size: 1449 relation: main_file success: 1 - access_level: open_access checksum: 361ef6521f6b23223a34f8cf9645ee68 content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:23Z date_updated: 2020-12-02T10:46:23Z file_id: '8854' file_name: dev2-jj2-ICvsVG-Tdependence_1000mK.hdf5 file_size: 149502 relation: main_file success: 1 - access_level: open_access checksum: f8ff5a6dd64d68d55daa79a4145bbd9c content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:23Z date_updated: 2020-12-02T10:46:23Z file_id: '8855' file_name: dev2-jj2-ICvsVG-Tdependence_100mK.hdf5 file_size: 167055 relation: main_file success: 1 - access_level: open_access checksum: f9309e1f1a5f727281960b01a3be64b4 content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:23Z date_updated: 2020-12-02T10:46:23Z file_id: '8856' file_name: dev2-jj2-ICvsVG-Tdependence_1100mK.hdf5 file_size: 149648 relation: main_file success: 1 - access_level: open_access checksum: e0589a34db4c5b7643c8179b0c156e48 content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:23Z date_updated: 2020-12-02T10:46:23Z file_id: '8857' file_name: dev2-jj2-ICvsVG-Tdependence_1200mK.hdf5 file_size: 144688 relation: main_file success: 1 - access_level: open_access checksum: f9736851466851cca596124b1ccdbe01 content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:23Z date_updated: 2020-12-02T10:46:23Z file_id: '8858' file_name: dev2-jj2-ICvsVG-Tdependence_125mK.hdf5 file_size: 148611 relation: main_file success: 1 - access_level: open_access checksum: d517a4781bb242f7bfb75e7c054131e4 content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:23Z date_updated: 2020-12-02T10:46:23Z file_id: '8859' file_name: dev2-jj2-ICvsVG-Tdependence_1300mK.hdf5 file_size: 144702 relation: main_file success: 1 - access_level: open_access checksum: ce1dafef1008405b7d63b9d9018bba0d content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:23Z date_updated: 2020-12-02T10:46:23Z file_id: '8860' file_name: dev2-jj2-ICvsVG-Tdependence_1400mK.hdf5 file_size: 150639 relation: main_file success: 1 - access_level: open_access checksum: 0a13039fdb83caee41437685fe73d2b4 content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:23Z date_updated: 2020-12-02T10:46:23Z file_id: '8861' file_name: dev2-jj2-ICvsVG-Tdependence_1500mK.hdf5 file_size: 150819 relation: main_file success: 1 - access_level: open_access checksum: 6e543bc92d4dd4b9b2fcfd7992bfa101 content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:24Z date_updated: 2020-12-02T10:46:24Z file_id: '8862' file_name: dev2-jj2-ICvsVG-Tdependence_150mK.hdf5 file_size: 148362 relation: main_file success: 1 - access_level: open_access checksum: 91cfcef1edfbb5c7bed3dde4b2cee5b8 content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:24Z date_updated: 2020-12-02T10:46:24Z file_id: '8863' file_name: dev2-jj2-ICvsVG-Tdependence_1600mK.hdf5 file_size: 150766 relation: main_file success: 1 - access_level: open_access checksum: 528fa8c3128e0d79de599ba0bc715665 content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:24Z date_updated: 2020-12-02T10:46:24Z file_id: '8864' file_name: dev2-jj2-ICvsVG-Tdependence_1700mK.hdf5 file_size: 169554 relation: main_file success: 1 - access_level: open_access checksum: 9e35c7f20c0b162e205bfa520dc4535d content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:24Z date_updated: 2020-12-02T10:46:24Z file_id: '8865' file_name: dev2-jj2-ICvsVG-Tdependence_175mK.hdf5 file_size: 148548 relation: main_file success: 1 - access_level: open_access checksum: 1fb5a8b651447a7204ae31883a1da269 content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:24Z date_updated: 2020-12-02T10:46:24Z file_id: '8866' file_name: dev2-jj2-ICvsVG-Tdependence_1800mK.hdf5 file_size: 147386 relation: main_file success: 1 - access_level: open_access checksum: 0d3ee65697bceaae15fbcd5d5a8480c1 content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:24Z date_updated: 2020-12-02T10:46:24Z file_id: '8867' file_name: dev2-jj2-ICvsVG-Tdependence_1900mK.hdf5 file_size: 147265 relation: main_file success: 1 - access_level: open_access checksum: fc386694414fee55a21adbc21c5c9b35 content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:24Z date_updated: 2020-12-02T10:46:24Z file_id: '8868' file_name: dev2-jj2-ICvsVG-Tdependence_2000mK.hdf5 file_size: 147371 relation: main_file success: 1 - access_level: open_access checksum: de7c4a302b9fbad6dbcd7dd76af9f585 content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:24Z date_updated: 2020-12-02T10:46:24Z file_id: '8869' file_name: dev2-jj2-ICvsVG-Tdependence_200mK.hdf5 file_size: 148576 relation: main_file success: 1 - access_level: open_access checksum: 3f31eb2fb17cdaa70f4f3de2f1c6a563 content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:24Z date_updated: 2020-12-02T10:46:24Z file_id: '8870' file_name: dev2-jj2-ICvsVG-Tdependence_20mK.hdf5 file_size: 183004 relation: main_file success: 1 - access_level: open_access checksum: 9044e65b660b5a90931ddcc0d4da7baa content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:24Z date_updated: 2020-12-02T10:46:24Z file_id: '8871' file_name: dev2-jj2-ICvsVG-Tdependence_2100mK.hdf5 file_size: 131582 relation: main_file success: 1 - access_level: open_access checksum: a4d0644bed0076a5c3a9b10dadac217a content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:24Z date_updated: 2020-12-02T10:46:24Z file_id: '8872' file_name: dev2-jj2-ICvsVG-Tdependence_2200mK.hdf5 file_size: 131645 relation: main_file success: 1 - access_level: open_access checksum: 7177bd4d5bd80655b513168ebdf4a0c6 content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:24Z date_updated: 2020-12-02T10:46:24Z file_id: '8873' file_name: dev2-jj2-ICvsVG-Tdependence_225mK.hdf5 file_size: 144366 relation: main_file success: 1 - access_level: open_access checksum: 62e51c2cabcb586af21222e60eb8910e content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:24Z date_updated: 2020-12-02T10:46:24Z file_id: '8874' file_name: dev2-jj2-ICvsVG-Tdependence_2300mK.hdf5 file_size: 148466 relation: main_file success: 1 - access_level: open_access checksum: 67f943fbaae90d117f0f82c3a29e6ccc content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:25Z date_updated: 2020-12-02T10:46:25Z file_id: '8875' file_name: dev2-jj2-ICvsVG-Tdependence_2400mK.hdf5 file_size: 160774 relation: main_file success: 1 - access_level: open_access checksum: c6b33f7c61ba57178fa613c58131fd3d content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:25Z date_updated: 2020-12-02T10:46:25Z file_id: '8876' file_name: dev2-jj2-ICvsVG-Tdependence_2500mK.hdf5 file_size: 150110 relation: main_file success: 1 - access_level: open_access checksum: be127426947b8778cfae29a7ad2013f1 content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:25Z date_updated: 2020-12-02T10:46:25Z file_id: '8877' file_name: dev2-jj2-ICvsVG-Tdependence_250mK.hdf5 file_size: 144419 relation: main_file success: 1 - access_level: open_access checksum: 81dfeb4d94c1efec10b623e94d13faa5 content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:25Z date_updated: 2020-12-02T10:46:25Z file_id: '8878' file_name: dev2-jj2-ICvsVG-Tdependence_2600mK.hdf5 file_size: 148905 relation: main_file success: 1 - access_level: open_access checksum: 5c0a37e0de317c7d8df62075ff35f1ec content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:25Z date_updated: 2020-12-02T10:46:25Z file_id: '8879' file_name: dev2-jj2-ICvsVG-Tdependence_2700mK.hdf5 file_size: 131966 relation: main_file success: 1 - access_level: open_access checksum: 0f25d03f2551cbd903c7522883510492 content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:25Z date_updated: 2020-12-02T10:46:25Z file_id: '8880' file_name: dev2-jj2-ICvsVG-Tdependence_275mK.hdf5 file_size: 144253 relation: main_file success: 1 - access_level: open_access checksum: 93923640d8bb599f6a459d2fda915b8b content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:25Z date_updated: 2020-12-02T10:46:25Z file_id: '8881' file_name: dev2-jj2-ICvsVG-Tdependence_2800mK.hdf5 file_size: 131997 relation: main_file success: 1 - access_level: open_access checksum: c4fcf44e88ed344f4b747a67cae4e147 content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:25Z date_updated: 2020-12-02T10:46:25Z file_id: '8882' file_name: dev2-jj2-ICvsVG-Tdependence_2900mK.hdf5 file_size: 131950 relation: main_file success: 1 - access_level: open_access checksum: 5c1b296c6e654b16f610516b4a2fae30 content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:25Z date_updated: 2020-12-02T10:46:25Z file_id: '8883' file_name: dev2-jj2-ICvsVG-Tdependence_3000mK.hdf5 file_size: 150616 relation: main_file success: 1 - access_level: open_access checksum: 5d1a2735216b1d6abf4c2645ebe0164e content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:25Z date_updated: 2020-12-02T10:46:25Z file_id: '8884' file_name: dev2-jj2-ICvsVG-Tdependence_300mK.hdf5 file_size: 144570 relation: main_file success: 1 - access_level: open_access checksum: 50dd9572cee3262ab4d64573289f9832 content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:25Z date_updated: 2020-12-02T10:46:25Z file_id: '8885' file_name: dev2-jj2-ICvsVG-Tdependence_3100mK.hdf5 file_size: 150709 relation: main_file success: 1 - access_level: open_access checksum: f528a1daeaddef5deef914798f5569ec content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:25Z date_updated: 2020-12-02T10:46:25Z file_id: '8886' file_name: dev2-jj2-ICvsVG-Tdependence_3200mK.hdf5 file_size: 131954 relation: main_file success: 1 - access_level: open_access checksum: c2f53134c6877f200bdf4e5638e5c6d3 content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:25Z date_updated: 2020-12-02T10:46:25Z file_id: '8887' file_name: dev2-jj2-ICvsVG-Tdependence_325mK.hdf5 file_size: 144197 relation: main_file success: 1 - access_level: open_access checksum: 10dd70f340df3bbe0cfe8cc9e6427d50 content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:25Z date_updated: 2020-12-02T10:46:25Z file_id: '8888' file_name: dev2-jj2-ICvsVG-Tdependence_360mK.hdf5 file_size: 144729 relation: main_file success: 1 - access_level: open_access checksum: 6da19e1e3ff6f254ce859a2c6952fd3a content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:26Z date_updated: 2020-12-02T10:46:26Z file_id: '8889' file_name: dev2-jj2-ICvsVG-Tdependence_400mK.hdf5 file_size: 144502 relation: main_file success: 1 - access_level: open_access checksum: 49b78d23ef1538e1ecfc51dcfcf423d4 content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:26Z date_updated: 2020-12-02T10:46:26Z file_id: '8890' file_name: dev2-jj2-ICvsVG-Tdependence_430mK.hdf5 file_size: 144280 relation: main_file success: 1 - access_level: open_access checksum: 065610415e2386a6e571fce3f14a2fc4 content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:26Z date_updated: 2020-12-02T10:46:26Z file_id: '8891' file_name: dev2-jj2-ICvsVG-Tdependence_45mK.hdf5 file_size: 173158 relation: main_file success: 1 - access_level: open_access checksum: 06a83873a1e72377728c080fb8db15fd content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:26Z date_updated: 2020-12-02T10:46:26Z file_id: '8892' file_name: dev2-jj2-ICvsVG-Tdependence_460mK.hdf5 file_size: 144447 relation: main_file success: 1 - access_level: open_access checksum: c4391fda28b9a44e44f2d039ec8651b7 content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:26Z date_updated: 2020-12-02T10:46:26Z file_id: '8893' file_name: dev2-jj2-ICvsVG-Tdependence_500mK.hdf5 file_size: 144800 relation: main_file success: 1 - access_level: open_access checksum: e9d2ffde84357e8e0be5581408da9b8a content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:26Z date_updated: 2020-12-02T10:46:26Z file_id: '8894' file_name: dev2-jj2-ICvsVG-Tdependence_530mK.hdf5 file_size: 144594 relation: main_file success: 1 - access_level: open_access checksum: d2966be14e8877ca27bf5daff23d76d6 content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:26Z date_updated: 2020-12-02T10:46:26Z file_id: '8895' file_name: dev2-jj2-ICvsVG-Tdependence_560mK.hdf5 file_size: 144681 relation: main_file success: 1 - access_level: open_access checksum: 75cc9b9a2991b356471ca956076cc376 content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:26Z date_updated: 2020-12-02T10:46:26Z file_id: '8896' file_name: dev2-jj2-ICvsVG-Tdependence_600mK.hdf5 file_size: 144909 relation: main_file success: 1 - access_level: open_access checksum: 9144cff758563b93f22c7946146fa5d5 content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:26Z date_updated: 2020-12-02T10:46:26Z file_id: '8897' file_name: dev2-jj2-ICvsVG-Tdependence_630mK.hdf5 file_size: 144985 relation: main_file success: 1 - access_level: open_access checksum: 14509a2dd1bf74d9c6fc05c046e5b6ff content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:26Z date_updated: 2020-12-02T10:46:26Z file_id: '8898' file_name: dev2-jj2-ICvsVG-Tdependence_660mK.hdf5 file_size: 144782 relation: main_file success: 1 - access_level: open_access checksum: 9c38e2178f0fda99a02e6d7b2c034082 content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:26Z date_updated: 2020-12-02T10:46:26Z file_id: '8899' file_name: dev2-jj2-ICvsVG-Tdependence_700mK.hdf5 file_size: 145046 relation: main_file success: 1 - access_level: open_access checksum: 962a205f7ff515b9aad2df28cc5a95e7 content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:26Z date_updated: 2020-12-02T10:46:26Z file_id: '8900' file_name: dev2-jj2-ICvsVG-Tdependence_730mK.hdf5 file_size: 145107 relation: main_file success: 1 - access_level: open_access checksum: 5e24b1a7840e6a2b3b04bf922b521ec4 content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:26Z date_updated: 2020-12-02T10:46:26Z file_id: '8901' file_name: dev2-jj2-ICvsVG-Tdependence_760mK.hdf5 file_size: 145018 relation: main_file success: 1 - access_level: open_access checksum: dfbefc2d53df7afd1e534ced7d669b30 content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:27Z date_updated: 2020-12-02T10:46:27Z file_id: '8902' file_name: dev2-jj2-ICvsVG-Tdependence_800mK.hdf5 file_size: 145318 relation: main_file success: 1 - access_level: open_access checksum: 1629ae97d2748bbf02fdb2d165d236e5 content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:27Z date_updated: 2020-12-02T10:46:27Z file_id: '8903' file_name: dev2-jj2-ICvsVG-Tdependence_830mK.hdf5 file_size: 145322 relation: main_file success: 1 - access_level: open_access checksum: 618f507780343c6b9145c40d3d5b0ff0 content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:27Z date_updated: 2020-12-02T10:46:27Z file_id: '8904' file_name: dev2-jj2-ICvsVG-Tdependence_850mK.hdf5 file_size: 145282 relation: main_file success: 1 - access_level: open_access checksum: 7547c3607280c7eedca3168854976cc9 content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:27Z date_updated: 2020-12-02T10:46:27Z file_id: '8905' file_name: dev2-jj2-ICvsVG-Tdependence_900mK.hdf5 file_size: 143681 relation: main_file success: 1 - access_level: open_access checksum: 514d9a43ed3888ce7d8b26ca772cadc3 content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:27Z date_updated: 2020-12-02T10:46:27Z file_id: '8906' file_name: dev2-jj2-ICvsVG-Tdependence_90mK.hdf5 file_size: 167184 relation: main_file success: 1 - access_level: open_access checksum: 77285471178fa68c1eade48761b2aba5 content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:27Z date_updated: 2020-12-02T10:46:27Z file_id: '8907' file_name: dev2-jj2-ICvsVG-Tdependence_930mK.hdf5 file_size: 143491 relation: main_file success: 1 - access_level: open_access checksum: bf8da09fcfa20196fb7e65528a581297 content_type: application/octet-stream creator: gkatsaro date_created: 2020-12-02T10:46:27Z date_updated: 2020-12-02T10:46:27Z file_id: '8908' file_name: dev2-jj2-ICvsVG-Tdependence_965mK.hdf5 file_size: 144057 relation: main_file success: 1 file_date_updated: 2020-12-02T10:46:27Z has_accepted_license: '1' month: '12' oa: 1 oa_version: Published Version publisher: Institute of Science and Technology Austria related_material: record: - id: '10559' relation: used_in_publication status: public - id: '8831' relation: used_in_publication status: public status: public title: Enhancement of proximity induced superconductivity in planar Germanium tmp: image: /images/cc_0.png legal_code_url: https://creativecommons.org/publicdomain/zero/1.0/legalcode name: Creative Commons Public Domain Dedication (CC0 1.0) short: CC0 (1.0) type: research_data user_id: 2DF688A6-F248-11E8-B48F-1D18A9856A87 year: '2020' ... --- _id: '7541' abstract: - lang: eng text: Semiconductor nanowires have been playing a crucial role in the development of nanoscale devices for the realization of spin qubits, Majorana fermions, single photon emitters, nanoprocessors, etc. The monolithic growth of site‐controlled nanowires is a prerequisite toward the next generation of devices that will require addressability and scalability. Here, combining top‐down nanofabrication and bottom‐up self‐assembly, the growth of Ge wires on prepatterned Si (001) substrates with controllable position, distance, length, and structure is reported. This is achieved by a novel growth process that uses a SiGe strain‐relaxation template and can be potentially generalized to other material combinations. Transport measurements show an electrically tunable spin–orbit coupling, with a spin–orbit length similar to that of III–V materials. Also, charge sensing between quantum dots in closely spaced wires is observed, which underlines their potential for the realization of advanced quantum devices. The reported results open a path toward scalable qubit devices using nanowires on silicon. acknowledged_ssus: - _id: NanoFab - _id: M-Shop acknowledgement: 'This work was supported by the National Key R&D Program of China (Grant Nos. 2016YFA0301701 and 2016YFA0300600), the NSFC (Grant Nos. 11574356, 11434010, and 11404252), the Strategic Priority Research Program of CAS (Grant No. XDB30000000), the ERC Starting Grant No. 335497, the FWF P32235 project, and the European Union''s Horizon 2020 research and innovation program under Grant Agreement #862046. This research was supported by the Scientific Service Units of IST Austria through resources provided by the MIBA Machine Shop and the nanofabrication facility. F.L. thanks support from DOE (Grant No. DE‐FG02‐04ER46148). H.H. thanks the Startup Funding from Xi''an Jiaotong University.' article_number: '1906523' article_processing_charge: Yes (via OA deal) article_type: original author: - first_name: Fei full_name: Gao, Fei last_name: Gao - first_name: Jian-Huan full_name: Wang, Jian-Huan last_name: Wang - first_name: Hannes full_name: Watzinger, Hannes id: 35DF8E50-F248-11E8-B48F-1D18A9856A87 last_name: Watzinger - first_name: Hao full_name: Hu, Hao last_name: Hu - first_name: Marko J. full_name: Rančić, Marko J. last_name: Rančić - first_name: Jie-Yin full_name: Zhang, Jie-Yin last_name: Zhang - first_name: Ting full_name: Wang, Ting last_name: Wang - first_name: Yuan full_name: Yao, Yuan last_name: Yao - first_name: Gui-Lei full_name: Wang, Gui-Lei last_name: Wang - first_name: Josip full_name: Kukucka, Josip id: 3F5D8856-F248-11E8-B48F-1D18A9856A87 last_name: Kukucka - first_name: Lada full_name: Vukušić, Lada id: 31E9F056-F248-11E8-B48F-1D18A9856A87 last_name: Vukušić orcid: 0000-0003-2424-8636 - first_name: Christoph full_name: Kloeffel, Christoph last_name: Kloeffel - first_name: Daniel full_name: Loss, Daniel last_name: Loss - first_name: Feng full_name: Liu, Feng last_name: Liu - first_name: Georgios full_name: Katsaros, Georgios id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros orcid: 0000-0001-8342-202X - first_name: Jian-Jun full_name: Zhang, Jian-Jun last_name: Zhang citation: ama: Gao F, Wang J-H, Watzinger H, et al. Site-controlled uniform Ge/Si hut wires with electrically tunable spin-orbit coupling. Advanced Materials. 2020;32(16). doi:10.1002/adma.201906523 apa: Gao, F., Wang, J.-H., Watzinger, H., Hu, H., Rančić, M. J., Zhang, J.-Y., … Zhang, J.-J. (2020). Site-controlled uniform Ge/Si hut wires with electrically tunable spin-orbit coupling. Advanced Materials. Wiley. https://doi.org/10.1002/adma.201906523 chicago: Gao, Fei, Jian-Huan Wang, Hannes Watzinger, Hao Hu, Marko J. Rančić, Jie-Yin Zhang, Ting Wang, et al. “Site-Controlled Uniform Ge/Si Hut Wires with Electrically Tunable Spin-Orbit Coupling.” Advanced Materials. Wiley, 2020. https://doi.org/10.1002/adma.201906523. ieee: F. Gao et al., “Site-controlled uniform Ge/Si hut wires with electrically tunable spin-orbit coupling,” Advanced Materials, vol. 32, no. 16. Wiley, 2020. ista: Gao F, Wang J-H, Watzinger H, Hu H, Rančić MJ, Zhang J-Y, Wang T, Yao Y, Wang G-L, Kukucka J, Vukušić L, Kloeffel C, Loss D, Liu F, Katsaros G, Zhang J-J. 2020. Site-controlled uniform Ge/Si hut wires with electrically tunable spin-orbit coupling. Advanced Materials. 32(16), 1906523. mla: Gao, Fei, et al. “Site-Controlled Uniform Ge/Si Hut Wires with Electrically Tunable Spin-Orbit Coupling.” Advanced Materials, vol. 32, no. 16, 1906523, Wiley, 2020, doi:10.1002/adma.201906523. short: F. Gao, J.-H. Wang, H. Watzinger, H. Hu, M.J. Rančić, J.-Y. Zhang, T. Wang, Y. Yao, G.-L. Wang, J. Kukucka, L. Vukušić, C. Kloeffel, D. Loss, F. Liu, G. Katsaros, J.-J. Zhang, Advanced Materials 32 (2020). date_created: 2020-02-28T09:47:00Z date_published: 2020-04-23T00:00:00Z date_updated: 2024-02-21T12:42:12Z day: '23' ddc: - '530' department: - _id: GeKa doi: 10.1002/adma.201906523 ec_funded: 1 external_id: isi: - '000516660900001' file: - access_level: open_access checksum: c622737dc295972065782558337124a2 content_type: application/pdf creator: dernst date_created: 2020-11-20T10:11:35Z date_updated: 2020-11-20T10:11:35Z file_id: '8782' file_name: 2020_AdvancedMaterials_Gao.pdf file_size: 5242880 relation: main_file success: 1 file_date_updated: 2020-11-20T10:11:35Z has_accepted_license: '1' intvolume: ' 32' isi: 1 issue: '16' language: - iso: eng month: '04' oa: 1 oa_version: Published Version project: - _id: 25517E86-B435-11E9-9278-68D0E5697425 call_identifier: FP7 grant_number: '335497' name: Towards Spin qubits and Majorana fermions in Germanium selfassembled hut-wires - _id: 237B3DA4-32DE-11EA-91FC-C7463DDC885E call_identifier: FWF grant_number: P32235 name: Towards scalable hut wire quantum devices - _id: 237E5020-32DE-11EA-91FC-C7463DDC885E call_identifier: H2020 grant_number: '862046' name: TOPOLOGICALLY PROTECTED AND SCALABLE QUANTUM BITS publication: Advanced Materials publication_identifier: issn: - 0935-9648 publication_status: published publisher: Wiley quality_controlled: '1' related_material: record: - id: '7996' relation: dissertation_contains status: public - id: '9222' relation: research_data status: public scopus_import: '1' status: public title: Site-controlled uniform Ge/Si hut wires with electrically tunable spin-orbit coupling tmp: image: /images/cc_by.png legal_code_url: https://creativecommons.org/licenses/by/4.0/legalcode name: Creative Commons Attribution 4.0 International Public License (CC-BY 4.0) short: CC BY (4.0) type: journal_article user_id: 4359f0d1-fa6c-11eb-b949-802e58b17ae8 volume: 32 year: '2020' ... --- _id: '9222' article_processing_charge: No author: - first_name: Georgios full_name: Katsaros, Georgios id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros orcid: 0000-0001-8342-202X citation: ama: 'Katsaros G. Transport data for: Site‐controlled uniform Ge/Si Hut wires with electrically tunable spin–orbit coupling. 2020. doi:10.15479/AT:ISTA:9222' apa: 'Katsaros, G. (2020). Transport data for: Site‐controlled uniform Ge/Si Hut wires with electrically tunable spin–orbit coupling. Institute of Science and Technology Austria. https://doi.org/10.15479/AT:ISTA:9222' chicago: 'Katsaros, Georgios. “Transport Data for: Site‐controlled Uniform Ge/Si Hut Wires with Electrically Tunable Spin–Orbit Coupling.” Institute of Science and Technology Austria, 2020. https://doi.org/10.15479/AT:ISTA:9222.' ieee: 'G. Katsaros, “Transport data for: Site‐controlled uniform Ge/Si Hut wires with electrically tunable spin–orbit coupling.” Institute of Science and Technology Austria, 2020.' ista: 'Katsaros G. 2020. Transport data for: Site‐controlled uniform Ge/Si Hut wires with electrically tunable spin–orbit coupling, Institute of Science and Technology Austria, 10.15479/AT:ISTA:9222.' mla: 'Katsaros, Georgios. Transport Data for: Site‐controlled Uniform Ge/Si Hut Wires with Electrically Tunable Spin–Orbit Coupling. Institute of Science and Technology Austria, 2020, doi:10.15479/AT:ISTA:9222.' short: G. Katsaros, (2020). contributor: - contributor_type: research_group first_name: Georgios id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros date_created: 2021-03-05T18:00:47Z date_published: 2020-03-16T00:00:00Z date_updated: 2024-02-21T12:42:13Z day: '16' ddc: - '530' department: - _id: GeKa doi: 10.15479/AT:ISTA:9222 file: - access_level: open_access checksum: 41b66e195ed3dbd73077feee77b05652 content_type: application/x-zip-compressed creator: gkatsaro date_created: 2021-03-05T17:50:45Z date_updated: 2021-03-05T17:50:45Z file_id: '9223' file_name: DOI_SiteControlledHWs.zip file_size: 13317557 relation: main_file - access_level: open_access checksum: a1dc5f710ba4b3bb7f248195ba754ab2 content_type: text/plain creator: dernst date_created: 2021-03-10T07:31:50Z date_updated: 2021-03-10T07:31:50Z file_id: '9233' file_name: Readme.txt file_size: 3515 relation: main_file success: 1 file_date_updated: 2021-03-10T07:31:50Z has_accepted_license: '1' month: '03' oa: 1 oa_version: Published Version publisher: Institute of Science and Technology Austria related_material: record: - id: '7541' relation: used_in_publication status: public status: public title: 'Transport data for: Site‐controlled uniform Ge/Si Hut wires with electrically tunable spin–orbit coupling' tmp: image: /images/cc_0.png legal_code_url: https://creativecommons.org/publicdomain/zero/1.0/legalcode name: Creative Commons Public Domain Dedication (CC0 1.0) short: CC0 (1.0) type: research_data user_id: 2DF688A6-F248-11E8-B48F-1D18A9856A87 year: '2020' ... --- _id: '8203' abstract: - lang: eng text: Using inelastic cotunneling spectroscopy we observe a zero field splitting within the spin triplet manifold of Ge hut wire quantum dots. The states with spin ±1 in the confinement direction are energetically favored by up to 55 μeV compared to the spin 0 triplet state because of the strong spin–orbit coupling. The reported effect should be observable in a broad class of strongly confined hole quantum-dot systems and might need to be considered when operating hole spin qubits. acknowledged_ssus: - _id: NanoFab - _id: M-Shop acknowledgement: "We acknowledge G. Burkard, V. N. Golovach, C. Kloeffel, D.Loss, P. Rabl, and M. Rancič ́ for helpful discussions. We\r\nfurther acknowledge T. Adletzberger, J. Aguilera, T. Asenov, S. Bagiante, T. Menner, L. Shafeek, P. Taus, P. Traunmüller, and D. Waldhausl for their invaluable assistance. This research was supported by the Scientific Service Units of IST Austria through resources provided by the MIBA Machine Shop and the nanofabrication facility, by the FWF-P 32235 project, by the National Key R&D Program of China (2016YFA0301701, 2016YFA0300600), and by the European Union’s Horizon 2020 research and innovation program under grant agreement no. 862046. All data of this publication are available at 10.15479/AT:ISTA:7689." article_processing_charge: Yes (via OA deal) article_type: original author: - first_name: Georgios full_name: Katsaros, Georgios id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros orcid: 0000-0001-8342-202X - first_name: Josip full_name: Kukucka, Josip id: 3F5D8856-F248-11E8-B48F-1D18A9856A87 last_name: Kukucka - first_name: Lada full_name: Vukušić, Lada id: 31E9F056-F248-11E8-B48F-1D18A9856A87 last_name: Vukušić orcid: 0000-0003-2424-8636 - first_name: Hannes full_name: Watzinger, Hannes id: 35DF8E50-F248-11E8-B48F-1D18A9856A87 last_name: Watzinger - first_name: Fei full_name: Gao, Fei last_name: Gao - first_name: Ting full_name: Wang, Ting last_name: Wang orcid: 0000-0002-4619-9575 - first_name: Jian-Jun full_name: Zhang, Jian-Jun last_name: Zhang - first_name: Karsten full_name: Held, Karsten last_name: Held citation: ama: Katsaros G, Kukucka J, Vukušić L, et al. Zero field splitting of heavy-hole states in quantum dots. Nano Letters. 2020;20(7):5201-5206. doi:10.1021/acs.nanolett.0c01466 apa: Katsaros, G., Kukucka, J., Vukušić, L., Watzinger, H., Gao, F., Wang, T., … Held, K. (2020). Zero field splitting of heavy-hole states in quantum dots. Nano Letters. American Chemical Society. https://doi.org/10.1021/acs.nanolett.0c01466 chicago: Katsaros, Georgios, Josip Kukucka, Lada Vukušić, Hannes Watzinger, Fei Gao, Ting Wang, Jian-Jun Zhang, and Karsten Held. “Zero Field Splitting of Heavy-Hole States in Quantum Dots.” Nano Letters. American Chemical Society, 2020. https://doi.org/10.1021/acs.nanolett.0c01466. ieee: G. Katsaros et al., “Zero field splitting of heavy-hole states in quantum dots,” Nano Letters, vol. 20, no. 7. American Chemical Society, pp. 5201–5206, 2020. ista: Katsaros G, Kukucka J, Vukušić L, Watzinger H, Gao F, Wang T, Zhang J-J, Held K. 2020. Zero field splitting of heavy-hole states in quantum dots. Nano Letters. 20(7), 5201–5206. mla: Katsaros, Georgios, et al. “Zero Field Splitting of Heavy-Hole States in Quantum Dots.” Nano Letters, vol. 20, no. 7, American Chemical Society, 2020, pp. 5201–06, doi:10.1021/acs.nanolett.0c01466. short: G. Katsaros, J. Kukucka, L. Vukušić, H. Watzinger, F. Gao, T. Wang, J.-J. Zhang, K. Held, Nano Letters 20 (2020) 5201–5206. date_created: 2020-08-06T09:25:04Z date_published: 2020-06-01T00:00:00Z date_updated: 2024-02-21T12:44:01Z day: '01' ddc: - '530' department: - _id: GeKa doi: 10.1021/acs.nanolett.0c01466 ec_funded: 1 external_id: isi: - '000548893200066' pmid: - '32479090' file: - access_level: open_access content_type: application/pdf creator: dernst date_created: 2020-08-06T09:35:37Z date_updated: 2020-08-06T09:35:37Z file_id: '8204' file_name: 2020_NanoLetters_Katsaros.pdf file_size: 3308906 relation: main_file success: 1 file_date_updated: 2020-08-06T09:35:37Z has_accepted_license: '1' intvolume: ' 20' isi: 1 issue: '7' language: - iso: eng month: '06' oa: 1 oa_version: Published Version page: 5201-5206 pmid: 1 project: - _id: 237B3DA4-32DE-11EA-91FC-C7463DDC885E call_identifier: FWF grant_number: P32235 name: Towards scalable hut wire quantum devices - _id: 237E5020-32DE-11EA-91FC-C7463DDC885E call_identifier: H2020 grant_number: '862046' name: TOPOLOGICALLY PROTECTED AND SCALABLE QUANTUM BITS publication: Nano Letters publication_identifier: eissn: - 1530-6992 issn: - 1530-6984 publication_status: published publisher: American Chemical Society quality_controlled: '1' related_material: record: - id: '7689' relation: research_data status: public scopus_import: '1' status: public title: Zero field splitting of heavy-hole states in quantum dots tmp: image: /images/cc_by.png legal_code_url: https://creativecommons.org/licenses/by/4.0/legalcode name: Creative Commons Attribution 4.0 International Public License (CC-BY 4.0) short: CC BY (4.0) type: journal_article user_id: c635000d-4b10-11ee-a964-aac5a93f6ac1 volume: 20 year: '2020' ... --- _id: '7689' abstract: - lang: eng text: "These are the supplementary research data to the publication \"Zero field splitting of heavy-hole states in quantum dots\". All matrix files have the same format. Within each column the bias voltage is changed. Each column corresponds to either a different gate voltage or magnetic field. The voltage values are given in mV, the current values in pA. Find a specific description in the included Readme file.\r\n" article_processing_charge: No author: - first_name: Georgios full_name: Katsaros, Georgios id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros orcid: 0000-0001-8342-202X citation: ama: Katsaros G. Supplementary data for “Zero field splitting of heavy-hole states in quantum dots.” 2020. doi:10.15479/AT:ISTA:7689 apa: Katsaros, G. (2020). Supplementary data for “Zero field splitting of heavy-hole states in quantum dots.” Institute of Science and Technology Austria. https://doi.org/10.15479/AT:ISTA:7689 chicago: Katsaros, Georgios. “Supplementary Data for ‘Zero Field Splitting of Heavy-Hole States in Quantum Dots.’” Institute of Science and Technology Austria, 2020. https://doi.org/10.15479/AT:ISTA:7689. ieee: G. Katsaros, “Supplementary data for ‘Zero field splitting of heavy-hole states in quantum dots.’” Institute of Science and Technology Austria, 2020. ista: Katsaros G. 2020. Supplementary data for ‘Zero field splitting of heavy-hole states in quantum dots’, Institute of Science and Technology Austria, 10.15479/AT:ISTA:7689. mla: Katsaros, Georgios. Supplementary Data for “Zero Field Splitting of Heavy-Hole States in Quantum Dots.” Institute of Science and Technology Austria, 2020, doi:10.15479/AT:ISTA:7689. short: G. Katsaros, (2020). contributor: - contributor_type: contact_person first_name: Georgios id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros date_created: 2020-05-01T15:14:46Z date_published: 2020-05-01T00:00:00Z date_updated: 2024-02-21T12:44:02Z day: '01' ddc: - '530' department: - _id: GeKa doi: 10.15479/AT:ISTA:7689 ec_funded: 1 file: - access_level: open_access checksum: d23c0cb9e2d19e14e2f902b88b97c05d content_type: application/x-zip-compressed creator: gkatsaro date_created: 2020-05-01T15:13:28Z date_updated: 2020-07-14T12:48:02Z file_id: '7786' file_name: DOI_ZeroFieldSplitting.zip file_size: 5514403 relation: main_file file_date_updated: 2020-07-14T12:48:02Z has_accepted_license: '1' month: '05' oa: 1 oa_version: Published Version project: - _id: 237E5020-32DE-11EA-91FC-C7463DDC885E call_identifier: H2020 grant_number: '862046' name: TOPOLOGICALLY PROTECTED AND SCALABLE QUANTUM BITS - _id: 237B3DA4-32DE-11EA-91FC-C7463DDC885E call_identifier: FWF grant_number: P32235 name: Towards scalable hut wire quantum devices publisher: Institute of Science and Technology Austria related_material: record: - id: '8203' relation: used_in_publication status: public status: public title: Supplementary data for "Zero field splitting of heavy-hole states in quantum dots" tmp: image: /images/cc_0.png legal_code_url: https://creativecommons.org/publicdomain/zero/1.0/legalcode name: Creative Commons Public Domain Dedication (CC0 1.0) short: CC0 (1.0) type: research_data user_id: 2DF688A6-F248-11E8-B48F-1D18A9856A87 year: '2020' ... --- _id: '8831' abstract: - lang: eng text: Holes in planar Ge have high mobilities, strong spin-orbit interaction and electrically tunable g-factors, and are therefore emerging as a promising candidate for hybrid superconductorsemiconductor devices. This is further motivated by the observation of supercurrent transport in planar Ge Josephson Field effect transistors (JoFETs). A key challenge towards hybrid germanium quantum technology is the design of high quality interfaces and superconducting contacts that are robust against magnetic fields. By combining the assets of Al, which has a long superconducting coherence, and Nb, which has a significant superconducting gap, we form low-disordered JoFETs with large ICRN products that are capable of withstanding high magnetic fields. We furthermore demonstrate the ability of phase-biasing individual JoFETs opening up an avenue to explore topological superconductivity in planar Ge. The persistence of superconductivity in the reported hybrid devices beyond 1.8 T paves the way towards integrating spin qubits and proximity-induced superconductivity on the same chip. acknowledged_ssus: - _id: M-Shop - _id: NanoFab acknowledgement: "This research and related results were made possible with the support of the NOMIS Foundation. This research was supported by the Scientific Service Units of IST Austria through resources provided by the MIBA Machine Shop and the nanofabrication facility, the European Union’s Horizon 2020 research and innovation program under the Marie Sklodowska-Curie grant agreement #844511 and the Grant Agreement #862046. ICN2 acknowledge funding from Generalitat de Catalunya 2017 SGR 327. ICN2 is supported by the Severo Ochoa\r\nprogram from Spanish MINECO (Grant No. SEV2017-0706) and is funded by the CERCA Programme / Generalitat de Catalunya. Part of the present work has been performed in the framework of Universitat Aut`onoma de Barcelona Materials Science PhD program. The HAADF-STEM microscopy was conducted in the Laboratorio de Microscopias Avanzadas at Instituto de Nanociencia de Aragon-Universidad de Zaragoza. Authors acknowledge the LMA-INA for offering access to their instruments and expertise. We acknowledge support from CSIC Research Platform on Quantum Technologies PTI-001. This project has received funding from\r\nthe European Union’s Horizon 2020 research and innovation programme under grant agreement No 823717 – ESTEEM3. M.B. acknowledges support from SUR Generalitat de Catalunya and the EU Social Fund; project ref. 2020 FI 00103. GS and MV acknowledge support through a projectruimte grant associated with the Netherlands Organization of Scientific Research (NWO)." article_number: '2012.00322' article_processing_charge: No author: - first_name: Kushagra full_name: Aggarwal, Kushagra id: b22ab905-3539-11eb-84c3-fc159dcd79cb last_name: Aggarwal orcid: 0000-0001-9985-9293 - first_name: Andrea C full_name: Hofmann, Andrea C id: 340F461A-F248-11E8-B48F-1D18A9856A87 last_name: Hofmann - first_name: Daniel full_name: Jirovec, Daniel id: 4C473F58-F248-11E8-B48F-1D18A9856A87 last_name: Jirovec orcid: 0000-0002-7197-4801 - first_name: Ivan full_name: Prieto Gonzalez, Ivan id: 2A307FE2-F248-11E8-B48F-1D18A9856A87 last_name: Prieto Gonzalez orcid: 0000-0002-7370-5357 - first_name: Amir full_name: Sammak, Amir last_name: Sammak - first_name: Marc full_name: Botifoll, Marc last_name: Botifoll - first_name: Sara full_name: Marti-Sanchez, Sara last_name: Marti-Sanchez - first_name: Menno full_name: Veldhorst, Menno last_name: Veldhorst - first_name: Jordi full_name: Arbiol, Jordi last_name: Arbiol - first_name: Giordano full_name: Scappucci, Giordano last_name: Scappucci - first_name: Georgios full_name: Katsaros, Georgios id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros orcid: 0000-0001-8342-202X citation: ama: Aggarwal K, Hofmann AC, Jirovec D, et al. Enhancement of proximity induced superconductivity in planar Germanium. arXiv. apa: Aggarwal, K., Hofmann, A. C., Jirovec, D., Prieto Gonzalez, I., Sammak, A., Botifoll, M., … Katsaros, G. (n.d.). Enhancement of proximity induced superconductivity in planar Germanium. arXiv. chicago: Aggarwal, Kushagra, Andrea C Hofmann, Daniel Jirovec, Ivan Prieto Gonzalez, Amir Sammak, Marc Botifoll, Sara Marti-Sanchez, et al. “Enhancement of Proximity Induced Superconductivity in Planar Germanium.” ArXiv, n.d. ieee: K. Aggarwal et al., “Enhancement of proximity induced superconductivity in planar Germanium,” arXiv. . ista: Aggarwal K, Hofmann AC, Jirovec D, Prieto Gonzalez I, Sammak A, Botifoll M, Marti-Sanchez S, Veldhorst M, Arbiol J, Scappucci G, Katsaros G. Enhancement of proximity induced superconductivity in planar Germanium. arXiv, 2012.00322. mla: Aggarwal, Kushagra, et al. “Enhancement of Proximity Induced Superconductivity in Planar Germanium.” ArXiv, 2012.00322. short: K. Aggarwal, A.C. Hofmann, D. Jirovec, I. Prieto Gonzalez, A. Sammak, M. Botifoll, S. Marti-Sanchez, M. Veldhorst, J. Arbiol, G. Scappucci, G. Katsaros, ArXiv (n.d.). date_created: 2020-12-02T10:42:53Z date_published: 2020-12-02T00:00:00Z date_updated: 2024-03-28T23:30:27Z day: '02' ddc: - '530' department: - _id: GeKa ec_funded: 1 external_id: arxiv: - '2012.00322' file: - access_level: open_access checksum: 22a612e206232fa94b138b2c2f957582 content_type: application/pdf creator: gkatsaro date_created: 2020-12-02T10:42:31Z date_updated: 2020-12-02T10:42:31Z file_id: '8832' file_name: Superconducting_2D_Ge.pdf file_size: 1697939 relation: main_file file_date_updated: 2020-12-02T10:42:31Z has_accepted_license: '1' language: - iso: eng month: '12' oa: 1 oa_version: Submitted Version project: - _id: 262116AA-B435-11E9-9278-68D0E5697425 name: Hybrid Semiconductor - Superconductor Quantum Devices - _id: 26A151DA-B435-11E9-9278-68D0E5697425 call_identifier: H2020 grant_number: '844511' name: Majorana bound states in Ge/SiGe heterostructures - _id: 237E5020-32DE-11EA-91FC-C7463DDC885E call_identifier: H2020 grant_number: '862046' name: TOPOLOGICALLY PROTECTED AND SCALABLE QUANTUM BITS publication: arXiv publication_status: submitted related_material: record: - id: '10559' relation: later_version status: public - id: '8834' relation: research_data status: public - id: '10058' relation: dissertation_contains status: public status: public title: Enhancement of proximity induced superconductivity in planar Germanium type: preprint user_id: 2DF688A6-F248-11E8-B48F-1D18A9856A87 year: '2020' ... --- _id: '10065' abstract: - lang: eng text: We study double quantum dots in a Ge/SiGe heterostructure and test their maturity towards singlet-triplet ($S-T_0$) qubits. We demonstrate a large range of tunability, from two single quantum dots to a double quantum dot. We measure Pauli spin blockade and study the anisotropy of the $g$-factor. We use an adjacent quantum dot for sensing charge transitions in the double quantum dot at interest. In conclusion, Ge/SiGe possesses all ingredients necessary for building a singlet-triplet qubit. acknowledged_ssus: - _id: M-Shop - _id: NanoFab acknowledgement: "We thank Matthias Brauns for helpful discussions and careful proofreading of the manuscript. This project has received funding from the European Union’s Horizon 2020 research and innovation program under the Marie Sklodowska-Curie grant agreement No 844511 and from the FWF project P30207. The research was supported by the Scientific Service Units of IST Austria through resources provided by the MIBA machine shop and the nanofabrication\r\nfacility." article_number: '1910.05841' article_processing_charge: No author: - first_name: Andrea C full_name: Hofmann, Andrea C id: 340F461A-F248-11E8-B48F-1D18A9856A87 last_name: Hofmann - first_name: Daniel full_name: Jirovec, Daniel id: 4C473F58-F248-11E8-B48F-1D18A9856A87 last_name: Jirovec orcid: 0000-0002-7197-4801 - first_name: Maxim full_name: Borovkov, Maxim last_name: Borovkov - first_name: Ivan full_name: Prieto Gonzalez, Ivan id: 2A307FE2-F248-11E8-B48F-1D18A9856A87 last_name: Prieto Gonzalez orcid: 0000-0002-7370-5357 - first_name: Andrea full_name: Ballabio, Andrea last_name: Ballabio - first_name: Jacopo full_name: Frigerio, Jacopo last_name: Frigerio - first_name: Daniel full_name: Chrastina, Daniel last_name: Chrastina - first_name: Giovanni full_name: Isella, Giovanni last_name: Isella - first_name: Georgios full_name: Katsaros, Georgios id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros orcid: 0000-0001-8342-202X citation: ama: Hofmann AC, Jirovec D, Borovkov M, et al. Assessing the potential of Ge/SiGe quantum dots as hosts for singlet-triplet qubits. arXiv. doi:10.48550/arXiv.1910.05841 apa: Hofmann, A. C., Jirovec, D., Borovkov, M., Prieto Gonzalez, I., Ballabio, A., Frigerio, J., … Katsaros, G. (n.d.). Assessing the potential of Ge/SiGe quantum dots as hosts for singlet-triplet qubits. arXiv. https://doi.org/10.48550/arXiv.1910.05841 chicago: Hofmann, Andrea C, Daniel Jirovec, Maxim Borovkov, Ivan Prieto Gonzalez, Andrea Ballabio, Jacopo Frigerio, Daniel Chrastina, Giovanni Isella, and Georgios Katsaros. “Assessing the Potential of Ge/SiGe Quantum Dots as Hosts for Singlet-Triplet Qubits.” ArXiv, n.d. https://doi.org/10.48550/arXiv.1910.05841. ieee: A. C. Hofmann et al., “Assessing the potential of Ge/SiGe quantum dots as hosts for singlet-triplet qubits,” arXiv. . ista: Hofmann AC, Jirovec D, Borovkov M, Prieto Gonzalez I, Ballabio A, Frigerio J, Chrastina D, Isella G, Katsaros G. Assessing the potential of Ge/SiGe quantum dots as hosts for singlet-triplet qubits. arXiv, 1910.05841. mla: Hofmann, Andrea C., et al. “Assessing the Potential of Ge/SiGe Quantum Dots as Hosts for Singlet-Triplet Qubits.” ArXiv, 1910.05841, doi:10.48550/arXiv.1910.05841. short: A.C. Hofmann, D. Jirovec, M. Borovkov, I. Prieto Gonzalez, A. Ballabio, J. Frigerio, D. Chrastina, G. Isella, G. Katsaros, ArXiv (n.d.). date_created: 2021-10-01T12:14:51Z date_published: 2019-10-13T00:00:00Z date_updated: 2024-03-28T23:30:27Z day: '13' department: - _id: GeKa doi: 10.48550/arXiv.1910.05841 ec_funded: 1 external_id: arxiv: - '1910.05841' language: - iso: eng main_file_link: - open_access: '1' url: https://arxiv.org/abs/1910.05841 month: '10' oa: 1 oa_version: Preprint project: - _id: 26A151DA-B435-11E9-9278-68D0E5697425 call_identifier: H2020 grant_number: '844511' name: Majorana bound states in Ge/SiGe heterostructures - _id: 2641CE5E-B435-11E9-9278-68D0E5697425 call_identifier: FWF grant_number: P30207 name: Hole spin orbit qubits in Ge quantum wells publication: arXiv publication_status: submitted related_material: record: - id: '10058' relation: dissertation_contains status: public status: public title: Assessing the potential of Ge/SiGe quantum dots as hosts for singlet-triplet qubits type: preprint user_id: 2DF688A6-F248-11E8-B48F-1D18A9856A87 year: '2019' ... --- _id: '77' abstract: - lang: eng text: Holes confined in quantum dots have gained considerable interest in the past few years due to their potential as spin qubits. Here we demonstrate two-axis control of a spin 3/2 qubit in natural Ge. The qubit is formed in a hut wire double quantum dot device. The Pauli spin blockade principle allowed us to demonstrate electric dipole spin resonance by applying a radio frequency electric field to one of the electrodes defining the double quantum dot. Coherent hole spin oscillations with Rabi frequencies reaching 140 MHz are demonstrated and dephasing times of 130 ns are measured. The reported results emphasize the potential of Ge as a platform for fast and electrically tunable hole spin qubit devices. acknowledged_ssus: - _id: M-Shop - _id: NanoFab article_processing_charge: Yes article_type: original author: - first_name: Hannes full_name: Watzinger, Hannes id: 35DF8E50-F248-11E8-B48F-1D18A9856A87 last_name: Watzinger - first_name: Josip full_name: Kukucka, Josip id: 3F5D8856-F248-11E8-B48F-1D18A9856A87 last_name: Kukucka - first_name: Lada full_name: Vukusic, Lada id: 31E9F056-F248-11E8-B48F-1D18A9856A87 last_name: Vukusic orcid: 0000-0003-2424-8636 - first_name: Fei full_name: Gao, Fei last_name: Gao - first_name: Ting full_name: Wang, Ting last_name: Wang - first_name: Friedrich full_name: Schäffler, Friedrich last_name: Schäffler - first_name: Jian full_name: Zhang, Jian last_name: Zhang - first_name: Georgios full_name: Katsaros, Georgios id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros orcid: 0000-0001-8342-202X citation: ama: Watzinger H, Kukucka J, Vukušić L, et al. A germanium hole spin qubit. Nature Communications. 2018;9(3902). doi:10.1038/s41467-018-06418-4 apa: Watzinger, H., Kukucka, J., Vukušić, L., Gao, F., Wang, T., Schäffler, F., … Katsaros, G. (2018). A germanium hole spin qubit. Nature Communications. Nature Publishing Group. https://doi.org/10.1038/s41467-018-06418-4 chicago: Watzinger, Hannes, Josip Kukucka, Lada Vukušić, Fei Gao, Ting Wang, Friedrich Schäffler, Jian Zhang, and Georgios Katsaros. “A Germanium Hole Spin Qubit.” Nature Communications. Nature Publishing Group, 2018. https://doi.org/10.1038/s41467-018-06418-4. ieee: H. Watzinger et al., “A germanium hole spin qubit,” Nature Communications, vol. 9, no. 3902. Nature Publishing Group, 2018. ista: Watzinger H, Kukucka J, Vukušić L, Gao F, Wang T, Schäffler F, Zhang J, Katsaros G. 2018. A germanium hole spin qubit. Nature Communications. 9(3902). mla: Watzinger, Hannes, et al. “A Germanium Hole Spin Qubit.” Nature Communications, vol. 9, no. 3902, Nature Publishing Group, 2018, doi:10.1038/s41467-018-06418-4. short: H. Watzinger, J. Kukucka, L. Vukušić, F. Gao, T. Wang, F. Schäffler, J. Zhang, G. Katsaros, Nature Communications 9 (2018). date_created: 2018-12-11T11:44:30Z date_published: 2018-09-25T00:00:00Z date_updated: 2023-09-08T11:44:02Z day: '25' ddc: - '530' department: - _id: GeKa doi: 10.1038/s41467-018-06418-4 ec_funded: 1 external_id: isi: - '000445560800010' file: - access_level: open_access checksum: e7148c10a64497e279c4de570b6cc544 content_type: application/pdf creator: dernst date_created: 2018-12-17T10:28:30Z date_updated: 2020-07-14T12:48:02Z file_id: '5687' file_name: 2018_NatureComm_Watzinger.pdf file_size: 1063469 relation: main_file file_date_updated: 2020-07-14T12:48:02Z has_accepted_license: '1' intvolume: ' 9' isi: 1 issue: '3902 ' language: - iso: eng month: '09' oa: 1 oa_version: Published Version project: - _id: 25517E86-B435-11E9-9278-68D0E5697425 call_identifier: FP7 grant_number: '335497' name: Towards Spin qubits and Majorana fermions in Germanium selfassembled hut-wires - _id: 2552F888-B435-11E9-9278-68D0E5697425 call_identifier: FWF grant_number: Y00715 name: Loch Spin-Qubits und Majorana-Fermionen in Germanium publication: Nature Communications publication_status: published publisher: Nature Publishing Group quality_controlled: '1' related_material: record: - id: '7977' relation: popular_science - id: '7996' relation: dissertation_contains status: public scopus_import: '1' status: public title: A germanium hole spin qubit tmp: image: /images/cc_by.png legal_code_url: https://creativecommons.org/licenses/by/4.0/legalcode name: Creative Commons Attribution 4.0 International Public License (CC-BY 4.0) short: CC BY (4.0) type: journal_article user_id: c635000d-4b10-11ee-a964-aac5a93f6ac1 volume: 9 year: '2018' ... --- _id: '23' abstract: - lang: eng text: The strong atomistic spin–orbit coupling of holes makes single-shot spin readout measurements difficult because it reduces the spin lifetimes. By integrating the charge sensor into a high bandwidth radio frequency reflectometry setup, we were able to demonstrate single-shot readout of a germanium quantum dot hole spin and measure the spin lifetime. Hole spin relaxation times of about 90 μs at 500 mT are reported, with a total readout visibility of about 70%. By analyzing separately the spin-to-charge conversion and charge readout fidelities, we have obtained insight into the processes limiting the visibilities of hole spins. The analyses suggest that high hole visibilities are feasible at realistic experimental conditions, underlying the potential of hole spins for the realization of viable qubit devices. acknowledged_ssus: - _id: M-Shop - _id: NanoFab article_processing_charge: No author: - first_name: Lada full_name: Vukušić, Lada id: 31E9F056-F248-11E8-B48F-1D18A9856A87 last_name: Vukušić orcid: 0000-0003-2424-8636 - first_name: Josip full_name: Kukucka, Josip id: 3F5D8856-F248-11E8-B48F-1D18A9856A87 last_name: Kukucka - first_name: Hannes full_name: Watzinger, Hannes id: 35DF8E50-F248-11E8-B48F-1D18A9856A87 last_name: Watzinger - first_name: Joshua M full_name: Milem, Joshua M id: 4CDE0A96-F248-11E8-B48F-1D18A9856A87 last_name: Milem - first_name: Friedrich full_name: Schäffler, Friedrich last_name: Schäffler - first_name: Georgios full_name: Katsaros, Georgios id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros orcid: 0000-0001-8342-202X citation: ama: Vukušić L, Kukucka J, Watzinger H, Milem JM, Schäffler F, Katsaros G. Single-shot readout of hole spins in Ge. Nano Letters. 2018;18(11):7141-7145. doi:10.1021/acs.nanolett.8b03217 apa: Vukušić, L., Kukucka, J., Watzinger, H., Milem, J. M., Schäffler, F., & Katsaros, G. (2018). Single-shot readout of hole spins in Ge. Nano Letters. American Chemical Society. https://doi.org/10.1021/acs.nanolett.8b03217 chicago: Vukušić, Lada, Josip Kukucka, Hannes Watzinger, Joshua M Milem, Friedrich Schäffler, and Georgios Katsaros. “Single-Shot Readout of Hole Spins in Ge.” Nano Letters. American Chemical Society, 2018. https://doi.org/10.1021/acs.nanolett.8b03217. ieee: L. Vukušić, J. Kukucka, H. Watzinger, J. M. Milem, F. Schäffler, and G. Katsaros, “Single-shot readout of hole spins in Ge,” Nano Letters, vol. 18, no. 11. American Chemical Society, pp. 7141–7145, 2018. ista: Vukušić L, Kukucka J, Watzinger H, Milem JM, Schäffler F, Katsaros G. 2018. Single-shot readout of hole spins in Ge. Nano Letters. 18(11), 7141–7145. mla: Vukušić, Lada, et al. “Single-Shot Readout of Hole Spins in Ge.” Nano Letters, vol. 18, no. 11, American Chemical Society, 2018, pp. 7141–45, doi:10.1021/acs.nanolett.8b03217. short: L. Vukušić, J. Kukucka, H. Watzinger, J.M. Milem, F. Schäffler, G. Katsaros, Nano Letters 18 (2018) 7141–7145. date_created: 2018-12-11T11:44:13Z date_published: 2018-10-25T00:00:00Z date_updated: 2023-09-18T09:30:37Z day: '25' ddc: - '530' department: - _id: GeKa doi: 10.1021/acs.nanolett.8b03217 ec_funded: 1 external_id: isi: - '000451102100064' pmid: - '30359041' file: - access_level: open_access checksum: 3e6034a94c6b5335e939145d88bdb371 content_type: application/pdf creator: system date_created: 2018-12-12T10:16:08Z date_updated: 2020-07-14T12:45:37Z file_id: '5194' file_name: IST-2018-1065-v1+1_ACS_nanoletters_8b03217.pdf file_size: 1361441 relation: main_file file_date_updated: 2020-07-14T12:45:37Z has_accepted_license: '1' intvolume: ' 18' isi: 1 issue: '11' language: - iso: eng month: '10' oa: 1 oa_version: Published Version page: 7141 - 7145 pmid: 1 project: - _id: 25517E86-B435-11E9-9278-68D0E5697425 call_identifier: FP7 grant_number: '335497' name: Towards Spin qubits and Majorana fermions in Germanium selfassembled hut-wires publication: Nano Letters publication_identifier: issn: - '15306984' publication_status: published publisher: American Chemical Society publist_id: '8032' pubrep_id: '1065' quality_controlled: '1' related_material: record: - id: '7977' relation: popular_science - id: '69' relation: dissertation_contains status: public - id: '7996' relation: dissertation_contains status: public scopus_import: '1' status: public title: Single-shot readout of hole spins in Ge tmp: image: /images/cc_by.png legal_code_url: https://creativecommons.org/licenses/by/4.0/legalcode name: Creative Commons Attribution 4.0 International Public License (CC-BY 4.0) short: CC BY (4.0) type: journal_article user_id: c635000d-4b10-11ee-a964-aac5a93f6ac1 volume: 18 year: '2018' ... --- _id: '840' abstract: - lang: eng text: Heavy holes confined in quantum dots are predicted to be promising candidates for the realization of spin qubits with long coherence times. Here we focus on such heavy-hole states confined in germanium hut wires. By tuning the growth density of the latter we can realize a T-like structure between two neighboring wires. Such a structure allows the realization of a charge sensor, which is electrostatically and tunnel coupled to a quantum dot, with charge-transfer signals as high as 0.3 e. By integrating the T-like structure into a radiofrequency reflectometry setup, single-shot measurements allowing the extraction of hole tunneling times are performed. The extracted tunneling times of less than 10 μs are attributed to the small effective mass of Ge heavy-hole states and pave the way toward projective spin readout measurements. acknowledged_ssus: - _id: M-Shop article_processing_charge: No author: - first_name: Lada full_name: Vukusic, Lada id: 31E9F056-F248-11E8-B48F-1D18A9856A87 last_name: Vukusic orcid: 0000-0003-2424-8636 - first_name: Josip full_name: Kukucka, Josip id: 3F5D8856-F248-11E8-B48F-1D18A9856A87 last_name: Kukucka - first_name: Hannes full_name: Watzinger, Hannes id: 35DF8E50-F248-11E8-B48F-1D18A9856A87 last_name: Watzinger - first_name: Georgios full_name: Katsaros, Georgios id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros orcid: 0000-0001-8342-202X citation: ama: Vukušić L, Kukucka J, Watzinger H, Katsaros G. Fast hole tunneling times in germanium hut wires probed by single-shot reflectometry. Nano Letters. 2017;17(9):5706-5710. doi:10.1021/acs.nanolett.7b02627 apa: Vukušić, L., Kukucka, J., Watzinger, H., & Katsaros, G. (2017). Fast hole tunneling times in germanium hut wires probed by single-shot reflectometry. Nano Letters. American Chemical Society. https://doi.org/10.1021/acs.nanolett.7b02627 chicago: Vukušić, Lada, Josip Kukucka, Hannes Watzinger, and Georgios Katsaros. “Fast Hole Tunneling Times in Germanium Hut Wires Probed by Single-Shot Reflectometry.” Nano Letters. American Chemical Society, 2017. https://doi.org/10.1021/acs.nanolett.7b02627. ieee: L. Vukušić, J. Kukucka, H. Watzinger, and G. Katsaros, “Fast hole tunneling times in germanium hut wires probed by single-shot reflectometry,” Nano Letters, vol. 17, no. 9. American Chemical Society, pp. 5706–5710, 2017. ista: Vukušić L, Kukucka J, Watzinger H, Katsaros G. 2017. Fast hole tunneling times in germanium hut wires probed by single-shot reflectometry. Nano Letters. 17(9), 5706–5710. mla: Vukušić, Lada, et al. “Fast Hole Tunneling Times in Germanium Hut Wires Probed by Single-Shot Reflectometry.” Nano Letters, vol. 17, no. 9, American Chemical Society, 2017, pp. 5706–10, doi:10.1021/acs.nanolett.7b02627. short: L. Vukušić, J. Kukucka, H. Watzinger, G. Katsaros, Nano Letters 17 (2017) 5706–5710. date_created: 2018-12-11T11:48:47Z date_published: 2017-08-10T00:00:00Z date_updated: 2023-09-26T15:50:22Z day: '10' ddc: - '539' department: - _id: GeKa doi: 10.1021/acs.nanolett.7b02627 ec_funded: 1 external_id: isi: - '000411043500078' file: - access_level: open_access checksum: 761371a0129b2aa442424b9561450ece content_type: application/pdf creator: system date_created: 2018-12-12T10:12:33Z date_updated: 2020-07-14T12:48:13Z file_id: '4951' file_name: IST-2017-865-v1+1_acs.nanolett.7b02627.pdf file_size: 2449546 relation: main_file file_date_updated: 2020-07-14T12:48:13Z has_accepted_license: '1' intvolume: ' 17' isi: 1 issue: '9' language: - iso: eng month: '08' oa: 1 oa_version: Published Version page: 5706 - 5710 project: - _id: 25517E86-B435-11E9-9278-68D0E5697425 call_identifier: FP7 grant_number: '335497' name: Towards Spin qubits and Majorana fermions in Germanium selfassembled hut-wires publication: Nano Letters publication_identifier: issn: - '15306984' publication_status: published publisher: American Chemical Society publist_id: '6808' pubrep_id: '865' quality_controlled: '1' related_material: record: - id: '7977' relation: popular_science - id: '69' relation: dissertation_contains status: public - id: '7996' relation: dissertation_contains status: public scopus_import: '1' status: public title: Fast hole tunneling times in germanium hut wires probed by single-shot reflectometry tmp: image: /images/cc_by.png legal_code_url: https://creativecommons.org/licenses/by/4.0/legalcode name: Creative Commons Attribution 4.0 International Public License (CC-BY 4.0) short: CC BY (4.0) type: journal_article user_id: c635000d-4b10-11ee-a964-aac5a93f6ac1 volume: 17 year: '2017' ... --- _id: '1328' abstract: - lang: eng text: Hole spins have gained considerable interest in the past few years due to their potential for fast electrically controlled qubits. Here, we study holes confined in Ge hut wires, a so-far unexplored type of nanostructure. Low-temperature magnetotransport measurements reveal a large anisotropy between the in-plane and out-of-plane g-factors of up to 18. Numerical simulations verify that this large anisotropy originates from a confined wave function of heavy-hole character. A light-hole admixture of less than 1% is estimated for the states of lowest energy, leading to a surprisingly large reduction of the out-of-plane g-factors compared with those for pure heavy holes. Given this tiny light-hole contribution, the spin lifetimes are expected to be very long, even in isotopically nonpurified samples. acknowledgement: 'The work was supported by the EC FP7 ICT project SiSPIN no. 323841, the EC FP7 ICT project PAMS no. 610446, the ERC Starting Grant no. 335497, the FWF-I-1190-N20 project, and the Swiss NSF. We acknowledge F. Schäffler for fruitful discussions related to the hut wire growth and for giving us access to the molecular beam epitaxy system, M. Schatzl for her support in electron beam lithography, and V. Jadris ̌ko for helping us with the COMSOL simulations. Finally, we thank G. Bauer for his continuous support. ' author: - first_name: Hannes full_name: Watzinger, Hannes id: 35DF8E50-F248-11E8-B48F-1D18A9856A87 last_name: Watzinger - first_name: Christoph full_name: Kloeffel, Christoph last_name: Kloeffel - first_name: Lada full_name: Vukusic, Lada id: 31E9F056-F248-11E8-B48F-1D18A9856A87 last_name: Vukusic orcid: 0000-0003-2424-8636 - first_name: Marta full_name: Rossell, Marta last_name: Rossell - first_name: Violetta full_name: Sessi, Violetta last_name: Sessi - first_name: Josip full_name: Kukucka, Josip id: 3F5D8856-F248-11E8-B48F-1D18A9856A87 last_name: Kukucka - first_name: Raimund full_name: Kirchschlager, Raimund last_name: Kirchschlager - first_name: Elisabeth full_name: Lausecker, Elisabeth id: 33662F76-F248-11E8-B48F-1D18A9856A87 last_name: Lausecker - first_name: Alisha full_name: Truhlar, Alisha id: 49CBC780-F248-11E8-B48F-1D18A9856A87 last_name: Truhlar - first_name: Martin full_name: Glaser, Martin last_name: Glaser - first_name: Armando full_name: Rastelli, Armando last_name: Rastelli - first_name: Andreas full_name: Fuhrer, Andreas last_name: Fuhrer - first_name: Daniel full_name: Loss, Daniel last_name: Loss - first_name: Georgios full_name: Katsaros, Georgios id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros orcid: 0000-0001-8342-202X citation: ama: Watzinger H, Kloeffel C, Vukušić L, et al. Heavy-hole states in germanium hut wires. Nano Letters. 2016;16(11):6879-6885. doi:10.1021/acs.nanolett.6b02715 apa: Watzinger, H., Kloeffel, C., Vukušić, L., Rossell, M., Sessi, V., Kukucka, J., … Katsaros, G. (2016). Heavy-hole states in germanium hut wires. Nano Letters. American Chemical Society. https://doi.org/10.1021/acs.nanolett.6b02715 chicago: Watzinger, Hannes, Christoph Kloeffel, Lada Vukušić, Marta Rossell, Violetta Sessi, Josip Kukucka, Raimund Kirchschlager, et al. “Heavy-Hole States in Germanium Hut Wires.” Nano Letters. American Chemical Society, 2016. https://doi.org/10.1021/acs.nanolett.6b02715. ieee: H. Watzinger et al., “Heavy-hole states in germanium hut wires,” Nano Letters, vol. 16, no. 11. American Chemical Society, pp. 6879–6885, 2016. ista: Watzinger H, Kloeffel C, Vukušić L, Rossell M, Sessi V, Kukucka J, Kirchschlager R, Lausecker E, Truhlar A, Glaser M, Rastelli A, Fuhrer A, Loss D, Katsaros G. 2016. Heavy-hole states in germanium hut wires. Nano Letters. 16(11), 6879–6885. mla: Watzinger, Hannes, et al. “Heavy-Hole States in Germanium Hut Wires.” Nano Letters, vol. 16, no. 11, American Chemical Society, 2016, pp. 6879–85, doi:10.1021/acs.nanolett.6b02715. short: H. Watzinger, C. Kloeffel, L. Vukušić, M. Rossell, V. Sessi, J. Kukucka, R. Kirchschlager, E. Lausecker, A. Truhlar, M. Glaser, A. Rastelli, A. Fuhrer, D. Loss, G. Katsaros, Nano Letters 16 (2016) 6879–6885. date_created: 2018-12-11T11:51:24Z date_published: 2016-09-22T00:00:00Z date_updated: 2023-09-07T13:15:02Z day: '22' ddc: - '539' department: - _id: GeKa doi: 10.1021/acs.nanolett.6b02715 ec_funded: 1 file: - access_level: open_access checksum: b63feece90d7b620ece49ca632e34ff3 content_type: application/pdf creator: system date_created: 2018-12-12T10:14:04Z date_updated: 2020-07-14T12:44:44Z file_id: '5053' file_name: IST-2016-664-v1+1_acs.nanolett.6b02715.pdf file_size: 535121 relation: main_file file_date_updated: 2020-07-14T12:44:44Z has_accepted_license: '1' intvolume: ' 16' issue: '11' language: - iso: eng month: '09' oa: 1 oa_version: Published Version page: 6879 - 6885 project: - _id: 25517E86-B435-11E9-9278-68D0E5697425 call_identifier: FP7 grant_number: '335497' name: Towards Spin qubits and Majorana fermions in Germanium selfassembled hut-wires publication: Nano Letters publication_status: published publisher: American Chemical Society publist_id: '5941' pubrep_id: '664' quality_controlled: '1' related_material: record: - id: '7977' relation: popular_science status: for_moderation - id: '7996' relation: dissertation_contains status: public scopus_import: 1 status: public title: Heavy-hole states in germanium hut wires tmp: image: /images/cc_by.png legal_code_url: https://creativecommons.org/licenses/by/4.0/legalcode name: Creative Commons Attribution 4.0 International Public License (CC-BY 4.0) short: CC BY (4.0) type: journal_article user_id: 3E5EF7F0-F248-11E8-B48F-1D18A9856A87 volume: 16 year: '2016' ... --- _id: '1761' abstract: - lang: eng text: Metal silicides formed by means of thermal annealing processes are employed as contact materials in microelectronics. Control of the structure of silicide/silicon interfaces becomes a critical issue when the characteristic size of the device is reduced below a few tens of nanometers. Here, we report on silicide clustering occurring within the channel of PtSi/Si/PtSi Schottky-barrier transistors. This phenomenon is investigated through atomistic simulations and low-temperature resonant-tunneling spectroscopy. Our results provide evidence for the segregation of a PtSi cluster with a diameter of a few nanometers from the silicide contact. The cluster acts as a metallic quantum dot giving rise to distinct signatures of quantum transport through its discrete energy states. acknowledgement: This work was supported by the Agence Nationale de la Recherche and by the EU through the ERC Starting Grant HybridNano author: - first_name: Massimo full_name: Mongillo, Massimo last_name: Mongillo - first_name: Panayotis full_name: Spathis, Panayotis N last_name: Spathis - first_name: Georgios full_name: Georgios Katsaros id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros - first_name: Silvano full_name: De Franceschi, Silvano last_name: De Franceschi - first_name: Pascal full_name: Gentile, Pascal last_name: Gentile - first_name: Riccardo full_name: Rurali, Riccardo last_name: Rurali - first_name: Xavier full_name: Cartoixà, Xavier last_name: Cartoixà citation: ama: Mongillo M, Spathis P, Katsaros G, et al. PtSi clustering in silicon probed by transport spectroscopy. Physical Review X. 2014;3(4). doi:10.1103/PhysRevX.3.041025 apa: Mongillo, M., Spathis, P., Katsaros, G., De Franceschi, S., Gentile, P., Rurali, R., & Cartoixà, X. (2014). PtSi clustering in silicon probed by transport spectroscopy. Physical Review X. American Physical Society. https://doi.org/10.1103/PhysRevX.3.041025 chicago: Mongillo, Massimo, Panayotis Spathis, Georgios Katsaros, Silvano De Franceschi, Pascal Gentile, Riccardo Rurali, and Xavier Cartoixà. “PtSi Clustering in Silicon Probed by Transport Spectroscopy.” Physical Review X. American Physical Society, 2014. https://doi.org/10.1103/PhysRevX.3.041025. ieee: M. Mongillo et al., “PtSi clustering in silicon probed by transport spectroscopy,” Physical Review X, vol. 3, no. 4. American Physical Society, 2014. ista: Mongillo M, Spathis P, Katsaros G, De Franceschi S, Gentile P, Rurali R, Cartoixà X. 2014. PtSi clustering in silicon probed by transport spectroscopy. Physical Review X. 3(4). mla: Mongillo, Massimo, et al. “PtSi Clustering in Silicon Probed by Transport Spectroscopy.” Physical Review X, vol. 3, no. 4, American Physical Society, 2014, doi:10.1103/PhysRevX.3.041025. short: M. Mongillo, P. Spathis, G. Katsaros, S. De Franceschi, P. Gentile, R. Rurali, X. Cartoixà, Physical Review X 3 (2014). date_created: 2018-12-11T11:53:52Z date_published: 2014-01-01T00:00:00Z date_updated: 2021-01-12T06:53:02Z day: '01' doi: 10.1103/PhysRevX.3.041025 extern: 1 intvolume: ' 3' issue: '4' main_file_link: - open_access: '1' url: http://arxiv.org/abs/1407.5413 month: '01' oa: 1 publication: Physical Review X publication_status: published publisher: American Physical Society publist_id: '5363' quality_controlled: 0 status: public title: PtSi clustering in silicon probed by transport spectroscopy type: journal_article volume: 3 year: '2014' ... --- _id: '1760' abstract: - lang: eng text: We report on hole g-factor measurements in three terminal SiGe self-assembled quantum dot devices with a top gate electrode positioned very close to the nanostructure. Measurements of both the perpendicular as well as the parallel g-factor reveal significant changes for a small modulation of the top gate voltage. From the observed modulations, we estimate that, for realistic experimental conditions, hole spins can be electrically manipulated with Rabi frequencies in the order of 100 MHz. This work emphasises the potential of hole-based nano-devices for efficient spin manipulation by means of the g-tensor modulation technique. acknowledgement: We acknowledge the financial support from the Nanosciences Foundation (Grenoble, France), the Commission for a Marie Curie Carrer Integration Grant, the Austrian Science Fund (FWF) for a Lise-Meitner Fellowship (M1435-N30), the DOE under Contract No. DE-FG02-08ER46482 (Yale), the European Starting Grant program, and the Agence Nationale de la Recherche author: - first_name: Natalia full_name: Ares, Natalia last_name: Ares - first_name: Georgios full_name: Georgios Katsaros id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros - first_name: Vitaly full_name: Golovach, Vitaly N last_name: Golovach - first_name: Jianjun full_name: Zhang, Jianjun last_name: Zhang - first_name: Aaron full_name: Prager, Aaron A last_name: Prager - first_name: Leonid full_name: Glazman, Leonid I last_name: Glazman - first_name: Oliver full_name: Schmidt, Oliver G last_name: Schmidt - first_name: Silvano full_name: De Franceschi, Silvano last_name: De Franceschi citation: ama: Ares N, Katsaros G, Golovach V, et al. SiGe quantum dots for fast hole spin Rabi oscillations. Applied Physics Letters. 2013;103(26). doi:10.1063/1.4858959 apa: Ares, N., Katsaros, G., Golovach, V., Zhang, J., Prager, A., Glazman, L., … De Franceschi, S. (2013). SiGe quantum dots for fast hole spin Rabi oscillations. Applied Physics Letters. American Institute of Physics. https://doi.org/10.1063/1.4858959 chicago: Ares, Natalia, Georgios Katsaros, Vitaly Golovach, Jianjun Zhang, Aaron Prager, Leonid Glazman, Oliver Schmidt, and Silvano De Franceschi. “SiGe Quantum Dots for Fast Hole Spin Rabi Oscillations.” Applied Physics Letters. American Institute of Physics, 2013. https://doi.org/10.1063/1.4858959. ieee: N. Ares et al., “SiGe quantum dots for fast hole spin Rabi oscillations,” Applied Physics Letters, vol. 103, no. 26. American Institute of Physics, 2013. ista: Ares N, Katsaros G, Golovach V, Zhang J, Prager A, Glazman L, Schmidt O, De Franceschi S. 2013. SiGe quantum dots for fast hole spin Rabi oscillations. Applied Physics Letters. 103(26). mla: Ares, Natalia, et al. “SiGe Quantum Dots for Fast Hole Spin Rabi Oscillations.” Applied Physics Letters, vol. 103, no. 26, American Institute of Physics, 2013, doi:10.1063/1.4858959. short: N. Ares, G. Katsaros, V. Golovach, J. Zhang, A. Prager, L. Glazman, O. Schmidt, S. De Franceschi, Applied Physics Letters 103 (2013). date_created: 2018-12-11T11:53:52Z date_published: 2013-01-23T00:00:00Z date_updated: 2021-01-12T06:53:02Z day: '23' doi: 10.1063/1.4858959 extern: 1 intvolume: ' 103' issue: '26' main_file_link: - open_access: '1' url: http://arxiv.org/abs/1307.7196 month: '01' oa: 1 publication: Applied Physics Letters publication_status: published publisher: American Institute of Physics publist_id: '5364' quality_controlled: 0 status: public title: SiGe quantum dots for fast hole spin Rabi oscillations type: journal_article volume: 103 year: '2013' ... --- _id: '1759' abstract: - lang: eng text: We report an electric-field-induced giant modulation of the hole g factor in SiGe nanocrystals. The observed effect is ascribed to a so-far overlooked contribution to the g factor that stems from the mixing between heavy- and light-hole wave functions. We show that the relative displacement between the confined heavy- and light-hole states, occurring upon application of the electric field, alters their mixing strength leading to a strong nonmonotonic modulation of the g factor. acknowledgement: We acknowledge financial support from the Nanosciences Foundation (Grenoble, France), DOE under Contract No. DEFG02-08ER46482 (Yale), the Agence Nationale de la Recherche, and the European Starting Grant. G. K. acknowledges support from the European Commission via a Marie Curie Carrer Integration Grant and the FWF for a Lise-Meitner Fellowship author: - first_name: Natalia full_name: Ares, Natalia last_name: Ares - first_name: Vitaly full_name: Golovach, Vitaly N last_name: Golovach - first_name: Georgios full_name: Georgios Katsaros id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros - first_name: Mathieu full_name: Stoffel, Mathieu last_name: Stoffel - first_name: Frank full_name: Fournel, Frank last_name: Fournel - first_name: Leonid full_name: Glazman, Leonid I last_name: Glazman - first_name: Oliver full_name: Schmidt, Oliver G last_name: Schmidt - first_name: Silvano full_name: De Franceschi, Silvano last_name: De Franceschi citation: ama: Ares N, Golovach V, Katsaros G, et al. Nature of tunable hole g factors in quantum dots. Physical Review Letters. 2013;110(4). doi:10.1103/PhysRevLett.110.046602 apa: Ares, N., Golovach, V., Katsaros, G., Stoffel, M., Fournel, F., Glazman, L., … De Franceschi, S. (2013). Nature of tunable hole g factors in quantum dots. Physical Review Letters. American Physical Society. https://doi.org/10.1103/PhysRevLett.110.046602 chicago: Ares, Natalia, Vitaly Golovach, Georgios Katsaros, Mathieu Stoffel, Frank Fournel, Leonid Glazman, Oliver Schmidt, and Silvano De Franceschi. “Nature of Tunable Hole g Factors in Quantum Dots.” Physical Review Letters. American Physical Society, 2013. https://doi.org/10.1103/PhysRevLett.110.046602. ieee: N. Ares et al., “Nature of tunable hole g factors in quantum dots,” Physical Review Letters, vol. 110, no. 4. American Physical Society, 2013. ista: Ares N, Golovach V, Katsaros G, Stoffel M, Fournel F, Glazman L, Schmidt O, De Franceschi S. 2013. Nature of tunable hole g factors in quantum dots. Physical Review Letters. 110(4). mla: Ares, Natalia, et al. “Nature of Tunable Hole g Factors in Quantum Dots.” Physical Review Letters, vol. 110, no. 4, American Physical Society, 2013, doi:10.1103/PhysRevLett.110.046602. short: N. Ares, V. Golovach, G. Katsaros, M. Stoffel, F. Fournel, L. Glazman, O. Schmidt, S. De Franceschi, Physical Review Letters 110 (2013). date_created: 2018-12-11T11:53:51Z date_published: 2013-01-23T00:00:00Z date_updated: 2021-01-12T06:53:01Z day: '23' doi: 10.1103/PhysRevLett.110.046602 extern: 1 intvolume: ' 110' issue: '4' main_file_link: - open_access: '1' url: http://arxiv.org/abs/1208.0476 month: '01' oa: 1 publication: Physical Review Letters publication_status: published publisher: American Physical Society publist_id: '5365' quality_controlled: 0 status: public title: Nature of tunable hole g factors in quantum dots type: journal_article volume: 110 year: '2013' ... --- _id: '1757' abstract: - lang: eng text: Self-assembled Ge wires with a height of only 3 unit cells and a length of up to 2 micrometers were grown on Si(001) by means of a catalyst-free method based on molecular beam epitaxy. The wires grow horizontally along either the [100] or the [010] direction. On atomically flat surfaces, they exhibit a highly uniform, triangular cross section. A simple thermodynamic model accounts for the existence of a preferential base width for longitudinal expansion, in quantitative agreement with the experimental findings. Despite the absence of intentional doping, the first transistor-type devices made from single wires show low-resistive electrical contacts and single-hole transport at sub-Kelvin temperatures. In view of their exceptionally small and self-defined cross section, these Ge wires hold promise for the realization of hole systems with exotic properties and provide a new development route for silicon-based nanoelectronics. acknowledgement: We acknowledge the financial support by the DFG SPP1386, P. Chen and D. J. Thurmer for MBE assistance, R. Wacquez for providing the ultrathin SOI wafers, and G. Bauer, Y. Hu, X. Jehl, S. Kiravittaya, C. Klöffel, E. J. H. Lee, F. Liu, D. Loss, and S. Mahapatra for helpful discussions. G. K. acknowledges support from the European commission via a Marie Curie Carrer Integration Grant. S. D. F. acknowledges support from the European Research Council through the starting grant program author: - first_name: Jianjun full_name: Zhang, Jianjun last_name: Zhang - first_name: Georgios full_name: Georgios Katsaros id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros - first_name: Francesco full_name: Montalenti, Francesco last_name: Montalenti - first_name: Daniele full_name: Scopece, Daniele last_name: Scopece - first_name: Roman full_name: Rezaev, Roman O last_name: Rezaev - first_name: Christine full_name: Mickel, Christine H last_name: Mickel - first_name: Bernd full_name: Rellinghaus, Bernd last_name: Rellinghaus - first_name: Leo full_name: Miglio, Leo P last_name: Miglio - first_name: Silvano full_name: De Franceschi, Silvano last_name: De Franceschi - first_name: Armando full_name: Rastelli, Armando last_name: Rastelli - first_name: Oliver full_name: Schmidt, Oliver G last_name: Schmidt citation: ama: Zhang J, Katsaros G, Montalenti F, et al. Monolithic growth of ultrathin Ge nanowires on Si(001) . Physical Review Letters. 2012;109(8). doi:10.1103/PhysRevLett.109.085502 apa: Zhang, J., Katsaros, G., Montalenti, F., Scopece, D., Rezaev, R., Mickel, C., … Schmidt, O. (2012). Monolithic growth of ultrathin Ge nanowires on Si(001) . Physical Review Letters. American Physical Society. https://doi.org/10.1103/PhysRevLett.109.085502 chicago: Zhang, Jianjun, Georgios Katsaros, Francesco Montalenti, Daniele Scopece, Roman Rezaev, Christine Mickel, Bernd Rellinghaus, et al. “Monolithic Growth of Ultrathin Ge Nanowires on Si(001) .” Physical Review Letters. American Physical Society, 2012. https://doi.org/10.1103/PhysRevLett.109.085502. ieee: J. Zhang et al., “Monolithic growth of ultrathin Ge nanowires on Si(001) ,” Physical Review Letters, vol. 109, no. 8. American Physical Society, 2012. ista: Zhang J, Katsaros G, Montalenti F, Scopece D, Rezaev R, Mickel C, Rellinghaus B, Miglio L, De Franceschi S, Rastelli A, Schmidt O. 2012. Monolithic growth of ultrathin Ge nanowires on Si(001) . Physical Review Letters. 109(8). mla: Zhang, Jianjun, et al. “Monolithic Growth of Ultrathin Ge Nanowires on Si(001) .” Physical Review Letters, vol. 109, no. 8, American Physical Society, 2012, doi:10.1103/PhysRevLett.109.085502. short: J. Zhang, G. Katsaros, F. Montalenti, D. Scopece, R. Rezaev, C. Mickel, B. Rellinghaus, L. Miglio, S. De Franceschi, A. Rastelli, O. Schmidt, Physical Review Letters 109 (2012). date_created: 2018-12-11T11:53:51Z date_published: 2012-08-23T00:00:00Z date_updated: 2021-01-12T06:53:00Z day: '23' doi: 10.1103/PhysRevLett.109.085502 extern: 1 intvolume: ' 109' issue: '8' main_file_link: - open_access: '1' url: http://arxiv.org/abs/1208.0666 month: '08' oa: 1 publication: Physical Review Letters publication_status: published publisher: American Physical Society publist_id: '5367' quality_controlled: 0 status: public title: 'Monolithic growth of ultrathin Ge nanowires on Si(001) ' type: journal_article volume: 109 year: '2012' ... --- _id: '1758' abstract: - lang: eng text: We studied the low-energy states of spin-1/2 quantum dots defined in InAs/InP nanowires and coupled to aluminum superconducting leads. By varying the superconducting gap Δ with a magnetic field B we investigated the transition from strong coupling Δ≪T K to weak-coupling Δ≫T K, where T K is the Kondo temperature. Below the critical field, we observe a persisting zero-bias Kondo resonance that vanishes only for low B or higher temperatures, leaving the room to more robust subgap structures at bias voltages between Δ and 2Δ. For strong and approximately symmetric tunnel couplings, a Josephson supercurrent is observed in addition to the Kondo peak. We ascribe the coexistence of a Kondo resonance and a superconducting gap to a significant density of intragap quasiparticle states, and the finite-bias subgap structures to tunneling through Shiba states. Our results, supported by numerical calculations, own relevance also in relation to tunnel-spectroscopy experiments aiming at the observation of Majorana fermions in hybrid nanostructures. acknowledgement: This work was supported by the EU Marie Curie program and by the Agence Nationale de la Recherche. R. A. acknowledges support from the Spanish Ministry of Science and Innovation through Grant No. FIS2009-08744 author: - first_name: Eduardo full_name: Lee, Eduardo J last_name: Lee - first_name: Xiaocheng full_name: Jiang, Xiaocheng last_name: Jiang - first_name: Ramón full_name: Aguado, Ramón last_name: Aguado - first_name: Georgios full_name: Georgios Katsaros id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros - first_name: Charles full_name: Lieber, Charles M last_name: Lieber - first_name: Silvano full_name: De Franceschi, Silvano last_name: De Franceschi citation: ama: Lee E, Jiang X, Aguado R, Katsaros G, Lieber C, De Franceschi S. Zero-bias anomaly in a nanowire quantum dot coupled to superconductors. Physical Review Letters. 2012;109(18). doi:10.1103/PhysRevLett.109.186802 apa: Lee, E., Jiang, X., Aguado, R., Katsaros, G., Lieber, C., & De Franceschi, S. (2012). Zero-bias anomaly in a nanowire quantum dot coupled to superconductors. Physical Review Letters. American Physical Society. https://doi.org/10.1103/PhysRevLett.109.186802 chicago: Lee, Eduardo, Xiaocheng Jiang, Ramón Aguado, Georgios Katsaros, Charles Lieber, and Silvano De Franceschi. “Zero-Bias Anomaly in a Nanowire Quantum Dot Coupled to Superconductors.” Physical Review Letters. American Physical Society, 2012. https://doi.org/10.1103/PhysRevLett.109.186802. ieee: E. Lee, X. Jiang, R. Aguado, G. Katsaros, C. Lieber, and S. De Franceschi, “Zero-bias anomaly in a nanowire quantum dot coupled to superconductors,” Physical Review Letters, vol. 109, no. 18. American Physical Society, 2012. ista: Lee E, Jiang X, Aguado R, Katsaros G, Lieber C, De Franceschi S. 2012. Zero-bias anomaly in a nanowire quantum dot coupled to superconductors. Physical Review Letters. 109(18). mla: Lee, Eduardo, et al. “Zero-Bias Anomaly in a Nanowire Quantum Dot Coupled to Superconductors.” Physical Review Letters, vol. 109, no. 18, American Physical Society, 2012, doi:10.1103/PhysRevLett.109.186802. short: E. Lee, X. Jiang, R. Aguado, G. Katsaros, C. Lieber, S. De Franceschi, Physical Review Letters 109 (2012). date_created: 2018-12-11T11:53:51Z date_published: 2012-10-31T00:00:00Z date_updated: 2021-01-12T06:53:01Z day: '31' doi: 10.1103/PhysRevLett.109.186802 extern: 1 intvolume: ' 109' issue: '18' main_file_link: - open_access: '1' url: http://arxiv.org/abs/1207.1259 month: '10' oa: 1 publication: Physical Review Letters publication_status: published publisher: American Physical Society publist_id: '5366' quality_controlled: 0 status: public title: Zero-bias anomaly in a nanowire quantum dot coupled to superconductors type: journal_article volume: 109 year: '2012' ... --- _id: '1756' abstract: - lang: eng text: We report on the electronic transport properties of multiple-gate devices fabricated from undoped silicon nanowires. Understanding and control of the relevant transport mechanisms was achieved by means of local electrostatic gating and temperature-dependent measurements. The roles of the source/drain contacts and of the silicon channel could be independently evaluated and tuned. Wrap gates surrounding the silicide-silicon contact interfaces were proved to be effective in inducing a full suppression of the contact Schottky barriers, thereby enabling carrier injection down to liquid helium temperature. By independently tuning the effective Schottky barrier heights, a variety of reconfigurable device functionalities could be obtained. In particular, the same nanowire device could be configured to work as a Schottky barrier transistor, a Schottky diode, or a p-n diode with tunable polarities. This versatility was eventually exploited to realize a NAND logic gate with gain well above one. acknowledgement: This work was supported by the Agence Nationale de la Recherche (ANR) through the ACCESS and COHESION projects and by the European Commission through the Chemtronics program MEST-CT-2005-020513 author: - first_name: Massimo full_name: Mongillo, Massimo last_name: Mongillo - first_name: Panayotis full_name: Spathis, Panayotis N last_name: Spathis - first_name: Georgios full_name: Georgios Katsaros id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros - first_name: Pascal full_name: Gentile, Pascal last_name: Gentile - first_name: Silvano full_name: De Franceschi, Silvano last_name: De Franceschi citation: ama: Mongillo M, Spathis P, Katsaros G, Gentile P, De Franceschi S. Multifunctional devices and logic gates with undoped silicon nanowires. Nano Letters. 2012;12(6):3074-3079. doi:10.1021/nl300930m apa: Mongillo, M., Spathis, P., Katsaros, G., Gentile, P., & De Franceschi, S. (2012). Multifunctional devices and logic gates with undoped silicon nanowires. Nano Letters. American Chemical Society. https://doi.org/10.1021/nl300930m chicago: Mongillo, Massimo, Panayotis Spathis, Georgios Katsaros, Pascal Gentile, and Silvano De Franceschi. “Multifunctional Devices and Logic Gates with Undoped Silicon Nanowires.” Nano Letters. American Chemical Society, 2012. https://doi.org/10.1021/nl300930m. ieee: M. Mongillo, P. Spathis, G. Katsaros, P. Gentile, and S. De Franceschi, “Multifunctional devices and logic gates with undoped silicon nanowires,” Nano Letters, vol. 12, no. 6. American Chemical Society, pp. 3074–3079, 2012. ista: Mongillo M, Spathis P, Katsaros G, Gentile P, De Franceschi S. 2012. Multifunctional devices and logic gates with undoped silicon nanowires. Nano Letters. 12(6), 3074–3079. mla: Mongillo, Massimo, et al. “Multifunctional Devices and Logic Gates with Undoped Silicon Nanowires.” Nano Letters, vol. 12, no. 6, American Chemical Society, 2012, pp. 3074–79, doi:10.1021/nl300930m. short: M. Mongillo, P. Spathis, G. Katsaros, P. Gentile, S. De Franceschi, Nano Letters 12 (2012) 3074–3079. date_created: 2018-12-11T11:53:50Z date_published: 2012-06-13T00:00:00Z date_updated: 2021-01-12T06:53:00Z day: '13' doi: 10.1021/nl300930m extern: 1 intvolume: ' 12' issue: '6' main_file_link: - open_access: '1' url: http://arxiv.org/abs/1208.1465 month: '06' oa: 1 page: 3074 - 3079 publication: Nano Letters publication_status: published publisher: American Chemical Society publist_id: '5368' quality_controlled: 0 status: public title: Multifunctional devices and logic gates with undoped silicon nanowires type: journal_article volume: 12 year: '2012' ... --- _id: '1754' abstract: - lang: eng text: 'We report on a technique enabling electrical control of the contact silicidation process in silicon nanowire devices. Undoped silicon nanowires were contacted by pairs of nickel electrodes and each contact was selectively silicided by means of the Joule effect. By a realtime monitoring of the nanowire electrical resistance during the contact silicidation process we were able to fabricate nickel-silicide/silicon/nickel- silicide devices with controlled silicon channel length down to 8 nm. ' acknowledgement: This work was supported by the Agence Nationale de la Recherche (ANR) through the ACCESS and COHESION projects and by the European Commission through the Chemtronics program MEST-CT-2005-020513 author: - first_name: Massimo full_name: Mongillo, Massimo last_name: Mongillo - first_name: Panayotis full_name: Spathis, Panayotis last_name: Spathis - first_name: Georgios full_name: Katsaros, Georgios id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros - first_name: Pascal full_name: Gentile, Pascal last_name: Gentile - first_name: Marc full_name: Sanquer, Marc last_name: Sanquer - first_name: Silvano full_name: De Franceschi, Silvano last_name: De Franceschi citation: ama: Mongillo M, Spathis P, Katsaros G, Gentile P, Sanquer M, De Franceschi S. Joule-assisted silicidation for short-channel silicon nanowire devices. ACS Nano. 2011;5(9):7117-7123. doi:10.1021/nn202524j apa: Mongillo, M., Spathis, P., Katsaros, G., Gentile, P., Sanquer, M., & De Franceschi, S. (2011). Joule-assisted silicidation for short-channel silicon nanowire devices. ACS Nano. American Chemical Society. https://doi.org/10.1021/nn202524j chicago: Mongillo, Massimo, Panayotis Spathis, Georgios Katsaros, Pascal Gentile, Marc Sanquer, and Silvano De Franceschi. “Joule-Assisted Silicidation for Short-Channel Silicon Nanowire Devices.” ACS Nano. American Chemical Society, 2011. https://doi.org/10.1021/nn202524j. ieee: M. Mongillo, P. Spathis, G. Katsaros, P. Gentile, M. Sanquer, and S. De Franceschi, “Joule-assisted silicidation for short-channel silicon nanowire devices,” ACS Nano, vol. 5, no. 9. American Chemical Society, pp. 7117–7123, 2011. ista: Mongillo M, Spathis P, Katsaros G, Gentile P, Sanquer M, De Franceschi S. 2011. Joule-assisted silicidation for short-channel silicon nanowire devices. ACS Nano. 5(9), 7117–7123. mla: Mongillo, Massimo, et al. “Joule-Assisted Silicidation for Short-Channel Silicon Nanowire Devices.” ACS Nano, vol. 5, no. 9, American Chemical Society, 2011, pp. 7117–23, doi:10.1021/nn202524j. short: M. Mongillo, P. Spathis, G. Katsaros, P. Gentile, M. Sanquer, S. De Franceschi, ACS Nano 5 (2011) 7117–7123. date_created: 2018-12-11T11:53:50Z date_published: 2011-09-27T00:00:00Z date_updated: 2021-01-12T06:52:59Z day: '27' doi: 10.1021/nn202524j extern: '1' external_id: arxiv: - '1110.5668' intvolume: ' 5' issue: '9' language: - iso: eng main_file_link: - open_access: '1' url: http://arxiv.org/abs/1110.5668 month: '09' oa: 1 oa_version: Preprint page: 7117 - 7123 publication: ACS Nano publication_status: published publisher: American Chemical Society publist_id: '5370' quality_controlled: '1' status: public title: Joule-assisted silicidation for short-channel silicon nanowire devices type: journal_article user_id: 2DF688A6-F248-11E8-B48F-1D18A9856A87 volume: 5 year: '2011' ... --- _id: '1755' abstract: - lang: eng text: Spin-selective tunneling of holes in SiGe nanocrystals contacted by normal-metal leads is reported. The spin selectivity arises from an interplay of the orbital effect of the magnetic field with the strong spin-orbit interaction present in the valence band of the semiconductor. We demonstrate both experimentally and theoretically that spin-selective tunneling in semiconductor nanostructures can be achieved without the use of ferromagnetic contacts. The reported effect, which relies on mixing the light and heavy holes, should be observable in a broad class of quantum-dot systems formed in semiconductors with a degenerate valence band. acknowledgement: The work was supported by the Agence Nationale de la Recherche (through the ACCESS and COHESION projects), U.S. DOE Contract No. DE-FG02-08ER46482 (Yale), and the Nanosciences Foundation at Grenoble, France. G. K. acknowledges support from the Deutsche Forschungsgemeinschaft author: - first_name: Georgios full_name: Georgios Katsaros id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros - first_name: Vitaly full_name: Golovach, Vitaly N last_name: Golovach - first_name: Panayotis full_name: Spathis, Panayotis N last_name: Spathis - first_name: Natalia full_name: Ares, Natalia last_name: Ares - first_name: Mathieu full_name: Stoffel, Mathieu last_name: Stoffel - first_name: Frank full_name: Fournel, Frank last_name: Fournel - first_name: Oliver full_name: Schmidt, Oliver G last_name: Schmidt - first_name: Leonid full_name: Glazman, Leonid I last_name: Glazman - first_name: Silvano full_name: De Franceschi, Silvano last_name: De Franceschi citation: ama: Katsaros G, Golovach V, Spathis P, et al. Observation of spin-selective tunneling in sige nanocrystals. Physical Review Letters. 2011;107(24). doi:10.1103/PhysRevLett.107.246601 apa: Katsaros, G., Golovach, V., Spathis, P., Ares, N., Stoffel, M., Fournel, F., … De Franceschi, S. (2011). Observation of spin-selective tunneling in sige nanocrystals. Physical Review Letters. American Physical Society. https://doi.org/10.1103/PhysRevLett.107.246601 chicago: Katsaros, Georgios, Vitaly Golovach, Panayotis Spathis, Natalia Ares, Mathieu Stoffel, Frank Fournel, Oliver Schmidt, Leonid Glazman, and Silvano De Franceschi. “Observation of Spin-Selective Tunneling in Sige Nanocrystals.” Physical Review Letters. American Physical Society, 2011. https://doi.org/10.1103/PhysRevLett.107.246601. ieee: G. Katsaros et al., “Observation of spin-selective tunneling in sige nanocrystals,” Physical Review Letters, vol. 107, no. 24. American Physical Society, 2011. ista: Katsaros G, Golovach V, Spathis P, Ares N, Stoffel M, Fournel F, Schmidt O, Glazman L, De Franceschi S. 2011. Observation of spin-selective tunneling in sige nanocrystals. Physical Review Letters. 107(24). mla: Katsaros, Georgios, et al. “Observation of Spin-Selective Tunneling in Sige Nanocrystals.” Physical Review Letters, vol. 107, no. 24, American Physical Society, 2011, doi:10.1103/PhysRevLett.107.246601. short: G. Katsaros, V. Golovach, P. Spathis, N. Ares, M. Stoffel, F. Fournel, O. Schmidt, L. Glazman, S. De Franceschi, Physical Review Letters 107 (2011). date_created: 2018-12-11T11:53:50Z date_published: 2011-12-07T00:00:00Z date_updated: 2021-01-12T06:53:00Z day: '07' doi: 10.1103/PhysRevLett.107.246601 extern: 1 intvolume: ' 107' issue: '24' main_file_link: - open_access: '1' url: http://arxiv.org/abs/1107.3919 month: '12' oa: 1 publication: Physical Review Letters publication_status: published publisher: American Physical Society publist_id: '5369' quality_controlled: 0 status: public title: Observation of spin-selective tunneling in sige nanocrystals type: journal_article volume: 107 year: '2011' ... --- _id: '1752' abstract: - lang: eng text: The epitaxial growth of germanium on silicon leads to the self-assembly of SiGe nanocrystals by a process that allows the size, composition and position of the nanocrystals to be controlled. This level of control, combined with an inherent compatibility with silicon technology, could prove useful in nanoelectronic applications. Here, we report the confinement of holes in quantum-dot devices made by directly contacting individual SiGe nanocrystals with aluminium electrodes, and the production of hybrid superconductor- semiconductor devices, such as resonant supercurrent transistors, when the quantum dot is strongly coupled to the electrodes. Charge transport measurements on weakly coupled quantum dots reveal discrete energy spectra, with the confined hole states displaying anisotropic gyromagnetic factors and strong spin-orbit coupling with pronounced dependences on gate voltage and magnetic field. acknowledgement: We also acknowledge support from the Agence Nationale de la Recherche (through the ACCESS and COHESION projects). G.K. acknowledges further support from the Deutsche Forschungsgemeinschaft (grant no. KA 2922/1-1) author: - first_name: Georgios full_name: Georgios Katsaros id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros - first_name: Panayotis full_name: Spathis, Panayotis N last_name: Spathis - first_name: Mathieu full_name: Stoffel, Mathieu last_name: Stoffel - first_name: Frank full_name: Fournel, Frank last_name: Fournel - first_name: Massimo full_name: Mongillo, Massimo last_name: Mongillo - first_name: Vincent full_name: Bouchiat, Vincent last_name: Bouchiat - first_name: François full_name: Lefloch, François last_name: Lefloch - first_name: Armando full_name: Rastelli, Armando last_name: Rastelli - first_name: Oliver full_name: Schmidt, Oliver G last_name: Schmidt - first_name: Silvano full_name: De Franceschi, Silvano last_name: De Franceschi citation: ama: Katsaros G, Spathis P, Stoffel M, et al. Hybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals on silicon. Nature Nanotechnology. 2010;5(6):458-464. doi:10.1038/nnano.2010.84 apa: Katsaros, G., Spathis, P., Stoffel, M., Fournel, F., Mongillo, M., Bouchiat, V., … De Franceschi, S. (2010). Hybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals on silicon. Nature Nanotechnology. Nature Publishing Group. https://doi.org/10.1038/nnano.2010.84 chicago: Katsaros, Georgios, Panayotis Spathis, Mathieu Stoffel, Frank Fournel, Massimo Mongillo, Vincent Bouchiat, François Lefloch, Armando Rastelli, Oliver Schmidt, and Silvano De Franceschi. “Hybrid Superconductor-Semiconductor Devices Made from Self-Assembled SiGe Nanocrystals on Silicon.” Nature Nanotechnology. Nature Publishing Group, 2010. https://doi.org/10.1038/nnano.2010.84. ieee: G. Katsaros et al., “Hybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals on silicon,” Nature Nanotechnology, vol. 5, no. 6. Nature Publishing Group, pp. 458–464, 2010. ista: Katsaros G, Spathis P, Stoffel M, Fournel F, Mongillo M, Bouchiat V, Lefloch F, Rastelli A, Schmidt O, De Franceschi S. 2010. Hybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals on silicon. Nature Nanotechnology. 5(6), 458–464. mla: Katsaros, Georgios, et al. “Hybrid Superconductor-Semiconductor Devices Made from Self-Assembled SiGe Nanocrystals on Silicon.” Nature Nanotechnology, vol. 5, no. 6, Nature Publishing Group, 2010, pp. 458–64, doi:10.1038/nnano.2010.84. short: G. Katsaros, P. Spathis, M. Stoffel, F. Fournel, M. Mongillo, V. Bouchiat, F. Lefloch, A. Rastelli, O. Schmidt, S. De Franceschi, Nature Nanotechnology 5 (2010) 458–464. date_created: 2018-12-11T11:53:49Z date_published: 2010-06-01T00:00:00Z date_updated: 2021-01-12T06:52:59Z day: '01' doi: 10.1038/nnano.2010.84 extern: 1 intvolume: ' 5' issue: '6' main_file_link: - open_access: '1' url: http://arxiv.org/abs/1005.1816 month: '06' oa: 1 page: 458 - 464 publication: Nature Nanotechnology publication_status: published publisher: Nature Publishing Group publist_id: '5372' quality_controlled: 0 status: public title: Hybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals on silicon type: journal_article volume: 5 year: '2010' ... --- _id: '1753' abstract: - lang: eng text: We investigate electronic transport in n-i-n GaN nanowires with and without AlN double barriers. The nanowires are grown by catalyst-free, plasma-assisted molecular beam epitaxy enabling abrupt GaN/AlN interfaces as well as longitudinal n-type doping modulation. At low temperature, transport in n-i-n GaN nanowires is dominated by the Coulomb blockade effect. Carriers are confined in the undoped middle region, forming single or multiple islands with a characteristic length of ∼100 nm. The incorporation of two AlN tunnel barriers causes confinement to occur within the GaN dot in between. In the case of a 6 nm thick dot and 2 nm thick barriers, we observe characteristic signatures of Coulomb-blockaded transport in single quantum dots with discrete energy states. For thinner dots and barriers, Coulomb-blockade effects do not play a significant role while the onset of resonant tunneling via the confined quantum levels is accompanied by a negative differential resistance surviving up to ∼150 K. acknowledgement: This research was partly funded by the Agence Nationale de la Recherche through the COHESION project. G.K. acknowledges further support from the Deutsche Forschungsgemeinschaft (Grant KA 2922/1-1) author: - first_name: Rudeeson full_name: Songmuang, Rudeeson last_name: Songmuang - first_name: Georgios full_name: Georgios Katsaros id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros - first_name: Eva full_name: Monroy, Eva last_name: Monroy - first_name: Panayotis full_name: Spathis, Panayotis N last_name: Spathis - first_name: Catherine full_name: Bougerol, Catherine last_name: Bougerol - first_name: Massimo full_name: Mongillo, Massimo last_name: Mongillo - first_name: Silvano full_name: De Franceschi, Silvano last_name: De Franceschi citation: ama: Songmuang R, Katsaros G, Monroy E, et al. Quantum transport in GaN/AlN double-barrier heterostructure nanowires. Nano Letters. 2010;10(9):3545-3550. doi:10.1021/nl1017578 apa: Songmuang, R., Katsaros, G., Monroy, E., Spathis, P., Bougerol, C., Mongillo, M., & De Franceschi, S. (2010). Quantum transport in GaN/AlN double-barrier heterostructure nanowires. Nano Letters. American Chemical Society. https://doi.org/10.1021/nl1017578 chicago: Songmuang, Rudeeson, Georgios Katsaros, Eva Monroy, Panayotis Spathis, Catherine Bougerol, Massimo Mongillo, and Silvano De Franceschi. “Quantum Transport in GaN/AlN Double-Barrier Heterostructure Nanowires.” Nano Letters. American Chemical Society, 2010. https://doi.org/10.1021/nl1017578. ieee: R. Songmuang et al., “Quantum transport in GaN/AlN double-barrier heterostructure nanowires,” Nano Letters, vol. 10, no. 9. American Chemical Society, pp. 3545–3550, 2010. ista: Songmuang R, Katsaros G, Monroy E, Spathis P, Bougerol C, Mongillo M, De Franceschi S. 2010. Quantum transport in GaN/AlN double-barrier heterostructure nanowires. Nano Letters. 10(9), 3545–3550. mla: Songmuang, Rudeeson, et al. “Quantum Transport in GaN/AlN Double-Barrier Heterostructure Nanowires.” Nano Letters, vol. 10, no. 9, American Chemical Society, 2010, pp. 3545–50, doi:10.1021/nl1017578. short: R. Songmuang, G. Katsaros, E. Monroy, P. Spathis, C. Bougerol, M. Mongillo, S. De Franceschi, Nano Letters 10 (2010) 3545–3550. date_created: 2018-12-11T11:53:49Z date_published: 2010-09-08T00:00:00Z date_updated: 2021-01-12T06:52:59Z day: '08' doi: 10.1021/nl1017578 extern: 1 intvolume: ' 10' issue: '9' main_file_link: - open_access: '1' url: http://arxiv.org/abs/1005.3637 month: '09' oa: 1 page: 3545 - 3550 publication: Nano Letters publication_status: published publisher: American Chemical Society publist_id: '5371' quality_controlled: 0 status: public title: Quantum transport in GaN/AlN double-barrier heterostructure nanowires type: journal_article volume: 10 year: '2010' ... --- _id: '1751' abstract: - lang: eng text: When strained Stranski-Krastanow islands are used as "self-assembled quantum dots," a key goal is to control the island position. Here we show that nanoscale grooves can control the nucleation of epitaxial Ge islands on Si(001), and can drive lateral motion of existing islands onto the grooves, even when the grooves are very narrow and shallow compared to the islands. A position centered on the groove minimizes energy. We use as prototype grooves the trenches which form naturally around islands. During coarsening, the shrinking islands move laterally to sit directly astride that trench. In subsequent growth, we demonstrate that islands nucleate on the "empty trenches" which remain on the surface after complete dissolution of the original islands. author: - first_name: Georgios full_name: Georgios Katsaros id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros - first_name: Jerry full_name: Tersoff, Jerry last_name: Tersoff - first_name: Mathieu full_name: Stoffel, Mathieu last_name: Stoffel - first_name: Armando full_name: Rastelli, Armando last_name: Rastelli - first_name: P full_name: Acosta-Diaz, P last_name: Acosta Diaz - first_name: Gouranga full_name: Kar, Gouranga S last_name: Kar - first_name: Giovanni full_name: Costantini, Giovanni last_name: Costantini - first_name: Oliver full_name: Schmidt, Oliver G last_name: Schmidt - first_name: Klaus full_name: Kern, Klaus last_name: Kern citation: ama: Katsaros G, Tersoff J, Stoffel M, et al. Positioning of strained islands by interaction with surface nanogrooves. Physical Review Letters. 2008;101(9). doi:10.1103/PhysRevLett.101.096103 apa: Katsaros, G., Tersoff, J., Stoffel, M., Rastelli, A., Acosta Diaz, P., Kar, G., … Kern, K. (2008). Positioning of strained islands by interaction with surface nanogrooves. Physical Review Letters. American Physical Society. https://doi.org/10.1103/PhysRevLett.101.096103 chicago: Katsaros, Georgios, Jerry Tersoff, Mathieu Stoffel, Armando Rastelli, P Acosta Diaz, Gouranga Kar, Giovanni Costantini, Oliver Schmidt, and Klaus Kern. “Positioning of Strained Islands by Interaction with Surface Nanogrooves.” Physical Review Letters. American Physical Society, 2008. https://doi.org/10.1103/PhysRevLett.101.096103. ieee: G. Katsaros et al., “Positioning of strained islands by interaction with surface nanogrooves,” Physical Review Letters, vol. 101, no. 9. American Physical Society, 2008. ista: Katsaros G, Tersoff J, Stoffel M, Rastelli A, Acosta Diaz P, Kar G, Costantini G, Schmidt O, Kern K. 2008. Positioning of strained islands by interaction with surface nanogrooves. Physical Review Letters. 101(9). mla: Katsaros, Georgios, et al. “Positioning of Strained Islands by Interaction with Surface Nanogrooves.” Physical Review Letters, vol. 101, no. 9, American Physical Society, 2008, doi:10.1103/PhysRevLett.101.096103. short: G. Katsaros, J. Tersoff, M. Stoffel, A. Rastelli, P. Acosta Diaz, G. Kar, G. Costantini, O. Schmidt, K. Kern, Physical Review Letters 101 (2008). date_created: 2018-12-11T11:53:49Z date_published: 2008-08-29T00:00:00Z date_updated: 2021-01-12T06:52:58Z day: '29' doi: 10.1103/PhysRevLett.101.096103 extern: 1 intvolume: ' 101' issue: '9' month: '08' publication: Physical Review Letters publication_status: published publisher: American Physical Society publist_id: '5373' quality_controlled: 0 status: public title: Positioning of strained islands by interaction with surface nanogrooves type: journal_article volume: 101 year: '2008' ... --- _id: '1749' abstract: - lang: eng text: Scanning probe microscopy; Semiconductor quantum dots; Composition gradients; Composition profiles; Nanotomography; Single quantum dots; Strained sige/si; Three-dimensional (3D); Wet-chemical etchings; X-ray scattering measurements; quantum dot; methodology; nanotechnology; optical tomography; scanning probe microscopy; three dimensional imaging; Imaging, Three-Dimensional; Materials Testing; Microscopy, Scanning Probe; Nanotechnology; Quantum Dots; Tomography, acknowledgement: This work was supported by the BMBF (No. 03N8711) and the EU project D-DotFET (No. 012150) author: - first_name: Armando full_name: Rastelli, Armando last_name: Rastelli - first_name: Mathieu full_name: Stoffel, Mathieu last_name: Stoffel - first_name: Ângelo full_name: Malachias, Ângelo S last_name: Malachias - first_name: Tsvetelina full_name: Merdzhanova, Tsvetelina last_name: Merdzhanova - first_name: Georgios full_name: Georgios Katsaros id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros - first_name: Klaus full_name: Kern, Klaus last_name: Kern - first_name: Till full_name: Metzger, Till H last_name: Metzger - first_name: Oliver full_name: Schmidt, Oliver G last_name: Schmidt citation: ama: Rastelli A, Stoffel M, Malachias Â, et al. Three-dimensional composition profiles of single quantum dots determined by scanning-probe-microscopy-based nanotomography. Nano Letters. 2008;8(5):1404-1409. doi:10.1021/nl080290y apa: Rastelli, A., Stoffel, M., Malachias, Â., Merdzhanova, T., Katsaros, G., Kern, K., … Schmidt, O. (2008). Three-dimensional composition profiles of single quantum dots determined by scanning-probe-microscopy-based nanotomography. Nano Letters. American Chemical Society. https://doi.org/10.1021/nl080290y chicago: Rastelli, Armando, Mathieu Stoffel, Ângelo Malachias, Tsvetelina Merdzhanova, Georgios Katsaros, Klaus Kern, Till Metzger, and Oliver Schmidt. “Three-Dimensional Composition Profiles of Single Quantum Dots Determined by Scanning-Probe-Microscopy-Based Nanotomography.” Nano Letters. American Chemical Society, 2008. https://doi.org/10.1021/nl080290y. ieee: A. Rastelli et al., “Three-dimensional composition profiles of single quantum dots determined by scanning-probe-microscopy-based nanotomography,” Nano Letters, vol. 8, no. 5. American Chemical Society, pp. 1404–1409, 2008. ista: Rastelli A, Stoffel M, Malachias Â, Merdzhanova T, Katsaros G, Kern K, Metzger T, Schmidt O. 2008. Three-dimensional composition profiles of single quantum dots determined by scanning-probe-microscopy-based nanotomography. Nano Letters. 8(5), 1404–1409. mla: Rastelli, Armando, et al. “Three-Dimensional Composition Profiles of Single Quantum Dots Determined by Scanning-Probe-Microscopy-Based Nanotomography.” Nano Letters, vol. 8, no. 5, American Chemical Society, 2008, pp. 1404–09, doi:10.1021/nl080290y. short: A. Rastelli, M. Stoffel, Â. Malachias, T. Merdzhanova, G. Katsaros, K. Kern, T. Metzger, O. Schmidt, Nano Letters 8 (2008) 1404–1409. date_created: 2018-12-11T11:53:48Z date_published: 2008-05-01T00:00:00Z date_updated: 2021-01-12T06:52:57Z day: '01' doi: 10.1021/nl080290y extern: 1 intvolume: ' 8' issue: '5' month: '05' page: 1404 - 1409 publication: Nano Letters publication_status: published publisher: American Chemical Society publist_id: '5374' quality_controlled: 0 status: public title: Three-dimensional composition profiles of single quantum dots determined by scanning-probe-microscopy-based nanotomography type: journal_article volume: 8 year: '2008' ... --- _id: '1750' abstract: - lang: eng text: The authors investigate the composition profile of SiGe islands after capping with Si to form quantum dots, using a two step etching procedure and atomic force microscopy. Initially, the Si capping layers are removed by etching selectively Si over Ge and then the composition of the disclosed islands is addressed by selectively etching Ge over Si. For samples grown at 580 °C the authors show that even when overgrowth leads to a flat Si surface and the islands undergo strong morphological changes, a Ge-rich core region is still preserved in the dot. At high growth and overgrowth temperatures (740 °C), the experiments show that the newly formed base of the buried islands is more Si rich than their top. Furthermore, the authors find that for the growth conditions used, no lateral motion takes place during capping. author: - first_name: Georgios full_name: Georgios Katsaros id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros - first_name: Mathieu full_name: Stoffel, Mathieu last_name: Stoffel - first_name: Armando full_name: Rastelli, Armando last_name: Rastelli - first_name: Oliver full_name: Schmidt, Oliver G last_name: Schmidt - first_name: Klaus full_name: Kern, Klaus last_name: Kern - first_name: Jerry full_name: Tersoff, Jerry last_name: Tersoff citation: ama: Katsaros G, Stoffel M, Rastelli A, Schmidt O, Kern K, Tersoff J. Three-dimensional isocompositional profiles of buried SiGeSi (001) islands. Applied Physics Letters. 2007;91(1). doi:10.1063/1.2752730 apa: Katsaros, G., Stoffel, M., Rastelli, A., Schmidt, O., Kern, K., & Tersoff, J. (2007). Three-dimensional isocompositional profiles of buried SiGeSi (001) islands. Applied Physics Letters. American Institute of Physics. https://doi.org/10.1063/1.2752730 chicago: Katsaros, Georgios, Mathieu Stoffel, Armando Rastelli, Oliver Schmidt, Klaus Kern, and Jerry Tersoff. “Three-Dimensional Isocompositional Profiles of Buried SiGeSi (001) Islands.” Applied Physics Letters. American Institute of Physics, 2007. https://doi.org/10.1063/1.2752730. ieee: G. Katsaros, M. Stoffel, A. Rastelli, O. Schmidt, K. Kern, and J. Tersoff, “Three-dimensional isocompositional profiles of buried SiGeSi (001) islands,” Applied Physics Letters, vol. 91, no. 1. American Institute of Physics, 2007. ista: Katsaros G, Stoffel M, Rastelli A, Schmidt O, Kern K, Tersoff J. 2007. Three-dimensional isocompositional profiles of buried SiGeSi (001) islands. Applied Physics Letters. 91(1). mla: Katsaros, Georgios, et al. “Three-Dimensional Isocompositional Profiles of Buried SiGeSi (001) Islands.” Applied Physics Letters, vol. 91, no. 1, American Institute of Physics, 2007, doi:10.1063/1.2752730. short: G. Katsaros, M. Stoffel, A. Rastelli, O. Schmidt, K. Kern, J. Tersoff, Applied Physics Letters 91 (2007). date_created: 2018-12-11T11:53:48Z date_published: 2007-01-01T00:00:00Z date_updated: 2021-01-12T06:52:58Z day: '01' doi: 10.1063/1.2752730 extern: 1 intvolume: ' 91' issue: '1' month: '01' publication: Applied Physics Letters publication_status: published publisher: American Institute of Physics publist_id: '5375' quality_controlled: 0 status: public title: Three-dimensional isocompositional profiles of buried SiGeSi (001) islands type: journal_article volume: 91 year: '2007' ... --- _id: '1745' abstract: - lang: eng text: SiGe islands grown by deposition of 10 monolayers of Ge on Si(0 0 1) at 740 °C were investigated by using a combination of selective wet chemical etching and atomic force microscopy. The used etchant, a solution consisting of ammonium hydroxide and hydrogen peroxide, shows a high selectivity of Ge over SixGe1-x and is characterized by relatively slow etching rates for Si-rich alloys. By performing successive etching experiments on the same sample area, we are able to gain a deeper insight into the lateral displacement the islands undergo during post growth annealing. author: - first_name: Georgios full_name: Georgios Katsaros id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros - first_name: Armando full_name: Rastelli, Armando last_name: Rastelli - first_name: Mathieu full_name: Stoffel, Mathieu last_name: Stoffel - first_name: Giovanni full_name: Isella, Giovanni last_name: Isella - first_name: Hans full_name: Von Känel, Hans last_name: Von Känel - first_name: Alexander full_name: Bittner, Alexander M last_name: Bittner - first_name: Jerry full_name: Tersoff, Jerry last_name: Tersoff - first_name: Ulrich full_name: Denker, Ulrich last_name: Denker - first_name: Oliver full_name: Schmidt, Oliver G last_name: Schmidt - first_name: Giovanni full_name: Costantini, Giovanni last_name: Costantini - first_name: Klaus full_name: Kern, Klaus last_name: Kern citation: ama: Katsaros G, Rastelli A, Stoffel M, et al. Investigating the lateral motion of SiGe islands by selective chemical etching. Surface Science. 2006;600(12):2608-2613. doi:10.1016/j.susc.2006.04.027 apa: Katsaros, G., Rastelli, A., Stoffel, M., Isella, G., Von Känel, H., Bittner, A., … Kern, K. (2006). Investigating the lateral motion of SiGe islands by selective chemical etching. Surface Science. Elsevier. https://doi.org/10.1016/j.susc.2006.04.027 chicago: Katsaros, Georgios, Armando Rastelli, Mathieu Stoffel, Giovanni Isella, Hans Von Känel, Alexander Bittner, Jerry Tersoff, et al. “Investigating the Lateral Motion of SiGe Islands by Selective Chemical Etching.” Surface Science. Elsevier, 2006. https://doi.org/10.1016/j.susc.2006.04.027. ieee: G. Katsaros et al., “Investigating the lateral motion of SiGe islands by selective chemical etching,” Surface Science, vol. 600, no. 12. Elsevier, pp. 2608–2613, 2006. ista: Katsaros G, Rastelli A, Stoffel M, Isella G, Von Känel H, Bittner A, Tersoff J, Denker U, Schmidt O, Costantini G, Kern K. 2006. Investigating the lateral motion of SiGe islands by selective chemical etching. Surface Science. 600(12), 2608–2613. mla: Katsaros, Georgios, et al. “Investigating the Lateral Motion of SiGe Islands by Selective Chemical Etching.” Surface Science, vol. 600, no. 12, Elsevier, 2006, pp. 2608–13, doi:10.1016/j.susc.2006.04.027. short: G. Katsaros, A. Rastelli, M. Stoffel, G. Isella, H. Von Känel, A. Bittner, J. Tersoff, U. Denker, O. Schmidt, G. Costantini, K. Kern, Surface Science 600 (2006) 2608–2613. date_created: 2018-12-11T11:53:47Z date_published: 2006-06-15T00:00:00Z date_updated: 2021-01-12T06:52:56Z day: '15' doi: 10.1016/j.susc.2006.04.027 extern: 1 intvolume: ' 600' issue: '12' month: '06' page: 2608 - 2613 publication: Surface Science publication_status: published publisher: Elsevier publist_id: '5379' quality_controlled: 0 status: public title: Investigating the lateral motion of SiGe islands by selective chemical etching type: journal_article volume: 600 year: '2006' ... --- _id: '1747' abstract: - lang: eng text: 'We report on recent advances in the understanding of surface processes occurring during growth and post-growth annealing of strained islands which may find application as self-assembled quantum dots. We investigate the model system SiGe/Si(0 0 1) by a new approach based on "reading the footprints" which islands leave on the substrate during their growth and evolution. Such footprints consist of trenches carved in the Si substrate. We distinguish between surface footprints and footprints buried below the islands. The former allow us to discriminate islands which are in the process of growing from those which are shrinking. Islands with steep morphologies grow at the expense of smaller and shallower islands, consistent with the kinetics of anomalous coarsening. While shrinking, islands change their shape according to thermodynamic predictions. Buried footprints are investigated by removing the SiGe epilayer by means of selective wet chemical etching. Their reading shows that: (i) during post-growth annealing islands move laterally because of surface-mediated Si-Ge intermixing; (ii) a tree-ring structure of trenches is created by dislocated islands during their "cyclic" growth. This allows us to distinguish coherent from dislocated islands and to establish whether the latter are the result of island coalescence.' acknowledgement: This work was supported by the BMBF (03N8711) author: - first_name: Armando full_name: Rastelli, Armando last_name: Rastelli - first_name: Mathieu full_name: Stoffel, Mathieu last_name: Stoffel - first_name: Georgios full_name: Georgios Katsaros id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros - first_name: Jerry full_name: Tersoff, Jerry last_name: Tersoff - first_name: Ulrich full_name: Denker, Ulrich last_name: Denker - first_name: Tsvetelina full_name: Merdzhanova, Tsvetelina last_name: Merdzhanova - first_name: Gouranga full_name: Kar, Gouranga S last_name: Kar - first_name: Giovanni full_name: Costantini, Giovanni last_name: Costantini - first_name: Klaus full_name: Kern, Klaus last_name: Kern - first_name: Hans full_name: Von Känel, Hans last_name: Von Känel - first_name: Oliver full_name: Schmidt, Oliver G last_name: Schmidt citation: ama: Rastelli A, Stoffel M, Katsaros G, et al. Reading the footprints of strained islands. Microelectronics Journal. 2006;37(12):1471-1476. doi:10.1016/j.mejo.2006.05.029 apa: Rastelli, A., Stoffel, M., Katsaros, G., Tersoff, J., Denker, U., Merdzhanova, T., … Schmidt, O. (2006). Reading the footprints of strained islands. Microelectronics Journal. Elsevier. https://doi.org/10.1016/j.mejo.2006.05.029 chicago: Rastelli, Armando, Mathieu Stoffel, Georgios Katsaros, Jerry Tersoff, Ulrich Denker, Tsvetelina Merdzhanova, Gouranga Kar, et al. “Reading the Footprints of Strained Islands.” Microelectronics Journal. Elsevier, 2006. https://doi.org/10.1016/j.mejo.2006.05.029. ieee: A. Rastelli et al., “Reading the footprints of strained islands,” Microelectronics Journal, vol. 37, no. 12. Elsevier, pp. 1471–1476, 2006. ista: Rastelli A, Stoffel M, Katsaros G, Tersoff J, Denker U, Merdzhanova T, Kar G, Costantini G, Kern K, Von Känel H, Schmidt O. 2006. Reading the footprints of strained islands. Microelectronics Journal. 37(12), 1471–1476. mla: Rastelli, Armando, et al. “Reading the Footprints of Strained Islands.” Microelectronics Journal, vol. 37, no. 12, Elsevier, 2006, pp. 1471–76, doi:10.1016/j.mejo.2006.05.029. short: A. Rastelli, M. Stoffel, G. Katsaros, J. Tersoff, U. Denker, T. Merdzhanova, G. Kar, G. Costantini, K. Kern, H. Von Känel, O. Schmidt, Microelectronics Journal 37 (2006) 1471–1476. date_created: 2018-12-11T11:53:47Z date_published: 2006-12-01T00:00:00Z date_updated: 2021-01-12T06:52:57Z day: '01' doi: 10.1016/j.mejo.2006.05.029 extern: 1 intvolume: ' 37' issue: '12' month: '12' page: 1471 - 1476 publication: Microelectronics Journal publication_status: published publisher: Elsevier publist_id: '5377' quality_controlled: 0 status: public title: Reading the footprints of strained islands type: journal_article volume: 37 year: '2006' ... --- _id: '1746' abstract: - lang: eng text: 'A microscopic picture for the GaAs overgrowth of self-organized InAs/GaAs(001) quantum dots is developed. Scanning tunneling microscopy measurements reveal two capping regimes: the first being characterized by a dot shrinking and a backward pyramid-to-dome shape transition. This regime is governed by fast dynamics resulting in island morphologies close to thermodynamic equilibrium. The second regime is marked by a true overgrowth and is controlled by kinetically limited surface diffusion processes. A simple model is developed to describe the observed structural changes which are rationalized in terms of energetic minimization driven by lattice mismatch and alloying.' author: - first_name: Giovanni full_name: Costantini, Giovanni last_name: Costantini - first_name: Armando full_name: Rastelli, Armando last_name: Rastelli - first_name: Carlos full_name: Manzano, Carlos last_name: Manzano - first_name: P full_name: Acosta-Diaz, P last_name: Acosta Diaz - first_name: Rudeeson full_name: Songmuang, Rudeeson last_name: Songmuang - first_name: Georgios full_name: Georgios Katsaros id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros - first_name: Oliver full_name: Schmidt, Oliver G last_name: Schmidt - first_name: Klaus full_name: Kern, Klaus last_name: Kern citation: ama: Costantini G, Rastelli A, Manzano C, et al. Interplay between thermodynamics and kinetics in the capping of InAs/GaAs (001) quantum dots. Physical Review Letters. 2006;96(22). doi:10.1103/PhysRevLett.96.226106 apa: Costantini, G., Rastelli, A., Manzano, C., Acosta Diaz, P., Songmuang, R., Katsaros, G., … Kern, K. (2006). Interplay between thermodynamics and kinetics in the capping of InAs/GaAs (001) quantum dots. Physical Review Letters. American Physical Society. https://doi.org/10.1103/PhysRevLett.96.226106 chicago: Costantini, Giovanni, Armando Rastelli, Carlos Manzano, P Acosta Diaz, Rudeeson Songmuang, Georgios Katsaros, Oliver Schmidt, and Klaus Kern. “Interplay between Thermodynamics and Kinetics in the Capping of InAs/GaAs (001) Quantum Dots.” Physical Review Letters. American Physical Society, 2006. https://doi.org/10.1103/PhysRevLett.96.226106. ieee: G. Costantini et al., “Interplay between thermodynamics and kinetics in the capping of InAs/GaAs (001) quantum dots,” Physical Review Letters, vol. 96, no. 22. American Physical Society, 2006. ista: Costantini G, Rastelli A, Manzano C, Acosta Diaz P, Songmuang R, Katsaros G, Schmidt O, Kern K. 2006. Interplay between thermodynamics and kinetics in the capping of InAs/GaAs (001) quantum dots. Physical Review Letters. 96(22). mla: Costantini, Giovanni, et al. “Interplay between Thermodynamics and Kinetics in the Capping of InAs/GaAs (001) Quantum Dots.” Physical Review Letters, vol. 96, no. 22, American Physical Society, 2006, doi:10.1103/PhysRevLett.96.226106. short: G. Costantini, A. Rastelli, C. Manzano, P. Acosta Diaz, R. Songmuang, G. Katsaros, O. Schmidt, K. Kern, Physical Review Letters 96 (2006). date_created: 2018-12-11T11:53:47Z date_published: 2006-01-01T00:00:00Z date_updated: 2021-01-12T06:52:56Z day: '01' doi: 10.1103/PhysRevLett.96.226106 extern: 1 intvolume: ' 96' issue: '22' month: '01' publication: Physical Review Letters publication_status: published publisher: American Physical Society publist_id: '5378' quality_controlled: 0 status: public title: Interplay between thermodynamics and kinetics in the capping of InAs/GaAs (001) quantum dots type: journal_article volume: 96 year: '2006' ... --- _id: '1748' abstract: - lang: eng text: The authors apply selective wet chemical etching and atomic force microscopy to reveal the three-dimensional shape of SiGeSi (001) islands after capping with Si. Although the "self-assembled quantum dots" remain practically unaffected by capping in the temperature range of 300-450 °C, significant morphological changes take place on the Si surface. At 450 °C, the morphology of the capping layer (Si matrix) evolves toward an intriguing semifacetted structure, which we call a "ziggurat," giving the misleading impression of a stepped SiGe island shape. author: - first_name: Georgios full_name: Georgios Katsaros id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros - first_name: Armando full_name: Rastelli, Armando last_name: Rastelli - first_name: Mathieu full_name: Stoffel, Mathieu last_name: Stoffel - first_name: Giovanni full_name: Costantini, Giovanni last_name: Costantini - first_name: Oliver full_name: Schmidt, Oliver G last_name: Schmidt - first_name: Klaus full_name: Kern, Klaus last_name: Kern - first_name: Jerry full_name: Tersoff, Jerry last_name: Tersoff - first_name: Elisabeth full_name: Müller, Elisabeth last_name: Müller - first_name: Hans full_name: Von Känel, Hans last_name: Von Känel citation: ama: Katsaros G, Rastelli A, Stoffel M, et al. Evolution of buried semiconductor nanostructures and origin of stepped surface mounds during capping. Applied Physics Letters. 2006;89(25). doi:10.1063/1.2405876 apa: Katsaros, G., Rastelli, A., Stoffel, M., Costantini, G., Schmidt, O., Kern, K., … Von Känel, H. (2006). Evolution of buried semiconductor nanostructures and origin of stepped surface mounds during capping. Applied Physics Letters. American Institute of Physics. https://doi.org/10.1063/1.2405876 chicago: Katsaros, Georgios, Armando Rastelli, Mathieu Stoffel, Giovanni Costantini, Oliver Schmidt, Klaus Kern, Jerry Tersoff, Elisabeth Müller, and Hans Von Känel. “Evolution of Buried Semiconductor Nanostructures and Origin of Stepped Surface Mounds during Capping.” Applied Physics Letters. American Institute of Physics, 2006. https://doi.org/10.1063/1.2405876. ieee: G. Katsaros et al., “Evolution of buried semiconductor nanostructures and origin of stepped surface mounds during capping,” Applied Physics Letters, vol. 89, no. 25. American Institute of Physics, 2006. ista: Katsaros G, Rastelli A, Stoffel M, Costantini G, Schmidt O, Kern K, Tersoff J, Müller E, Von Känel H. 2006. Evolution of buried semiconductor nanostructures and origin of stepped surface mounds during capping. Applied Physics Letters. 89(25). mla: Katsaros, Georgios, et al. “Evolution of Buried Semiconductor Nanostructures and Origin of Stepped Surface Mounds during Capping.” Applied Physics Letters, vol. 89, no. 25, American Institute of Physics, 2006, doi:10.1063/1.2405876. short: G. Katsaros, A. Rastelli, M. Stoffel, G. Costantini, O. Schmidt, K. Kern, J. Tersoff, E. Müller, H. Von Känel, Applied Physics Letters 89 (2006). date_created: 2018-12-11T11:53:48Z date_published: 2006-01-01T00:00:00Z date_updated: 2021-01-12T06:52:57Z day: '01' doi: 10.1063/1.2405876 extern: 1 intvolume: ' 89' issue: '25' month: '01' publication: Applied Physics Letters publication_status: published publisher: American Institute of Physics publist_id: '5376' quality_controlled: 0 status: public title: Evolution of buried semiconductor nanostructures and origin of stepped surface mounds during capping type: journal_article volume: 89 year: '2006' ... --- _id: '1742' abstract: - lang: eng text: The effects of substrate temperature, growth rate, and postgrowth annealing on the composition of Ge islands grown on Si(001) were investigated with a combination of selective wet chemical etching and atomic force microscopy. A simple kinetic model comprising only surface diffusion processes can explain all the experimentally observed compositional profiles for pyramid and dome islands grown in the 560-620°C range. From this model three-dimensional compositional maps were extracted. By performing annealing experiments a change in the composition of the domes was observed. This could be explained as the result of the islands' movement induced by alloying-driven energy minimization. Also in this case kinetically hindered bulk diffusion processes are not needed to explain the experimental observations. acknowledgement: G. K. acknowledges the financial support of DAAD (Deutscher Akademischer Austausch Dienst) author: - first_name: Georgios full_name: Georgios Katsaros id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros - first_name: Giovanni full_name: Costantini, Giovanni last_name: Costantini - first_name: Mathieu full_name: Stoffel, Mathieu last_name: Stoffel - first_name: Rubén full_name: Esteban, Rubén last_name: Esteban - first_name: Alexander full_name: Bittner, Alexander M last_name: Bittner - first_name: Armando full_name: Rastelli, Armando last_name: Rastelli - first_name: Ulrich full_name: Denker, Ulrich last_name: Denker - first_name: Oliver full_name: Schmidt, Oliver G last_name: Schmidt - first_name: Klaus full_name: Kern, Klaus last_name: Kern citation: ama: Katsaros G, Costantini G, Stoffel M, et al. Kinetic origin of island intermixing during the growth of Ge on Si (001). Physical Review B - Condensed Matter and Materials Physics. 2005;72(19). doi:10.1103/PhysRevB.72.195320 apa: Katsaros, G., Costantini, G., Stoffel, M., Esteban, R., Bittner, A., Rastelli, A., … Kern, K. (2005). Kinetic origin of island intermixing during the growth of Ge on Si (001). Physical Review B - Condensed Matter and Materials Physics. American Physical Society. https://doi.org/10.1103/PhysRevB.72.195320 chicago: Katsaros, Georgios, Giovanni Costantini, Mathieu Stoffel, Rubén Esteban, Alexander Bittner, Armando Rastelli, Ulrich Denker, Oliver Schmidt, and Klaus Kern. “Kinetic Origin of Island Intermixing during the Growth of Ge on Si (001).” Physical Review B - Condensed Matter and Materials Physics. American Physical Society, 2005. https://doi.org/10.1103/PhysRevB.72.195320. ieee: G. Katsaros et al., “Kinetic origin of island intermixing during the growth of Ge on Si (001),” Physical Review B - Condensed Matter and Materials Physics, vol. 72, no. 19. American Physical Society, 2005. ista: Katsaros G, Costantini G, Stoffel M, Esteban R, Bittner A, Rastelli A, Denker U, Schmidt O, Kern K. 2005. Kinetic origin of island intermixing during the growth of Ge on Si (001). Physical Review B - Condensed Matter and Materials Physics. 72(19). mla: Katsaros, Georgios, et al. “Kinetic Origin of Island Intermixing during the Growth of Ge on Si (001).” Physical Review B - Condensed Matter and Materials Physics, vol. 72, no. 19, American Physical Society, 2005, doi:10.1103/PhysRevB.72.195320. short: G. Katsaros, G. Costantini, M. Stoffel, R. Esteban, A. Bittner, A. Rastelli, U. Denker, O. Schmidt, K. Kern, Physical Review B - Condensed Matter and Materials Physics 72 (2005). date_created: 2018-12-11T11:53:46Z date_published: 2005-11-15T00:00:00Z date_updated: 2021-01-12T06:52:55Z day: '15' doi: 10.1103/PhysRevB.72.195320 extern: 1 intvolume: ' 72' issue: '19' month: '11' publication: Physical Review B - Condensed Matter and Materials Physics publication_status: published publisher: American Physical Society publist_id: '5382' quality_controlled: 0 status: public title: Kinetic origin of island intermixing during the growth of Ge on Si (001) type: journal_article volume: 72 year: '2005' ... --- _id: '1740' abstract: - lang: eng text: 'A systematic study of the morphology of self-organized islands in the InAs/GaAs(0 0 1) and Ge/Si(0 0 1) systems is presented, based on high-resolution scanning tunneling microscopy measurements. We demonstrate that in both cases two main island families coexist: smaller pyramids bound by one type of shallow facets and larger multifaceted domes. Their structure and facet orientation are precisely determined, thus solving a highly debated argument in the case of InAs/GaAs(0 0 1). The comparison between the two material systems reveals the existence of striking similarities that extend even to the nature of island precursors and to the islands that form when depositing InGaAs or GeSi alloys. The implications of these observations on a possible universal description of the Stranski-Krastanow growth mode are discussed with respect to recent theoretical results.' author: - first_name: Giovanni full_name: Costantini, Giovanni last_name: Costantini - first_name: Armando full_name: Rastelli, Armando last_name: Rastelli - first_name: Carlos full_name: Manzano, Carlos last_name: Manzano - first_name: P full_name: Acosta-Diaz, P last_name: Acosta Diaz - first_name: Georgios full_name: Georgios Katsaros id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros - first_name: Rudeeson full_name: Songmuang, Rudeeson last_name: Songmuang - first_name: Oliver full_name: Schmidt, Oliver G last_name: Schmidt - first_name: Hans full_name: Von Känel, Hans last_name: Von Känel - first_name: Klaus full_name: Kern, Klaus last_name: Kern citation: ama: Costantini G, Rastelli A, Manzano C, et al. Pyramids and domes in the InAs/GaAs (0 0 1) and Ge/Si (0 0 1) systems. Journal of Crystal Growth. 2005;278(1-4):38-45. doi:10.1016/j.jcrysgro.2004.12.047 apa: Costantini, G., Rastelli, A., Manzano, C., Acosta Diaz, P., Katsaros, G., Songmuang, R., … Kern, K. (2005). Pyramids and domes in the InAs/GaAs (0 0 1) and Ge/Si (0 0 1) systems. Journal of Crystal Growth. Elsevier. https://doi.org/10.1016/j.jcrysgro.2004.12.047 chicago: Costantini, Giovanni, Armando Rastelli, Carlos Manzano, P Acosta Diaz, Georgios Katsaros, Rudeeson Songmuang, Oliver Schmidt, Hans Von Känel, and Klaus Kern. “Pyramids and Domes in the InAs/GaAs (0 0 1) and Ge/Si (0 0 1) Systems.” Journal of Crystal Growth. Elsevier, 2005. https://doi.org/10.1016/j.jcrysgro.2004.12.047. ieee: G. Costantini et al., “Pyramids and domes in the InAs/GaAs (0 0 1) and Ge/Si (0 0 1) systems,” Journal of Crystal Growth, vol. 278, no. 1–4. Elsevier, pp. 38–45, 2005. ista: Costantini G, Rastelli A, Manzano C, Acosta Diaz P, Katsaros G, Songmuang R, Schmidt O, Von Känel H, Kern K. 2005. Pyramids and domes in the InAs/GaAs (0 0 1) and Ge/Si (0 0 1) systems. Journal of Crystal Growth. 278(1–4), 38–45. mla: Costantini, Giovanni, et al. “Pyramids and Domes in the InAs/GaAs (0 0 1) and Ge/Si (0 0 1) Systems.” Journal of Crystal Growth, vol. 278, no. 1–4, Elsevier, 2005, pp. 38–45, doi:10.1016/j.jcrysgro.2004.12.047. short: G. Costantini, A. Rastelli, C. Manzano, P. Acosta Diaz, G. Katsaros, R. Songmuang, O. Schmidt, H. Von Känel, K. Kern, Journal of Crystal Growth 278 (2005) 38–45. date_created: 2018-12-11T11:53:45Z date_published: 2005-05-01T00:00:00Z date_updated: 2021-01-12T06:52:54Z day: '01' doi: 10.1016/j.jcrysgro.2004.12.047 extern: 1 intvolume: ' 278' issue: 1-4 month: '05' page: 38 - 45 publication: Journal of Crystal Growth publication_status: published publisher: Elsevier publist_id: '5384' quality_controlled: 0 status: public title: Pyramids and domes in the InAs/GaAs (0 0 1) and Ge/Si (0 0 1) systems type: journal_article volume: 278 year: '2005' ... --- _id: '1743' abstract: - lang: eng text: Laterally aligned multilayer GeSiSi islands grown on a patterned Si (001) substrate are disclosed by selective etching of Si in a KOH solution. This procedure allows us to visualize the vertical alignment of the islands in a three-dimensional perspective. Our technique reveals that partly coalesced double islands in the initial layer do not merge together, but instead gradually reproduce into well-separated double islands in upper layers. We attribute this effect to very thin spacer layers, which efficiently transfer the strain modulation of each island through the spacer layer to the surface. The etching rate of Si is reduced in tensile strained regions, which helps to preserve sufficient Si between the stacked islands to form a periodic array of freestanding and vertically modulated heterostructure pillars. acknowledgement: This work was supported by the BMBF (03N8711) and the EU NOE SANDiE author: - first_name: Zheyang full_name: Zhong, Zheyang last_name: Zhong - first_name: Georgios full_name: Georgios Katsaros id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros - first_name: Mathieu full_name: Stoffel, Mathieu last_name: Stoffel - first_name: Giovanni full_name: Costantini, Giovanni last_name: Costantini - first_name: Klaus full_name: Kern, Klaus last_name: Kern - first_name: Oliver full_name: Schmidt, Oliver G last_name: Schmidt - first_name: Neng full_name: Jin-Phillipp, Neng Y last_name: Jin Phillipp - first_name: Günther full_name: Bauer, Günther last_name: Bauer citation: ama: Zhong Z, Katsaros G, Stoffel M, et al. Periodic pillar structures by Si etching of multilayer GeSi/Si islands. Applied Physics Letters. 2005;87(26):1-3. doi:10.1063/1.2150278 apa: Zhong, Z., Katsaros, G., Stoffel, M., Costantini, G., Kern, K., Schmidt, O., … Bauer, G. (2005). Periodic pillar structures by Si etching of multilayer GeSi/Si islands. Applied Physics Letters. American Institute of Physics. https://doi.org/10.1063/1.2150278 chicago: Zhong, Zheyang, Georgios Katsaros, Mathieu Stoffel, Giovanni Costantini, Klaus Kern, Oliver Schmidt, Neng Jin Phillipp, and Günther Bauer. “Periodic Pillar Structures by Si Etching of Multilayer GeSi/Si Islands.” Applied Physics Letters. American Institute of Physics, 2005. https://doi.org/10.1063/1.2150278. ieee: Z. Zhong et al., “Periodic pillar structures by Si etching of multilayer GeSi/Si islands,” Applied Physics Letters, vol. 87, no. 26. American Institute of Physics, pp. 1–3, 2005. ista: Zhong Z, Katsaros G, Stoffel M, Costantini G, Kern K, Schmidt O, Jin Phillipp N, Bauer G. 2005. Periodic pillar structures by Si etching of multilayer GeSi/Si islands. Applied Physics Letters. 87(26), 1–3. mla: Zhong, Zheyang, et al. “Periodic Pillar Structures by Si Etching of Multilayer GeSi/Si Islands.” Applied Physics Letters, vol. 87, no. 26, American Institute of Physics, 2005, pp. 1–3, doi:10.1063/1.2150278. short: Z. Zhong, G. Katsaros, M. Stoffel, G. Costantini, K. Kern, O. Schmidt, N. Jin Phillipp, G. Bauer, Applied Physics Letters 87 (2005) 1–3. date_created: 2018-12-11T11:53:46Z date_published: 2005-01-01T00:00:00Z date_updated: 2021-01-12T06:52:55Z day: '01' doi: 10.1063/1.2150278 extern: 1 intvolume: ' 87' issue: '26' month: '01' page: 1 - 3 publication: Applied Physics Letters publication_status: published publisher: American Institute of Physics publist_id: '5381' quality_controlled: 0 status: public title: Periodic pillar structures by Si etching of multilayer GeSi/Si islands type: journal_article volume: 87 year: '2005' ... --- _id: '1744' abstract: - lang: eng text: This paper presents optical duobinary and dicode signalling, as alternatives to the binary format, in order to improve the transmission performance in the presense of non-linear effects in a dense wavelength division multiplex (WDM) optical system. Duobinary signalling is applied to an optical system to explore the reduction of stimulated Brillouin scattering (SBS) effects. Duobinary signalling suppresses the SBS effects, and an eye-opening improvement of 0.25 to 1.2 dB is achieved relative to binary transmission over a range of input power levels. An experimental study demonstrates that duobinary modulation suppresses the four wave mixing (FWM) products of a dense WDM system by a maximum of 3 dB. The suppression is maintained over a range of channel spacings. An investigation of the impact of fibre dispersion on FWM products under binary, duobinary and dicode modulation in a dense WDM system is then performed, with interchannel spacing and optical power variation. This leads to the development of a set of guidelines for the application areas, in which it is appropriate to use duobinary or dicode modulation in WDM systems as a means of mitigating the impact of FWM. acknowledgement: IET author: - first_name: Georgios full_name: Georgios Katsaros id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros - first_name: Izzat full_name: Darwazeh, Izzat Z last_name: Darwazeh - first_name: Phil full_name: Lane, Phil M last_name: Lane citation: ama: Katsaros G, Darwazeh I, Lane P. Non linear transmission effects in duobinary and dicode optical systems. IEE Proceedings - Optoelectronics. 2005;152(6):344-352. doi:10.1049/ip-opt:20045067 apa: Katsaros, G., Darwazeh, I., & Lane, P. (2005). Non linear transmission effects in duobinary and dicode optical systems. IEE Proceedings - Optoelectronics. Institute of Electrical Engineers. https://doi.org/10.1049/ip-opt:20045067 chicago: Katsaros, Georgios, Izzat Darwazeh, and Phil Lane. “Non Linear Transmission Effects in Duobinary and Dicode Optical Systems.” IEE Proceedings - Optoelectronics. Institute of Electrical Engineers, 2005. https://doi.org/10.1049/ip-opt:20045067. ieee: G. Katsaros, I. Darwazeh, and P. Lane, “Non linear transmission effects in duobinary and dicode optical systems,” IEE Proceedings - Optoelectronics, vol. 152, no. 6. Institute of Electrical Engineers, pp. 344–352, 2005. ista: Katsaros G, Darwazeh I, Lane P. 2005. Non linear transmission effects in duobinary and dicode optical systems. IEE Proceedings - Optoelectronics. 152(6), 344–352. mla: Katsaros, Georgios, et al. “Non Linear Transmission Effects in Duobinary and Dicode Optical Systems.” IEE Proceedings - Optoelectronics, vol. 152, no. 6, Institute of Electrical Engineers, 2005, pp. 344–52, doi:10.1049/ip-opt:20045067. short: G. Katsaros, I. Darwazeh, P. Lane, IEE Proceedings - Optoelectronics 152 (2005) 344–352. date_created: 2018-12-11T11:53:46Z date_published: 2005-12-01T00:00:00Z date_updated: 2021-01-12T06:52:55Z day: '01' doi: 10.1049/ip-opt:20045067 extern: 1 intvolume: ' 152' issue: '6' month: '12' page: 344 - 352 publication: IEE Proceedings - Optoelectronics publication_status: published publisher: Institute of Electrical Engineers publist_id: '5380' quality_controlled: 0 status: public title: Non linear transmission effects in duobinary and dicode optical systems type: journal_article volume: 152 year: '2005' ... --- _id: '1741' abstract: - lang: eng text: SiGe islands move laterally on a Si(001) substrate during in situ postgrowth annealing. This surprising behavior is revealed by an analysis of the substrate surface morphology after island removal using wet chemical etching. We explain the island motion by asymmetric surface-mediated alloying. Material leaves one side of the island by surface diffusion, and mixes with additional Si from the surrounding surface as it redeposits on the other side. Thus the island moves laterally while becoming larger and more dilute. acknowledgement: The work was supported by the BMBF (03N8711) author: - first_name: Ulrich full_name: Denker, Ulrich last_name: Denker - first_name: Armando full_name: Rastelli, Armando last_name: Rastelli - first_name: Mathieu full_name: Stoffel, Mathieu last_name: Stoffel - first_name: Jerry full_name: Tersoff, Jerry last_name: Tersoff - first_name: Georgios full_name: Georgios Katsaros id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros - first_name: Giovanni full_name: Costantini, Giovanni last_name: Costantini - first_name: Klaus full_name: Kern, Klaus last_name: Kern - first_name: Neng full_name: Jin-Phillipp, Neng Y last_name: Jin Phillipp - first_name: David full_name: Jesson, David E last_name: Jesson - first_name: Oliver full_name: Schmidt, Oliver G last_name: Schmidt citation: ama: Denker U, Rastelli A, Stoffel M, et al. Lateral motion of SiGe islands driven by surface-mediated alloying. Physical Review Letters. 2005;94(21). doi:10.1103/PhysRevLett.94.216103 apa: Denker, U., Rastelli, A., Stoffel, M., Tersoff, J., Katsaros, G., Costantini, G., … Schmidt, O. (2005). Lateral motion of SiGe islands driven by surface-mediated alloying. Physical Review Letters. American Physical Society. https://doi.org/10.1103/PhysRevLett.94.216103 chicago: Denker, Ulrich, Armando Rastelli, Mathieu Stoffel, Jerry Tersoff, Georgios Katsaros, Giovanni Costantini, Klaus Kern, Neng Jin Phillipp, David Jesson, and Oliver Schmidt. “Lateral Motion of SiGe Islands Driven by Surface-Mediated Alloying.” Physical Review Letters. American Physical Society, 2005. https://doi.org/10.1103/PhysRevLett.94.216103. ieee: U. Denker et al., “Lateral motion of SiGe islands driven by surface-mediated alloying,” Physical Review Letters, vol. 94, no. 21. American Physical Society, 2005. ista: Denker U, Rastelli A, Stoffel M, Tersoff J, Katsaros G, Costantini G, Kern K, Jin Phillipp N, Jesson D, Schmidt O. 2005. Lateral motion of SiGe islands driven by surface-mediated alloying. Physical Review Letters. 94(21). mla: Denker, Ulrich, et al. “Lateral Motion of SiGe Islands Driven by Surface-Mediated Alloying.” Physical Review Letters, vol. 94, no. 21, American Physical Society, 2005, doi:10.1103/PhysRevLett.94.216103. short: U. Denker, A. Rastelli, M. Stoffel, J. Tersoff, G. Katsaros, G. Costantini, K. Kern, N. Jin Phillipp, D. Jesson, O. Schmidt, Physical Review Letters 94 (2005). date_created: 2018-12-11T11:53:46Z date_published: 2005-06-03T00:00:00Z date_updated: 2021-01-12T06:52:54Z day: '03' doi: 10.1103/PhysRevLett.94.216103 extern: 1 intvolume: ' 94' issue: '21' month: '06' publication: Physical Review Letters publication_status: published publisher: American Physical Society publist_id: '5383' quality_controlled: 0 status: public title: Lateral motion of SiGe islands driven by surface-mediated alloying type: journal_article volume: 94 year: '2005' ... --- _id: '1738' abstract: - lang: eng text: New dyes of the type Ru(II)(bdmpp)(bpy) [where bdmpp is 2,6-bis(3,5-dimethyl-N-pyrazoyl)pyridine and bpy is 2,2′-bipyridine-4,4′-dicarboxylic acid] are prepared and characterized by infra-red (IR), mass (MS) and electrospray mass spectroscopy (ES-MS) as well as 1H NMR (1D and 2D) spectroscopies. The compounds present broad and very high intensity MLCT absorption bands in the visible and can be chemically anchored on TiO2 films via ester-like linkage involving carboxylato groups. These complexes have been tested with success as potential molecular antennas in dye-sensitized solar cells. Both opaque and transparent nanocrystalline TiO2 thin film electrodes obtained by a doctor blade technique sensitized by these complexes were incorporated in a sandwich type regenerative photoelectrochemical solar cell containing 0.1M LiI +0.01M I2 in propylene carbonate as well as a platinized conductive glass counter electrode. The cell was characterized by Raman spectroscopy under anodic and cathodic bias. Two new vibration bands were observed in the lower frequency region. The first one at 112 cm-1 is due to tri-iodide formed on the photoactive electrode, and the second one at 167 cm-1 is a sign of the dye/iodide interaction and corresponds to a vibration in a chemically stable "DI" intermediate species. Under direct sunlight illumination (solar irradiance of 60 mW/cm2) by using a composite polymer solid state electrolyte, the cell ITO/TiO2/[Ru(II)(bdmpp)(bpy)(NCS)](PF6)/electrolyte/Pt-ITO produced a continuous photocurrent as high as 4.29mA/cm2, and gave IPCE values about half of the corresponding values obtained by the standard N3 dye under the same conditions. The photovoltage is about 600 mV and the overall energy conversion cell's efficiency is as high as 1.72%. author: - first_name: Polycarpos full_name: Falaras, Polycarpos last_name: Falaras - first_name: Katerina full_name: Chryssou, Katerina last_name: Chryssou - first_name: Thomas full_name: Stergiopoulos, Thomas last_name: Stergiopoulos - first_name: Ioannis full_name: Arabatzis, Ioannis M last_name: Arabatzis - first_name: Georgios full_name: Georgios Katsaros id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros - first_name: Vincent full_name: Catalano, Vincent J last_name: Catalano - first_name: Raif full_name: Kurtaran, Raif last_name: Kurtaran - first_name: Anne full_name: Hugot-Le Goff, Anne last_name: Hugot Le Goff - first_name: Marie full_name: Bernard, Marie C last_name: Bernard citation: ama: 'Falaras P, Chryssou K, Stergiopoulos T, et al. Dye-sensitization of titanium dioxide thin films by Ru(II)-bpp-bpy complexes. In: Vol 4801. SPIE; 2002:125-135. doi:10.1117/12.452446' apa: Falaras, P., Chryssou, K., Stergiopoulos, T., Arabatzis, I., Katsaros, G., Catalano, V., … Bernard, M. (2002). Dye-sensitization of titanium dioxide thin films by Ru(II)-bpp-bpy complexes (Vol. 4801, pp. 125–135). Presented at the Organic Photovoltaics, SPIE. https://doi.org/10.1117/12.452446 chicago: Falaras, Polycarpos, Katerina Chryssou, Thomas Stergiopoulos, Ioannis Arabatzis, Georgios Katsaros, Vincent Catalano, Raif Kurtaran, Anne Hugot Le Goff, and Marie Bernard. “Dye-Sensitization of Titanium Dioxide Thin Films by Ru(II)-Bpp-Bpy Complexes,” 4801:125–35. SPIE, 2002. https://doi.org/10.1117/12.452446. ieee: P. Falaras et al., “Dye-sensitization of titanium dioxide thin films by Ru(II)-bpp-bpy complexes,” presented at the Organic Photovoltaics, 2002, vol. 4801, pp. 125–135. ista: Falaras P, Chryssou K, Stergiopoulos T, Arabatzis I, Katsaros G, Catalano V, Kurtaran R, Hugot Le Goff A, Bernard M. 2002. Dye-sensitization of titanium dioxide thin films by Ru(II)-bpp-bpy complexes. Organic Photovoltaics vol. 4801, 125–135. mla: Falaras, Polycarpos, et al. Dye-Sensitization of Titanium Dioxide Thin Films by Ru(II)-Bpp-Bpy Complexes. Vol. 4801, SPIE, 2002, pp. 125–35, doi:10.1117/12.452446. short: P. Falaras, K. Chryssou, T. Stergiopoulos, I. Arabatzis, G. Katsaros, V. Catalano, R. Kurtaran, A. Hugot Le Goff, M. Bernard, in:, SPIE, 2002, pp. 125–135. conference: name: Organic Photovoltaics date_created: 2018-12-11T11:53:45Z date_published: 2002-01-01T00:00:00Z date_updated: 2021-01-12T06:52:53Z day: '01' doi: 10.1117/12.452446 extern: 1 intvolume: ' 4801' month: '01' page: 125 - 135 publication_status: published publisher: SPIE publist_id: '5385' quality_controlled: 0 status: public title: Dye-sensitization of titanium dioxide thin films by Ru(II)-bpp-bpy complexes type: conference volume: 4801 year: '2002' ... --- _id: '1739' abstract: - lang: eng text: Poly(ethylene oxide)/titania polymer electrolyte based photoelectrochemical cells have been fabricated with Ru(dcbpy)2(NCS)2 complex as the sensitizer and nanoporous TiO2 films as photoanodes. The introduction of the titania filler into the poly(ethylene oxide) matrix reduces the crystallinity of the polymer and enhances the mobility of the 1-/13 - redox couple, resulting in outstanding overall conversion efficiency (4.2% under direct sunlight illumination) of the corresponding dye-sensitized nanocrystalline TiO2 solar cell, one of the best efficiencies reported to date for a solid-state device. acknowledgement: 'Financial support from NCSR “Demokritos” and GSRT-Greece is greatly acknowledged. ' author: - first_name: Thomas full_name: Stergiopoulos, Thomas last_name: Stergiopoulos - first_name: Iannis full_name: Arabatzis, Iannis M last_name: Arabatzis - first_name: Georgios full_name: Georgios Katsaros id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros - first_name: Polycarpos full_name: Falaras, Polycarpos last_name: Falaras citation: ama: Stergiopoulos T, Arabatzis I, Katsaros G, Falaras P. Binary Polyethylene Oxide/Titania Solid-State Redox Electrolyte for Highly Efficient Nanocrystalline TiO2 Photoelectrochemical Cells. Nano Letters. 2002;2(11):1259-1261. doi:10.1021/nl025798u apa: Stergiopoulos, T., Arabatzis, I., Katsaros, G., & Falaras, P. (2002). Binary Polyethylene Oxide/Titania Solid-State Redox Electrolyte for Highly Efficient Nanocrystalline TiO2 Photoelectrochemical Cells. Nano Letters. American Chemical Society. https://doi.org/10.1021/nl025798u chicago: Stergiopoulos, Thomas, Iannis Arabatzis, Georgios Katsaros, and Polycarpos Falaras. “Binary Polyethylene Oxide/Titania Solid-State Redox Electrolyte for Highly Efficient Nanocrystalline TiO2 Photoelectrochemical Cells.” Nano Letters. American Chemical Society, 2002. https://doi.org/10.1021/nl025798u. ieee: T. Stergiopoulos, I. Arabatzis, G. Katsaros, and P. Falaras, “Binary Polyethylene Oxide/Titania Solid-State Redox Electrolyte for Highly Efficient Nanocrystalline TiO2 Photoelectrochemical Cells,” Nano Letters, vol. 2, no. 11. American Chemical Society, pp. 1259–1261, 2002. ista: Stergiopoulos T, Arabatzis I, Katsaros G, Falaras P. 2002. Binary Polyethylene Oxide/Titania Solid-State Redox Electrolyte for Highly Efficient Nanocrystalline TiO2 Photoelectrochemical Cells. Nano Letters. 2(11), 1259–1261. mla: Stergiopoulos, Thomas, et al. “Binary Polyethylene Oxide/Titania Solid-State Redox Electrolyte for Highly Efficient Nanocrystalline TiO2 Photoelectrochemical Cells.” Nano Letters, vol. 2, no. 11, American Chemical Society, 2002, pp. 1259–61, doi:10.1021/nl025798u. short: T. Stergiopoulos, I. Arabatzis, G. Katsaros, P. Falaras, Nano Letters 2 (2002) 1259–1261. date_created: 2018-12-11T11:53:45Z date_published: 2002-11-01T00:00:00Z date_updated: 2021-01-12T06:52:53Z day: '01' doi: 10.1021/nl025798u extern: 1 intvolume: ' 2' issue: '11' month: '11' page: 1259 - 1261 publication: Nano Letters publication_status: published publisher: American Chemical Society publist_id: '5386' quality_controlled: 0 status: public title: Binary Polyethylene Oxide/Titania Solid-State Redox Electrolyte for Highly Efficient Nanocrystalline TiO2 Photoelectrochemical Cells type: journal_article volume: 2 year: '2002' ... --- _id: '1737' abstract: - lang: eng text: A new solvent-free composite polymer electrolyte consisting of high-molecular mass polyethylene oxide (PEO) filled with titanium oxide and containing LiI and I2 was developed. The introduction of the inorganic filler (TiO2 Degussa P25) into the polymer matrix produces dramatic morphological changes to the host polymer structure. Upon addition of the inorganic oxide, the surface roughness increases, with respect to the original polymer and in parallel, the fractal dimension decreases. Both the thermograms and the atomic force microscope (AFM) pictures confirm the amorphicity of the composite electrolyte. The polymer sub-units are held together in a parallel orientation, forming straight long chains of about 500 nm in width, along which TiO2 spherical particles of about 20-25 nm in diameter are distributed. The polymer chains separated by the titania particles are arranged in a three-dimensional, mechanically stable network, that creates free space and voids into which the iodide/triodide anions can easily migrate. All solid-state dye-sensitized solar cells fabricated using this composite electrolyte present high efficiencies (typical maximum incident photon to current efficiency (IPCE) as high as 40% at 520 nm and overall conversion efficiency (η) of 0.96% (Voc = 0.67 V, Jsc = 2.050 mA/cm2, FF = 39%) under direct solar irradiation. Further improvement of the photovoltaic performance is expected by optimization of the electrolyte parameters and of the cell assembly. acknowledgement: Financial support from NCSR “Demokritos” (Dimoerevna 598 project), Empeirikeion Foundation and General Secretariat for Research and Technology of Greece (EPET II, Greece–France and Greece–Czech Republic bilateral collaboration projects) is also greatly acknowledged. G. Katsaros thanks the Greek State Scholarships Foundation (IKY) for fellowship allowance article_processing_charge: No author: - first_name: Georgios full_name: Katsaros, Georgios id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros - first_name: Thomas full_name: Stergiopoulos, Thomas last_name: Stergiopoulos - first_name: Iannis full_name: Arabatzis, Iannis last_name: Arabatzis - first_name: Kyriaki full_name: Papadokostaki, Kyriaki last_name: Papadokostaki - first_name: Polycarpos full_name: Falaras, Polycarpos last_name: Falaras citation: ama: 'Katsaros G, Stergiopoulos T, Arabatzis I, Papadokostaki K, Falaras P. A solvent-free composite polymer/inorganic oxide electrolyte for high efficiency solid-state dye-sensitized solar cells. Journal of Photochemistry and Photobiology A: Chemistry. 2002;149(1-3):191-198. doi:10.1016/S1010-6030(02)00027-8' apa: 'Katsaros, G., Stergiopoulos, T., Arabatzis, I., Papadokostaki, K., & Falaras, P. (2002). A solvent-free composite polymer/inorganic oxide electrolyte for high efficiency solid-state dye-sensitized solar cells. Journal of Photochemistry and Photobiology A: Chemistry. Elsevier. https://doi.org/10.1016/S1010-6030(02)00027-8' chicago: 'Katsaros, Georgios, Thomas Stergiopoulos, Iannis Arabatzis, Kyriaki Papadokostaki, and Polycarpos Falaras. “A Solvent-Free Composite Polymer/Inorganic Oxide Electrolyte for High Efficiency Solid-State Dye-Sensitized Solar Cells.” Journal of Photochemistry and Photobiology A: Chemistry. Elsevier, 2002. https://doi.org/10.1016/S1010-6030(02)00027-8.' ieee: 'G. Katsaros, T. Stergiopoulos, I. Arabatzis, K. Papadokostaki, and P. Falaras, “A solvent-free composite polymer/inorganic oxide electrolyte for high efficiency solid-state dye-sensitized solar cells,” Journal of Photochemistry and Photobiology A: Chemistry, vol. 149, no. 1–3. Elsevier, pp. 191–198, 2002.' ista: 'Katsaros G, Stergiopoulos T, Arabatzis I, Papadokostaki K, Falaras P. 2002. A solvent-free composite polymer/inorganic oxide electrolyte for high efficiency solid-state dye-sensitized solar cells. Journal of Photochemistry and Photobiology A: Chemistry. 149(1–3), 191–198.' mla: 'Katsaros, Georgios, et al. “A Solvent-Free Composite Polymer/Inorganic Oxide Electrolyte for High Efficiency Solid-State Dye-Sensitized Solar Cells.” Journal of Photochemistry and Photobiology A: Chemistry, vol. 149, no. 1–3, Elsevier, 2002, pp. 191–98, doi:10.1016/S1010-6030(02)00027-8.' short: 'G. Katsaros, T. Stergiopoulos, I. Arabatzis, K. Papadokostaki, P. Falaras, Journal of Photochemistry and Photobiology A: Chemistry 149 (2002) 191–198.' date_created: 2018-12-11T11:53:44Z date_published: 2002-06-28T00:00:00Z date_updated: 2023-07-26T08:56:55Z day: '28' doi: 10.1016/S1010-6030(02)00027-8 extern: '1' intvolume: ' 149' issue: 1-3 language: - iso: eng month: '06' oa_version: None page: 191 - 198 publication: 'Journal of Photochemistry and Photobiology A: Chemistry' publication_identifier: issn: - 1010-6030 publication_status: published publisher: Elsevier publist_id: '5387' status: public title: A solvent-free composite polymer/inorganic oxide electrolyte for high efficiency solid-state dye-sensitized solar cells type: journal_article user_id: ea97e931-d5af-11eb-85d4-e6957dddbf17 volume: 149 year: '2002' ... --- _id: '1736' abstract: - lang: eng text: A coding scheme called diode is compared with duobinary signalling and with normal binary transmission. It is shown that the diode coding suppresses the FWM products of a three channel DWDM system and this reduction against that achieved with duobinary coding is presented. The results presented show how the average level of the FWM products relative to the average levels of the three optical carriers vary over the channel spacing range. The suppression observed is about / dB more than that achieved with duobinary modulation and is greater for narrow channel spacing. alternative_title: - LEOS article_processing_charge: No author: - first_name: Georgios full_name: Katsaros, Georgios id: 38DB5788-F248-11E8-B48F-1D18A9856A87 last_name: Katsaros - first_name: Phil full_name: Lane, Phil last_name: Lane - first_name: Michelle full_name: Murphy, Michelle last_name: Murphy citation: ama: 'Katsaros G, Lane P, Murphy M. Comparison of the impact of FWM on binary, duobinary and dicode modulation in DWDM systems. In: Proceedings of the 2000 IEEE Annual Meeting Conference . Vol 1. IEEE; 2000:27-28. doi:10.1109/LEOS.2000.890656' apa: 'Katsaros, G., Lane, P., & Murphy, M. (2000). Comparison of the impact of FWM on binary, duobinary and dicode modulation in DWDM systems. In Proceedings of the 2000 IEEE Annual Meeting Conference (Vol. 1, pp. 27–28). Rio Grande, PR, USA: IEEE. https://doi.org/10.1109/LEOS.2000.890656' chicago: Katsaros, Georgios, Phil Lane, and Michelle Murphy. “Comparison of the Impact of FWM on Binary, Duobinary and Dicode Modulation in DWDM Systems.” In Proceedings of the 2000 IEEE Annual Meeting Conference , 1:27–28. IEEE, 2000. https://doi.org/10.1109/LEOS.2000.890656. ieee: G. Katsaros, P. Lane, and M. Murphy, “Comparison of the impact of FWM on binary, duobinary and dicode modulation in DWDM systems,” in Proceedings of the 2000 IEEE Annual Meeting Conference , Rio Grande, PR, USA, 2000, vol. 1, pp. 27–28. ista: Katsaros G, Lane P, Murphy M. 2000. Comparison of the impact of FWM on binary, duobinary and dicode modulation in DWDM systems. Proceedings of the 2000 IEEE Annual Meeting Conference . Lasers and Electro Optics Society Annual Meeting, LEOS, vol. 1, 27–28. mla: Katsaros, Georgios, et al. “Comparison of the Impact of FWM on Binary, Duobinary and Dicode Modulation in DWDM Systems.” Proceedings of the 2000 IEEE Annual Meeting Conference , vol. 1, IEEE, 2000, pp. 27–28, doi:10.1109/LEOS.2000.890656. short: G. Katsaros, P. Lane, M. Murphy, in:, Proceedings of the 2000 IEEE Annual Meeting Conference , IEEE, 2000, pp. 27–28. conference: end_date: 2000-11-16 location: Rio Grande, PR, USA name: Lasers and Electro Optics Society Annual Meeting start_date: 2000-11-13 date_created: 2018-12-11T11:53:44Z date_published: 2000-01-01T00:00:00Z date_updated: 2023-05-04T14:46:21Z day: '01' doi: 10.1109/LEOS.2000.890656 extern: '1' intvolume: ' 1' language: - iso: eng month: '01' oa_version: None page: 27 - 28 publication: 'Proceedings of the 2000 IEEE Annual Meeting Conference ' publication_identifier: isbn: - 078035947X publication_status: published publisher: IEEE publist_id: '5388' quality_controlled: '1' scopus_import: '1' status: public title: Comparison of the impact of FWM on binary, duobinary and dicode modulation in DWDM systems type: conference user_id: ea97e931-d5af-11eb-85d4-e6957dddbf17 volume: 1 year: '2000' ...