---
_id: '14793'
abstract:
- lang: eng
text: Superconductor/semiconductor hybrid devices have attracted increasing interest
in the past years. Superconducting electronics aims to complement semiconductor
technology, while hybrid architectures are at the forefront of new ideas such
as topological superconductivity and protected qubits. In this work, we engineer
the induced superconductivity in two-dimensional germanium hole gas by varying
the distance between the quantum well and the aluminum. We demonstrate a hard
superconducting gap and realize an electrically and flux tunable superconducting
diode using a superconducting quantum interference device (SQUID). This allows
to tune the current phase relation (CPR), to a regime where single Cooper pair
tunneling is suppressed, creating a sin(2y) CPR. Shapiro experiments complement
this interpretation and the microwave drive allows to create a diode with ≈ 100%
efficiency. The reported results open up the path towards integration of spin
qubit devices, microwave resonators and (protected) superconducting qubits on the
same silicon technology compatible platform.
acknowledged_ssus:
- _id: M-Shop
- _id: NanoFab
acknowledgement: "We acknowledge Alexander Brinkmann, Alessandro Crippa, Francesco
Giazotto, Andrew Higginbotham, Andrea Iorio, Giordano Scappucci, Christian Schonenberger,
and Lukas Splitthoff for helpful discussions. We thank Marcel Verheijen for the
support in the TEM analysis. This research and related results were made possible
with the support of the NOMIS\r\nFoundation. It was supported by the Scientific
Service Units of ISTA through resources provided by the MIBA Machine Shop and the
nanofabrication facility, the European Union’s Horizon 2020 research andinnovation
programme under Grant Agreement No 862046, the HORIZONRIA\r\n101069515 project,
the European Innovation Council Pathfinder grant no. 101115315 (QuKiT), and the
FWF Projects #P-32235, #P-36507 and #F-8606. For the purpose of open access, the
authors have applied a CC BY public copyright licence to any Author Accepted Manuscript
version arising from this submission. R.S.S. acknowledges Spanish CM “Talento Program\"\r\nProject
No. 2022-T1/IND-24070. J.J. acknowledges European Research Council TOCINA 834290."
article_number: '169'
article_processing_charge: Yes
article_type: original
author:
- first_name: Marco
full_name: Valentini, Marco
id: C0BB2FAC-D767-11E9-B658-BC13E6697425
last_name: Valentini
- first_name: Oliver
full_name: Sagi, Oliver
id: 71616374-A8E9-11E9-A7CA-09ECE5697425
last_name: Sagi
- first_name: Levon
full_name: Baghumyan, Levon
id: 7aa1f788-b527-11ee-aa9e-e6111a79e0c7
last_name: Baghumyan
- first_name: Thijs
full_name: de Gijsel, Thijs
id: a0ece13c-b527-11ee-929d-bad130106eee
last_name: de Gijsel
- first_name: Jason
full_name: Jung, Jason
id: 4C9ACE7A-F248-11E8-B48F-1D18A9856A87
last_name: Jung
- first_name: Stefano
full_name: Calcaterra, Stefano
last_name: Calcaterra
- first_name: Andrea
full_name: Ballabio, Andrea
last_name: Ballabio
- first_name: Juan L
full_name: Aguilera Servin, Juan L
id: 2A67C376-F248-11E8-B48F-1D18A9856A87
last_name: Aguilera Servin
orcid: 0000-0002-2862-8372
- first_name: Kushagra
full_name: Aggarwal, Kushagra
id: b22ab905-3539-11eb-84c3-fc159dcd79cb
last_name: Aggarwal
orcid: 0000-0001-9985-9293
- first_name: Marian
full_name: Janik, Marian
id: 396A1950-F248-11E8-B48F-1D18A9856A87
last_name: Janik
- first_name: Thomas
full_name: Adletzberger, Thomas
id: 38756BB2-F248-11E8-B48F-1D18A9856A87
last_name: Adletzberger
- first_name: Rubén
full_name: Seoane Souto, Rubén
last_name: Seoane Souto
- first_name: Martin
full_name: Leijnse, Martin
last_name: Leijnse
- first_name: Jeroen
full_name: Danon, Jeroen
last_name: Danon
- first_name: Constantin
full_name: Schrade, Constantin
last_name: Schrade
- first_name: Erik
full_name: Bakkers, Erik
last_name: Bakkers
- first_name: Daniel
full_name: Chrastina, Daniel
last_name: Chrastina
- first_name: Giovanni
full_name: Isella, Giovanni
last_name: Isella
- first_name: Georgios
full_name: Katsaros, Georgios
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
orcid: 0000-0001-8342-202X
citation:
ama: Valentini M, Sagi O, Baghumyan L, et al. Parity-conserving Cooper-pair transport
and ideal superconducting diode in planar germanium. Nature Communications.
2024;15. doi:10.1038/s41467-023-44114-0
apa: Valentini, M., Sagi, O., Baghumyan, L., de Gijsel, T., Jung, J., Calcaterra,
S., … Katsaros, G. (2024). Parity-conserving Cooper-pair transport and ideal superconducting
diode in planar germanium. Nature Communications. Springer Nature. https://doi.org/10.1038/s41467-023-44114-0
chicago: Valentini, Marco, Oliver Sagi, Levon Baghumyan, Thijs de Gijsel, Jason
Jung, Stefano Calcaterra, Andrea Ballabio, et al. “Parity-Conserving Cooper-Pair
Transport and Ideal Superconducting Diode in Planar Germanium.” Nature Communications.
Springer Nature, 2024. https://doi.org/10.1038/s41467-023-44114-0.
ieee: M. Valentini et al., “Parity-conserving Cooper-pair transport and ideal
superconducting diode in planar germanium,” Nature Communications, vol.
15. Springer Nature, 2024.
ista: Valentini M, Sagi O, Baghumyan L, de Gijsel T, Jung J, Calcaterra S, Ballabio
A, Aguilera Servin JL, Aggarwal K, Janik M, Adletzberger T, Seoane Souto R, Leijnse
M, Danon J, Schrade C, Bakkers E, Chrastina D, Isella G, Katsaros G. 2024. Parity-conserving
Cooper-pair transport and ideal superconducting diode in planar germanium. Nature
Communications. 15, 169.
mla: Valentini, Marco, et al. “Parity-Conserving Cooper-Pair Transport and Ideal
Superconducting Diode in Planar Germanium.” Nature Communications, vol.
15, 169, Springer Nature, 2024, doi:10.1038/s41467-023-44114-0.
short: M. Valentini, O. Sagi, L. Baghumyan, T. de Gijsel, J. Jung, S. Calcaterra,
A. Ballabio, J.L. Aguilera Servin, K. Aggarwal, M. Janik, T. Adletzberger, R.
Seoane Souto, M. Leijnse, J. Danon, C. Schrade, E. Bakkers, D. Chrastina, G. Isella,
G. Katsaros, Nature Communications 15 (2024).
date_created: 2024-01-14T23:00:56Z
date_published: 2024-01-02T00:00:00Z
date_updated: 2024-01-17T11:07:55Z
day: '02'
ddc:
- '530'
department:
- _id: GeKa
doi: 10.1038/s41467-023-44114-0
ec_funded: 1
external_id:
pmid:
- '38167818'
file:
- access_level: open_access
checksum: ef79173b45eeaf984ffa61ef2f8a52ab
content_type: application/pdf
creator: dernst
date_created: 2024-01-17T11:03:00Z
date_updated: 2024-01-17T11:03:00Z
file_id: '14825'
file_name: 2024_NatureComm_Valentini.pdf
file_size: 2336595
relation: main_file
success: 1
file_date_updated: 2024-01-17T11:03:00Z
has_accepted_license: '1'
intvolume: ' 15'
language:
- iso: eng
month: '01'
oa: 1
oa_version: Published Version
pmid: 1
project:
- _id: 237E5020-32DE-11EA-91FC-C7463DDC885E
call_identifier: H2020
grant_number: '862046'
name: TOPOLOGICALLY PROTECTED AND SCALABLE QUANTUM BITS
- _id: 34c0acea-11ca-11ed-8bc3-8775e10fd452
grant_number: '101069515'
name: Integrated GermaNIum quanTum tEchnology
- _id: bdc2ca30-d553-11ed-ba76-cf164a5bb811
grant_number: '101115315'
name: Quantum bits with Kitaev Transmons
- _id: 237B3DA4-32DE-11EA-91FC-C7463DDC885E
call_identifier: FWF
grant_number: P32235
name: Towards scalable hut wire quantum devices
- _id: bd8bd29e-d553-11ed-ba76-f0070d4b237a
grant_number: P36507
name: Merging spin and superconducting qubits in planar Ge
- _id: 34a66131-11ca-11ed-8bc3-a31681c6b03e
grant_number: F8606
name: Conventional and unconventional topological superconductors
publication: Nature Communications
publication_identifier:
eissn:
- 2041-1723
publication_status: published
publisher: Springer Nature
quality_controlled: '1'
scopus_import: '1'
status: public
title: Parity-conserving Cooper-pair transport and ideal superconducting diode in
planar germanium
tmp:
image: /images/cc_by.png
legal_code_url: https://creativecommons.org/licenses/by/4.0/legalcode
name: Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)
short: CC BY (4.0)
type: journal_article
user_id: 2DF688A6-F248-11E8-B48F-1D18A9856A87
volume: 15
year: '2024'
...
---
_id: '15018'
abstract:
- lang: eng
text: The epitaxial growth of a strained Ge layer, which is a promising candidate
for the channel material of a hole spin qubit, has been demonstrated on 300 mm
Si wafers using commercially available Si0.3Ge0.7 strain relaxed buffer (SRB)
layers. The assessment of the layer and the interface qualities for a buried strained
Ge layer embedded in Si0.3Ge0.7 layers is reported. The XRD reciprocal space mapping
confirmed that the reduction of the growth temperature enables the 2-dimensional
growth of the Ge layer fully strained with respect to the Si0.3Ge0.7. Nevertheless,
dislocations at the top and/or bottom interface of the Ge layer were observed
by means of electron channeling contrast imaging, suggesting the importance of
the careful dislocation assessment. The interface abruptness does not depend on
the selection of the precursor gases, but it is strongly influenced by the growth
temperature which affects the coverage of the surface H-passivation. The mobility
of 2.7 × 105 cm2/Vs is promising, while the low percolation density of 3 × 1010
/cm2 measured with a Hall-bar device at 7 K illustrates the high quality of the
heterostructure thanks to the high Si0.3Ge0.7 SRB quality.
acknowledgement: The Ge project received funding from the European Union's Horizon
Europe programme under the Grant Agreement 101069515 – IGNITE. Siltronic AG is acknowledged
for providing the SRB wafers. This work was supported by Imec's Industrial Affiliation
Program on Quantum Computing.
article_number: '108231'
article_processing_charge: No
article_type: original
author:
- first_name: Yosuke
full_name: Shimura, Yosuke
last_name: Shimura
- first_name: Clement
full_name: Godfrin, Clement
last_name: Godfrin
- first_name: Andriy
full_name: Hikavyy, Andriy
last_name: Hikavyy
- first_name: Roy
full_name: Li, Roy
last_name: Li
- first_name: Juan L
full_name: Aguilera Servin, Juan L
id: 2A67C376-F248-11E8-B48F-1D18A9856A87
last_name: Aguilera Servin
orcid: 0000-0002-2862-8372
- first_name: Georgios
full_name: Katsaros, Georgios
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
orcid: 0000-0001-8342-202X
- first_name: Paola
full_name: Favia, Paola
last_name: Favia
- first_name: Han
full_name: Han, Han
last_name: Han
- first_name: Danny
full_name: Wan, Danny
last_name: Wan
- first_name: Kristiaan
full_name: de Greve, Kristiaan
last_name: de Greve
- first_name: Roger
full_name: Loo, Roger
last_name: Loo
citation:
ama: Shimura Y, Godfrin C, Hikavyy A, et al. Compressively strained epitaxial Ge
layers for quantum computing applications. Materials Science in Semiconductor
Processing. 2024;174(5). doi:10.1016/j.mssp.2024.108231
apa: Shimura, Y., Godfrin, C., Hikavyy, A., Li, R., Aguilera Servin, J. L., Katsaros,
G., … Loo, R. (2024). Compressively strained epitaxial Ge layers for quantum computing
applications. Materials Science in Semiconductor Processing. Elsevier.
https://doi.org/10.1016/j.mssp.2024.108231
chicago: Shimura, Yosuke, Clement Godfrin, Andriy Hikavyy, Roy Li, Juan L Aguilera
Servin, Georgios Katsaros, Paola Favia, et al. “Compressively Strained Epitaxial
Ge Layers for Quantum Computing Applications.” Materials Science in Semiconductor
Processing. Elsevier, 2024. https://doi.org/10.1016/j.mssp.2024.108231.
ieee: Y. Shimura et al., “Compressively strained epitaxial Ge layers for
quantum computing applications,” Materials Science in Semiconductor Processing,
vol. 174, no. 5. Elsevier, 2024.
ista: Shimura Y, Godfrin C, Hikavyy A, Li R, Aguilera Servin JL, Katsaros G, Favia
P, Han H, Wan D, de Greve K, Loo R. 2024. Compressively strained epitaxial Ge
layers for quantum computing applications. Materials Science in Semiconductor
Processing. 174(5), 108231.
mla: Shimura, Yosuke, et al. “Compressively Strained Epitaxial Ge Layers for Quantum
Computing Applications.” Materials Science in Semiconductor Processing,
vol. 174, no. 5, 108231, Elsevier, 2024, doi:10.1016/j.mssp.2024.108231.
short: Y. Shimura, C. Godfrin, A. Hikavyy, R. Li, J.L. Aguilera Servin, G. Katsaros,
P. Favia, H. Han, D. Wan, K. de Greve, R. Loo, Materials Science in Semiconductor
Processing 174 (2024).
date_created: 2024-02-22T14:10:40Z
date_published: 2024-02-20T00:00:00Z
date_updated: 2024-02-26T10:36:35Z
day: '20'
ddc:
- '530'
department:
- _id: GeKa
- _id: NanoFab
doi: 10.1016/j.mssp.2024.108231
has_accepted_license: '1'
intvolume: ' 174'
issue: '5'
keyword:
- Mechanical Engineering
- Mechanics of Materials
- Condensed Matter Physics
- General Materials Science
language:
- iso: eng
main_file_link:
- open_access: '1'
url: https://doi.org/10.1016/j.mssp.2024.108231
month: '02'
oa: 1
oa_version: Published Version
project:
- _id: 34c0acea-11ca-11ed-8bc3-8775e10fd452
grant_number: '101069515'
name: Integrated GermaNIum quanTum tEchnology
publication: Materials Science in Semiconductor Processing
publication_identifier:
issn:
- 1369-8001
publication_status: epub_ahead
publisher: Elsevier
quality_controlled: '1'
status: public
title: Compressively strained epitaxial Ge layers for quantum computing applications
tmp:
image: /images/cc_by.png
legal_code_url: https://creativecommons.org/licenses/by/4.0/legalcode
name: Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)
short: CC BY (4.0)
type: journal_article
user_id: 2DF688A6-F248-11E8-B48F-1D18A9856A87
volume: 174
year: '2024'
...
---
_id: '13312'
abstract:
- lang: eng
text: "Superconductor/semiconductor hybrid devices have attracted increasing\r\ninterest
in the past years. Superconducting electronics aims to complement\r\nsemiconductor
technology, while hybrid architectures are at the forefront of\r\nnew ideas such
as topological superconductivity and protected qubits. In this\r\nwork, we engineer
the induced superconductivity in two-dimensional germanium\r\nhole gas by varying
the distance between the quantum well and the aluminum. We\r\ndemonstrate a hard
superconducting gap and realize an electrically and flux\r\ntunable superconducting
diode using a superconducting quantum interference\r\ndevice (SQUID). This allows
to tune the current phase relation (CPR), to a\r\nregime where single Cooper pair
tunneling is suppressed, creating a $ \\sin\r\n\\left( 2 \\varphi \\right)$ CPR.
Shapiro experiments complement this\r\ninterpretation and the microwave drive
allows to create a diode with $ \\approx\r\n100 \\%$ efficiency. The reported
results open up the path towards monolithic\r\nintegration of spin qubit devices,
microwave resonators and (protected)\r\nsuperconducting qubits on a silicon technology
compatible platform."
acknowledged_ssus:
- _id: M-Shop
- _id: NanoFab
acknowledgement: "The authors acknowledge Alexander Brinkmann, Alessandro Crippa,
Andrew Higginbotham, Andrea Iorio, Giordano\r\nScappucci and Christian Schonenberger
for helpful discussions. We thank Marcel Verheijen for the support in the\r\nTEM
analysis. This research and related results were made\r\npossible with the support
of the NOMIS Foundation. It was\r\nsupported by the Scientific Service Units of
ISTA through resources provided by the MIBA Machine Shop and the\r\nnanofabrication
facility, the European Union’s Horizon 2020\r\nresearch and innovation programme
under Grant Agreement\r\nNo 862046, the HORIZON-RIA 101069515 project and the\r\nFWF
Projects #P-32235, #P-36507 and #F-8606. R.S.S.\r\nacknowledges Spanish CM “Talento
Program” Project No.\r\n2022-T1/IND-24070."
article_number: '2306.07109'
article_processing_charge: No
author:
- first_name: Marco
full_name: Valentini, Marco
id: C0BB2FAC-D767-11E9-B658-BC13E6697425
last_name: Valentini
- first_name: Oliver
full_name: Sagi, Oliver
id: 71616374-A8E9-11E9-A7CA-09ECE5697425
last_name: Sagi
- first_name: Levon
full_name: Baghumyan, Levon
last_name: Baghumyan
- first_name: Thijs de
full_name: Gijsel, Thijs de
last_name: Gijsel
- first_name: Jason
full_name: Jung, Jason
id: 4C9ACE7A-F248-11E8-B48F-1D18A9856A87
last_name: Jung
- first_name: Stefano
full_name: Calcaterra, Stefano
last_name: Calcaterra
- first_name: Andrea
full_name: Ballabio, Andrea
last_name: Ballabio
- first_name: Juan Aguilera
full_name: Servin, Juan Aguilera
last_name: Servin
- first_name: Kushagra
full_name: Aggarwal, Kushagra
id: b22ab905-3539-11eb-84c3-fc159dcd79cb
last_name: Aggarwal
orcid: 0000-0001-9985-9293
- first_name: Marian
full_name: Janik, Marian
id: 396A1950-F248-11E8-B48F-1D18A9856A87
last_name: Janik
- first_name: Thomas
full_name: Adletzberger, Thomas
id: 38756BB2-F248-11E8-B48F-1D18A9856A87
last_name: Adletzberger
- first_name: Rubén Seoane
full_name: Souto, Rubén Seoane
last_name: Souto
- first_name: Martin
full_name: Leijnse, Martin
last_name: Leijnse
- first_name: Jeroen
full_name: Danon, Jeroen
last_name: Danon
- first_name: Constantin
full_name: Schrade, Constantin
last_name: Schrade
- first_name: Erik
full_name: Bakkers, Erik
last_name: Bakkers
- first_name: Daniel
full_name: Chrastina, Daniel
last_name: Chrastina
- first_name: Giovanni
full_name: Isella, Giovanni
last_name: Isella
- first_name: Georgios
full_name: Katsaros, Georgios
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
orcid: 0000-0001-8342-202X
citation:
ama: Valentini M, Sagi O, Baghumyan L, et al. Radio frequency driven superconducting
diode and parity conserving Cooper pair transport in a two-dimensional germanium
hole gas. arXiv. doi:10.48550/arXiv.2306.07109
apa: Valentini, M., Sagi, O., Baghumyan, L., Gijsel, T. de, Jung, J., Calcaterra,
S., … Katsaros, G. (n.d.). Radio frequency driven superconducting diode and parity
conserving Cooper pair transport in a two-dimensional germanium hole gas. arXiv.
https://doi.org/10.48550/arXiv.2306.07109
chicago: Valentini, Marco, Oliver Sagi, Levon Baghumyan, Thijs de Gijsel, Jason
Jung, Stefano Calcaterra, Andrea Ballabio, et al. “Radio Frequency Driven Superconducting
Diode and Parity Conserving Cooper Pair Transport in a Two-Dimensional Germanium
Hole Gas.” ArXiv, n.d. https://doi.org/10.48550/arXiv.2306.07109.
ieee: M. Valentini et al., “Radio frequency driven superconducting diode
and parity conserving Cooper pair transport in a two-dimensional germanium hole
gas,” arXiv. .
ista: Valentini M, Sagi O, Baghumyan L, Gijsel T de, Jung J, Calcaterra S, Ballabio
A, Servin JA, Aggarwal K, Janik M, Adletzberger T, Souto RS, Leijnse M, Danon
J, Schrade C, Bakkers E, Chrastina D, Isella G, Katsaros G. Radio frequency driven
superconducting diode and parity conserving Cooper pair transport in a two-dimensional
germanium hole gas. arXiv, 2306.07109.
mla: Valentini, Marco, et al. “Radio Frequency Driven Superconducting Diode and
Parity Conserving Cooper Pair Transport in a Two-Dimensional Germanium Hole Gas.”
ArXiv, 2306.07109, doi:10.48550/arXiv.2306.07109.
short: M. Valentini, O. Sagi, L. Baghumyan, T. de Gijsel, J. Jung, S. Calcaterra,
A. Ballabio, J.A. Servin, K. Aggarwal, M. Janik, T. Adletzberger, R.S. Souto,
M. Leijnse, J. Danon, C. Schrade, E. Bakkers, D. Chrastina, G. Isella, G. Katsaros,
ArXiv (n.d.).
date_created: 2023-07-26T11:17:20Z
date_published: 2023-06-13T00:00:00Z
date_updated: 2024-02-07T07:52:32Z
day: '13'
ddc:
- '530'
department:
- _id: GeKa
- _id: M-Shop
doi: 10.48550/arXiv.2306.07109
ec_funded: 1
external_id:
arxiv:
- '2306.07109'
keyword:
- Mesoscale and Nanoscale Physics
language:
- iso: eng
main_file_link:
- open_access: '1'
url: https://doi.org/10.48550/arXiv.2306.07109
month: '06'
oa: 1
oa_version: Preprint
project:
- _id: 237E5020-32DE-11EA-91FC-C7463DDC885E
call_identifier: H2020
grant_number: '862046'
name: TOPOLOGICALLY PROTECTED AND SCALABLE QUANTUM BITS
- _id: 237B3DA4-32DE-11EA-91FC-C7463DDC885E
call_identifier: FWF
grant_number: P32235
name: Towards scalable hut wire quantum devices
- _id: bd8bd29e-d553-11ed-ba76-f0070d4b237a
grant_number: P36507
name: Merging spin and superconducting qubits in planar Ge
- _id: 34a66131-11ca-11ed-8bc3-a31681c6b03e
grant_number: F8606
name: Conventional and unconventional topological superconductors
- _id: bd5b4ec5-d553-11ed-ba76-a6eedb083344
name: Protected states of quantum matter
publication: arXiv
publication_status: submitted
related_material:
record:
- id: '13286'
relation: dissertation_contains
status: public
status: public
title: Radio frequency driven superconducting diode and parity conserving Cooper
pair transport in a two-dimensional germanium hole gas
tmp:
image: /images/cc_by.png
legal_code_url: https://creativecommons.org/licenses/by/4.0/legalcode
name: Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)
short: CC BY (4.0)
type: preprint
user_id: 8b945eb4-e2f2-11eb-945a-df72226e66a9
year: '2023'
...
---
_id: '10920'
abstract:
- lang: eng
text: The spin-orbit interaction permits to control the state of a spin qubit via
electric fields. For holes it is particularly strong, allowing for fast all electrical
qubit manipulation, and yet an in-depth understanding of this interaction in hole
systems is missing. Here we investigate, experimentally and theoretically, the
effect of the cubic Rashba spin-orbit interaction on the mixing of the spin states
by studying singlet-triplet oscillations in a planar Ge hole double quantum dot.
Landau-Zener sweeps at different magnetic field directions allow us to disentangle
the effects of the spin-orbit induced spin-flip term from those caused by strongly
site-dependent and anisotropic quantum dot g tensors. Our work, therefore, provides
new insights into the hole spin-orbit interaction, necessary for optimizing future
qubit experiments.
acknowledged_ssus:
- _id: M-Shop
- _id: NanoFab
acknowledgement: "This research was supported by the Scientific Service Units of ISTA
through resources provided by the MIBA Machine Shop and the nanofabrication facility.
This project has received funding from the European Union’s Horizon 2020 research
and innovation program under the Marie\r\nSkłodowska-Curie Grant Agreement No. 844511,
No. 75441, and by the FWF-P 30207, I05060, and M3032-N projects. A. B. acknowledges
support from the EU Horizon-2020 FET project microSPIRE, ID: 766955. P.M. M. and
G. B. acknowledge funding by the Deutsche Forschungsgemeinschaft (DFG—German Research
Foundation) under Project No. 450396347. This work was supported by the Royal Society
(URF\\R1\\191150) and the European Research Council (Grant Agreement No. 948932),
N. A. acknowledges the use of the University of Oxford Advanced Research Computing
(ARC) facility."
article_number: '126803'
article_processing_charge: No
article_type: original
author:
- first_name: Daniel
full_name: Jirovec, Daniel
id: 4C473F58-F248-11E8-B48F-1D18A9856A87
last_name: Jirovec
orcid: 0000-0002-7197-4801
- first_name: Philipp M.
full_name: Mutter, Philipp M.
last_name: Mutter
- first_name: Andrea C
full_name: Hofmann, Andrea C
id: 340F461A-F248-11E8-B48F-1D18A9856A87
last_name: Hofmann
- first_name: Alessandro
full_name: Crippa, Alessandro
id: 1F2B21A2-F6E7-11E9-9B82-F7DBE5697425
last_name: Crippa
orcid: 0000-0002-2968-611X
- first_name: Marek
full_name: Rychetsky, Marek
last_name: Rychetsky
- first_name: David L.
full_name: Craig, David L.
last_name: Craig
- first_name: Josip
full_name: Kukucka, Josip
id: 3F5D8856-F248-11E8-B48F-1D18A9856A87
last_name: Kukucka
- first_name: Frederico
full_name: Martins, Frederico
id: 38F80F9A-1CB8-11EA-BC76-B49B3DDC885E
last_name: Martins
orcid: 0000-0003-2668-2401
- first_name: Andrea
full_name: Ballabio, Andrea
last_name: Ballabio
- first_name: Natalia
full_name: Ares, Natalia
last_name: Ares
- first_name: Daniel
full_name: Chrastina, Daniel
last_name: Chrastina
- first_name: Giovanni
full_name: Isella, Giovanni
last_name: Isella
- first_name: 'Guido '
full_name: 'Burkard, Guido '
last_name: Burkard
- first_name: Georgios
full_name: Katsaros, Georgios
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
citation:
ama: Jirovec D, Mutter PM, Hofmann AC, et al. Dynamics of hole singlet-triplet qubits
with large g-factor differences. Physical Review Letters. 2022;128(12).
doi:10.1103/PhysRevLett.128.126803
apa: Jirovec, D., Mutter, P. M., Hofmann, A. C., Crippa, A., Rychetsky, M., Craig,
D. L., … Katsaros, G. (2022). Dynamics of hole singlet-triplet qubits with large
g-factor differences. Physical Review Letters. American Physical Society.
https://doi.org/10.1103/PhysRevLett.128.126803
chicago: Jirovec, Daniel, Philipp M. Mutter, Andrea C Hofmann, Alessandro Crippa,
Marek Rychetsky, David L. Craig, Josip Kukucka, et al. “Dynamics of Hole Singlet-Triplet
Qubits with Large g-Factor Differences.” Physical Review Letters. American
Physical Society, 2022. https://doi.org/10.1103/PhysRevLett.128.126803.
ieee: D. Jirovec et al., “Dynamics of hole singlet-triplet qubits with large
g-factor differences,” Physical Review Letters, vol. 128, no. 12. American
Physical Society, 2022.
ista: Jirovec D, Mutter PM, Hofmann AC, Crippa A, Rychetsky M, Craig DL, Kukucka
J, Martins F, Ballabio A, Ares N, Chrastina D, Isella G, Burkard G, Katsaros G.
2022. Dynamics of hole singlet-triplet qubits with large g-factor differences.
Physical Review Letters. 128(12), 126803.
mla: Jirovec, Daniel, et al. “Dynamics of Hole Singlet-Triplet Qubits with Large
g-Factor Differences.” Physical Review Letters, vol. 128, no. 12, 126803,
American Physical Society, 2022, doi:10.1103/PhysRevLett.128.126803.
short: D. Jirovec, P.M. Mutter, A.C. Hofmann, A. Crippa, M. Rychetsky, D.L. Craig,
J. Kukucka, F. Martins, A. Ballabio, N. Ares, D. Chrastina, G. Isella, G. Burkard,
G. Katsaros, Physical Review Letters 128 (2022).
date_created: 2022-03-24T15:51:11Z
date_published: 2022-03-24T00:00:00Z
date_updated: 2023-08-03T06:14:58Z
day: '24'
ddc:
- '530'
department:
- _id: GradSch
- _id: GeKa
doi: 10.1103/PhysRevLett.128.126803
ec_funded: 1
external_id:
arxiv:
- '2111.05130'
isi:
- '000786542500004'
file:
- access_level: open_access
checksum: 6e66ad548d18db9c131f304acbd5a1f4
content_type: application/pdf
creator: dernst
date_created: 2022-03-28T06:53:39Z
date_updated: 2022-03-28T06:53:39Z
file_id: '10928'
file_name: 2022_PhysRevLetters_Jirovec.pdf
file_size: 1266515
relation: main_file
success: 1
file_date_updated: 2022-03-28T06:53:39Z
has_accepted_license: '1'
intvolume: ' 128'
isi: 1
issue: '12'
language:
- iso: eng
month: '03'
oa: 1
oa_version: Published Version
project:
- _id: 26A151DA-B435-11E9-9278-68D0E5697425
call_identifier: H2020
grant_number: '844511'
name: Majorana bound states in Ge/SiGe heterostructures
- _id: 260C2330-B435-11E9-9278-68D0E5697425
call_identifier: H2020
grant_number: '754411'
name: ISTplus - Postdoctoral Fellowships
- _id: 2641CE5E-B435-11E9-9278-68D0E5697425
call_identifier: FWF
grant_number: P30207
name: Hole spin orbit qubits in Ge quantum wells
- _id: c0977eea-5a5b-11eb-8a69-a862db0cf4d1
grant_number: I05060
name: High impedance circuit quantum electrodynamics with hole spins
- _id: c08c05c4-5a5b-11eb-8a69-dc6ce49d7973
grant_number: M03032
name: Long-range spin exchange for 2D qubits architectures
publication: Physical Review Letters
publication_identifier:
eissn:
- 1079-7114
publication_status: published
publisher: American Physical Society
quality_controlled: '1'
status: public
title: Dynamics of hole singlet-triplet qubits with large g-factor differences
tmp:
image: /images/cc_by.png
legal_code_url: https://creativecommons.org/licenses/by/4.0/legalcode
name: Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)
short: CC BY (4.0)
type: journal_article
user_id: 4359f0d1-fa6c-11eb-b949-802e58b17ae8
volume: 128
year: '2022'
...
---
_id: '12118'
abstract:
- lang: eng
text: Hybrid semiconductor–superconductor devices hold great promise for realizing
topological quantum computing with Majorana zero modes1,2,3,4,5. However, multiple
claims of Majorana detection, based on either tunnelling6,7,8,9,10 or Coulomb
blockade (CB) spectroscopy11,12, remain disputed. Here we devise an experimental
protocol that allows us to perform both types of measurement on the same hybrid
island by adjusting its charging energy via tunable junctions to the normal leads.
This method reduces ambiguities of Majorana detections by checking the consistency
between CB spectroscopy and zero-bias peaks in non-blockaded transport. Specifically,
we observe junction-dependent, even–odd modulated, single-electron CB peaks in
InAs/Al hybrid nanowires without concomitant low-bias peaks in tunnelling spectroscopy.
We provide a theoretical interpretation of the experimental observations in terms
of low-energy, longitudinally confined island states rather than overlapping Majorana
modes. Our results highlight the importance of combined measurements on the same
device for the identification of topological Majorana zero modes.
acknowledged_ssus:
- _id: M-Shop
- _id: NanoFab
acknowledgement: We thank P. Krogstrup for providing us with the NW materials. We
thank A. Higginbotham, E. J. H. Lee, C. Marcus and S. Vaitiekėnas for helpful discussions
and G. Steffensen for his input on the diffusive Little-Parks theory. This research
was supported by the Scientific Service Units of ISTA through resources provided
by the MIBA Machine Shop and the nanofabrication facility; the NOMIS Foundation;
the CSIC Interdisciplinary Thematic Platform (PTI+) on Quantum Technologies (PTI-QTEP+).
A.H. acknowledges support from H2020-MSCA-IF-2018/844511. ICN2 also acknowledges
funding from Generalitat de Catalunya 2017 SGR 327. ICN2 is supported by the Severo
Ochoa Program from Spanish MINECO (Grant no. SEV-2017-0706) and is funded by the
CERCA Programme/Generalitat de Catalunya. Part of the present work has been performed
in the framework of Universitat Autònoma de Barcelona Materials Science PhD programme.
Authors acknowledge the use of instrumentation as well as the technical advice provided
by the National Facility ELECMI ICTS, node ‘Laboratorio de Microscopías Avanzadas’
at University of Zaragoza. This project has received funding from the European Union’s
Horizon 2020 research and innovation programme under grant agreement no. 823717-ESTEEM3.
This study was supported by MCIN with funding from European Union NextGenerationEU
(PRTR-C17.I1) and Generalitat de Catalunya. This research is part of the CSIC programme
for the Spanish Recovery, Transformation and Resilience Plan funded by the Recovery
and Resilience Facility of the European Union, established by the Regulation (EU)
2020/2094. We thank support from Grant PGC2018-097018-BI00, project FlagERA TOPOGRAPH
(PCI2018-093026) and project NANOGEN (PID2020-116093RB-C43), funded by MCIN/AEI/10.13039/501100011033/
and by ‘ERDF A way of making Europe’, by the European Union. M. Botifoll acknowledges
support from SUR Generalitat de Catalunya and the EU Social Fund (project ref. 2020
FI 00103).
article_processing_charge: No
article_type: original
author:
- first_name: Marco
full_name: Valentini, Marco
id: C0BB2FAC-D767-11E9-B658-BC13E6697425
last_name: Valentini
- first_name: Maksim
full_name: Borovkov, Maksim
id: 2ac7a0a2-3562-11eb-9256-fbd18ea55087
last_name: Borovkov
- first_name: Elsa
full_name: Prada, Elsa
last_name: Prada
- first_name: Sara
full_name: Martí-Sánchez, Sara
last_name: Martí-Sánchez
- first_name: Marc
full_name: Botifoll, Marc
last_name: Botifoll
- first_name: Andrea C
full_name: Hofmann, Andrea C
id: 340F461A-F248-11E8-B48F-1D18A9856A87
last_name: Hofmann
- first_name: Jordi
full_name: Arbiol, Jordi
last_name: Arbiol
- first_name: Ramón
full_name: Aguado, Ramón
last_name: Aguado
- first_name: Pablo
full_name: San-Jose, Pablo
last_name: San-Jose
- first_name: Georgios
full_name: Katsaros, Georgios
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
orcid: 0000-0001-8342-202X
citation:
ama: Valentini M, Borovkov M, Prada E, et al. Majorana-like Coulomb spectroscopy
in the absence of zero-bias peaks. Nature. 2022;612(7940):442-447. doi:10.1038/s41586-022-05382-w
apa: Valentini, M., Borovkov, M., Prada, E., Martí-Sánchez, S., Botifoll, M., Hofmann,
A. C., … Katsaros, G. (2022). Majorana-like Coulomb spectroscopy in the absence
of zero-bias peaks. Nature. Springer Nature. https://doi.org/10.1038/s41586-022-05382-w
chicago: Valentini, Marco, Maksim Borovkov, Elsa Prada, Sara Martí-Sánchez, Marc
Botifoll, Andrea C Hofmann, Jordi Arbiol, Ramón Aguado, Pablo San-Jose, and Georgios
Katsaros. “Majorana-like Coulomb Spectroscopy in the Absence of Zero-Bias Peaks.”
Nature. Springer Nature, 2022. https://doi.org/10.1038/s41586-022-05382-w.
ieee: M. Valentini et al., “Majorana-like Coulomb spectroscopy in the absence
of zero-bias peaks,” Nature, vol. 612, no. 7940. Springer Nature, pp. 442–447,
2022.
ista: Valentini M, Borovkov M, Prada E, Martí-Sánchez S, Botifoll M, Hofmann AC,
Arbiol J, Aguado R, San-Jose P, Katsaros G. 2022. Majorana-like Coulomb spectroscopy
in the absence of zero-bias peaks. Nature. 612(7940), 442–447.
mla: Valentini, Marco, et al. “Majorana-like Coulomb Spectroscopy in the Absence
of Zero-Bias Peaks.” Nature, vol. 612, no. 7940, Springer Nature, 2022,
pp. 442–47, doi:10.1038/s41586-022-05382-w.
short: M. Valentini, M. Borovkov, E. Prada, S. Martí-Sánchez, M. Botifoll, A.C.
Hofmann, J. Arbiol, R. Aguado, P. San-Jose, G. Katsaros, Nature 612 (2022) 442–447.
date_created: 2023-01-12T11:56:45Z
date_published: 2022-12-15T00:00:00Z
date_updated: 2024-02-21T12:35:33Z
day: '15'
department:
- _id: GeKa
doi: 10.1038/s41586-022-05382-w
ec_funded: 1
external_id:
arxiv:
- '2203.07829'
isi:
- '000899725400001'
intvolume: ' 612'
isi: 1
issue: '7940'
keyword:
- Multidisciplinary
language:
- iso: eng
main_file_link:
- open_access: '1'
url: ' https://doi.org/10.48550/arXiv.2203.07829'
month: '12'
oa: 1
oa_version: Preprint
page: 442-447
project:
- _id: 26A151DA-B435-11E9-9278-68D0E5697425
call_identifier: H2020
grant_number: '844511'
name: Majorana bound states in Ge/SiGe heterostructures
publication: Nature
publication_identifier:
eissn:
- 1476-4687
issn:
- 0028-0836
publication_status: published
publisher: Springer Nature
quality_controlled: '1'
related_material:
link:
- description: News on ISTA Website
relation: press_release
url: https://ista.ac.at/en/news/imposter-particles-revealed-and-explained/
record:
- id: '13286'
relation: dissertation_contains
status: public
- id: '12522'
relation: research_data
status: public
scopus_import: '1'
status: public
title: Majorana-like Coulomb spectroscopy in the absence of zero-bias peaks
type: journal_article
user_id: 4359f0d1-fa6c-11eb-b949-802e58b17ae8
volume: 612
year: '2022'
...
---
_id: '9464'
abstract:
- lang: eng
text: We firstly introduce the self-assembled growth of highly uniform Ge quantum
wires with controllable position, distance and length on patterned Si (001) substrates.
We then present the electrically tunable strong spin-orbit coupling, the first
Ge hole spin qubit and ultrafast operation of hole spin qubit in the Ge/Si quantum
wires.
acknowledgement: This work was supported by the National Key R&D Program of China
(Grant No. 2016YFA0301700) and the ERC Starting Grant no. 335497.
article_number: '9420817'
article_processing_charge: No
author:
- first_name: Fei
full_name: Gao, Fei
last_name: Gao
- first_name: Jie Yin
full_name: Zhang, Jie Yin
last_name: Zhang
- first_name: Jian Huan
full_name: Wang, Jian Huan
last_name: Wang
- first_name: Ming
full_name: Ming, Ming
last_name: Ming
- first_name: Tina
full_name: Wang, Tina
last_name: Wang
- first_name: Jian Jun
full_name: Zhang, Jian Jun
last_name: Zhang
- first_name: Hannes
full_name: Watzinger, Hannes
id: 35DF8E50-F248-11E8-B48F-1D18A9856A87
last_name: Watzinger
- first_name: Josip
full_name: Kukucka, Josip
id: 3F5D8856-F248-11E8-B48F-1D18A9856A87
last_name: Kukucka
- first_name: Lada
full_name: Vukušić, Lada
id: 31E9F056-F248-11E8-B48F-1D18A9856A87
last_name: Vukušić
orcid: 0000-0003-2424-8636
- first_name: Georgios
full_name: Katsaros, Georgios
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
orcid: 0000-0001-8342-202X
- first_name: Ke
full_name: Wang, Ke
last_name: Wang
- first_name: Gang
full_name: Xu, Gang
last_name: Xu
- first_name: Hai Ou
full_name: Li, Hai Ou
last_name: Li
- first_name: Guo Ping
full_name: Guo, Guo Ping
last_name: Guo
citation:
ama: 'Gao F, Zhang JY, Wang JH, et al. Ge/Si quantum wires for quantum computing.
In: 2021 5th IEEE Electron Devices Technology and Manufacturing Conference,
EDTM 2021. IEEE; 2021. doi:10.1109/EDTM50988.2021.9420817'
apa: 'Gao, F., Zhang, J. Y., Wang, J. H., Ming, M., Wang, T., Zhang, J. J., … Guo,
G. P. (2021). Ge/Si quantum wires for quantum computing. In 2021 5th IEEE Electron
Devices Technology and Manufacturing Conference, EDTM 2021. Virtual, Online:
IEEE. https://doi.org/10.1109/EDTM50988.2021.9420817'
chicago: Gao, Fei, Jie Yin Zhang, Jian Huan Wang, Ming Ming, Tina Wang, Jian Jun
Zhang, Hannes Watzinger, et al. “Ge/Si Quantum Wires for Quantum Computing.” In
2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM
2021. IEEE, 2021. https://doi.org/10.1109/EDTM50988.2021.9420817.
ieee: F. Gao et al., “Ge/Si quantum wires for quantum computing,” in 2021
5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021,
Virtual, Online, 2021.
ista: 'Gao F, Zhang JY, Wang JH, Ming M, Wang T, Zhang JJ, Watzinger H, Kukucka
J, Vukušić L, Katsaros G, Wang K, Xu G, Li HO, Guo GP. 2021. Ge/Si quantum wires
for quantum computing. 2021 5th IEEE Electron Devices Technology and Manufacturing
Conference, EDTM 2021. EDTM: IEEE Electron Devices Technology and Manufacturing
Conference, 9420817.'
mla: Gao, Fei, et al. “Ge/Si Quantum Wires for Quantum Computing.” 2021 5th IEEE
Electron Devices Technology and Manufacturing Conference, EDTM 2021, 9420817,
IEEE, 2021, doi:10.1109/EDTM50988.2021.9420817.
short: F. Gao, J.Y. Zhang, J.H. Wang, M. Ming, T. Wang, J.J. Zhang, H. Watzinger,
J. Kukucka, L. Vukušić, G. Katsaros, K. Wang, G. Xu, H.O. Li, G.P. Guo, in:, 2021
5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021,
IEEE, 2021.
conference:
end_date: 2021-04-11
location: Virtual, Online
name: 'EDTM: IEEE Electron Devices Technology and Manufacturing Conference'
start_date: 2021-04-08
date_created: 2021-06-06T22:01:29Z
date_published: 2021-04-08T00:00:00Z
date_updated: 2023-10-03T12:51:59Z
day: '08'
department:
- _id: GeKa
doi: 10.1109/EDTM50988.2021.9420817
ec_funded: 1
external_id:
isi:
- '000675595800006'
isi: 1
language:
- iso: eng
month: '04'
oa_version: None
project:
- _id: 25517E86-B435-11E9-9278-68D0E5697425
call_identifier: FP7
grant_number: '335497'
name: Towards Spin qubits and Majorana fermions in Germanium selfassembled hut-wires
publication: 2021 5th IEEE Electron Devices Technology and Manufacturing Conference,
EDTM 2021
publication_identifier:
isbn:
- '9781728181769'
publication_status: published
publisher: IEEE
quality_controlled: '1'
scopus_import: '1'
status: public
title: Ge/Si quantum wires for quantum computing
type: conference
user_id: 2DF688A6-F248-11E8-B48F-1D18A9856A87
year: '2021'
...
---
_id: '9291'
abstract:
- lang: eng
text: "This .zip File contains the transport data for figures presented in the main
text and supplementary material of \"Enhancement of Proximity Induced Superconductivity
in Planar Germanium\" by K. Aggarwal, et. al. \r\nThe measurements were done using
Labber Software and the data is stored in the hdf5 file format. The files can
be opened using either the Labber Log Browser (https://labber.org/overview/) or
Labber Python API (http://labber.org/online-doc/api/LogFile.html)."
article_processing_charge: No
author:
- first_name: Georgios
full_name: Katsaros, Georgios
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
orcid: 0000-0001-8342-202X
citation:
ama: 'Katsaros G. Raw transport data for: Enhancement of proximity induced superconductivity
in planar germanium. 2021. doi:10.15479/AT:ISTA:9291'
apa: 'Katsaros, G. (2021). Raw transport data for: Enhancement of proximity induced
superconductivity in planar germanium. Institute of Science and Technology Austria.
https://doi.org/10.15479/AT:ISTA:9291'
chicago: 'Katsaros, Georgios. “Raw Transport Data for: Enhancement of Proximity
Induced Superconductivity in Planar Germanium.” Institute of Science and Technology
Austria, 2021. https://doi.org/10.15479/AT:ISTA:9291.'
ieee: 'G. Katsaros, “Raw transport data for: Enhancement of proximity induced superconductivity
in planar germanium.” Institute of Science and Technology Austria, 2021.'
ista: 'Katsaros G. 2021. Raw transport data for: Enhancement of proximity induced
superconductivity in planar germanium, Institute of Science and Technology Austria,
10.15479/AT:ISTA:9291.'
mla: 'Katsaros, Georgios. Raw Transport Data for: Enhancement of Proximity Induced
Superconductivity in Planar Germanium. Institute of Science and Technology
Austria, 2021, doi:10.15479/AT:ISTA:9291.'
short: G. Katsaros, (2021).
date_created: 2021-03-27T13:47:49Z
date_published: 2021-03-29T00:00:00Z
date_updated: 2024-02-21T12:37:14Z
day: '29'
ddc:
- '530'
department:
- _id: GeKa
doi: 10.15479/AT:ISTA:9291
file:
- access_level: open_access
checksum: 635df3c08fc13c3dac008cd421aefbe4
content_type: application/x-zip-compressed
creator: gkatsaro
date_created: 2021-03-27T13:46:17Z
date_updated: 2021-03-27T13:46:17Z
file_id: '9292'
file_name: Raw Data- Enhancement of Superconductivity in a Planar Ge hole gas.zip
file_size: 10616071
relation: main_file
success: 1
- access_level: open_access
checksum: 12b3ca69ae7509a346711baae0b02a75
content_type: text/plain
creator: dernst
date_created: 2021-04-01T07:52:56Z
date_updated: 2021-04-01T07:52:56Z
file_id: '9302'
file_name: README.txt
file_size: 470
relation: main_file
success: 1
file_date_updated: 2021-04-01T07:52:56Z
has_accepted_license: '1'
license: https://creativecommons.org/publicdomain/zero/1.0/
month: '03'
oa: 1
oa_version: Published Version
publisher: Institute of Science and Technology Austria
status: public
title: 'Raw transport data for: Enhancement of proximity induced superconductivity
in planar germanium'
tmp:
image: /images/cc_0.png
legal_code_url: https://creativecommons.org/publicdomain/zero/1.0/legalcode
name: Creative Commons Public Domain Dedication (CC0 1.0)
short: CC0 (1.0)
type: research_data
user_id: 2DF688A6-F248-11E8-B48F-1D18A9856A87
year: '2021'
...
---
_id: '8910'
abstract:
- lang: eng
text: A semiconducting nanowire fully wrapped by a superconducting shell has been
proposed as a platform for obtaining Majorana modes at small magnetic fields.
In this study, we demonstrate that the appearance of subgap states in such structures
is actually governed by the junction region in tunneling spectroscopy measurements
and not the full-shell nanowire itself. Short tunneling regions never show subgap
states, whereas longer junctions always do. This can be understood in terms of
quantum dots forming in the junction and hosting Andreev levels in the Yu-Shiba-Rusinov
regime. The intricate magnetic field dependence of the Andreev levels, through
both the Zeeman and Little-Parks effects, may result in robust zero-bias peaks—features
that could be easily misinterpreted as originating from Majorana zero modes but
are unrelated to topological superconductivity.
acknowledged_ssus:
- _id: M-Shop
- _id: NanoFab
acknowledgement: The authors thank A. Higginbotham, E. J. H. Lee and F. R. Martins
for helpful discussions. This research was supported by the Scientific Service Units
of IST Austria through resources provided by the MIBA Machine Shop and the nanofabrication
facility; the NOMIS Foundation and Microsoft; the European Union’s Horizon 2020
research and innovation program under the Marie SklodowskaCurie grant agreement
No 844511; the FETOPEN Grant Agreement No. 828948; the European Research Commission
through the grant agreement HEMs-DAM No 716655; the Spanish Ministry of Science
and Innovation through Grants PGC2018-097018-B-I00, PCI2018-093026, FIS2016-80434-P
(AEI/FEDER, EU), RYC2011-09345 (Ram´on y Cajal Programme), and the Mar´ıa de Maeztu
Programme for Units of Excellence in R&D (CEX2018-000805-M); the CSIC Research Platform
on Quantum Technologies PTI-001.
article_number: 82-88
article_processing_charge: No
article_type: original
author:
- first_name: Marco
full_name: Valentini, Marco
id: C0BB2FAC-D767-11E9-B658-BC13E6697425
last_name: Valentini
- first_name: Fernando
full_name: Peñaranda, Fernando
last_name: Peñaranda
- first_name: Andrea C
full_name: Hofmann, Andrea C
id: 340F461A-F248-11E8-B48F-1D18A9856A87
last_name: Hofmann
- first_name: Matthias
full_name: Brauns, Matthias
id: 33F94E3C-F248-11E8-B48F-1D18A9856A87
last_name: Brauns
- first_name: Robert
full_name: Hauschild, Robert
id: 4E01D6B4-F248-11E8-B48F-1D18A9856A87
last_name: Hauschild
orcid: 0000-0001-9843-3522
- first_name: Peter
full_name: Krogstrup, Peter
last_name: Krogstrup
- first_name: Pablo
full_name: San-Jose, Pablo
last_name: San-Jose
- first_name: Elsa
full_name: Prada, Elsa
last_name: Prada
- first_name: Ramón
full_name: Aguado, Ramón
last_name: Aguado
- first_name: Georgios
full_name: Katsaros, Georgios
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
orcid: 0000-0001-8342-202X
citation:
ama: Valentini M, Peñaranda F, Hofmann AC, et al. Nontopological zero-bias peaks
in full-shell nanowires induced by flux-tunable Andreev states. Science.
2021;373(6550). doi:10.1126/science.abf1513
apa: Valentini, M., Peñaranda, F., Hofmann, A. C., Brauns, M., Hauschild, R., Krogstrup,
P., … Katsaros, G. (2021). Nontopological zero-bias peaks in full-shell nanowires
induced by flux-tunable Andreev states. Science. American Association for
the Advancement of Science. https://doi.org/10.1126/science.abf1513
chicago: Valentini, Marco, Fernando Peñaranda, Andrea C Hofmann, Matthias Brauns,
Robert Hauschild, Peter Krogstrup, Pablo San-Jose, Elsa Prada, Ramón Aguado, and
Georgios Katsaros. “Nontopological Zero-Bias Peaks in Full-Shell Nanowires Induced
by Flux-Tunable Andreev States.” Science. American Association for the
Advancement of Science, 2021. https://doi.org/10.1126/science.abf1513.
ieee: M. Valentini et al., “Nontopological zero-bias peaks in full-shell
nanowires induced by flux-tunable Andreev states,” Science, vol. 373, no.
6550. American Association for the Advancement of Science, 2021.
ista: Valentini M, Peñaranda F, Hofmann AC, Brauns M, Hauschild R, Krogstrup P,
San-Jose P, Prada E, Aguado R, Katsaros G. 2021. Nontopological zero-bias peaks
in full-shell nanowires induced by flux-tunable Andreev states. Science. 373(6550),
82–88.
mla: Valentini, Marco, et al. “Nontopological Zero-Bias Peaks in Full-Shell Nanowires
Induced by Flux-Tunable Andreev States.” Science, vol. 373, no. 6550, 82–88,
American Association for the Advancement of Science, 2021, doi:10.1126/science.abf1513.
short: M. Valentini, F. Peñaranda, A.C. Hofmann, M. Brauns, R. Hauschild, P. Krogstrup,
P. San-Jose, E. Prada, R. Aguado, G. Katsaros, Science 373 (2021).
date_created: 2020-12-02T10:51:52Z
date_published: 2021-07-02T00:00:00Z
date_updated: 2024-02-21T12:40:09Z
day: '02'
department:
- _id: GeKa
- _id: Bio
doi: 10.1126/science.abf1513
ec_funded: 1
external_id:
arxiv:
- '2008.02348'
isi:
- '000677843100034'
intvolume: ' 373'
isi: 1
issue: '6550'
language:
- iso: eng
main_file_link:
- open_access: '1'
url: https://arxiv.org/abs/2008.02348
month: '07'
oa: 1
oa_version: Submitted Version
project:
- _id: 262116AA-B435-11E9-9278-68D0E5697425
name: Hybrid Semiconductor - Superconductor Quantum Devices
- _id: 26A151DA-B435-11E9-9278-68D0E5697425
call_identifier: H2020
grant_number: '844511'
name: Majorana bound states in Ge/SiGe heterostructures
publication: Science
publication_identifier:
eissn:
- '10959203'
issn:
- '00368075'
publication_status: published
publisher: American Association for the Advancement of Science
quality_controlled: '1'
related_material:
link:
- description: News on IST Homepage
relation: press_release
url: https://ist.ac.at/en/news/unfinding-a-split-electron/
record:
- id: '13286'
relation: dissertation_contains
status: public
- id: '9389'
relation: research_data
status: public
scopus_import: '1'
status: public
title: Nontopological zero-bias peaks in full-shell nanowires induced by flux-tunable
Andreev states
type: journal_article
user_id: 4359f0d1-fa6c-11eb-b949-802e58b17ae8
volume: 373
year: '2021'
...
---
_id: '10559'
abstract:
- lang: eng
text: Hole gases in planar germanium can have high mobilities in combination with
strong spin-orbit interaction and electrically tunable g factors, and are therefore
emerging as a promising platform for creating hybrid superconductor-semiconductor
devices. A key challenge towards hybrid Ge-based quantum technologies is the design
of high-quality interfaces and superconducting contacts that are robust against
magnetic fields. In this work, by combining the assets of aluminum, which provides
good contact to the Ge, and niobium, which has a significant superconducting gap,
we demonstrate highly transparent low-disordered JoFETs with relatively large
ICRN products that are capable of withstanding high magnetic fields. We furthermore
demonstrate the ability of phase-biasing individual JoFETs, opening up an avenue
to explore topological superconductivity in planar Ge. The persistence of superconductivity
in the reported hybrid devices beyond 1.8 T paves the way towards integrating
spin qubits and proximity-induced superconductivity on the same chip.
acknowledged_ssus:
- _id: NanoFab
- _id: M-Shop
acknowledgement: This research and related results were made possible with the support
of the NOMIS Foundation. This research was supported by the Scientific Service Units
of IST Austria through resources provided by the MIBA Machine Shop and the nanofabrication
facility, the European Union's Horizon 2020 research and innovation program under
the Marie Sklodowska-Curie Grant agreement No. 844511 Grant Agreement No. 862046.
ICN2 acknowledge funding from Generalitat de Catalunya 2017 SGR 327. ICN2 is supported
by the Severo Ochoa program from Spanish MINECO (Grant No. SEV-2017-0706) and is
funded by the CERCA Programme/Generalitat de Catalunya. Part of the present work
has been performed in the framework of Universitat Autnoma de Barcelona Materials
Science PhD program. The HAADF-STEM microscopy was conducted in the Laboratorio
de Microscopias Avanzadas at Instituto de Nanociencia de Aragon-Universidad de Zaragoza.
Authors acknowledge the LMA-INA for offering access to their instruments and expertise.
We acknowledge support from CSIC Research Platform on Quantum Technologies PTI-001.
This project has received funding from the European Union's Horizon 2020 research
and innovation programme under Grant Agreement No. 823717 ESTEEM3. M.B. acknowledges
support from SUR Generalitat de Catalunya and the EU Social Fund; project ref. 2020
FI 00103. G.S. and M.V. acknowledge support through a projectruimte grant associated
with the Netherlands Organization of Scientific Research (NWO). J.D. acknowledges
support through FRIPRO-project 274853, which is funded by the Research Council of
Norway.
article_number: L022005
article_processing_charge: No
article_type: original
author:
- first_name: Kushagra
full_name: Aggarwal, Kushagra
id: b22ab905-3539-11eb-84c3-fc159dcd79cb
last_name: Aggarwal
orcid: 0000-0001-9985-9293
- first_name: Andrea C
full_name: Hofmann, Andrea C
id: 340F461A-F248-11E8-B48F-1D18A9856A87
last_name: Hofmann
- first_name: Daniel
full_name: Jirovec, Daniel
id: 4C473F58-F248-11E8-B48F-1D18A9856A87
last_name: Jirovec
orcid: 0000-0002-7197-4801
- first_name: Ivan
full_name: Prieto Gonzalez, Ivan
id: 2A307FE2-F248-11E8-B48F-1D18A9856A87
last_name: Prieto Gonzalez
orcid: 0000-0002-7370-5357
- first_name: Amir
full_name: Sammak, Amir
last_name: Sammak
- first_name: Marc
full_name: Botifoll, Marc
last_name: Botifoll
- first_name: Sara
full_name: Martí-Sánchez, Sara
last_name: Martí-Sánchez
- first_name: Menno
full_name: Veldhorst, Menno
last_name: Veldhorst
- first_name: Jordi
full_name: Arbiol, Jordi
last_name: Arbiol
- first_name: Giordano
full_name: Scappucci, Giordano
last_name: Scappucci
- first_name: Jeroen
full_name: Danon, Jeroen
last_name: Danon
- first_name: Georgios
full_name: Katsaros, Georgios
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
orcid: 0000-0001-8342-202X
citation:
ama: Aggarwal K, Hofmann AC, Jirovec D, et al. Enhancement of proximity-induced
superconductivity in a planar Ge hole gas. Physical Review Research. 2021;3(2).
doi:10.1103/physrevresearch.3.l022005
apa: Aggarwal, K., Hofmann, A. C., Jirovec, D., Prieto Gonzalez, I., Sammak, A.,
Botifoll, M., … Katsaros, G. (2021). Enhancement of proximity-induced superconductivity
in a planar Ge hole gas. Physical Review Research. American Physical Society.
https://doi.org/10.1103/physrevresearch.3.l022005
chicago: Aggarwal, Kushagra, Andrea C Hofmann, Daniel Jirovec, Ivan Prieto Gonzalez,
Amir Sammak, Marc Botifoll, Sara Martí-Sánchez, et al. “Enhancement of Proximity-Induced
Superconductivity in a Planar Ge Hole Gas.” Physical Review Research. American
Physical Society, 2021. https://doi.org/10.1103/physrevresearch.3.l022005.
ieee: K. Aggarwal et al., “Enhancement of proximity-induced superconductivity
in a planar Ge hole gas,” Physical Review Research, vol. 3, no. 2. American
Physical Society, 2021.
ista: Aggarwal K, Hofmann AC, Jirovec D, Prieto Gonzalez I, Sammak A, Botifoll M,
Martí-Sánchez S, Veldhorst M, Arbiol J, Scappucci G, Danon J, Katsaros G. 2021.
Enhancement of proximity-induced superconductivity in a planar Ge hole gas. Physical
Review Research. 3(2), L022005.
mla: Aggarwal, Kushagra, et al. “Enhancement of Proximity-Induced Superconductivity
in a Planar Ge Hole Gas.” Physical Review Research, vol. 3, no. 2, L022005,
American Physical Society, 2021, doi:10.1103/physrevresearch.3.l022005.
short: K. Aggarwal, A.C. Hofmann, D. Jirovec, I. Prieto Gonzalez, A. Sammak, M.
Botifoll, S. Martí-Sánchez, M. Veldhorst, J. Arbiol, G. Scappucci, J. Danon, G.
Katsaros, Physical Review Research 3 (2021).
date_created: 2021-12-16T18:50:57Z
date_published: 2021-04-15T00:00:00Z
date_updated: 2024-02-21T12:41:26Z
day: '15'
ddc:
- '620'
department:
- _id: GeKa
doi: 10.1103/physrevresearch.3.l022005
ec_funded: 1
external_id:
arxiv:
- '2012.00322'
file:
- access_level: open_access
checksum: 60a1bc9c9b616b1b155044bb8cfc6484
content_type: application/pdf
creator: cchlebak
date_created: 2021-12-17T08:12:37Z
date_updated: 2021-12-17T08:12:37Z
file_id: '10561'
file_name: 2021_PhysRevResearch_Aggarwal.pdf
file_size: 1917512
relation: main_file
success: 1
file_date_updated: 2021-12-17T08:12:37Z
has_accepted_license: '1'
intvolume: ' 3'
issue: '2'
keyword:
- general engineering
language:
- iso: eng
month: '04'
oa: 1
oa_version: Published Version
project:
- _id: 26A151DA-B435-11E9-9278-68D0E5697425
call_identifier: H2020
grant_number: '844511'
name: Majorana bound states in Ge/SiGe heterostructures
- _id: 237E5020-32DE-11EA-91FC-C7463DDC885E
call_identifier: H2020
grant_number: '862046'
name: TOPOLOGICALLY PROTECTED AND SCALABLE QUANTUM BITS
publication: Physical Review Research
publication_identifier:
issn:
- 2643-1564
publication_status: published
publisher: American Physical Society
quality_controlled: '1'
related_material:
record:
- id: '8831'
relation: earlier_version
status: public
- id: '8834'
relation: research_data
status: public
scopus_import: '1'
status: public
title: Enhancement of proximity-induced superconductivity in a planar Ge hole gas
tmp:
image: /images/cc_by.png
legal_code_url: https://creativecommons.org/licenses/by/4.0/legalcode
name: Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)
short: CC BY (4.0)
type: journal_article
user_id: 8b945eb4-e2f2-11eb-945a-df72226e66a9
volume: 3
year: '2021'
...
---
_id: '8911'
abstract:
- lang: eng
text: "In the worldwide endeavor for disruptive quantum technologies, germanium
is emerging as a versatile material to realize devices capable of encoding, processing,
or transmitting quantum information. These devices leverage special properties
of the germanium valence-band states, commonly known as holes, such as their inherently
strong spin-orbit coupling and the ability to host superconducting pairing correlations.
In this Review, we initially introduce the physics of holes in low-dimensional
germanium structures with key insights from a theoretical perspective. We then
examine the material science progress underpinning germanium-based planar heterostructures
and nanowires. We review the most significant experimental results demonstrating
key building blocks for quantum technology, such as an electrically driven universal
quantum gate set with spin qubits in quantum dots and superconductor-semiconductor
devices for hybrid quantum systems. We conclude by identifying the most promising
prospects\r\ntoward scalable quantum information processing. "
acknowledgement: "G.S., M.W.,F.A.Z acknowledge financial support from The Netherlands
Organization for Scientific Research (NWO). F.Z., D.L., G.K. acknowledge funding
from the European Union’s Horizon 2020 research and innovation programme under Grand
Agreement Nr. 862046. G.K. acknowledges funding from FP7 ERC Starting Grant 335497,
FWF Y 715-N30, FWF P-30207. S.D. acknowledges support from the European Union’s
Horizon 2020 program under Grant\r\nAgreement No. 81050 and from the Agence Nationale
de la Recherche through the TOPONANO and CMOSQSPIN projects. J.Z. acknowledges support
from the National Key R&D Program of China (Grant No. 2016YFA0301701) and Strategic
Priority Research Program of CAS (Grant No. XDB30000000). D.L. and C.K. acknowledge
the Swiss National Science Foundation and NCCR QSIT."
article_processing_charge: No
article_type: original
author:
- first_name: Giordano
full_name: Scappucci, Giordano
last_name: Scappucci
- first_name: Christoph
full_name: Kloeffel, Christoph
last_name: Kloeffel
- first_name: Floris A.
full_name: Zwanenburg, Floris A.
last_name: Zwanenburg
- first_name: Daniel
full_name: Loss, Daniel
last_name: Loss
- first_name: Maksym
full_name: Myronov, Maksym
last_name: Myronov
- first_name: Jian-Jun
full_name: Zhang, Jian-Jun
last_name: Zhang
- first_name: Silvano De
full_name: Franceschi, Silvano De
last_name: Franceschi
- first_name: Georgios
full_name: Katsaros, Georgios
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
orcid: 0000-0001-8342-202X
- first_name: Menno
full_name: Veldhorst, Menno
last_name: Veldhorst
citation:
ama: Scappucci G, Kloeffel C, Zwanenburg FA, et al. The germanium quantum information
route. Nature Reviews Materials. 2021;6:926–943. doi:10.1038/s41578-020-00262-z
apa: Scappucci, G., Kloeffel, C., Zwanenburg, F. A., Loss, D., Myronov, M., Zhang,
J.-J., … Veldhorst, M. (2021). The germanium quantum information route. Nature
Reviews Materials. Springer Nature. https://doi.org/10.1038/s41578-020-00262-z
chicago: Scappucci, Giordano, Christoph Kloeffel, Floris A. Zwanenburg, Daniel Loss,
Maksym Myronov, Jian-Jun Zhang, Silvano De Franceschi, Georgios Katsaros, and
Menno Veldhorst. “The Germanium Quantum Information Route.” Nature Reviews
Materials. Springer Nature, 2021. https://doi.org/10.1038/s41578-020-00262-z.
ieee: G. Scappucci et al., “The germanium quantum information route,” Nature
Reviews Materials, vol. 6. Springer Nature, pp. 926–943, 2021.
ista: Scappucci G, Kloeffel C, Zwanenburg FA, Loss D, Myronov M, Zhang J-J, Franceschi
SD, Katsaros G, Veldhorst M. 2021. The germanium quantum information route. Nature
Reviews Materials. 6, 926–943.
mla: Scappucci, Giordano, et al. “The Germanium Quantum Information Route.” Nature
Reviews Materials, vol. 6, Springer Nature, 2021, pp. 926–943, doi:10.1038/s41578-020-00262-z.
short: G. Scappucci, C. Kloeffel, F.A. Zwanenburg, D. Loss, M. Myronov, J.-J. Zhang,
S.D. Franceschi, G. Katsaros, M. Veldhorst, Nature Reviews Materials 6 (2021)
926–943.
date_created: 2020-12-02T10:52:51Z
date_published: 2021-10-01T00:00:00Z
date_updated: 2024-03-07T14:48:57Z
day: '01'
department:
- _id: GeKa
doi: 10.1038/s41578-020-00262-z
ec_funded: 1
external_id:
arxiv:
- '2004.08133'
isi:
- '000600826100003'
intvolume: ' 6'
isi: 1
language:
- iso: eng
main_file_link:
- open_access: '1'
url: https://arxiv.org/abs/2004.08133
month: '10'
oa: 1
oa_version: Preprint
page: '926–943 '
project:
- _id: 25517E86-B435-11E9-9278-68D0E5697425
call_identifier: FP7
grant_number: '335497'
name: Towards Spin qubits and Majorana fermions in Germanium selfassembled hut-wires
- _id: 2552F888-B435-11E9-9278-68D0E5697425
call_identifier: FWF
grant_number: Y00715
name: Loch Spin-Qubits und Majorana-Fermionen in Germanium
- _id: 2641CE5E-B435-11E9-9278-68D0E5697425
call_identifier: FWF
grant_number: P30207
name: Hole spin orbit qubits in Ge quantum wells
publication: Nature Reviews Materials
publication_identifier:
eissn:
- 2058-8437
publication_status: published
publisher: Springer Nature
quality_controlled: '1'
scopus_import: '1'
status: public
title: The germanium quantum information route
type: journal_article
user_id: 3E5EF7F0-F248-11E8-B48F-1D18A9856A87
volume: 6
year: '2021'
...
---
_id: '8909'
abstract:
- lang: eng
text: Spin qubits are considered to be among the most promising candidates for building
a quantum processor. Group IV hole spin qubits have moved into the focus of interest
due to the ease of operation and compatibility with Si technology. In addition,
Ge offers the option for monolithic superconductor-semiconductor integration.
Here we demonstrate a hole spin qubit operating at fields below 10 mT, the critical
field of Al, by exploiting the large out-of-plane hole g-factors in planar Ge
and by encoding the qubit into the singlet-triplet states of a double quantum
dot. We observe electrically controlled X and Z-rotations with tunable frequencies
exceeding 100 MHz and dephasing times of 1μs which we extend beyond 15μs with
echo techniques. These results show that Ge hole singlet triplet qubits outperform
their electronic Si and GaAs based counterparts in speed and coherence, respectively.
In addition, they are on par with Ge single spin qubits, but can be operated at
much lower fields underlining their potential for on chip integration with superconducting
technologies.
acknowledged_ssus:
- _id: M-Shop
- _id: NanoFab
acknowledgement: This research was supported by the Scientific Service Units of Institute
of Science and Technology (IST) Austria through resources provided by the Miba Machine
Shop and the nanofabrication facility, and was made possible with the support of
the NOMIS Foundation. This project has received funding from the European Union’s
Horizon 2020 research and innovation programme under Marie Sklodowska-Curie grant
agreements no. 844511 and no. 75441, and by the Austrian Science Fund FWF-P 30207
project. A.B. acknowledges support from the European Union Horizon 2020 FET project
microSPIRE, no. 766955. M. Botifoll and J.A. acknowledge funding from Generalitat
de Catalunya 2017 SGR 327. The Catalan Institute of Nanoscience and Nanotechnology
(ICN2) is supported by the Severo Ochoa programme from the Spanish Ministery of
Economy (MINECO) (grant no. SEV-2017-0706) and is funded by the Catalonian Research
Centre (CERCA) Programme, Generalitat de Catalunya. Part of the present work has
been performed within the framework of the Universitat Autónoma de Barcelona Materials
Science PhD programme. Part of the HAADF scanning transmission electron microscopy
was conducted in the Laboratorio de Microscopias Avanzadas at Instituto de Nanociencia
de Aragon, Universidad de Zaragoza. ICN2 acknowledge support from the Spanish Superior
Council of Scientific Research (CSIC) Research Platform on Quantum Technologies
PTI-001. M.B. acknowledges funding from the Catalan Agency for Management of University
and Research Grants (AGAUR) Generalitat de Catalunya formation of investigators
(FI) PhD grant.
article_processing_charge: No
article_type: original
author:
- first_name: Daniel
full_name: Jirovec, Daniel
id: 4C473F58-F248-11E8-B48F-1D18A9856A87
last_name: Jirovec
orcid: 0000-0002-7197-4801
- first_name: Andrea C
full_name: Hofmann, Andrea C
id: 340F461A-F248-11E8-B48F-1D18A9856A87
last_name: Hofmann
- first_name: Andrea
full_name: Ballabio, Andrea
last_name: Ballabio
- first_name: Philipp M.
full_name: Mutter, Philipp M.
last_name: Mutter
- first_name: Giulio
full_name: Tavani, Giulio
last_name: Tavani
- first_name: Marc
full_name: Botifoll, Marc
last_name: Botifoll
- first_name: Alessandro
full_name: Crippa, Alessandro
id: 1F2B21A2-F6E7-11E9-9B82-F7DBE5697425
last_name: Crippa
orcid: 0000-0002-2968-611X
- first_name: Josip
full_name: Kukucka, Josip
id: 3F5D8856-F248-11E8-B48F-1D18A9856A87
last_name: Kukucka
- first_name: Oliver
full_name: Sagi, Oliver
id: 71616374-A8E9-11E9-A7CA-09ECE5697425
last_name: Sagi
- first_name: Frederico
full_name: Martins, Frederico
id: 38F80F9A-1CB8-11EA-BC76-B49B3DDC885E
last_name: Martins
orcid: 0000-0003-2668-2401
- first_name: Jaime
full_name: Saez Mollejo, Jaime
id: e0390f72-f6e0-11ea-865d-862393336714
last_name: Saez Mollejo
- first_name: Ivan
full_name: Prieto Gonzalez, Ivan
id: 2A307FE2-F248-11E8-B48F-1D18A9856A87
last_name: Prieto Gonzalez
orcid: 0000-0002-7370-5357
- first_name: Maksim
full_name: Borovkov, Maksim
id: 2ac7a0a2-3562-11eb-9256-fbd18ea55087
last_name: Borovkov
- first_name: Jordi
full_name: Arbiol, Jordi
last_name: Arbiol
- first_name: Daniel
full_name: Chrastina, Daniel
last_name: Chrastina
- first_name: Giovanni
full_name: Isella, Giovanni
last_name: Isella
- first_name: Georgios
full_name: Katsaros, Georgios
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
orcid: 0000-0001-8342-202X
citation:
ama: Jirovec D, Hofmann AC, Ballabio A, et al. A singlet triplet hole spin qubit
in planar Ge. Nature Materials. 2021;20(8):1106–1112. doi:10.1038/s41563-021-01022-2
apa: Jirovec, D., Hofmann, A. C., Ballabio, A., Mutter, P. M., Tavani, G., Botifoll,
M., … Katsaros, G. (2021). A singlet triplet hole spin qubit in planar Ge. Nature
Materials. Springer Nature. https://doi.org/10.1038/s41563-021-01022-2
chicago: Jirovec, Daniel, Andrea C Hofmann, Andrea Ballabio, Philipp M. Mutter,
Giulio Tavani, Marc Botifoll, Alessandro Crippa, et al. “A Singlet Triplet Hole
Spin Qubit in Planar Ge.” Nature Materials. Springer Nature, 2021. https://doi.org/10.1038/s41563-021-01022-2.
ieee: D. Jirovec et al., “A singlet triplet hole spin qubit in planar Ge,”
Nature Materials, vol. 20, no. 8. Springer Nature, pp. 1106–1112, 2021.
ista: Jirovec D, Hofmann AC, Ballabio A, Mutter PM, Tavani G, Botifoll M, Crippa
A, Kukucka J, Sagi O, Martins F, Saez Mollejo J, Prieto Gonzalez I, Borovkov M,
Arbiol J, Chrastina D, Isella G, Katsaros G. 2021. A singlet triplet hole spin
qubit in planar Ge. Nature Materials. 20(8), 1106–1112.
mla: Jirovec, Daniel, et al. “A Singlet Triplet Hole Spin Qubit in Planar Ge.” Nature
Materials, vol. 20, no. 8, Springer Nature, 2021, pp. 1106–1112, doi:10.1038/s41563-021-01022-2.
short: D. Jirovec, A.C. Hofmann, A. Ballabio, P.M. Mutter, G. Tavani, M. Botifoll,
A. Crippa, J. Kukucka, O. Sagi, F. Martins, J. Saez Mollejo, I. Prieto Gonzalez,
M. Borovkov, J. Arbiol, D. Chrastina, G. Isella, G. Katsaros, Nature Materials
20 (2021) 1106–1112.
date_created: 2020-12-02T10:50:47Z
date_published: 2021-08-01T00:00:00Z
date_updated: 2024-03-28T23:30:27Z
day: '01'
department:
- _id: GeKa
- _id: NanoFab
- _id: GradSch
doi: 10.1038/s41563-021-01022-2
ec_funded: 1
external_id:
arxiv:
- '2011.13755'
isi:
- '000657596400001'
intvolume: ' 20'
isi: 1
issue: '8'
language:
- iso: eng
main_file_link:
- open_access: '1'
url: https://arxiv.org/abs/2011.13755
month: '08'
oa: 1
oa_version: Preprint
page: 1106–1112
project:
- _id: 26A151DA-B435-11E9-9278-68D0E5697425
call_identifier: H2020
grant_number: '844511'
name: Majorana bound states in Ge/SiGe heterostructures
- _id: 260C2330-B435-11E9-9278-68D0E5697425
call_identifier: H2020
grant_number: '754411'
name: ISTplus - Postdoctoral Fellowships
- _id: 2641CE5E-B435-11E9-9278-68D0E5697425
call_identifier: FWF
grant_number: P30207
name: Hole spin orbit qubits in Ge quantum wells
- _id: 262116AA-B435-11E9-9278-68D0E5697425
name: Hybrid Semiconductor - Superconductor Quantum Devices
publication: Nature Materials
publication_identifier:
eissn:
- 1476-4660
issn:
- 1476-1122
publication_status: published
publisher: Springer Nature
quality_controlled: '1'
related_material:
link:
- description: News on IST Homepage
relation: press_release
url: https://ist.ac.at/en/news/quantum-computing-with-holes/
record:
- id: '9323'
relation: research_data
status: public
- id: '10058'
relation: dissertation_contains
status: public
scopus_import: '1'
status: public
title: A singlet triplet hole spin qubit in planar Ge
type: journal_article
user_id: 4359f0d1-fa6c-11eb-b949-802e58b17ae8
volume: 20
year: '2021'
...
---
_id: '10066'
abstract:
- lang: eng
text: The potential of Si and SiGe-based devices for the scaling of quantum circuits
is tainted by device variability. Each device needs to be tuned to operation conditions.
We give a key step towards tackling this variability with an algorithm that, without
modification, is capable of tuning a 4-gate Si FinFET, a 5-gate GeSi nanowire
and a 7-gate SiGe heterostructure double quantum dot device from scratch. We achieve
tuning times of 30, 10, and 92 minutes, respectively. The algorithm also provides
insight into the parameter space landscape for each of these devices. These results
show that overarching solutions for the tuning of quantum devices are enabled
by machine learning.
acknowledged_ssus:
- _id: NanoFab
acknowledgement: "We acknowledge Ang Li, Erik P. A. M. Bakkers (University of Eindhoven)
for the fabrication of the Ge/Si nanowire. This work was supported by the Royal
Society, the EPSRC National Quantum Technology Hub in Networked Quantum Information
Technology (EP/M013243/1), Quantum Technology Capital (EP/N014995/1), EPSRC Platform
Grant\r\n(EP/R029229/1), the European Research Council (Grant agreement 948932),
the Swiss Nanoscience Institute, the\r\nNCCR SPIN, the EU H2020 European Microkelvin
Platform EMP grant No. 824109, the Scientific Service Units\r\nof IST Austria through
resources provided by the nanofabrication facility and, the FWF-P30207 project.
This publication was also made possible through support from Templeton World Charity
Foundation and John Templeton Foundation. The opinions expressed in this publication
are those of the authors and do not necessarily reflect the views of the Templeton
Foundations."
article_number: '2107.12975'
article_processing_charge: No
author:
- first_name: B.
full_name: Severin, B.
last_name: Severin
- first_name: D. T.
full_name: Lennon, D. T.
last_name: Lennon
- first_name: L. C.
full_name: Camenzind, L. C.
last_name: Camenzind
- first_name: F.
full_name: Vigneau, F.
last_name: Vigneau
- first_name: F.
full_name: Fedele, F.
last_name: Fedele
- first_name: Daniel
full_name: Jirovec, Daniel
id: 4C473F58-F248-11E8-B48F-1D18A9856A87
last_name: Jirovec
orcid: 0000-0002-7197-4801
- first_name: A.
full_name: Ballabio, A.
last_name: Ballabio
- first_name: D.
full_name: Chrastina, D.
last_name: Chrastina
- first_name: G.
full_name: Isella, G.
last_name: Isella
- first_name: M. de
full_name: Kruijf, M. de
last_name: Kruijf
- first_name: M. J.
full_name: Carballido, M. J.
last_name: Carballido
- first_name: S.
full_name: Svab, S.
last_name: Svab
- first_name: A. V.
full_name: Kuhlmann, A. V.
last_name: Kuhlmann
- first_name: F. R.
full_name: Braakman, F. R.
last_name: Braakman
- first_name: S.
full_name: Geyer, S.
last_name: Geyer
- first_name: F. N. M.
full_name: Froning, F. N. M.
last_name: Froning
- first_name: H.
full_name: Moon, H.
last_name: Moon
- first_name: M. A.
full_name: Osborne, M. A.
last_name: Osborne
- first_name: D.
full_name: Sejdinovic, D.
last_name: Sejdinovic
- first_name: Georgios
full_name: Katsaros, Georgios
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
orcid: 0000-0001-8342-202X
- first_name: D. M.
full_name: Zumbühl, D. M.
last_name: Zumbühl
- first_name: G. A. D.
full_name: Briggs, G. A. D.
last_name: Briggs
- first_name: N.
full_name: Ares, N.
last_name: Ares
citation:
ama: Severin B, Lennon DT, Camenzind LC, et al. Cross-architecture tuning of silicon
and SiGe-based quantum devices using machine learning. arXiv. doi:10.48550/arXiv.2107.12975
apa: Severin, B., Lennon, D. T., Camenzind, L. C., Vigneau, F., Fedele, F., Jirovec,
D., … Ares, N. (n.d.). Cross-architecture tuning of silicon and SiGe-based quantum
devices using machine learning. arXiv. https://doi.org/10.48550/arXiv.2107.12975
chicago: Severin, B., D. T. Lennon, L. C. Camenzind, F. Vigneau, F. Fedele, Daniel
Jirovec, A. Ballabio, et al. “Cross-Architecture Tuning of Silicon and SiGe-Based
Quantum Devices Using Machine Learning.” ArXiv, n.d. https://doi.org/10.48550/arXiv.2107.12975.
ieee: B. Severin et al., “Cross-architecture tuning of silicon and SiGe-based
quantum devices using machine learning,” arXiv. .
ista: Severin B, Lennon DT, Camenzind LC, Vigneau F, Fedele F, Jirovec D, Ballabio
A, Chrastina D, Isella G, Kruijf M de, Carballido MJ, Svab S, Kuhlmann AV, Braakman
FR, Geyer S, Froning FNM, Moon H, Osborne MA, Sejdinovic D, Katsaros G, Zumbühl
DM, Briggs GAD, Ares N. Cross-architecture tuning of silicon and SiGe-based quantum
devices using machine learning. arXiv, 2107.12975.
mla: Severin, B., et al. “Cross-Architecture Tuning of Silicon and SiGe-Based Quantum
Devices Using Machine Learning.” ArXiv, 2107.12975, doi:10.48550/arXiv.2107.12975.
short: B. Severin, D.T. Lennon, L.C. Camenzind, F. Vigneau, F. Fedele, D. Jirovec,
A. Ballabio, D. Chrastina, G. Isella, M. de Kruijf, M.J. Carballido, S. Svab,
A.V. Kuhlmann, F.R. Braakman, S. Geyer, F.N.M. Froning, H. Moon, M.A. Osborne,
D. Sejdinovic, G. Katsaros, D.M. Zumbühl, G.A.D. Briggs, N. Ares, ArXiv (n.d.).
date_created: 2021-10-01T12:40:22Z
date_published: 2021-07-27T00:00:00Z
date_updated: 2024-03-28T23:30:27Z
day: '27'
department:
- _id: GeKa
doi: 10.48550/arXiv.2107.12975
external_id:
arxiv:
- '2107.12975'
language:
- iso: eng
main_file_link:
- open_access: '1'
url: https://doi.org/10.48550/arXiv.2107.12975
month: '07'
oa: 1
oa_version: Preprint
project:
- _id: 2641CE5E-B435-11E9-9278-68D0E5697425
call_identifier: FWF
grant_number: P30207
name: Hole spin orbit qubits in Ge quantum wells
publication: arXiv
publication_status: submitted
related_material:
record:
- id: '10058'
relation: dissertation_contains
status: public
status: public
title: Cross-architecture tuning of silicon and SiGe-based quantum devices using machine
learning
type: preprint
user_id: 2DF688A6-F248-11E8-B48F-1D18A9856A87
year: '2021'
...
---
_id: '8834'
abstract:
- lang: eng
text: "This data collection contains the transport data for figures presented in
the supplementary material of \"Enhancement of Proximity Induced Superconductivity
in Planar Germanium\" by K. Aggarwal, et. al. \r\nThe measurements were done using
Labber Software and the data is stored in the hdf5 file format. The files can
be opened using either the Labber Log Browser (https://labber.org/overview/) or
Labber Python API (http://labber.org/online-doc/api/LogFile.html).\r\n"
article_processing_charge: No
author:
- first_name: Georgios
full_name: Katsaros, Georgios
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
orcid: 0000-0001-8342-202X
citation:
ama: Katsaros G. Enhancement of proximity induced superconductivity in planar Germanium.
2020. doi:10.15479/AT:ISTA:8834
apa: Katsaros, G. (2020). Enhancement of proximity induced superconductivity in
planar Germanium. Institute of Science and Technology Austria. https://doi.org/10.15479/AT:ISTA:8834
chicago: Katsaros, Georgios. “Enhancement of Proximity Induced Superconductivity
in Planar Germanium.” Institute of Science and Technology Austria, 2020. https://doi.org/10.15479/AT:ISTA:8834.
ieee: G. Katsaros, “Enhancement of proximity induced superconductivity in planar
Germanium.” Institute of Science and Technology Austria, 2020.
ista: Katsaros G. 2020. Enhancement of proximity induced superconductivity in planar
Germanium, Institute of Science and Technology Austria, 10.15479/AT:ISTA:8834.
mla: Katsaros, Georgios. Enhancement of Proximity Induced Superconductivity in
Planar Germanium. Institute of Science and Technology Austria, 2020, doi:10.15479/AT:ISTA:8834.
short: G. Katsaros, (2020).
contributor:
- contributor_type: project_member
first_name: Kushagra
id: b22ab905-3539-11eb-84c3-fc159dcd79cb
last_name: Aggarwal
- contributor_type: project_member
first_name: Andrea C
id: 340F461A-F248-11E8-B48F-1D18A9856A87
last_name: Hofmann
- contributor_type: project_member
first_name: Daniel
id: 4C473F58-F248-11E8-B48F-1D18A9856A87
last_name: Jirovec
- contributor_type: project_member
first_name: Ivan
id: 2A307FE2-F248-11E8-B48F-1D18A9856A87
last_name: Prieto Gonzalez
- contributor_type: project_member
first_name: Amir
last_name: Sammak
- contributor_type: project_member
first_name: Marc
last_name: Botifoll
- contributor_type: project_member
first_name: Sara
last_name: Marti-Sanchez
- contributor_type: project_member
first_name: Menno
last_name: Veldhorst
- contributor_type: project_member
first_name: Jordi
last_name: Arbiol
- contributor_type: project_member
first_name: Giordano
last_name: Scappucci
- contributor_type: project_leader
first_name: Georgios
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
date_created: 2020-12-02T10:49:30Z
date_published: 2020-12-02T00:00:00Z
date_updated: 2024-02-21T12:41:26Z
day: '02'
ddc:
- '530'
department:
- _id: GeKa
doi: 10.15479/AT:ISTA:8834
file:
- access_level: open_access
checksum: 898607ac9d7cfbd5c7dd84bcb6d8a924
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:21Z
date_updated: 2020-12-02T10:46:21Z
file_id: '8836'
file_name: Figure1-ICvsVG.hdf5
file_size: 898039
relation: main_file
success: 1
- access_level: open_access
checksum: f6f5888f8425e82b4dcd5ec3db9162a6
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:21Z
date_updated: 2020-12-02T10:46:21Z
file_id: '8837'
file_name: Figure1-RNvsVG.hdf5
file_size: 184971
relation: main_file
success: 1
- access_level: open_access
checksum: 63a26c4b0299538610ec58c48c0ab1e3
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:22Z
date_updated: 2020-12-02T10:46:22Z
file_id: '8838'
file_name: Figure2-MAR.hdf5
file_size: 2097740
relation: main_file
success: 1
- access_level: open_access
checksum: 4c6795b64b05088606ab7881f801acd7
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:22Z
date_updated: 2020-12-02T10:46:22Z
file_id: '8839'
file_name: Figure3-Fraunhofer.hdf5
file_size: 911501
relation: main_file
success: 1
- access_level: open_access
checksum: 6b1b07e8ab0d6c1fead91032bf543818
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:22Z
date_updated: 2020-12-02T10:46:22Z
file_id: '8840'
file_name: Figure3-ICvsBparallel.hdf5
file_size: 384239
relation: main_file
success: 1
- access_level: open_access
checksum: d825f77f57cbf455a4ac48afeec27f5b
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:22Z
date_updated: 2020-12-02T10:46:22Z
file_id: '8841'
file_name: Figure3-ICvsBperp.hdf5
file_size: 942878
relation: main_file
success: 1
- access_level: open_access
checksum: ec81afc3697da097a224e9142322243c
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:22Z
date_updated: 2020-12-02T10:46:22Z
file_id: '8842'
file_name: Figure4-CPR.hdf5
file_size: 623246
relation: main_file
success: 1
- access_level: open_access
checksum: ca5860a8850a6874312c4ca1d7d41013
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:22Z
date_updated: 2020-12-02T10:46:22Z
file_id: '8843'
file_name: Figure4-SQUID.hdf5
file_size: 507164
relation: main_file
success: 1
- access_level: open_access
checksum: 770721205d081c847316d9122c94eb9b
content_type: text/plain
creator: gkatsaro
date_created: 2020-12-02T10:46:22Z
date_updated: 2020-12-02T10:46:22Z
file_id: '8844'
file_name: Readme.txt
file_size: 1573
relation: main_file
success: 1
- access_level: open_access
checksum: 5e2e407ca631fb15b8c3cc51c5dd3bdb
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:22Z
date_updated: 2020-12-02T10:46:22Z
file_id: '8845'
file_name: Figure S5-ICvsVG.hdf5
file_size: 842702
relation: main_file
success: 1
- access_level: open_access
checksum: 2076e5f68264ed76c297811f449d768d
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:22Z
date_updated: 2020-12-02T10:46:22Z
file_id: '8846'
file_name: Figure S5-RNvsVG.hdf5
file_size: 208921
relation: main_file
success: 1
- access_level: open_access
checksum: 5dccb801d694749fe8cb496821f12f79
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:22Z
date_updated: 2020-12-02T10:46:22Z
file_id: '8847'
file_name: Figure S8-ICvsVG.hdf5
file_size: 912249
relation: main_file
success: 1
- access_level: open_access
checksum: 2b104aee4276e594c0d50557ead36441
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:22Z
date_updated: 2020-12-02T10:46:22Z
file_id: '8848'
file_name: Figure S8-RNvsVG.hdf5
file_size: 230550
relation: main_file
success: 1
- access_level: open_access
checksum: 1645b03bdc6999d120c3fcc7012c6984
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:23Z
date_updated: 2020-12-02T10:46:23Z
file_id: '8849'
file_name: Figure S9-JoFET1-Fraunhofer.hdf5
file_size: 533581
relation: main_file
success: 1
- access_level: open_access
checksum: 7ba623bbee93e8cb5645c4866f241d43
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:23Z
date_updated: 2020-12-02T10:46:23Z
file_id: '8850'
file_name: Figure S9-JoFET1-ICvsVG.hdf5
file_size: 1394384
relation: main_file
success: 1
- access_level: open_access
checksum: 3b65ccb68cea8d3c30832fc77aa9eea3
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:23Z
date_updated: 2020-12-02T10:46:23Z
file_id: '8851'
file_name: Figure S9-JoFET2-Fraunhofer.hdf5
file_size: 548051
relation: main_file
success: 1
- access_level: open_access
checksum: 3d7394a7bc8ff08bcc7928262514d2b9
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:23Z
date_updated: 2020-12-02T10:46:23Z
file_id: '8852'
file_name: Figure S9-JoFET2-ICvsVG.hdf5
file_size: 112602
relation: main_file
success: 1
- access_level: open_access
checksum: 2ef8b3226a99fc65cad1162a52552848
content_type: text/plain
creator: gkatsaro
date_created: 2020-12-02T10:46:23Z
date_updated: 2020-12-02T10:46:23Z
file_id: '8853'
file_name: Readme.txt
file_size: 1449
relation: main_file
success: 1
- access_level: open_access
checksum: 361ef6521f6b23223a34f8cf9645ee68
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:23Z
date_updated: 2020-12-02T10:46:23Z
file_id: '8854'
file_name: dev2-jj2-ICvsVG-Tdependence_1000mK.hdf5
file_size: 149502
relation: main_file
success: 1
- access_level: open_access
checksum: f8ff5a6dd64d68d55daa79a4145bbd9c
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:23Z
date_updated: 2020-12-02T10:46:23Z
file_id: '8855'
file_name: dev2-jj2-ICvsVG-Tdependence_100mK.hdf5
file_size: 167055
relation: main_file
success: 1
- access_level: open_access
checksum: f9309e1f1a5f727281960b01a3be64b4
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:23Z
date_updated: 2020-12-02T10:46:23Z
file_id: '8856'
file_name: dev2-jj2-ICvsVG-Tdependence_1100mK.hdf5
file_size: 149648
relation: main_file
success: 1
- access_level: open_access
checksum: e0589a34db4c5b7643c8179b0c156e48
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:23Z
date_updated: 2020-12-02T10:46:23Z
file_id: '8857'
file_name: dev2-jj2-ICvsVG-Tdependence_1200mK.hdf5
file_size: 144688
relation: main_file
success: 1
- access_level: open_access
checksum: f9736851466851cca596124b1ccdbe01
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:23Z
date_updated: 2020-12-02T10:46:23Z
file_id: '8858'
file_name: dev2-jj2-ICvsVG-Tdependence_125mK.hdf5
file_size: 148611
relation: main_file
success: 1
- access_level: open_access
checksum: d517a4781bb242f7bfb75e7c054131e4
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:23Z
date_updated: 2020-12-02T10:46:23Z
file_id: '8859'
file_name: dev2-jj2-ICvsVG-Tdependence_1300mK.hdf5
file_size: 144702
relation: main_file
success: 1
- access_level: open_access
checksum: ce1dafef1008405b7d63b9d9018bba0d
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:23Z
date_updated: 2020-12-02T10:46:23Z
file_id: '8860'
file_name: dev2-jj2-ICvsVG-Tdependence_1400mK.hdf5
file_size: 150639
relation: main_file
success: 1
- access_level: open_access
checksum: 0a13039fdb83caee41437685fe73d2b4
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:23Z
date_updated: 2020-12-02T10:46:23Z
file_id: '8861'
file_name: dev2-jj2-ICvsVG-Tdependence_1500mK.hdf5
file_size: 150819
relation: main_file
success: 1
- access_level: open_access
checksum: 6e543bc92d4dd4b9b2fcfd7992bfa101
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:24Z
date_updated: 2020-12-02T10:46:24Z
file_id: '8862'
file_name: dev2-jj2-ICvsVG-Tdependence_150mK.hdf5
file_size: 148362
relation: main_file
success: 1
- access_level: open_access
checksum: 91cfcef1edfbb5c7bed3dde4b2cee5b8
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:24Z
date_updated: 2020-12-02T10:46:24Z
file_id: '8863'
file_name: dev2-jj2-ICvsVG-Tdependence_1600mK.hdf5
file_size: 150766
relation: main_file
success: 1
- access_level: open_access
checksum: 528fa8c3128e0d79de599ba0bc715665
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:24Z
date_updated: 2020-12-02T10:46:24Z
file_id: '8864'
file_name: dev2-jj2-ICvsVG-Tdependence_1700mK.hdf5
file_size: 169554
relation: main_file
success: 1
- access_level: open_access
checksum: 9e35c7f20c0b162e205bfa520dc4535d
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:24Z
date_updated: 2020-12-02T10:46:24Z
file_id: '8865'
file_name: dev2-jj2-ICvsVG-Tdependence_175mK.hdf5
file_size: 148548
relation: main_file
success: 1
- access_level: open_access
checksum: 1fb5a8b651447a7204ae31883a1da269
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:24Z
date_updated: 2020-12-02T10:46:24Z
file_id: '8866'
file_name: dev2-jj2-ICvsVG-Tdependence_1800mK.hdf5
file_size: 147386
relation: main_file
success: 1
- access_level: open_access
checksum: 0d3ee65697bceaae15fbcd5d5a8480c1
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:24Z
date_updated: 2020-12-02T10:46:24Z
file_id: '8867'
file_name: dev2-jj2-ICvsVG-Tdependence_1900mK.hdf5
file_size: 147265
relation: main_file
success: 1
- access_level: open_access
checksum: fc386694414fee55a21adbc21c5c9b35
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:24Z
date_updated: 2020-12-02T10:46:24Z
file_id: '8868'
file_name: dev2-jj2-ICvsVG-Tdependence_2000mK.hdf5
file_size: 147371
relation: main_file
success: 1
- access_level: open_access
checksum: de7c4a302b9fbad6dbcd7dd76af9f585
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:24Z
date_updated: 2020-12-02T10:46:24Z
file_id: '8869'
file_name: dev2-jj2-ICvsVG-Tdependence_200mK.hdf5
file_size: 148576
relation: main_file
success: 1
- access_level: open_access
checksum: 3f31eb2fb17cdaa70f4f3de2f1c6a563
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:24Z
date_updated: 2020-12-02T10:46:24Z
file_id: '8870'
file_name: dev2-jj2-ICvsVG-Tdependence_20mK.hdf5
file_size: 183004
relation: main_file
success: 1
- access_level: open_access
checksum: 9044e65b660b5a90931ddcc0d4da7baa
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:24Z
date_updated: 2020-12-02T10:46:24Z
file_id: '8871'
file_name: dev2-jj2-ICvsVG-Tdependence_2100mK.hdf5
file_size: 131582
relation: main_file
success: 1
- access_level: open_access
checksum: a4d0644bed0076a5c3a9b10dadac217a
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:24Z
date_updated: 2020-12-02T10:46:24Z
file_id: '8872'
file_name: dev2-jj2-ICvsVG-Tdependence_2200mK.hdf5
file_size: 131645
relation: main_file
success: 1
- access_level: open_access
checksum: 7177bd4d5bd80655b513168ebdf4a0c6
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:24Z
date_updated: 2020-12-02T10:46:24Z
file_id: '8873'
file_name: dev2-jj2-ICvsVG-Tdependence_225mK.hdf5
file_size: 144366
relation: main_file
success: 1
- access_level: open_access
checksum: 62e51c2cabcb586af21222e60eb8910e
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:24Z
date_updated: 2020-12-02T10:46:24Z
file_id: '8874'
file_name: dev2-jj2-ICvsVG-Tdependence_2300mK.hdf5
file_size: 148466
relation: main_file
success: 1
- access_level: open_access
checksum: 67f943fbaae90d117f0f82c3a29e6ccc
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:25Z
date_updated: 2020-12-02T10:46:25Z
file_id: '8875'
file_name: dev2-jj2-ICvsVG-Tdependence_2400mK.hdf5
file_size: 160774
relation: main_file
success: 1
- access_level: open_access
checksum: c6b33f7c61ba57178fa613c58131fd3d
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:25Z
date_updated: 2020-12-02T10:46:25Z
file_id: '8876'
file_name: dev2-jj2-ICvsVG-Tdependence_2500mK.hdf5
file_size: 150110
relation: main_file
success: 1
- access_level: open_access
checksum: be127426947b8778cfae29a7ad2013f1
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:25Z
date_updated: 2020-12-02T10:46:25Z
file_id: '8877'
file_name: dev2-jj2-ICvsVG-Tdependence_250mK.hdf5
file_size: 144419
relation: main_file
success: 1
- access_level: open_access
checksum: 81dfeb4d94c1efec10b623e94d13faa5
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:25Z
date_updated: 2020-12-02T10:46:25Z
file_id: '8878'
file_name: dev2-jj2-ICvsVG-Tdependence_2600mK.hdf5
file_size: 148905
relation: main_file
success: 1
- access_level: open_access
checksum: 5c0a37e0de317c7d8df62075ff35f1ec
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:25Z
date_updated: 2020-12-02T10:46:25Z
file_id: '8879'
file_name: dev2-jj2-ICvsVG-Tdependence_2700mK.hdf5
file_size: 131966
relation: main_file
success: 1
- access_level: open_access
checksum: 0f25d03f2551cbd903c7522883510492
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:25Z
date_updated: 2020-12-02T10:46:25Z
file_id: '8880'
file_name: dev2-jj2-ICvsVG-Tdependence_275mK.hdf5
file_size: 144253
relation: main_file
success: 1
- access_level: open_access
checksum: 93923640d8bb599f6a459d2fda915b8b
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:25Z
date_updated: 2020-12-02T10:46:25Z
file_id: '8881'
file_name: dev2-jj2-ICvsVG-Tdependence_2800mK.hdf5
file_size: 131997
relation: main_file
success: 1
- access_level: open_access
checksum: c4fcf44e88ed344f4b747a67cae4e147
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:25Z
date_updated: 2020-12-02T10:46:25Z
file_id: '8882'
file_name: dev2-jj2-ICvsVG-Tdependence_2900mK.hdf5
file_size: 131950
relation: main_file
success: 1
- access_level: open_access
checksum: 5c1b296c6e654b16f610516b4a2fae30
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:25Z
date_updated: 2020-12-02T10:46:25Z
file_id: '8883'
file_name: dev2-jj2-ICvsVG-Tdependence_3000mK.hdf5
file_size: 150616
relation: main_file
success: 1
- access_level: open_access
checksum: 5d1a2735216b1d6abf4c2645ebe0164e
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:25Z
date_updated: 2020-12-02T10:46:25Z
file_id: '8884'
file_name: dev2-jj2-ICvsVG-Tdependence_300mK.hdf5
file_size: 144570
relation: main_file
success: 1
- access_level: open_access
checksum: 50dd9572cee3262ab4d64573289f9832
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:25Z
date_updated: 2020-12-02T10:46:25Z
file_id: '8885'
file_name: dev2-jj2-ICvsVG-Tdependence_3100mK.hdf5
file_size: 150709
relation: main_file
success: 1
- access_level: open_access
checksum: f528a1daeaddef5deef914798f5569ec
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:25Z
date_updated: 2020-12-02T10:46:25Z
file_id: '8886'
file_name: dev2-jj2-ICvsVG-Tdependence_3200mK.hdf5
file_size: 131954
relation: main_file
success: 1
- access_level: open_access
checksum: c2f53134c6877f200bdf4e5638e5c6d3
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:25Z
date_updated: 2020-12-02T10:46:25Z
file_id: '8887'
file_name: dev2-jj2-ICvsVG-Tdependence_325mK.hdf5
file_size: 144197
relation: main_file
success: 1
- access_level: open_access
checksum: 10dd70f340df3bbe0cfe8cc9e6427d50
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:25Z
date_updated: 2020-12-02T10:46:25Z
file_id: '8888'
file_name: dev2-jj2-ICvsVG-Tdependence_360mK.hdf5
file_size: 144729
relation: main_file
success: 1
- access_level: open_access
checksum: 6da19e1e3ff6f254ce859a2c6952fd3a
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:26Z
date_updated: 2020-12-02T10:46:26Z
file_id: '8889'
file_name: dev2-jj2-ICvsVG-Tdependence_400mK.hdf5
file_size: 144502
relation: main_file
success: 1
- access_level: open_access
checksum: 49b78d23ef1538e1ecfc51dcfcf423d4
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:26Z
date_updated: 2020-12-02T10:46:26Z
file_id: '8890'
file_name: dev2-jj2-ICvsVG-Tdependence_430mK.hdf5
file_size: 144280
relation: main_file
success: 1
- access_level: open_access
checksum: 065610415e2386a6e571fce3f14a2fc4
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:26Z
date_updated: 2020-12-02T10:46:26Z
file_id: '8891'
file_name: dev2-jj2-ICvsVG-Tdependence_45mK.hdf5
file_size: 173158
relation: main_file
success: 1
- access_level: open_access
checksum: 06a83873a1e72377728c080fb8db15fd
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:26Z
date_updated: 2020-12-02T10:46:26Z
file_id: '8892'
file_name: dev2-jj2-ICvsVG-Tdependence_460mK.hdf5
file_size: 144447
relation: main_file
success: 1
- access_level: open_access
checksum: c4391fda28b9a44e44f2d039ec8651b7
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:26Z
date_updated: 2020-12-02T10:46:26Z
file_id: '8893'
file_name: dev2-jj2-ICvsVG-Tdependence_500mK.hdf5
file_size: 144800
relation: main_file
success: 1
- access_level: open_access
checksum: e9d2ffde84357e8e0be5581408da9b8a
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:26Z
date_updated: 2020-12-02T10:46:26Z
file_id: '8894'
file_name: dev2-jj2-ICvsVG-Tdependence_530mK.hdf5
file_size: 144594
relation: main_file
success: 1
- access_level: open_access
checksum: d2966be14e8877ca27bf5daff23d76d6
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:26Z
date_updated: 2020-12-02T10:46:26Z
file_id: '8895'
file_name: dev2-jj2-ICvsVG-Tdependence_560mK.hdf5
file_size: 144681
relation: main_file
success: 1
- access_level: open_access
checksum: 75cc9b9a2991b356471ca956076cc376
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:26Z
date_updated: 2020-12-02T10:46:26Z
file_id: '8896'
file_name: dev2-jj2-ICvsVG-Tdependence_600mK.hdf5
file_size: 144909
relation: main_file
success: 1
- access_level: open_access
checksum: 9144cff758563b93f22c7946146fa5d5
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:26Z
date_updated: 2020-12-02T10:46:26Z
file_id: '8897'
file_name: dev2-jj2-ICvsVG-Tdependence_630mK.hdf5
file_size: 144985
relation: main_file
success: 1
- access_level: open_access
checksum: 14509a2dd1bf74d9c6fc05c046e5b6ff
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:26Z
date_updated: 2020-12-02T10:46:26Z
file_id: '8898'
file_name: dev2-jj2-ICvsVG-Tdependence_660mK.hdf5
file_size: 144782
relation: main_file
success: 1
- access_level: open_access
checksum: 9c38e2178f0fda99a02e6d7b2c034082
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:26Z
date_updated: 2020-12-02T10:46:26Z
file_id: '8899'
file_name: dev2-jj2-ICvsVG-Tdependence_700mK.hdf5
file_size: 145046
relation: main_file
success: 1
- access_level: open_access
checksum: 962a205f7ff515b9aad2df28cc5a95e7
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:26Z
date_updated: 2020-12-02T10:46:26Z
file_id: '8900'
file_name: dev2-jj2-ICvsVG-Tdependence_730mK.hdf5
file_size: 145107
relation: main_file
success: 1
- access_level: open_access
checksum: 5e24b1a7840e6a2b3b04bf922b521ec4
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:26Z
date_updated: 2020-12-02T10:46:26Z
file_id: '8901'
file_name: dev2-jj2-ICvsVG-Tdependence_760mK.hdf5
file_size: 145018
relation: main_file
success: 1
- access_level: open_access
checksum: dfbefc2d53df7afd1e534ced7d669b30
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:27Z
date_updated: 2020-12-02T10:46:27Z
file_id: '8902'
file_name: dev2-jj2-ICvsVG-Tdependence_800mK.hdf5
file_size: 145318
relation: main_file
success: 1
- access_level: open_access
checksum: 1629ae97d2748bbf02fdb2d165d236e5
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:27Z
date_updated: 2020-12-02T10:46:27Z
file_id: '8903'
file_name: dev2-jj2-ICvsVG-Tdependence_830mK.hdf5
file_size: 145322
relation: main_file
success: 1
- access_level: open_access
checksum: 618f507780343c6b9145c40d3d5b0ff0
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:27Z
date_updated: 2020-12-02T10:46:27Z
file_id: '8904'
file_name: dev2-jj2-ICvsVG-Tdependence_850mK.hdf5
file_size: 145282
relation: main_file
success: 1
- access_level: open_access
checksum: 7547c3607280c7eedca3168854976cc9
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:27Z
date_updated: 2020-12-02T10:46:27Z
file_id: '8905'
file_name: dev2-jj2-ICvsVG-Tdependence_900mK.hdf5
file_size: 143681
relation: main_file
success: 1
- access_level: open_access
checksum: 514d9a43ed3888ce7d8b26ca772cadc3
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:27Z
date_updated: 2020-12-02T10:46:27Z
file_id: '8906'
file_name: dev2-jj2-ICvsVG-Tdependence_90mK.hdf5
file_size: 167184
relation: main_file
success: 1
- access_level: open_access
checksum: 77285471178fa68c1eade48761b2aba5
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:27Z
date_updated: 2020-12-02T10:46:27Z
file_id: '8907'
file_name: dev2-jj2-ICvsVG-Tdependence_930mK.hdf5
file_size: 143491
relation: main_file
success: 1
- access_level: open_access
checksum: bf8da09fcfa20196fb7e65528a581297
content_type: application/octet-stream
creator: gkatsaro
date_created: 2020-12-02T10:46:27Z
date_updated: 2020-12-02T10:46:27Z
file_id: '8908'
file_name: dev2-jj2-ICvsVG-Tdependence_965mK.hdf5
file_size: 144057
relation: main_file
success: 1
file_date_updated: 2020-12-02T10:46:27Z
has_accepted_license: '1'
month: '12'
oa: 1
oa_version: Published Version
publisher: Institute of Science and Technology Austria
related_material:
record:
- id: '10559'
relation: used_in_publication
status: public
- id: '8831'
relation: used_in_publication
status: public
status: public
title: Enhancement of proximity induced superconductivity in planar Germanium
tmp:
image: /images/cc_0.png
legal_code_url: https://creativecommons.org/publicdomain/zero/1.0/legalcode
name: Creative Commons Public Domain Dedication (CC0 1.0)
short: CC0 (1.0)
type: research_data
user_id: 2DF688A6-F248-11E8-B48F-1D18A9856A87
year: '2020'
...
---
_id: '7541'
abstract:
- lang: eng
text: Semiconductor nanowires have been playing a crucial role in the development
of nanoscale devices for the realization of spin qubits, Majorana fermions, single
photon emitters, nanoprocessors, etc. The monolithic growth of site‐controlled
nanowires is a prerequisite toward the next generation of devices that will require
addressability and scalability. Here, combining top‐down nanofabrication and bottom‐up
self‐assembly, the growth of Ge wires on prepatterned Si (001) substrates with
controllable position, distance, length, and structure is reported. This is achieved
by a novel growth process that uses a SiGe strain‐relaxation template and can
be potentially generalized to other material combinations. Transport measurements
show an electrically tunable spin–orbit coupling, with a spin–orbit length similar
to that of III–V materials. Also, charge sensing between quantum dots in closely
spaced wires is observed, which underlines their potential for the realization
of advanced quantum devices. The reported results open a path toward scalable
qubit devices using nanowires on silicon.
acknowledged_ssus:
- _id: NanoFab
- _id: M-Shop
acknowledgement: 'This work was supported by the National Key R&D Program of China
(Grant Nos. 2016YFA0301701 and 2016YFA0300600), the NSFC (Grant Nos. 11574356, 11434010,
and 11404252), the Strategic Priority Research Program of CAS (Grant No. XDB30000000),
the ERC Starting Grant No. 335497, the FWF P32235 project, and the European Union''s
Horizon 2020 research and innovation program under Grant Agreement #862046. This
research was supported by the Scientific Service Units of IST Austria through resources
provided by the MIBA Machine Shop and the nanofabrication facility. F.L. thanks
support from DOE (Grant No. DE‐FG02‐04ER46148). H.H. thanks the Startup Funding
from Xi''an Jiaotong University.'
article_number: '1906523'
article_processing_charge: Yes (via OA deal)
article_type: original
author:
- first_name: Fei
full_name: Gao, Fei
last_name: Gao
- first_name: Jian-Huan
full_name: Wang, Jian-Huan
last_name: Wang
- first_name: Hannes
full_name: Watzinger, Hannes
id: 35DF8E50-F248-11E8-B48F-1D18A9856A87
last_name: Watzinger
- first_name: Hao
full_name: Hu, Hao
last_name: Hu
- first_name: Marko J.
full_name: Rančić, Marko J.
last_name: Rančić
- first_name: Jie-Yin
full_name: Zhang, Jie-Yin
last_name: Zhang
- first_name: Ting
full_name: Wang, Ting
last_name: Wang
- first_name: Yuan
full_name: Yao, Yuan
last_name: Yao
- first_name: Gui-Lei
full_name: Wang, Gui-Lei
last_name: Wang
- first_name: Josip
full_name: Kukucka, Josip
id: 3F5D8856-F248-11E8-B48F-1D18A9856A87
last_name: Kukucka
- first_name: Lada
full_name: Vukušić, Lada
id: 31E9F056-F248-11E8-B48F-1D18A9856A87
last_name: Vukušić
orcid: 0000-0003-2424-8636
- first_name: Christoph
full_name: Kloeffel, Christoph
last_name: Kloeffel
- first_name: Daniel
full_name: Loss, Daniel
last_name: Loss
- first_name: Feng
full_name: Liu, Feng
last_name: Liu
- first_name: Georgios
full_name: Katsaros, Georgios
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
orcid: 0000-0001-8342-202X
- first_name: Jian-Jun
full_name: Zhang, Jian-Jun
last_name: Zhang
citation:
ama: Gao F, Wang J-H, Watzinger H, et al. Site-controlled uniform Ge/Si hut wires
with electrically tunable spin-orbit coupling. Advanced Materials. 2020;32(16).
doi:10.1002/adma.201906523
apa: Gao, F., Wang, J.-H., Watzinger, H., Hu, H., Rančić, M. J., Zhang, J.-Y., …
Zhang, J.-J. (2020). Site-controlled uniform Ge/Si hut wires with electrically
tunable spin-orbit coupling. Advanced Materials. Wiley. https://doi.org/10.1002/adma.201906523
chicago: Gao, Fei, Jian-Huan Wang, Hannes Watzinger, Hao Hu, Marko J. Rančić, Jie-Yin
Zhang, Ting Wang, et al. “Site-Controlled Uniform Ge/Si Hut Wires with Electrically
Tunable Spin-Orbit Coupling.” Advanced Materials. Wiley, 2020. https://doi.org/10.1002/adma.201906523.
ieee: F. Gao et al., “Site-controlled uniform Ge/Si hut wires with electrically
tunable spin-orbit coupling,” Advanced Materials, vol. 32, no. 16. Wiley,
2020.
ista: Gao F, Wang J-H, Watzinger H, Hu H, Rančić MJ, Zhang J-Y, Wang T, Yao Y, Wang
G-L, Kukucka J, Vukušić L, Kloeffel C, Loss D, Liu F, Katsaros G, Zhang J-J. 2020.
Site-controlled uniform Ge/Si hut wires with electrically tunable spin-orbit coupling.
Advanced Materials. 32(16), 1906523.
mla: Gao, Fei, et al. “Site-Controlled Uniform Ge/Si Hut Wires with Electrically
Tunable Spin-Orbit Coupling.” Advanced Materials, vol. 32, no. 16, 1906523,
Wiley, 2020, doi:10.1002/adma.201906523.
short: F. Gao, J.-H. Wang, H. Watzinger, H. Hu, M.J. Rančić, J.-Y. Zhang, T. Wang,
Y. Yao, G.-L. Wang, J. Kukucka, L. Vukušić, C. Kloeffel, D. Loss, F. Liu, G. Katsaros,
J.-J. Zhang, Advanced Materials 32 (2020).
date_created: 2020-02-28T09:47:00Z
date_published: 2020-04-23T00:00:00Z
date_updated: 2024-02-21T12:42:12Z
day: '23'
ddc:
- '530'
department:
- _id: GeKa
doi: 10.1002/adma.201906523
ec_funded: 1
external_id:
isi:
- '000516660900001'
file:
- access_level: open_access
checksum: c622737dc295972065782558337124a2
content_type: application/pdf
creator: dernst
date_created: 2020-11-20T10:11:35Z
date_updated: 2020-11-20T10:11:35Z
file_id: '8782'
file_name: 2020_AdvancedMaterials_Gao.pdf
file_size: 5242880
relation: main_file
success: 1
file_date_updated: 2020-11-20T10:11:35Z
has_accepted_license: '1'
intvolume: ' 32'
isi: 1
issue: '16'
language:
- iso: eng
month: '04'
oa: 1
oa_version: Published Version
project:
- _id: 25517E86-B435-11E9-9278-68D0E5697425
call_identifier: FP7
grant_number: '335497'
name: Towards Spin qubits and Majorana fermions in Germanium selfassembled hut-wires
- _id: 237B3DA4-32DE-11EA-91FC-C7463DDC885E
call_identifier: FWF
grant_number: P32235
name: Towards scalable hut wire quantum devices
- _id: 237E5020-32DE-11EA-91FC-C7463DDC885E
call_identifier: H2020
grant_number: '862046'
name: TOPOLOGICALLY PROTECTED AND SCALABLE QUANTUM BITS
publication: Advanced Materials
publication_identifier:
issn:
- 0935-9648
publication_status: published
publisher: Wiley
quality_controlled: '1'
related_material:
record:
- id: '7996'
relation: dissertation_contains
status: public
- id: '9222'
relation: research_data
status: public
scopus_import: '1'
status: public
title: Site-controlled uniform Ge/Si hut wires with electrically tunable spin-orbit
coupling
tmp:
image: /images/cc_by.png
legal_code_url: https://creativecommons.org/licenses/by/4.0/legalcode
name: Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)
short: CC BY (4.0)
type: journal_article
user_id: 4359f0d1-fa6c-11eb-b949-802e58b17ae8
volume: 32
year: '2020'
...
---
_id: '9222'
article_processing_charge: No
author:
- first_name: Georgios
full_name: Katsaros, Georgios
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
orcid: 0000-0001-8342-202X
citation:
ama: 'Katsaros G. Transport data for: Site‐controlled uniform Ge/Si Hut wires with
electrically tunable spin–orbit coupling. 2020. doi:10.15479/AT:ISTA:9222'
apa: 'Katsaros, G. (2020). Transport data for: Site‐controlled uniform Ge/Si Hut
wires with electrically tunable spin–orbit coupling. Institute of Science and
Technology Austria. https://doi.org/10.15479/AT:ISTA:9222'
chicago: 'Katsaros, Georgios. “Transport Data for: Site‐controlled Uniform Ge/Si
Hut Wires with Electrically Tunable Spin–Orbit Coupling.” Institute of Science
and Technology Austria, 2020. https://doi.org/10.15479/AT:ISTA:9222.'
ieee: 'G. Katsaros, “Transport data for: Site‐controlled uniform Ge/Si Hut wires
with electrically tunable spin–orbit coupling.” Institute of Science and Technology
Austria, 2020.'
ista: 'Katsaros G. 2020. Transport data for: Site‐controlled uniform Ge/Si Hut wires
with electrically tunable spin–orbit coupling, Institute of Science and Technology
Austria, 10.15479/AT:ISTA:9222.'
mla: 'Katsaros, Georgios. Transport Data for: Site‐controlled Uniform Ge/Si Hut
Wires with Electrically Tunable Spin–Orbit Coupling. Institute of Science
and Technology Austria, 2020, doi:10.15479/AT:ISTA:9222.'
short: G. Katsaros, (2020).
contributor:
- contributor_type: research_group
first_name: Georgios
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
date_created: 2021-03-05T18:00:47Z
date_published: 2020-03-16T00:00:00Z
date_updated: 2024-02-21T12:42:13Z
day: '16'
ddc:
- '530'
department:
- _id: GeKa
doi: 10.15479/AT:ISTA:9222
file:
- access_level: open_access
checksum: 41b66e195ed3dbd73077feee77b05652
content_type: application/x-zip-compressed
creator: gkatsaro
date_created: 2021-03-05T17:50:45Z
date_updated: 2021-03-05T17:50:45Z
file_id: '9223'
file_name: DOI_SiteControlledHWs.zip
file_size: 13317557
relation: main_file
- access_level: open_access
checksum: a1dc5f710ba4b3bb7f248195ba754ab2
content_type: text/plain
creator: dernst
date_created: 2021-03-10T07:31:50Z
date_updated: 2021-03-10T07:31:50Z
file_id: '9233'
file_name: Readme.txt
file_size: 3515
relation: main_file
success: 1
file_date_updated: 2021-03-10T07:31:50Z
has_accepted_license: '1'
month: '03'
oa: 1
oa_version: Published Version
publisher: Institute of Science and Technology Austria
related_material:
record:
- id: '7541'
relation: used_in_publication
status: public
status: public
title: 'Transport data for: Site‐controlled uniform Ge/Si Hut wires with electrically
tunable spin–orbit coupling'
tmp:
image: /images/cc_0.png
legal_code_url: https://creativecommons.org/publicdomain/zero/1.0/legalcode
name: Creative Commons Public Domain Dedication (CC0 1.0)
short: CC0 (1.0)
type: research_data
user_id: 2DF688A6-F248-11E8-B48F-1D18A9856A87
year: '2020'
...
---
_id: '8203'
abstract:
- lang: eng
text: Using inelastic cotunneling spectroscopy we observe a zero field splitting
within the spin triplet manifold of Ge hut wire quantum dots. The states with
spin ±1 in the confinement direction are energetically favored by up to 55 μeV
compared to the spin 0 triplet state because of the strong spin–orbit coupling.
The reported effect should be observable in a broad class of strongly confined
hole quantum-dot systems and might need to be considered when operating hole spin
qubits.
acknowledged_ssus:
- _id: NanoFab
- _id: M-Shop
acknowledgement: "We acknowledge G. Burkard, V. N. Golovach, C. Kloeffel, D.Loss,
P. Rabl, and M. Rancič ́ for helpful discussions. We\r\nfurther acknowledge T.
Adletzberger, J. Aguilera, T. Asenov, S. Bagiante, T. Menner, L. Shafeek, P. Taus,
P. Traunmüller, and D. Waldhausl for their invaluable assistance. This research
was supported by the Scientific Service Units of IST Austria through resources provided
by the MIBA Machine Shop and the nanofabrication facility, by the FWF-P 32235 project,
by the National Key R&D Program of China (2016YFA0301701, 2016YFA0300600), and by
the European Union’s Horizon 2020 research and innovation program under grant agreement
no. 862046. All data of this publication are available at 10.15479/AT:ISTA:7689."
article_processing_charge: Yes (via OA deal)
article_type: original
author:
- first_name: Georgios
full_name: Katsaros, Georgios
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
orcid: 0000-0001-8342-202X
- first_name: Josip
full_name: Kukucka, Josip
id: 3F5D8856-F248-11E8-B48F-1D18A9856A87
last_name: Kukucka
- first_name: Lada
full_name: Vukušić, Lada
id: 31E9F056-F248-11E8-B48F-1D18A9856A87
last_name: Vukušić
orcid: 0000-0003-2424-8636
- first_name: Hannes
full_name: Watzinger, Hannes
id: 35DF8E50-F248-11E8-B48F-1D18A9856A87
last_name: Watzinger
- first_name: Fei
full_name: Gao, Fei
last_name: Gao
- first_name: Ting
full_name: Wang, Ting
last_name: Wang
orcid: 0000-0002-4619-9575
- first_name: Jian-Jun
full_name: Zhang, Jian-Jun
last_name: Zhang
- first_name: Karsten
full_name: Held, Karsten
last_name: Held
citation:
ama: Katsaros G, Kukucka J, Vukušić L, et al. Zero field splitting of heavy-hole
states in quantum dots. Nano Letters. 2020;20(7):5201-5206. doi:10.1021/acs.nanolett.0c01466
apa: Katsaros, G., Kukucka, J., Vukušić, L., Watzinger, H., Gao, F., Wang, T., …
Held, K. (2020). Zero field splitting of heavy-hole states in quantum dots. Nano
Letters. American Chemical Society. https://doi.org/10.1021/acs.nanolett.0c01466
chicago: Katsaros, Georgios, Josip Kukucka, Lada Vukušić, Hannes Watzinger, Fei
Gao, Ting Wang, Jian-Jun Zhang, and Karsten Held. “Zero Field Splitting of Heavy-Hole
States in Quantum Dots.” Nano Letters. American Chemical Society, 2020.
https://doi.org/10.1021/acs.nanolett.0c01466.
ieee: G. Katsaros et al., “Zero field splitting of heavy-hole states in quantum
dots,” Nano Letters, vol. 20, no. 7. American Chemical Society, pp. 5201–5206,
2020.
ista: Katsaros G, Kukucka J, Vukušić L, Watzinger H, Gao F, Wang T, Zhang J-J, Held
K. 2020. Zero field splitting of heavy-hole states in quantum dots. Nano Letters.
20(7), 5201–5206.
mla: Katsaros, Georgios, et al. “Zero Field Splitting of Heavy-Hole States in Quantum
Dots.” Nano Letters, vol. 20, no. 7, American Chemical Society, 2020, pp.
5201–06, doi:10.1021/acs.nanolett.0c01466.
short: G. Katsaros, J. Kukucka, L. Vukušić, H. Watzinger, F. Gao, T. Wang, J.-J.
Zhang, K. Held, Nano Letters 20 (2020) 5201–5206.
date_created: 2020-08-06T09:25:04Z
date_published: 2020-06-01T00:00:00Z
date_updated: 2024-02-21T12:44:01Z
day: '01'
ddc:
- '530'
department:
- _id: GeKa
doi: 10.1021/acs.nanolett.0c01466
ec_funded: 1
external_id:
isi:
- '000548893200066'
pmid:
- '32479090'
file:
- access_level: open_access
content_type: application/pdf
creator: dernst
date_created: 2020-08-06T09:35:37Z
date_updated: 2020-08-06T09:35:37Z
file_id: '8204'
file_name: 2020_NanoLetters_Katsaros.pdf
file_size: 3308906
relation: main_file
success: 1
file_date_updated: 2020-08-06T09:35:37Z
has_accepted_license: '1'
intvolume: ' 20'
isi: 1
issue: '7'
language:
- iso: eng
month: '06'
oa: 1
oa_version: Published Version
page: 5201-5206
pmid: 1
project:
- _id: 237B3DA4-32DE-11EA-91FC-C7463DDC885E
call_identifier: FWF
grant_number: P32235
name: Towards scalable hut wire quantum devices
- _id: 237E5020-32DE-11EA-91FC-C7463DDC885E
call_identifier: H2020
grant_number: '862046'
name: TOPOLOGICALLY PROTECTED AND SCALABLE QUANTUM BITS
publication: Nano Letters
publication_identifier:
eissn:
- 1530-6992
issn:
- 1530-6984
publication_status: published
publisher: American Chemical Society
quality_controlled: '1'
related_material:
record:
- id: '7689'
relation: research_data
status: public
scopus_import: '1'
status: public
title: Zero field splitting of heavy-hole states in quantum dots
tmp:
image: /images/cc_by.png
legal_code_url: https://creativecommons.org/licenses/by/4.0/legalcode
name: Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)
short: CC BY (4.0)
type: journal_article
user_id: c635000d-4b10-11ee-a964-aac5a93f6ac1
volume: 20
year: '2020'
...
---
_id: '7689'
abstract:
- lang: eng
text: "These are the supplementary research data to the publication \"Zero field
splitting of heavy-hole states in quantum dots\". All matrix files have the same
format. Within each column the bias voltage is changed. Each column corresponds
to either a different gate voltage or magnetic field. The voltage values are given
in mV, the current values in pA. Find a specific description in the included Readme
file.\r\n"
article_processing_charge: No
author:
- first_name: Georgios
full_name: Katsaros, Georgios
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
orcid: 0000-0001-8342-202X
citation:
ama: Katsaros G. Supplementary data for “Zero field splitting of heavy-hole states
in quantum dots.” 2020. doi:10.15479/AT:ISTA:7689
apa: Katsaros, G. (2020). Supplementary data for “Zero field splitting of heavy-hole
states in quantum dots.” Institute of Science and Technology Austria. https://doi.org/10.15479/AT:ISTA:7689
chicago: Katsaros, Georgios. “Supplementary Data for ‘Zero Field Splitting of Heavy-Hole
States in Quantum Dots.’” Institute of Science and Technology Austria, 2020. https://doi.org/10.15479/AT:ISTA:7689.
ieee: G. Katsaros, “Supplementary data for ‘Zero field splitting of heavy-hole states
in quantum dots.’” Institute of Science and Technology Austria, 2020.
ista: Katsaros G. 2020. Supplementary data for ‘Zero field splitting of heavy-hole
states in quantum dots’, Institute of Science and Technology Austria, 10.15479/AT:ISTA:7689.
mla: Katsaros, Georgios. Supplementary Data for “Zero Field Splitting of Heavy-Hole
States in Quantum Dots.” Institute of Science and Technology Austria, 2020,
doi:10.15479/AT:ISTA:7689.
short: G. Katsaros, (2020).
contributor:
- contributor_type: contact_person
first_name: Georgios
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
date_created: 2020-05-01T15:14:46Z
date_published: 2020-05-01T00:00:00Z
date_updated: 2024-02-21T12:44:02Z
day: '01'
ddc:
- '530'
department:
- _id: GeKa
doi: 10.15479/AT:ISTA:7689
ec_funded: 1
file:
- access_level: open_access
checksum: d23c0cb9e2d19e14e2f902b88b97c05d
content_type: application/x-zip-compressed
creator: gkatsaro
date_created: 2020-05-01T15:13:28Z
date_updated: 2020-07-14T12:48:02Z
file_id: '7786'
file_name: DOI_ZeroFieldSplitting.zip
file_size: 5514403
relation: main_file
file_date_updated: 2020-07-14T12:48:02Z
has_accepted_license: '1'
month: '05'
oa: 1
oa_version: Published Version
project:
- _id: 237E5020-32DE-11EA-91FC-C7463DDC885E
call_identifier: H2020
grant_number: '862046'
name: TOPOLOGICALLY PROTECTED AND SCALABLE QUANTUM BITS
- _id: 237B3DA4-32DE-11EA-91FC-C7463DDC885E
call_identifier: FWF
grant_number: P32235
name: Towards scalable hut wire quantum devices
publisher: Institute of Science and Technology Austria
related_material:
record:
- id: '8203'
relation: used_in_publication
status: public
status: public
title: Supplementary data for "Zero field splitting of heavy-hole states in quantum
dots"
tmp:
image: /images/cc_0.png
legal_code_url: https://creativecommons.org/publicdomain/zero/1.0/legalcode
name: Creative Commons Public Domain Dedication (CC0 1.0)
short: CC0 (1.0)
type: research_data
user_id: 2DF688A6-F248-11E8-B48F-1D18A9856A87
year: '2020'
...
---
_id: '8831'
abstract:
- lang: eng
text: Holes in planar Ge have high mobilities, strong spin-orbit interaction and
electrically tunable g-factors, and are therefore emerging as a promising candidate
for hybrid superconductorsemiconductor devices. This is further motivated by the
observation of supercurrent transport in planar Ge Josephson Field effect transistors
(JoFETs). A key challenge towards hybrid germanium quantum technology is the design
of high quality interfaces and superconducting contacts that are robust against
magnetic fields. By combining the assets of Al, which has a long superconducting
coherence, and Nb, which has a significant superconducting gap, we form low-disordered
JoFETs with large ICRN products that are capable of withstanding high magnetic
fields. We furthermore demonstrate the ability of phase-biasing individual JoFETs
opening up an avenue to explore topological superconductivity in planar Ge. The
persistence of superconductivity in the reported hybrid devices beyond 1.8 T paves
the way towards integrating spin qubits and proximity-induced superconductivity
on the same chip.
acknowledged_ssus:
- _id: M-Shop
- _id: NanoFab
acknowledgement: "This research and related results were made possible with the support
of the NOMIS Foundation. This research was supported by the Scientific Service Units
of IST Austria through resources provided by the MIBA Machine Shop and the nanofabrication
facility, the European Union’s Horizon 2020 research and innovation program under
the Marie Sklodowska-Curie grant agreement #844511 and the Grant Agreement #862046.
ICN2 acknowledge funding from Generalitat de Catalunya 2017 SGR 327. ICN2 is supported
by the Severo Ochoa\r\nprogram from Spanish MINECO (Grant No. SEV2017-0706) and
is funded by the CERCA Programme / Generalitat de Catalunya. Part of the present
work has been performed in the framework of Universitat Aut`onoma de Barcelona Materials
Science PhD program. The HAADF-STEM microscopy was conducted in the Laboratorio
de Microscopias Avanzadas at Instituto de Nanociencia de Aragon-Universidad de Zaragoza.
Authors acknowledge the LMA-INA for offering access to their instruments and expertise.
We acknowledge support from CSIC Research Platform on Quantum Technologies PTI-001.
This project has received funding from\r\nthe European Union’s Horizon 2020 research
and innovation programme under grant agreement No 823717 – ESTEEM3. M.B. acknowledges
support from SUR Generalitat de Catalunya and the EU Social Fund; project ref. 2020
FI 00103. GS and MV acknowledge support through a projectruimte grant associated
with the Netherlands Organization of Scientific Research (NWO)."
article_number: '2012.00322'
article_processing_charge: No
author:
- first_name: Kushagra
full_name: Aggarwal, Kushagra
id: b22ab905-3539-11eb-84c3-fc159dcd79cb
last_name: Aggarwal
orcid: 0000-0001-9985-9293
- first_name: Andrea C
full_name: Hofmann, Andrea C
id: 340F461A-F248-11E8-B48F-1D18A9856A87
last_name: Hofmann
- first_name: Daniel
full_name: Jirovec, Daniel
id: 4C473F58-F248-11E8-B48F-1D18A9856A87
last_name: Jirovec
orcid: 0000-0002-7197-4801
- first_name: Ivan
full_name: Prieto Gonzalez, Ivan
id: 2A307FE2-F248-11E8-B48F-1D18A9856A87
last_name: Prieto Gonzalez
orcid: 0000-0002-7370-5357
- first_name: Amir
full_name: Sammak, Amir
last_name: Sammak
- first_name: Marc
full_name: Botifoll, Marc
last_name: Botifoll
- first_name: Sara
full_name: Marti-Sanchez, Sara
last_name: Marti-Sanchez
- first_name: Menno
full_name: Veldhorst, Menno
last_name: Veldhorst
- first_name: Jordi
full_name: Arbiol, Jordi
last_name: Arbiol
- first_name: Giordano
full_name: Scappucci, Giordano
last_name: Scappucci
- first_name: Georgios
full_name: Katsaros, Georgios
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
orcid: 0000-0001-8342-202X
citation:
ama: Aggarwal K, Hofmann AC, Jirovec D, et al. Enhancement of proximity induced
superconductivity in planar Germanium. arXiv.
apa: Aggarwal, K., Hofmann, A. C., Jirovec, D., Prieto Gonzalez, I., Sammak, A.,
Botifoll, M., … Katsaros, G. (n.d.). Enhancement of proximity induced superconductivity
in planar Germanium. arXiv.
chicago: Aggarwal, Kushagra, Andrea C Hofmann, Daniel Jirovec, Ivan Prieto Gonzalez,
Amir Sammak, Marc Botifoll, Sara Marti-Sanchez, et al. “Enhancement of Proximity
Induced Superconductivity in Planar Germanium.” ArXiv, n.d.
ieee: K. Aggarwal et al., “Enhancement of proximity induced superconductivity
in planar Germanium,” arXiv. .
ista: Aggarwal K, Hofmann AC, Jirovec D, Prieto Gonzalez I, Sammak A, Botifoll M,
Marti-Sanchez S, Veldhorst M, Arbiol J, Scappucci G, Katsaros G. Enhancement of
proximity induced superconductivity in planar Germanium. arXiv, 2012.00322.
mla: Aggarwal, Kushagra, et al. “Enhancement of Proximity Induced Superconductivity
in Planar Germanium.” ArXiv, 2012.00322.
short: K. Aggarwal, A.C. Hofmann, D. Jirovec, I. Prieto Gonzalez, A. Sammak, M.
Botifoll, S. Marti-Sanchez, M. Veldhorst, J. Arbiol, G. Scappucci, G. Katsaros,
ArXiv (n.d.).
date_created: 2020-12-02T10:42:53Z
date_published: 2020-12-02T00:00:00Z
date_updated: 2024-03-28T23:30:27Z
day: '02'
ddc:
- '530'
department:
- _id: GeKa
ec_funded: 1
external_id:
arxiv:
- '2012.00322'
file:
- access_level: open_access
checksum: 22a612e206232fa94b138b2c2f957582
content_type: application/pdf
creator: gkatsaro
date_created: 2020-12-02T10:42:31Z
date_updated: 2020-12-02T10:42:31Z
file_id: '8832'
file_name: Superconducting_2D_Ge.pdf
file_size: 1697939
relation: main_file
file_date_updated: 2020-12-02T10:42:31Z
has_accepted_license: '1'
language:
- iso: eng
month: '12'
oa: 1
oa_version: Submitted Version
project:
- _id: 262116AA-B435-11E9-9278-68D0E5697425
name: Hybrid Semiconductor - Superconductor Quantum Devices
- _id: 26A151DA-B435-11E9-9278-68D0E5697425
call_identifier: H2020
grant_number: '844511'
name: Majorana bound states in Ge/SiGe heterostructures
- _id: 237E5020-32DE-11EA-91FC-C7463DDC885E
call_identifier: H2020
grant_number: '862046'
name: TOPOLOGICALLY PROTECTED AND SCALABLE QUANTUM BITS
publication: arXiv
publication_status: submitted
related_material:
record:
- id: '10559'
relation: later_version
status: public
- id: '8834'
relation: research_data
status: public
- id: '10058'
relation: dissertation_contains
status: public
status: public
title: Enhancement of proximity induced superconductivity in planar Germanium
type: preprint
user_id: 2DF688A6-F248-11E8-B48F-1D18A9856A87
year: '2020'
...
---
_id: '10065'
abstract:
- lang: eng
text: We study double quantum dots in a Ge/SiGe heterostructure and test their maturity
towards singlet-triplet ($S-T_0$) qubits. We demonstrate a large range of tunability,
from two single quantum dots to a double quantum dot. We measure Pauli spin blockade
and study the anisotropy of the $g$-factor. We use an adjacent quantum dot for
sensing charge transitions in the double quantum dot at interest. In conclusion,
Ge/SiGe possesses all ingredients necessary for building a singlet-triplet qubit.
acknowledged_ssus:
- _id: M-Shop
- _id: NanoFab
acknowledgement: "We thank Matthias Brauns for helpful discussions and careful proofreading
of the manuscript. This project has received funding from the European Union’s Horizon
2020 research and innovation program under the Marie Sklodowska-Curie grant agreement
No 844511 and from the FWF project P30207. The research was supported by the Scientific
Service Units of IST Austria through resources provided by the MIBA machine shop
and the nanofabrication\r\nfacility."
article_number: '1910.05841'
article_processing_charge: No
author:
- first_name: Andrea C
full_name: Hofmann, Andrea C
id: 340F461A-F248-11E8-B48F-1D18A9856A87
last_name: Hofmann
- first_name: Daniel
full_name: Jirovec, Daniel
id: 4C473F58-F248-11E8-B48F-1D18A9856A87
last_name: Jirovec
orcid: 0000-0002-7197-4801
- first_name: Maxim
full_name: Borovkov, Maxim
last_name: Borovkov
- first_name: Ivan
full_name: Prieto Gonzalez, Ivan
id: 2A307FE2-F248-11E8-B48F-1D18A9856A87
last_name: Prieto Gonzalez
orcid: 0000-0002-7370-5357
- first_name: Andrea
full_name: Ballabio, Andrea
last_name: Ballabio
- first_name: Jacopo
full_name: Frigerio, Jacopo
last_name: Frigerio
- first_name: Daniel
full_name: Chrastina, Daniel
last_name: Chrastina
- first_name: Giovanni
full_name: Isella, Giovanni
last_name: Isella
- first_name: Georgios
full_name: Katsaros, Georgios
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
orcid: 0000-0001-8342-202X
citation:
ama: Hofmann AC, Jirovec D, Borovkov M, et al. Assessing the potential of Ge/SiGe
quantum dots as hosts for singlet-triplet qubits. arXiv. doi:10.48550/arXiv.1910.05841
apa: Hofmann, A. C., Jirovec, D., Borovkov, M., Prieto Gonzalez, I., Ballabio, A.,
Frigerio, J., … Katsaros, G. (n.d.). Assessing the potential of Ge/SiGe quantum
dots as hosts for singlet-triplet qubits. arXiv. https://doi.org/10.48550/arXiv.1910.05841
chicago: Hofmann, Andrea C, Daniel Jirovec, Maxim Borovkov, Ivan Prieto Gonzalez,
Andrea Ballabio, Jacopo Frigerio, Daniel Chrastina, Giovanni Isella, and Georgios
Katsaros. “Assessing the Potential of Ge/SiGe Quantum Dots as Hosts for Singlet-Triplet
Qubits.” ArXiv, n.d. https://doi.org/10.48550/arXiv.1910.05841.
ieee: A. C. Hofmann et al., “Assessing the potential of Ge/SiGe quantum dots
as hosts for singlet-triplet qubits,” arXiv. .
ista: Hofmann AC, Jirovec D, Borovkov M, Prieto Gonzalez I, Ballabio A, Frigerio
J, Chrastina D, Isella G, Katsaros G. Assessing the potential of Ge/SiGe quantum
dots as hosts for singlet-triplet qubits. arXiv, 1910.05841.
mla: Hofmann, Andrea C., et al. “Assessing the Potential of Ge/SiGe Quantum Dots
as Hosts for Singlet-Triplet Qubits.” ArXiv, 1910.05841, doi:10.48550/arXiv.1910.05841.
short: A.C. Hofmann, D. Jirovec, M. Borovkov, I. Prieto Gonzalez, A. Ballabio, J.
Frigerio, D. Chrastina, G. Isella, G. Katsaros, ArXiv (n.d.).
date_created: 2021-10-01T12:14:51Z
date_published: 2019-10-13T00:00:00Z
date_updated: 2024-03-28T23:30:27Z
day: '13'
department:
- _id: GeKa
doi: 10.48550/arXiv.1910.05841
ec_funded: 1
external_id:
arxiv:
- '1910.05841'
language:
- iso: eng
main_file_link:
- open_access: '1'
url: https://arxiv.org/abs/1910.05841
month: '10'
oa: 1
oa_version: Preprint
project:
- _id: 26A151DA-B435-11E9-9278-68D0E5697425
call_identifier: H2020
grant_number: '844511'
name: Majorana bound states in Ge/SiGe heterostructures
- _id: 2641CE5E-B435-11E9-9278-68D0E5697425
call_identifier: FWF
grant_number: P30207
name: Hole spin orbit qubits in Ge quantum wells
publication: arXiv
publication_status: submitted
related_material:
record:
- id: '10058'
relation: dissertation_contains
status: public
status: public
title: Assessing the potential of Ge/SiGe quantum dots as hosts for singlet-triplet
qubits
type: preprint
user_id: 2DF688A6-F248-11E8-B48F-1D18A9856A87
year: '2019'
...
---
_id: '77'
abstract:
- lang: eng
text: Holes confined in quantum dots have gained considerable interest in the past
few years due to their potential as spin qubits. Here we demonstrate two-axis
control of a spin 3/2 qubit in natural Ge. The qubit is formed in a hut wire double
quantum dot device. The Pauli spin blockade principle allowed us to demonstrate
electric dipole spin resonance by applying a radio frequency electric field to
one of the electrodes defining the double quantum dot. Coherent hole spin oscillations
with Rabi frequencies reaching 140 MHz are demonstrated and dephasing times of
130 ns are measured. The reported results emphasize the potential of Ge as a platform
for fast and electrically tunable hole spin qubit devices.
acknowledged_ssus:
- _id: M-Shop
- _id: NanoFab
article_processing_charge: Yes
article_type: original
author:
- first_name: Hannes
full_name: Watzinger, Hannes
id: 35DF8E50-F248-11E8-B48F-1D18A9856A87
last_name: Watzinger
- first_name: Josip
full_name: Kukucka, Josip
id: 3F5D8856-F248-11E8-B48F-1D18A9856A87
last_name: Kukucka
- first_name: Lada
full_name: Vukusic, Lada
id: 31E9F056-F248-11E8-B48F-1D18A9856A87
last_name: Vukusic
orcid: 0000-0003-2424-8636
- first_name: Fei
full_name: Gao, Fei
last_name: Gao
- first_name: Ting
full_name: Wang, Ting
last_name: Wang
- first_name: Friedrich
full_name: Schäffler, Friedrich
last_name: Schäffler
- first_name: Jian
full_name: Zhang, Jian
last_name: Zhang
- first_name: Georgios
full_name: Katsaros, Georgios
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
orcid: 0000-0001-8342-202X
citation:
ama: Watzinger H, Kukucka J, Vukušić L, et al. A germanium hole spin qubit. Nature
Communications. 2018;9(3902). doi:10.1038/s41467-018-06418-4
apa: Watzinger, H., Kukucka, J., Vukušić, L., Gao, F., Wang, T., Schäffler, F.,
… Katsaros, G. (2018). A germanium hole spin qubit. Nature Communications.
Nature Publishing Group. https://doi.org/10.1038/s41467-018-06418-4
chicago: Watzinger, Hannes, Josip Kukucka, Lada Vukušić, Fei Gao, Ting Wang, Friedrich
Schäffler, Jian Zhang, and Georgios Katsaros. “A Germanium Hole Spin Qubit.” Nature
Communications. Nature Publishing Group, 2018. https://doi.org/10.1038/s41467-018-06418-4.
ieee: H. Watzinger et al., “A germanium hole spin qubit,” Nature Communications,
vol. 9, no. 3902. Nature Publishing Group, 2018.
ista: Watzinger H, Kukucka J, Vukušić L, Gao F, Wang T, Schäffler F, Zhang J, Katsaros
G. 2018. A germanium hole spin qubit. Nature Communications. 9(3902).
mla: Watzinger, Hannes, et al. “A Germanium Hole Spin Qubit.” Nature Communications,
vol. 9, no. 3902, Nature Publishing Group, 2018, doi:10.1038/s41467-018-06418-4.
short: H. Watzinger, J. Kukucka, L. Vukušić, F. Gao, T. Wang, F. Schäffler, J. Zhang,
G. Katsaros, Nature Communications 9 (2018).
date_created: 2018-12-11T11:44:30Z
date_published: 2018-09-25T00:00:00Z
date_updated: 2023-09-08T11:44:02Z
day: '25'
ddc:
- '530'
department:
- _id: GeKa
doi: 10.1038/s41467-018-06418-4
ec_funded: 1
external_id:
isi:
- '000445560800010'
file:
- access_level: open_access
checksum: e7148c10a64497e279c4de570b6cc544
content_type: application/pdf
creator: dernst
date_created: 2018-12-17T10:28:30Z
date_updated: 2020-07-14T12:48:02Z
file_id: '5687'
file_name: 2018_NatureComm_Watzinger.pdf
file_size: 1063469
relation: main_file
file_date_updated: 2020-07-14T12:48:02Z
has_accepted_license: '1'
intvolume: ' 9'
isi: 1
issue: '3902 '
language:
- iso: eng
month: '09'
oa: 1
oa_version: Published Version
project:
- _id: 25517E86-B435-11E9-9278-68D0E5697425
call_identifier: FP7
grant_number: '335497'
name: Towards Spin qubits and Majorana fermions in Germanium selfassembled hut-wires
- _id: 2552F888-B435-11E9-9278-68D0E5697425
call_identifier: FWF
grant_number: Y00715
name: Loch Spin-Qubits und Majorana-Fermionen in Germanium
publication: Nature Communications
publication_status: published
publisher: Nature Publishing Group
quality_controlled: '1'
related_material:
record:
- id: '7977'
relation: popular_science
- id: '7996'
relation: dissertation_contains
status: public
scopus_import: '1'
status: public
title: A germanium hole spin qubit
tmp:
image: /images/cc_by.png
legal_code_url: https://creativecommons.org/licenses/by/4.0/legalcode
name: Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)
short: CC BY (4.0)
type: journal_article
user_id: c635000d-4b10-11ee-a964-aac5a93f6ac1
volume: 9
year: '2018'
...
---
_id: '23'
abstract:
- lang: eng
text: The strong atomistic spin–orbit coupling of holes makes single-shot spin readout
measurements difficult because it reduces the spin lifetimes. By integrating the
charge sensor into a high bandwidth radio frequency reflectometry setup, we were
able to demonstrate single-shot readout of a germanium quantum dot hole spin and
measure the spin lifetime. Hole spin relaxation times of about 90 μs at 500 mT
are reported, with a total readout visibility of about 70%. By analyzing separately
the spin-to-charge conversion and charge readout fidelities, we have obtained
insight into the processes limiting the visibilities of hole spins. The analyses
suggest that high hole visibilities are feasible at realistic experimental conditions,
underlying the potential of hole spins for the realization of viable qubit devices.
acknowledged_ssus:
- _id: M-Shop
- _id: NanoFab
article_processing_charge: No
author:
- first_name: Lada
full_name: Vukušić, Lada
id: 31E9F056-F248-11E8-B48F-1D18A9856A87
last_name: Vukušić
orcid: 0000-0003-2424-8636
- first_name: Josip
full_name: Kukucka, Josip
id: 3F5D8856-F248-11E8-B48F-1D18A9856A87
last_name: Kukucka
- first_name: Hannes
full_name: Watzinger, Hannes
id: 35DF8E50-F248-11E8-B48F-1D18A9856A87
last_name: Watzinger
- first_name: Joshua M
full_name: Milem, Joshua M
id: 4CDE0A96-F248-11E8-B48F-1D18A9856A87
last_name: Milem
- first_name: Friedrich
full_name: Schäffler, Friedrich
last_name: Schäffler
- first_name: Georgios
full_name: Katsaros, Georgios
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
orcid: 0000-0001-8342-202X
citation:
ama: Vukušić L, Kukucka J, Watzinger H, Milem JM, Schäffler F, Katsaros G. Single-shot
readout of hole spins in Ge. Nano Letters. 2018;18(11):7141-7145. doi:10.1021/acs.nanolett.8b03217
apa: Vukušić, L., Kukucka, J., Watzinger, H., Milem, J. M., Schäffler, F., &
Katsaros, G. (2018). Single-shot readout of hole spins in Ge. Nano Letters.
American Chemical Society. https://doi.org/10.1021/acs.nanolett.8b03217
chicago: Vukušić, Lada, Josip Kukucka, Hannes Watzinger, Joshua M Milem, Friedrich
Schäffler, and Georgios Katsaros. “Single-Shot Readout of Hole Spins in Ge.” Nano
Letters. American Chemical Society, 2018. https://doi.org/10.1021/acs.nanolett.8b03217.
ieee: L. Vukušić, J. Kukucka, H. Watzinger, J. M. Milem, F. Schäffler, and G. Katsaros,
“Single-shot readout of hole spins in Ge,” Nano Letters, vol. 18, no. 11.
American Chemical Society, pp. 7141–7145, 2018.
ista: Vukušić L, Kukucka J, Watzinger H, Milem JM, Schäffler F, Katsaros G. 2018.
Single-shot readout of hole spins in Ge. Nano Letters. 18(11), 7141–7145.
mla: Vukušić, Lada, et al. “Single-Shot Readout of Hole Spins in Ge.” Nano Letters,
vol. 18, no. 11, American Chemical Society, 2018, pp. 7141–45, doi:10.1021/acs.nanolett.8b03217.
short: L. Vukušić, J. Kukucka, H. Watzinger, J.M. Milem, F. Schäffler, G. Katsaros,
Nano Letters 18 (2018) 7141–7145.
date_created: 2018-12-11T11:44:13Z
date_published: 2018-10-25T00:00:00Z
date_updated: 2023-09-18T09:30:37Z
day: '25'
ddc:
- '530'
department:
- _id: GeKa
doi: 10.1021/acs.nanolett.8b03217
ec_funded: 1
external_id:
isi:
- '000451102100064'
pmid:
- '30359041'
file:
- access_level: open_access
checksum: 3e6034a94c6b5335e939145d88bdb371
content_type: application/pdf
creator: system
date_created: 2018-12-12T10:16:08Z
date_updated: 2020-07-14T12:45:37Z
file_id: '5194'
file_name: IST-2018-1065-v1+1_ACS_nanoletters_8b03217.pdf
file_size: 1361441
relation: main_file
file_date_updated: 2020-07-14T12:45:37Z
has_accepted_license: '1'
intvolume: ' 18'
isi: 1
issue: '11'
language:
- iso: eng
month: '10'
oa: 1
oa_version: Published Version
page: 7141 - 7145
pmid: 1
project:
- _id: 25517E86-B435-11E9-9278-68D0E5697425
call_identifier: FP7
grant_number: '335497'
name: Towards Spin qubits and Majorana fermions in Germanium selfassembled hut-wires
publication: Nano Letters
publication_identifier:
issn:
- '15306984'
publication_status: published
publisher: American Chemical Society
publist_id: '8032'
pubrep_id: '1065'
quality_controlled: '1'
related_material:
record:
- id: '7977'
relation: popular_science
- id: '69'
relation: dissertation_contains
status: public
- id: '7996'
relation: dissertation_contains
status: public
scopus_import: '1'
status: public
title: Single-shot readout of hole spins in Ge
tmp:
image: /images/cc_by.png
legal_code_url: https://creativecommons.org/licenses/by/4.0/legalcode
name: Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)
short: CC BY (4.0)
type: journal_article
user_id: c635000d-4b10-11ee-a964-aac5a93f6ac1
volume: 18
year: '2018'
...
---
_id: '840'
abstract:
- lang: eng
text: Heavy holes confined in quantum dots are predicted to be promising candidates
for the realization of spin qubits with long coherence times. Here we focus on
such heavy-hole states confined in germanium hut wires. By tuning the growth density
of the latter we can realize a T-like structure between two neighboring wires.
Such a structure allows the realization of a charge sensor, which is electrostatically
and tunnel coupled to a quantum dot, with charge-transfer signals as high as 0.3
e. By integrating the T-like structure into a radiofrequency reflectometry setup,
single-shot measurements allowing the extraction of hole tunneling times are performed.
The extracted tunneling times of less than 10 μs are attributed to the small effective
mass of Ge heavy-hole states and pave the way toward projective spin readout measurements.
acknowledged_ssus:
- _id: M-Shop
article_processing_charge: No
author:
- first_name: Lada
full_name: Vukusic, Lada
id: 31E9F056-F248-11E8-B48F-1D18A9856A87
last_name: Vukusic
orcid: 0000-0003-2424-8636
- first_name: Josip
full_name: Kukucka, Josip
id: 3F5D8856-F248-11E8-B48F-1D18A9856A87
last_name: Kukucka
- first_name: Hannes
full_name: Watzinger, Hannes
id: 35DF8E50-F248-11E8-B48F-1D18A9856A87
last_name: Watzinger
- first_name: Georgios
full_name: Katsaros, Georgios
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
orcid: 0000-0001-8342-202X
citation:
ama: Vukušić L, Kukucka J, Watzinger H, Katsaros G. Fast hole tunneling times in
germanium hut wires probed by single-shot reflectometry. Nano Letters.
2017;17(9):5706-5710. doi:10.1021/acs.nanolett.7b02627
apa: Vukušić, L., Kukucka, J., Watzinger, H., & Katsaros, G. (2017). Fast hole
tunneling times in germanium hut wires probed by single-shot reflectometry. Nano
Letters. American Chemical Society. https://doi.org/10.1021/acs.nanolett.7b02627
chicago: Vukušić, Lada, Josip Kukucka, Hannes Watzinger, and Georgios Katsaros.
“Fast Hole Tunneling Times in Germanium Hut Wires Probed by Single-Shot Reflectometry.”
Nano Letters. American Chemical Society, 2017. https://doi.org/10.1021/acs.nanolett.7b02627.
ieee: L. Vukušić, J. Kukucka, H. Watzinger, and G. Katsaros, “Fast hole tunneling
times in germanium hut wires probed by single-shot reflectometry,” Nano Letters,
vol. 17, no. 9. American Chemical Society, pp. 5706–5710, 2017.
ista: Vukušić L, Kukucka J, Watzinger H, Katsaros G. 2017. Fast hole tunneling times
in germanium hut wires probed by single-shot reflectometry. Nano Letters. 17(9),
5706–5710.
mla: Vukušić, Lada, et al. “Fast Hole Tunneling Times in Germanium Hut Wires Probed
by Single-Shot Reflectometry.” Nano Letters, vol. 17, no. 9, American Chemical
Society, 2017, pp. 5706–10, doi:10.1021/acs.nanolett.7b02627.
short: L. Vukušić, J. Kukucka, H. Watzinger, G. Katsaros, Nano Letters 17 (2017)
5706–5710.
date_created: 2018-12-11T11:48:47Z
date_published: 2017-08-10T00:00:00Z
date_updated: 2023-09-26T15:50:22Z
day: '10'
ddc:
- '539'
department:
- _id: GeKa
doi: 10.1021/acs.nanolett.7b02627
ec_funded: 1
external_id:
isi:
- '000411043500078'
file:
- access_level: open_access
checksum: 761371a0129b2aa442424b9561450ece
content_type: application/pdf
creator: system
date_created: 2018-12-12T10:12:33Z
date_updated: 2020-07-14T12:48:13Z
file_id: '4951'
file_name: IST-2017-865-v1+1_acs.nanolett.7b02627.pdf
file_size: 2449546
relation: main_file
file_date_updated: 2020-07-14T12:48:13Z
has_accepted_license: '1'
intvolume: ' 17'
isi: 1
issue: '9'
language:
- iso: eng
month: '08'
oa: 1
oa_version: Published Version
page: 5706 - 5710
project:
- _id: 25517E86-B435-11E9-9278-68D0E5697425
call_identifier: FP7
grant_number: '335497'
name: Towards Spin qubits and Majorana fermions in Germanium selfassembled hut-wires
publication: Nano Letters
publication_identifier:
issn:
- '15306984'
publication_status: published
publisher: American Chemical Society
publist_id: '6808'
pubrep_id: '865'
quality_controlled: '1'
related_material:
record:
- id: '7977'
relation: popular_science
- id: '69'
relation: dissertation_contains
status: public
- id: '7996'
relation: dissertation_contains
status: public
scopus_import: '1'
status: public
title: Fast hole tunneling times in germanium hut wires probed by single-shot reflectometry
tmp:
image: /images/cc_by.png
legal_code_url: https://creativecommons.org/licenses/by/4.0/legalcode
name: Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)
short: CC BY (4.0)
type: journal_article
user_id: c635000d-4b10-11ee-a964-aac5a93f6ac1
volume: 17
year: '2017'
...
---
_id: '1328'
abstract:
- lang: eng
text: Hole spins have gained considerable interest in the past few years due to
their potential for fast electrically controlled qubits. Here, we study holes
confined in Ge hut wires, a so-far unexplored type of nanostructure. Low-temperature
magnetotransport measurements reveal a large anisotropy between the in-plane and
out-of-plane g-factors of up to 18. Numerical simulations verify that this large
anisotropy originates from a confined wave function of heavy-hole character. A
light-hole admixture of less than 1% is estimated for the states of lowest energy,
leading to a surprisingly large reduction of the out-of-plane g-factors compared
with those for pure heavy holes. Given this tiny light-hole contribution, the
spin lifetimes are expected to be very long, even in isotopically nonpurified
samples.
acknowledgement: 'The work was supported by the EC FP7 ICT project SiSPIN no. 323841,
the EC FP7 ICT project PAMS no. 610446, the ERC Starting Grant no. 335497, the FWF-I-1190-N20
project, and the Swiss NSF. We acknowledge F. Schäffler for fruitful discussions
related to the hut wire growth and for giving us access to the molecular beam epitaxy
system, M. Schatzl for her support in electron beam lithography, and V. Jadris ̌ko
for helping us with the COMSOL simulations. Finally, we thank G. Bauer for his continuous
support. '
author:
- first_name: Hannes
full_name: Watzinger, Hannes
id: 35DF8E50-F248-11E8-B48F-1D18A9856A87
last_name: Watzinger
- first_name: Christoph
full_name: Kloeffel, Christoph
last_name: Kloeffel
- first_name: Lada
full_name: Vukusic, Lada
id: 31E9F056-F248-11E8-B48F-1D18A9856A87
last_name: Vukusic
orcid: 0000-0003-2424-8636
- first_name: Marta
full_name: Rossell, Marta
last_name: Rossell
- first_name: Violetta
full_name: Sessi, Violetta
last_name: Sessi
- first_name: Josip
full_name: Kukucka, Josip
id: 3F5D8856-F248-11E8-B48F-1D18A9856A87
last_name: Kukucka
- first_name: Raimund
full_name: Kirchschlager, Raimund
last_name: Kirchschlager
- first_name: Elisabeth
full_name: Lausecker, Elisabeth
id: 33662F76-F248-11E8-B48F-1D18A9856A87
last_name: Lausecker
- first_name: Alisha
full_name: Truhlar, Alisha
id: 49CBC780-F248-11E8-B48F-1D18A9856A87
last_name: Truhlar
- first_name: Martin
full_name: Glaser, Martin
last_name: Glaser
- first_name: Armando
full_name: Rastelli, Armando
last_name: Rastelli
- first_name: Andreas
full_name: Fuhrer, Andreas
last_name: Fuhrer
- first_name: Daniel
full_name: Loss, Daniel
last_name: Loss
- first_name: Georgios
full_name: Katsaros, Georgios
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
orcid: 0000-0001-8342-202X
citation:
ama: Watzinger H, Kloeffel C, Vukušić L, et al. Heavy-hole states in germanium hut
wires. Nano Letters. 2016;16(11):6879-6885. doi:10.1021/acs.nanolett.6b02715
apa: Watzinger, H., Kloeffel, C., Vukušić, L., Rossell, M., Sessi, V., Kukucka,
J., … Katsaros, G. (2016). Heavy-hole states in germanium hut wires. Nano Letters.
American Chemical Society. https://doi.org/10.1021/acs.nanolett.6b02715
chicago: Watzinger, Hannes, Christoph Kloeffel, Lada Vukušić, Marta Rossell, Violetta
Sessi, Josip Kukucka, Raimund Kirchschlager, et al. “Heavy-Hole States in Germanium
Hut Wires.” Nano Letters. American Chemical Society, 2016. https://doi.org/10.1021/acs.nanolett.6b02715.
ieee: H. Watzinger et al., “Heavy-hole states in germanium hut wires,” Nano
Letters, vol. 16, no. 11. American Chemical Society, pp. 6879–6885, 2016.
ista: Watzinger H, Kloeffel C, Vukušić L, Rossell M, Sessi V, Kukucka J, Kirchschlager
R, Lausecker E, Truhlar A, Glaser M, Rastelli A, Fuhrer A, Loss D, Katsaros G.
2016. Heavy-hole states in germanium hut wires. Nano Letters. 16(11), 6879–6885.
mla: Watzinger, Hannes, et al. “Heavy-Hole States in Germanium Hut Wires.” Nano
Letters, vol. 16, no. 11, American Chemical Society, 2016, pp. 6879–85, doi:10.1021/acs.nanolett.6b02715.
short: H. Watzinger, C. Kloeffel, L. Vukušić, M. Rossell, V. Sessi, J. Kukucka,
R. Kirchschlager, E. Lausecker, A. Truhlar, M. Glaser, A. Rastelli, A. Fuhrer,
D. Loss, G. Katsaros, Nano Letters 16 (2016) 6879–6885.
date_created: 2018-12-11T11:51:24Z
date_published: 2016-09-22T00:00:00Z
date_updated: 2023-09-07T13:15:02Z
day: '22'
ddc:
- '539'
department:
- _id: GeKa
doi: 10.1021/acs.nanolett.6b02715
ec_funded: 1
file:
- access_level: open_access
checksum: b63feece90d7b620ece49ca632e34ff3
content_type: application/pdf
creator: system
date_created: 2018-12-12T10:14:04Z
date_updated: 2020-07-14T12:44:44Z
file_id: '5053'
file_name: IST-2016-664-v1+1_acs.nanolett.6b02715.pdf
file_size: 535121
relation: main_file
file_date_updated: 2020-07-14T12:44:44Z
has_accepted_license: '1'
intvolume: ' 16'
issue: '11'
language:
- iso: eng
month: '09'
oa: 1
oa_version: Published Version
page: 6879 - 6885
project:
- _id: 25517E86-B435-11E9-9278-68D0E5697425
call_identifier: FP7
grant_number: '335497'
name: Towards Spin qubits and Majorana fermions in Germanium selfassembled hut-wires
publication: Nano Letters
publication_status: published
publisher: American Chemical Society
publist_id: '5941'
pubrep_id: '664'
quality_controlled: '1'
related_material:
record:
- id: '7977'
relation: popular_science
status: for_moderation
- id: '7996'
relation: dissertation_contains
status: public
scopus_import: 1
status: public
title: Heavy-hole states in germanium hut wires
tmp:
image: /images/cc_by.png
legal_code_url: https://creativecommons.org/licenses/by/4.0/legalcode
name: Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)
short: CC BY (4.0)
type: journal_article
user_id: 3E5EF7F0-F248-11E8-B48F-1D18A9856A87
volume: 16
year: '2016'
...
---
_id: '1761'
abstract:
- lang: eng
text: Metal silicides formed by means of thermal annealing processes are employed
as contact materials in microelectronics. Control of the structure of silicide/silicon
interfaces becomes a critical issue when the characteristic size of the device
is reduced below a few tens of nanometers. Here, we report on silicide clustering
occurring within the channel of PtSi/Si/PtSi Schottky-barrier transistors. This
phenomenon is investigated through atomistic simulations and low-temperature resonant-tunneling
spectroscopy. Our results provide evidence for the segregation of a PtSi cluster
with a diameter of a few nanometers from the silicide contact. The cluster acts
as a metallic quantum dot giving rise to distinct signatures of quantum transport
through its discrete energy states.
acknowledgement: This work was supported by the Agence Nationale de la Recherche and
by the EU through the ERC Starting Grant HybridNano
author:
- first_name: Massimo
full_name: Mongillo, Massimo
last_name: Mongillo
- first_name: Panayotis
full_name: Spathis, Panayotis N
last_name: Spathis
- first_name: Georgios
full_name: Georgios Katsaros
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
- first_name: Silvano
full_name: De Franceschi, Silvano
last_name: De Franceschi
- first_name: Pascal
full_name: Gentile, Pascal
last_name: Gentile
- first_name: Riccardo
full_name: Rurali, Riccardo
last_name: Rurali
- first_name: Xavier
full_name: Cartoixà, Xavier
last_name: Cartoixà
citation:
ama: Mongillo M, Spathis P, Katsaros G, et al. PtSi clustering in silicon probed
by transport spectroscopy. Physical Review X. 2014;3(4). doi:10.1103/PhysRevX.3.041025
apa: Mongillo, M., Spathis, P., Katsaros, G., De Franceschi, S., Gentile, P., Rurali,
R., & Cartoixà, X. (2014). PtSi clustering in silicon probed by transport
spectroscopy. Physical Review X. American Physical Society. https://doi.org/10.1103/PhysRevX.3.041025
chicago: Mongillo, Massimo, Panayotis Spathis, Georgios Katsaros, Silvano De Franceschi,
Pascal Gentile, Riccardo Rurali, and Xavier Cartoixà. “PtSi Clustering in Silicon
Probed by Transport Spectroscopy.” Physical Review X. American Physical
Society, 2014. https://doi.org/10.1103/PhysRevX.3.041025.
ieee: M. Mongillo et al., “PtSi clustering in silicon probed by transport
spectroscopy,” Physical Review X, vol. 3, no. 4. American Physical Society,
2014.
ista: Mongillo M, Spathis P, Katsaros G, De Franceschi S, Gentile P, Rurali R, Cartoixà
X. 2014. PtSi clustering in silicon probed by transport spectroscopy. Physical
Review X. 3(4).
mla: Mongillo, Massimo, et al. “PtSi Clustering in Silicon Probed by Transport Spectroscopy.”
Physical Review X, vol. 3, no. 4, American Physical Society, 2014, doi:10.1103/PhysRevX.3.041025.
short: M. Mongillo, P. Spathis, G. Katsaros, S. De Franceschi, P. Gentile, R. Rurali,
X. Cartoixà, Physical Review X 3 (2014).
date_created: 2018-12-11T11:53:52Z
date_published: 2014-01-01T00:00:00Z
date_updated: 2021-01-12T06:53:02Z
day: '01'
doi: 10.1103/PhysRevX.3.041025
extern: 1
intvolume: ' 3'
issue: '4'
main_file_link:
- open_access: '1'
url: http://arxiv.org/abs/1407.5413
month: '01'
oa: 1
publication: Physical Review X
publication_status: published
publisher: American Physical Society
publist_id: '5363'
quality_controlled: 0
status: public
title: PtSi clustering in silicon probed by transport spectroscopy
type: journal_article
volume: 3
year: '2014'
...
---
_id: '1760'
abstract:
- lang: eng
text: We report on hole g-factor measurements in three terminal SiGe self-assembled
quantum dot devices with a top gate electrode positioned very close to the nanostructure.
Measurements of both the perpendicular as well as the parallel g-factor reveal
significant changes for a small modulation of the top gate voltage. From the observed
modulations, we estimate that, for realistic experimental conditions, hole spins
can be electrically manipulated with Rabi frequencies in the order of 100 MHz.
This work emphasises the potential of hole-based nano-devices for efficient spin
manipulation by means of the g-tensor modulation technique.
acknowledgement: We acknowledge the financial support from the Nanosciences Foundation
(Grenoble, France), the Commission for a Marie Curie Carrer Integration Grant, the
Austrian Science Fund (FWF) for a Lise-Meitner Fellowship (M1435-N30), the DOE under
Contract No. DE-FG02-08ER46482 (Yale), the European Starting Grant program, and
the Agence Nationale de la Recherche
author:
- first_name: Natalia
full_name: Ares, Natalia
last_name: Ares
- first_name: Georgios
full_name: Georgios Katsaros
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
- first_name: Vitaly
full_name: Golovach, Vitaly N
last_name: Golovach
- first_name: Jianjun
full_name: Zhang, Jianjun
last_name: Zhang
- first_name: Aaron
full_name: Prager, Aaron A
last_name: Prager
- first_name: Leonid
full_name: Glazman, Leonid I
last_name: Glazman
- first_name: Oliver
full_name: Schmidt, Oliver G
last_name: Schmidt
- first_name: Silvano
full_name: De Franceschi, Silvano
last_name: De Franceschi
citation:
ama: Ares N, Katsaros G, Golovach V, et al. SiGe quantum dots for fast hole spin
Rabi oscillations. Applied Physics Letters. 2013;103(26). doi:10.1063/1.4858959
apa: Ares, N., Katsaros, G., Golovach, V., Zhang, J., Prager, A., Glazman, L., …
De Franceschi, S. (2013). SiGe quantum dots for fast hole spin Rabi oscillations.
Applied Physics Letters. American Institute of Physics. https://doi.org/10.1063/1.4858959
chicago: Ares, Natalia, Georgios Katsaros, Vitaly Golovach, Jianjun Zhang, Aaron
Prager, Leonid Glazman, Oliver Schmidt, and Silvano De Franceschi. “SiGe Quantum
Dots for Fast Hole Spin Rabi Oscillations.” Applied Physics Letters. American
Institute of Physics, 2013. https://doi.org/10.1063/1.4858959.
ieee: N. Ares et al., “SiGe quantum dots for fast hole spin Rabi oscillations,”
Applied Physics Letters, vol. 103, no. 26. American Institute of Physics,
2013.
ista: Ares N, Katsaros G, Golovach V, Zhang J, Prager A, Glazman L, Schmidt O, De
Franceschi S. 2013. SiGe quantum dots for fast hole spin Rabi oscillations. Applied
Physics Letters. 103(26).
mla: Ares, Natalia, et al. “SiGe Quantum Dots for Fast Hole Spin Rabi Oscillations.”
Applied Physics Letters, vol. 103, no. 26, American Institute of Physics,
2013, doi:10.1063/1.4858959.
short: N. Ares, G. Katsaros, V. Golovach, J. Zhang, A. Prager, L. Glazman, O. Schmidt,
S. De Franceschi, Applied Physics Letters 103 (2013).
date_created: 2018-12-11T11:53:52Z
date_published: 2013-01-23T00:00:00Z
date_updated: 2021-01-12T06:53:02Z
day: '23'
doi: 10.1063/1.4858959
extern: 1
intvolume: ' 103'
issue: '26'
main_file_link:
- open_access: '1'
url: http://arxiv.org/abs/1307.7196
month: '01'
oa: 1
publication: Applied Physics Letters
publication_status: published
publisher: American Institute of Physics
publist_id: '5364'
quality_controlled: 0
status: public
title: SiGe quantum dots for fast hole spin Rabi oscillations
type: journal_article
volume: 103
year: '2013'
...
---
_id: '1759'
abstract:
- lang: eng
text: We report an electric-field-induced giant modulation of the hole g factor
in SiGe nanocrystals. The observed effect is ascribed to a so-far overlooked contribution
to the g factor that stems from the mixing between heavy- and light-hole wave
functions. We show that the relative displacement between the confined heavy-
and light-hole states, occurring upon application of the electric field, alters
their mixing strength leading to a strong nonmonotonic modulation of the g factor.
acknowledgement: We acknowledge financial support from the Nanosciences Foundation
(Grenoble, France), DOE under Contract No. DEFG02-08ER46482 (Yale), the Agence Nationale
de la Recherche, and the European Starting Grant. G. K. acknowledges support from
the European Commission via a Marie Curie Carrer Integration Grant and the FWF for
a Lise-Meitner Fellowship
author:
- first_name: Natalia
full_name: Ares, Natalia
last_name: Ares
- first_name: Vitaly
full_name: Golovach, Vitaly N
last_name: Golovach
- first_name: Georgios
full_name: Georgios Katsaros
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
- first_name: Mathieu
full_name: Stoffel, Mathieu
last_name: Stoffel
- first_name: Frank
full_name: Fournel, Frank
last_name: Fournel
- first_name: Leonid
full_name: Glazman, Leonid I
last_name: Glazman
- first_name: Oliver
full_name: Schmidt, Oliver G
last_name: Schmidt
- first_name: Silvano
full_name: De Franceschi, Silvano
last_name: De Franceschi
citation:
ama: Ares N, Golovach V, Katsaros G, et al. Nature of tunable hole g factors in
quantum dots. Physical Review Letters. 2013;110(4). doi:10.1103/PhysRevLett.110.046602
apa: Ares, N., Golovach, V., Katsaros, G., Stoffel, M., Fournel, F., Glazman, L.,
… De Franceschi, S. (2013). Nature of tunable hole g factors in quantum dots.
Physical Review Letters. American Physical Society. https://doi.org/10.1103/PhysRevLett.110.046602
chicago: Ares, Natalia, Vitaly Golovach, Georgios Katsaros, Mathieu Stoffel, Frank
Fournel, Leonid Glazman, Oliver Schmidt, and Silvano De Franceschi. “Nature of
Tunable Hole g Factors in Quantum Dots.” Physical Review Letters. American
Physical Society, 2013. https://doi.org/10.1103/PhysRevLett.110.046602.
ieee: N. Ares et al., “Nature of tunable hole g factors in quantum dots,”
Physical Review Letters, vol. 110, no. 4. American Physical Society, 2013.
ista: Ares N, Golovach V, Katsaros G, Stoffel M, Fournel F, Glazman L, Schmidt O,
De Franceschi S. 2013. Nature of tunable hole g factors in quantum dots. Physical
Review Letters. 110(4).
mla: Ares, Natalia, et al. “Nature of Tunable Hole g Factors in Quantum Dots.” Physical
Review Letters, vol. 110, no. 4, American Physical Society, 2013, doi:10.1103/PhysRevLett.110.046602.
short: N. Ares, V. Golovach, G. Katsaros, M. Stoffel, F. Fournel, L. Glazman, O.
Schmidt, S. De Franceschi, Physical Review Letters 110 (2013).
date_created: 2018-12-11T11:53:51Z
date_published: 2013-01-23T00:00:00Z
date_updated: 2021-01-12T06:53:01Z
day: '23'
doi: 10.1103/PhysRevLett.110.046602
extern: 1
intvolume: ' 110'
issue: '4'
main_file_link:
- open_access: '1'
url: http://arxiv.org/abs/1208.0476
month: '01'
oa: 1
publication: Physical Review Letters
publication_status: published
publisher: American Physical Society
publist_id: '5365'
quality_controlled: 0
status: public
title: Nature of tunable hole g factors in quantum dots
type: journal_article
volume: 110
year: '2013'
...
---
_id: '1757'
abstract:
- lang: eng
text: Self-assembled Ge wires with a height of only 3 unit cells and a length of
up to 2 micrometers were grown on Si(001) by means of a catalyst-free method based
on molecular beam epitaxy. The wires grow horizontally along either the [100]
or the [010] direction. On atomically flat surfaces, they exhibit a highly uniform,
triangular cross section. A simple thermodynamic model accounts for the existence
of a preferential base width for longitudinal expansion, in quantitative agreement
with the experimental findings. Despite the absence of intentional doping, the
first transistor-type devices made from single wires show low-resistive electrical
contacts and single-hole transport at sub-Kelvin temperatures. In view of their
exceptionally small and self-defined cross section, these Ge wires hold promise
for the realization of hole systems with exotic properties and provide a new development
route for silicon-based nanoelectronics.
acknowledgement: We acknowledge the financial support by the DFG SPP1386, P. Chen
and D. J. Thurmer for MBE assistance, R. Wacquez for providing the ultrathin SOI
wafers, and G. Bauer, Y. Hu, X. Jehl, S. Kiravittaya, C. Klöffel, E. J. H. Lee,
F. Liu, D. Loss, and S. Mahapatra for helpful discussions. G. K. acknowledges support
from the European commission via a Marie Curie Carrer Integration Grant. S. D. F.
acknowledges support from the European Research Council through the starting grant
program
author:
- first_name: Jianjun
full_name: Zhang, Jianjun
last_name: Zhang
- first_name: Georgios
full_name: Georgios Katsaros
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
- first_name: Francesco
full_name: Montalenti, Francesco
last_name: Montalenti
- first_name: Daniele
full_name: Scopece, Daniele
last_name: Scopece
- first_name: Roman
full_name: Rezaev, Roman O
last_name: Rezaev
- first_name: Christine
full_name: Mickel, Christine H
last_name: Mickel
- first_name: Bernd
full_name: Rellinghaus, Bernd
last_name: Rellinghaus
- first_name: Leo
full_name: Miglio, Leo P
last_name: Miglio
- first_name: Silvano
full_name: De Franceschi, Silvano
last_name: De Franceschi
- first_name: Armando
full_name: Rastelli, Armando
last_name: Rastelli
- first_name: Oliver
full_name: Schmidt, Oliver G
last_name: Schmidt
citation:
ama: Zhang J, Katsaros G, Montalenti F, et al. Monolithic growth of ultrathin Ge
nanowires on Si(001) . Physical Review Letters. 2012;109(8). doi:10.1103/PhysRevLett.109.085502
apa: Zhang, J., Katsaros, G., Montalenti, F., Scopece, D., Rezaev, R., Mickel, C.,
… Schmidt, O. (2012). Monolithic growth of ultrathin Ge nanowires on Si(001) .
Physical Review Letters. American Physical Society. https://doi.org/10.1103/PhysRevLett.109.085502
chicago: Zhang, Jianjun, Georgios Katsaros, Francesco Montalenti, Daniele Scopece,
Roman Rezaev, Christine Mickel, Bernd Rellinghaus, et al. “Monolithic Growth of
Ultrathin Ge Nanowires on Si(001) .” Physical Review Letters. American
Physical Society, 2012. https://doi.org/10.1103/PhysRevLett.109.085502.
ieee: J. Zhang et al., “Monolithic growth of ultrathin Ge nanowires on Si(001)
,” Physical Review Letters, vol. 109, no. 8. American Physical Society,
2012.
ista: Zhang J, Katsaros G, Montalenti F, Scopece D, Rezaev R, Mickel C, Rellinghaus
B, Miglio L, De Franceschi S, Rastelli A, Schmidt O. 2012. Monolithic growth of
ultrathin Ge nanowires on Si(001) . Physical Review Letters. 109(8).
mla: Zhang, Jianjun, et al. “Monolithic Growth of Ultrathin Ge Nanowires on Si(001)
.” Physical Review Letters, vol. 109, no. 8, American Physical Society,
2012, doi:10.1103/PhysRevLett.109.085502.
short: J. Zhang, G. Katsaros, F. Montalenti, D. Scopece, R. Rezaev, C. Mickel, B.
Rellinghaus, L. Miglio, S. De Franceschi, A. Rastelli, O. Schmidt, Physical Review
Letters 109 (2012).
date_created: 2018-12-11T11:53:51Z
date_published: 2012-08-23T00:00:00Z
date_updated: 2021-01-12T06:53:00Z
day: '23'
doi: 10.1103/PhysRevLett.109.085502
extern: 1
intvolume: ' 109'
issue: '8'
main_file_link:
- open_access: '1'
url: http://arxiv.org/abs/1208.0666
month: '08'
oa: 1
publication: Physical Review Letters
publication_status: published
publisher: American Physical Society
publist_id: '5367'
quality_controlled: 0
status: public
title: 'Monolithic growth of ultrathin Ge nanowires on Si(001) '
type: journal_article
volume: 109
year: '2012'
...
---
_id: '1758'
abstract:
- lang: eng
text: We studied the low-energy states of spin-1/2 quantum dots defined in InAs/InP
nanowires and coupled to aluminum superconducting leads. By varying the superconducting
gap Δ with a magnetic field B we investigated the transition from strong coupling
Δ≪T K to weak-coupling Δ≫T K, where T K is the Kondo temperature. Below the critical
field, we observe a persisting zero-bias Kondo resonance that vanishes only for
low B or higher temperatures, leaving the room to more robust subgap structures
at bias voltages between Δ and 2Δ. For strong and approximately symmetric tunnel
couplings, a Josephson supercurrent is observed in addition to the Kondo peak.
We ascribe the coexistence of a Kondo resonance and a superconducting gap to a
significant density of intragap quasiparticle states, and the finite-bias subgap
structures to tunneling through Shiba states. Our results, supported by numerical
calculations, own relevance also in relation to tunnel-spectroscopy experiments
aiming at the observation of Majorana fermions in hybrid nanostructures.
acknowledgement: This work was supported by the EU Marie Curie program and by the
Agence Nationale de la Recherche. R. A. acknowledges support from the Spanish Ministry
of Science and Innovation through Grant No. FIS2009-08744
author:
- first_name: Eduardo
full_name: Lee, Eduardo J
last_name: Lee
- first_name: Xiaocheng
full_name: Jiang, Xiaocheng
last_name: Jiang
- first_name: Ramón
full_name: Aguado, Ramón
last_name: Aguado
- first_name: Georgios
full_name: Georgios Katsaros
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
- first_name: Charles
full_name: Lieber, Charles M
last_name: Lieber
- first_name: Silvano
full_name: De Franceschi, Silvano
last_name: De Franceschi
citation:
ama: Lee E, Jiang X, Aguado R, Katsaros G, Lieber C, De Franceschi S. Zero-bias
anomaly in a nanowire quantum dot coupled to superconductors. Physical Review
Letters. 2012;109(18). doi:10.1103/PhysRevLett.109.186802
apa: Lee, E., Jiang, X., Aguado, R., Katsaros, G., Lieber, C., & De Franceschi,
S. (2012). Zero-bias anomaly in a nanowire quantum dot coupled to superconductors.
Physical Review Letters. American Physical Society. https://doi.org/10.1103/PhysRevLett.109.186802
chicago: Lee, Eduardo, Xiaocheng Jiang, Ramón Aguado, Georgios Katsaros, Charles
Lieber, and Silvano De Franceschi. “Zero-Bias Anomaly in a Nanowire Quantum Dot
Coupled to Superconductors.” Physical Review Letters. American Physical
Society, 2012. https://doi.org/10.1103/PhysRevLett.109.186802.
ieee: E. Lee, X. Jiang, R. Aguado, G. Katsaros, C. Lieber, and S. De Franceschi,
“Zero-bias anomaly in a nanowire quantum dot coupled to superconductors,” Physical
Review Letters, vol. 109, no. 18. American Physical Society, 2012.
ista: Lee E, Jiang X, Aguado R, Katsaros G, Lieber C, De Franceschi S. 2012. Zero-bias
anomaly in a nanowire quantum dot coupled to superconductors. Physical Review
Letters. 109(18).
mla: Lee, Eduardo, et al. “Zero-Bias Anomaly in a Nanowire Quantum Dot Coupled to
Superconductors.” Physical Review Letters, vol. 109, no. 18, American Physical
Society, 2012, doi:10.1103/PhysRevLett.109.186802.
short: E. Lee, X. Jiang, R. Aguado, G. Katsaros, C. Lieber, S. De Franceschi, Physical
Review Letters 109 (2012).
date_created: 2018-12-11T11:53:51Z
date_published: 2012-10-31T00:00:00Z
date_updated: 2021-01-12T06:53:01Z
day: '31'
doi: 10.1103/PhysRevLett.109.186802
extern: 1
intvolume: ' 109'
issue: '18'
main_file_link:
- open_access: '1'
url: http://arxiv.org/abs/1207.1259
month: '10'
oa: 1
publication: Physical Review Letters
publication_status: published
publisher: American Physical Society
publist_id: '5366'
quality_controlled: 0
status: public
title: Zero-bias anomaly in a nanowire quantum dot coupled to superconductors
type: journal_article
volume: 109
year: '2012'
...
---
_id: '1756'
abstract:
- lang: eng
text: We report on the electronic transport properties of multiple-gate devices
fabricated from undoped silicon nanowires. Understanding and control of the relevant
transport mechanisms was achieved by means of local electrostatic gating and temperature-dependent
measurements. The roles of the source/drain contacts and of the silicon channel
could be independently evaluated and tuned. Wrap gates surrounding the silicide-silicon
contact interfaces were proved to be effective in inducing a full suppression
of the contact Schottky barriers, thereby enabling carrier injection down to liquid
helium temperature. By independently tuning the effective Schottky barrier heights,
a variety of reconfigurable device functionalities could be obtained. In particular,
the same nanowire device could be configured to work as a Schottky barrier transistor,
a Schottky diode, or a p-n diode with tunable polarities. This versatility was
eventually exploited to realize a NAND logic gate with gain well above one.
acknowledgement: This work was supported by the Agence Nationale de la Recherche (ANR)
through the ACCESS and COHESION projects and by the European Commission through
the Chemtronics program MEST-CT-2005-020513
author:
- first_name: Massimo
full_name: Mongillo, Massimo
last_name: Mongillo
- first_name: Panayotis
full_name: Spathis, Panayotis N
last_name: Spathis
- first_name: Georgios
full_name: Georgios Katsaros
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
- first_name: Pascal
full_name: Gentile, Pascal
last_name: Gentile
- first_name: Silvano
full_name: De Franceschi, Silvano
last_name: De Franceschi
citation:
ama: Mongillo M, Spathis P, Katsaros G, Gentile P, De Franceschi S. Multifunctional
devices and logic gates with undoped silicon nanowires. Nano Letters. 2012;12(6):3074-3079.
doi:10.1021/nl300930m
apa: Mongillo, M., Spathis, P., Katsaros, G., Gentile, P., & De Franceschi,
S. (2012). Multifunctional devices and logic gates with undoped silicon nanowires.
Nano Letters. American Chemical Society. https://doi.org/10.1021/nl300930m
chicago: Mongillo, Massimo, Panayotis Spathis, Georgios Katsaros, Pascal Gentile,
and Silvano De Franceschi. “Multifunctional Devices and Logic Gates with Undoped
Silicon Nanowires.” Nano Letters. American Chemical Society, 2012. https://doi.org/10.1021/nl300930m.
ieee: M. Mongillo, P. Spathis, G. Katsaros, P. Gentile, and S. De Franceschi, “Multifunctional
devices and logic gates with undoped silicon nanowires,” Nano Letters,
vol. 12, no. 6. American Chemical Society, pp. 3074–3079, 2012.
ista: Mongillo M, Spathis P, Katsaros G, Gentile P, De Franceschi S. 2012. Multifunctional
devices and logic gates with undoped silicon nanowires. Nano Letters. 12(6), 3074–3079.
mla: Mongillo, Massimo, et al. “Multifunctional Devices and Logic Gates with Undoped
Silicon Nanowires.” Nano Letters, vol. 12, no. 6, American Chemical Society,
2012, pp. 3074–79, doi:10.1021/nl300930m.
short: M. Mongillo, P. Spathis, G. Katsaros, P. Gentile, S. De Franceschi, Nano
Letters 12 (2012) 3074–3079.
date_created: 2018-12-11T11:53:50Z
date_published: 2012-06-13T00:00:00Z
date_updated: 2021-01-12T06:53:00Z
day: '13'
doi: 10.1021/nl300930m
extern: 1
intvolume: ' 12'
issue: '6'
main_file_link:
- open_access: '1'
url: http://arxiv.org/abs/1208.1465
month: '06'
oa: 1
page: 3074 - 3079
publication: Nano Letters
publication_status: published
publisher: American Chemical Society
publist_id: '5368'
quality_controlled: 0
status: public
title: Multifunctional devices and logic gates with undoped silicon nanowires
type: journal_article
volume: 12
year: '2012'
...
---
_id: '1754'
abstract:
- lang: eng
text: 'We report on a technique enabling electrical control of the contact silicidation
process in silicon nanowire devices. Undoped silicon nanowires were contacted
by pairs of nickel electrodes and each contact was selectively silicided by means
of the Joule effect. By a realtime monitoring of the nanowire electrical resistance
during the contact silicidation process we were able to fabricate nickel-silicide/silicon/nickel-
silicide devices with controlled silicon channel length down to 8 nm. '
acknowledgement: This work was supported by the Agence Nationale de la Recherche (ANR)
through the ACCESS and COHESION projects and by the European Commission through
the Chemtronics program MEST-CT-2005-020513
author:
- first_name: Massimo
full_name: Mongillo, Massimo
last_name: Mongillo
- first_name: Panayotis
full_name: Spathis, Panayotis
last_name: Spathis
- first_name: Georgios
full_name: Katsaros, Georgios
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
- first_name: Pascal
full_name: Gentile, Pascal
last_name: Gentile
- first_name: Marc
full_name: Sanquer, Marc
last_name: Sanquer
- first_name: Silvano
full_name: De Franceschi, Silvano
last_name: De Franceschi
citation:
ama: Mongillo M, Spathis P, Katsaros G, Gentile P, Sanquer M, De Franceschi S. Joule-assisted
silicidation for short-channel silicon nanowire devices. ACS Nano. 2011;5(9):7117-7123.
doi:10.1021/nn202524j
apa: Mongillo, M., Spathis, P., Katsaros, G., Gentile, P., Sanquer, M., & De
Franceschi, S. (2011). Joule-assisted silicidation for short-channel silicon nanowire
devices. ACS Nano. American Chemical Society. https://doi.org/10.1021/nn202524j
chicago: Mongillo, Massimo, Panayotis Spathis, Georgios Katsaros, Pascal Gentile,
Marc Sanquer, and Silvano De Franceschi. “Joule-Assisted Silicidation for Short-Channel
Silicon Nanowire Devices.” ACS Nano. American Chemical Society, 2011. https://doi.org/10.1021/nn202524j.
ieee: M. Mongillo, P. Spathis, G. Katsaros, P. Gentile, M. Sanquer, and S. De Franceschi,
“Joule-assisted silicidation for short-channel silicon nanowire devices,” ACS
Nano, vol. 5, no. 9. American Chemical Society, pp. 7117–7123, 2011.
ista: Mongillo M, Spathis P, Katsaros G, Gentile P, Sanquer M, De Franceschi S.
2011. Joule-assisted silicidation for short-channel silicon nanowire devices.
ACS Nano. 5(9), 7117–7123.
mla: Mongillo, Massimo, et al. “Joule-Assisted Silicidation for Short-Channel Silicon
Nanowire Devices.” ACS Nano, vol. 5, no. 9, American Chemical Society,
2011, pp. 7117–23, doi:10.1021/nn202524j.
short: M. Mongillo, P. Spathis, G. Katsaros, P. Gentile, M. Sanquer, S. De Franceschi,
ACS Nano 5 (2011) 7117–7123.
date_created: 2018-12-11T11:53:50Z
date_published: 2011-09-27T00:00:00Z
date_updated: 2021-01-12T06:52:59Z
day: '27'
doi: 10.1021/nn202524j
extern: '1'
external_id:
arxiv:
- '1110.5668'
intvolume: ' 5'
issue: '9'
language:
- iso: eng
main_file_link:
- open_access: '1'
url: http://arxiv.org/abs/1110.5668
month: '09'
oa: 1
oa_version: Preprint
page: 7117 - 7123
publication: ACS Nano
publication_status: published
publisher: American Chemical Society
publist_id: '5370'
quality_controlled: '1'
status: public
title: Joule-assisted silicidation for short-channel silicon nanowire devices
type: journal_article
user_id: 2DF688A6-F248-11E8-B48F-1D18A9856A87
volume: 5
year: '2011'
...
---
_id: '1755'
abstract:
- lang: eng
text: Spin-selective tunneling of holes in SiGe nanocrystals contacted by normal-metal
leads is reported. The spin selectivity arises from an interplay of the orbital
effect of the magnetic field with the strong spin-orbit interaction present in
the valence band of the semiconductor. We demonstrate both experimentally and
theoretically that spin-selective tunneling in semiconductor nanostructures can
be achieved without the use of ferromagnetic contacts. The reported effect, which
relies on mixing the light and heavy holes, should be observable in a broad class
of quantum-dot systems formed in semiconductors with a degenerate valence band.
acknowledgement: The work was supported by the Agence Nationale de la Recherche (through
the ACCESS and COHESION projects), U.S. DOE Contract No. DE-FG02-08ER46482 (Yale),
and the Nanosciences Foundation at Grenoble, France. G. K. acknowledges support
from the Deutsche Forschungsgemeinschaft
author:
- first_name: Georgios
full_name: Georgios Katsaros
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
- first_name: Vitaly
full_name: Golovach, Vitaly N
last_name: Golovach
- first_name: Panayotis
full_name: Spathis, Panayotis N
last_name: Spathis
- first_name: Natalia
full_name: Ares, Natalia
last_name: Ares
- first_name: Mathieu
full_name: Stoffel, Mathieu
last_name: Stoffel
- first_name: Frank
full_name: Fournel, Frank
last_name: Fournel
- first_name: Oliver
full_name: Schmidt, Oliver G
last_name: Schmidt
- first_name: Leonid
full_name: Glazman, Leonid I
last_name: Glazman
- first_name: Silvano
full_name: De Franceschi, Silvano
last_name: De Franceschi
citation:
ama: Katsaros G, Golovach V, Spathis P, et al. Observation of spin-selective tunneling
in sige nanocrystals. Physical Review Letters. 2011;107(24). doi:10.1103/PhysRevLett.107.246601
apa: Katsaros, G., Golovach, V., Spathis, P., Ares, N., Stoffel, M., Fournel, F.,
… De Franceschi, S. (2011). Observation of spin-selective tunneling in sige nanocrystals.
Physical Review Letters. American Physical Society. https://doi.org/10.1103/PhysRevLett.107.246601
chicago: Katsaros, Georgios, Vitaly Golovach, Panayotis Spathis, Natalia Ares, Mathieu
Stoffel, Frank Fournel, Oliver Schmidt, Leonid Glazman, and Silvano De Franceschi.
“Observation of Spin-Selective Tunneling in Sige Nanocrystals.” Physical Review
Letters. American Physical Society, 2011. https://doi.org/10.1103/PhysRevLett.107.246601.
ieee: G. Katsaros et al., “Observation of spin-selective tunneling in sige
nanocrystals,” Physical Review Letters, vol. 107, no. 24. American Physical
Society, 2011.
ista: Katsaros G, Golovach V, Spathis P, Ares N, Stoffel M, Fournel F, Schmidt O,
Glazman L, De Franceschi S. 2011. Observation of spin-selective tunneling in sige
nanocrystals. Physical Review Letters. 107(24).
mla: Katsaros, Georgios, et al. “Observation of Spin-Selective Tunneling in Sige
Nanocrystals.” Physical Review Letters, vol. 107, no. 24, American Physical
Society, 2011, doi:10.1103/PhysRevLett.107.246601.
short: G. Katsaros, V. Golovach, P. Spathis, N. Ares, M. Stoffel, F. Fournel, O.
Schmidt, L. Glazman, S. De Franceschi, Physical Review Letters 107 (2011).
date_created: 2018-12-11T11:53:50Z
date_published: 2011-12-07T00:00:00Z
date_updated: 2021-01-12T06:53:00Z
day: '07'
doi: 10.1103/PhysRevLett.107.246601
extern: 1
intvolume: ' 107'
issue: '24'
main_file_link:
- open_access: '1'
url: http://arxiv.org/abs/1107.3919
month: '12'
oa: 1
publication: Physical Review Letters
publication_status: published
publisher: American Physical Society
publist_id: '5369'
quality_controlled: 0
status: public
title: Observation of spin-selective tunneling in sige nanocrystals
type: journal_article
volume: 107
year: '2011'
...
---
_id: '1752'
abstract:
- lang: eng
text: The epitaxial growth of germanium on silicon leads to the self-assembly of
SiGe nanocrystals by a process that allows the size, composition and position
of the nanocrystals to be controlled. This level of control, combined with an
inherent compatibility with silicon technology, could prove useful in nanoelectronic
applications. Here, we report the confinement of holes in quantum-dot devices
made by directly contacting individual SiGe nanocrystals with aluminium electrodes,
and the production of hybrid superconductor- semiconductor devices, such as resonant
supercurrent transistors, when the quantum dot is strongly coupled to the electrodes.
Charge transport measurements on weakly coupled quantum dots reveal discrete energy
spectra, with the confined hole states displaying anisotropic gyromagnetic factors
and strong spin-orbit coupling with pronounced dependences on gate voltage and
magnetic field.
acknowledgement: We also acknowledge support from the Agence Nationale de la Recherche
(through the ACCESS and COHESION projects). G.K. acknowledges further support from
the Deutsche Forschungsgemeinschaft (grant no. KA 2922/1-1)
author:
- first_name: Georgios
full_name: Georgios Katsaros
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
- first_name: Panayotis
full_name: Spathis, Panayotis N
last_name: Spathis
- first_name: Mathieu
full_name: Stoffel, Mathieu
last_name: Stoffel
- first_name: Frank
full_name: Fournel, Frank
last_name: Fournel
- first_name: Massimo
full_name: Mongillo, Massimo
last_name: Mongillo
- first_name: Vincent
full_name: Bouchiat, Vincent
last_name: Bouchiat
- first_name: François
full_name: Lefloch, François
last_name: Lefloch
- first_name: Armando
full_name: Rastelli, Armando
last_name: Rastelli
- first_name: Oliver
full_name: Schmidt, Oliver G
last_name: Schmidt
- first_name: Silvano
full_name: De Franceschi, Silvano
last_name: De Franceschi
citation:
ama: Katsaros G, Spathis P, Stoffel M, et al. Hybrid superconductor-semiconductor
devices made from self-assembled SiGe nanocrystals on silicon. Nature Nanotechnology.
2010;5(6):458-464. doi:10.1038/nnano.2010.84
apa: Katsaros, G., Spathis, P., Stoffel, M., Fournel, F., Mongillo, M., Bouchiat,
V., … De Franceschi, S. (2010). Hybrid superconductor-semiconductor devices made
from self-assembled SiGe nanocrystals on silicon. Nature Nanotechnology.
Nature Publishing Group. https://doi.org/10.1038/nnano.2010.84
chicago: Katsaros, Georgios, Panayotis Spathis, Mathieu Stoffel, Frank Fournel,
Massimo Mongillo, Vincent Bouchiat, François Lefloch, Armando Rastelli, Oliver
Schmidt, and Silvano De Franceschi. “Hybrid Superconductor-Semiconductor Devices
Made from Self-Assembled SiGe Nanocrystals on Silicon.” Nature Nanotechnology.
Nature Publishing Group, 2010. https://doi.org/10.1038/nnano.2010.84.
ieee: G. Katsaros et al., “Hybrid superconductor-semiconductor devices made
from self-assembled SiGe nanocrystals on silicon,” Nature Nanotechnology,
vol. 5, no. 6. Nature Publishing Group, pp. 458–464, 2010.
ista: Katsaros G, Spathis P, Stoffel M, Fournel F, Mongillo M, Bouchiat V, Lefloch
F, Rastelli A, Schmidt O, De Franceschi S. 2010. Hybrid superconductor-semiconductor
devices made from self-assembled SiGe nanocrystals on silicon. Nature Nanotechnology.
5(6), 458–464.
mla: Katsaros, Georgios, et al. “Hybrid Superconductor-Semiconductor Devices Made
from Self-Assembled SiGe Nanocrystals on Silicon.” Nature Nanotechnology,
vol. 5, no. 6, Nature Publishing Group, 2010, pp. 458–64, doi:10.1038/nnano.2010.84.
short: G. Katsaros, P. Spathis, M. Stoffel, F. Fournel, M. Mongillo, V. Bouchiat,
F. Lefloch, A. Rastelli, O. Schmidt, S. De Franceschi, Nature Nanotechnology 5
(2010) 458–464.
date_created: 2018-12-11T11:53:49Z
date_published: 2010-06-01T00:00:00Z
date_updated: 2021-01-12T06:52:59Z
day: '01'
doi: 10.1038/nnano.2010.84
extern: 1
intvolume: ' 5'
issue: '6'
main_file_link:
- open_access: '1'
url: http://arxiv.org/abs/1005.1816
month: '06'
oa: 1
page: 458 - 464
publication: Nature Nanotechnology
publication_status: published
publisher: Nature Publishing Group
publist_id: '5372'
quality_controlled: 0
status: public
title: Hybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals
on silicon
type: journal_article
volume: 5
year: '2010'
...
---
_id: '1753'
abstract:
- lang: eng
text: We investigate electronic transport in n-i-n GaN nanowires with and without
AlN double barriers. The nanowires are grown by catalyst-free, plasma-assisted
molecular beam epitaxy enabling abrupt GaN/AlN interfaces as well as longitudinal
n-type doping modulation. At low temperature, transport in n-i-n GaN nanowires
is dominated by the Coulomb blockade effect. Carriers are confined in the undoped
middle region, forming single or multiple islands with a characteristic length
of ∼100 nm. The incorporation of two AlN tunnel barriers causes confinement to
occur within the GaN dot in between. In the case of a 6 nm thick dot and 2 nm
thick barriers, we observe characteristic signatures of Coulomb-blockaded transport
in single quantum dots with discrete energy states. For thinner dots and barriers,
Coulomb-blockade effects do not play a significant role while the onset of resonant
tunneling via the confined quantum levels is accompanied by a negative differential
resistance surviving up to ∼150 K.
acknowledgement: This research was partly funded by the Agence Nationale de la Recherche
through the COHESION project. G.K. acknowledges further support from the Deutsche
Forschungsgemeinschaft (Grant KA 2922/1-1)
author:
- first_name: Rudeeson
full_name: Songmuang, Rudeeson
last_name: Songmuang
- first_name: Georgios
full_name: Georgios Katsaros
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
- first_name: Eva
full_name: Monroy, Eva
last_name: Monroy
- first_name: Panayotis
full_name: Spathis, Panayotis N
last_name: Spathis
- first_name: Catherine
full_name: Bougerol, Catherine
last_name: Bougerol
- first_name: Massimo
full_name: Mongillo, Massimo
last_name: Mongillo
- first_name: Silvano
full_name: De Franceschi, Silvano
last_name: De Franceschi
citation:
ama: Songmuang R, Katsaros G, Monroy E, et al. Quantum transport in GaN/AlN double-barrier
heterostructure nanowires. Nano Letters. 2010;10(9):3545-3550. doi:10.1021/nl1017578
apa: Songmuang, R., Katsaros, G., Monroy, E., Spathis, P., Bougerol, C., Mongillo,
M., & De Franceschi, S. (2010). Quantum transport in GaN/AlN double-barrier
heterostructure nanowires. Nano Letters. American Chemical Society. https://doi.org/10.1021/nl1017578
chicago: Songmuang, Rudeeson, Georgios Katsaros, Eva Monroy, Panayotis Spathis,
Catherine Bougerol, Massimo Mongillo, and Silvano De Franceschi. “Quantum Transport
in GaN/AlN Double-Barrier Heterostructure Nanowires.” Nano Letters. American
Chemical Society, 2010. https://doi.org/10.1021/nl1017578.
ieee: R. Songmuang et al., “Quantum transport in GaN/AlN double-barrier heterostructure
nanowires,” Nano Letters, vol. 10, no. 9. American Chemical Society, pp.
3545–3550, 2010.
ista: Songmuang R, Katsaros G, Monroy E, Spathis P, Bougerol C, Mongillo M, De Franceschi
S. 2010. Quantum transport in GaN/AlN double-barrier heterostructure nanowires.
Nano Letters. 10(9), 3545–3550.
mla: Songmuang, Rudeeson, et al. “Quantum Transport in GaN/AlN Double-Barrier Heterostructure
Nanowires.” Nano Letters, vol. 10, no. 9, American Chemical Society, 2010,
pp. 3545–50, doi:10.1021/nl1017578.
short: R. Songmuang, G. Katsaros, E. Monroy, P. Spathis, C. Bougerol, M. Mongillo,
S. De Franceschi, Nano Letters 10 (2010) 3545–3550.
date_created: 2018-12-11T11:53:49Z
date_published: 2010-09-08T00:00:00Z
date_updated: 2021-01-12T06:52:59Z
day: '08'
doi: 10.1021/nl1017578
extern: 1
intvolume: ' 10'
issue: '9'
main_file_link:
- open_access: '1'
url: http://arxiv.org/abs/1005.3637
month: '09'
oa: 1
page: 3545 - 3550
publication: Nano Letters
publication_status: published
publisher: American Chemical Society
publist_id: '5371'
quality_controlled: 0
status: public
title: Quantum transport in GaN/AlN double-barrier heterostructure nanowires
type: journal_article
volume: 10
year: '2010'
...
---
_id: '1751'
abstract:
- lang: eng
text: When strained Stranski-Krastanow islands are used as "self-assembled
quantum dots," a key goal is to control the island position. Here we show
that nanoscale grooves can control the nucleation of epitaxial Ge islands on Si(001),
and can drive lateral motion of existing islands onto the grooves, even when the
grooves are very narrow and shallow compared to the islands. A position centered
on the groove minimizes energy. We use as prototype grooves the trenches which
form naturally around islands. During coarsening, the shrinking islands move laterally
to sit directly astride that trench. In subsequent growth, we demonstrate that
islands nucleate on the "empty trenches" which remain on the surface
after complete dissolution of the original islands.
author:
- first_name: Georgios
full_name: Georgios Katsaros
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
- first_name: Jerry
full_name: Tersoff, Jerry
last_name: Tersoff
- first_name: Mathieu
full_name: Stoffel, Mathieu
last_name: Stoffel
- first_name: Armando
full_name: Rastelli, Armando
last_name: Rastelli
- first_name: P
full_name: Acosta-Diaz, P
last_name: Acosta Diaz
- first_name: Gouranga
full_name: Kar, Gouranga S
last_name: Kar
- first_name: Giovanni
full_name: Costantini, Giovanni
last_name: Costantini
- first_name: Oliver
full_name: Schmidt, Oliver G
last_name: Schmidt
- first_name: Klaus
full_name: Kern, Klaus
last_name: Kern
citation:
ama: Katsaros G, Tersoff J, Stoffel M, et al. Positioning of strained islands by
interaction with surface nanogrooves. Physical Review Letters. 2008;101(9).
doi:10.1103/PhysRevLett.101.096103
apa: Katsaros, G., Tersoff, J., Stoffel, M., Rastelli, A., Acosta Diaz, P., Kar,
G., … Kern, K. (2008). Positioning of strained islands by interaction with surface
nanogrooves. Physical Review Letters. American Physical Society. https://doi.org/10.1103/PhysRevLett.101.096103
chicago: Katsaros, Georgios, Jerry Tersoff, Mathieu Stoffel, Armando Rastelli, P
Acosta Diaz, Gouranga Kar, Giovanni Costantini, Oliver Schmidt, and Klaus Kern.
“Positioning of Strained Islands by Interaction with Surface Nanogrooves.” Physical
Review Letters. American Physical Society, 2008. https://doi.org/10.1103/PhysRevLett.101.096103.
ieee: G. Katsaros et al., “Positioning of strained islands by interaction
with surface nanogrooves,” Physical Review Letters, vol. 101, no. 9. American
Physical Society, 2008.
ista: Katsaros G, Tersoff J, Stoffel M, Rastelli A, Acosta Diaz P, Kar G, Costantini
G, Schmidt O, Kern K. 2008. Positioning of strained islands by interaction with
surface nanogrooves. Physical Review Letters. 101(9).
mla: Katsaros, Georgios, et al. “Positioning of Strained Islands by Interaction
with Surface Nanogrooves.” Physical Review Letters, vol. 101, no. 9, American
Physical Society, 2008, doi:10.1103/PhysRevLett.101.096103.
short: G. Katsaros, J. Tersoff, M. Stoffel, A. Rastelli, P. Acosta Diaz, G. Kar,
G. Costantini, O. Schmidt, K. Kern, Physical Review Letters 101 (2008).
date_created: 2018-12-11T11:53:49Z
date_published: 2008-08-29T00:00:00Z
date_updated: 2021-01-12T06:52:58Z
day: '29'
doi: 10.1103/PhysRevLett.101.096103
extern: 1
intvolume: ' 101'
issue: '9'
month: '08'
publication: Physical Review Letters
publication_status: published
publisher: American Physical Society
publist_id: '5373'
quality_controlled: 0
status: public
title: Positioning of strained islands by interaction with surface nanogrooves
type: journal_article
volume: 101
year: '2008'
...
---
_id: '1749'
abstract:
- lang: eng
text: Scanning probe microscopy; Semiconductor quantum dots; Composition gradients;
Composition profiles; Nanotomography; Single quantum dots; Strained sige/si; Three-dimensional
(3D); Wet-chemical etchings; X-ray scattering measurements; quantum dot; methodology;
nanotechnology; optical tomography; scanning probe microscopy; three dimensional
imaging; Imaging, Three-Dimensional; Materials Testing; Microscopy, Scanning Probe;
Nanotechnology; Quantum Dots; Tomography,
acknowledgement: This work was supported by the BMBF (No. 03N8711) and the EU project
D-DotFET (No. 012150)
author:
- first_name: Armando
full_name: Rastelli, Armando
last_name: Rastelli
- first_name: Mathieu
full_name: Stoffel, Mathieu
last_name: Stoffel
- first_name: Ângelo
full_name: Malachias, Ângelo S
last_name: Malachias
- first_name: Tsvetelina
full_name: Merdzhanova, Tsvetelina
last_name: Merdzhanova
- first_name: Georgios
full_name: Georgios Katsaros
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
- first_name: Klaus
full_name: Kern, Klaus
last_name: Kern
- first_name: Till
full_name: Metzger, Till H
last_name: Metzger
- first_name: Oliver
full_name: Schmidt, Oliver G
last_name: Schmidt
citation:
ama: Rastelli A, Stoffel M, Malachias Â, et al. Three-dimensional composition profiles
of single quantum dots determined by scanning-probe-microscopy-based nanotomography.
Nano Letters. 2008;8(5):1404-1409. doi:10.1021/nl080290y
apa: Rastelli, A., Stoffel, M., Malachias, Â., Merdzhanova, T., Katsaros, G., Kern,
K., … Schmidt, O. (2008). Three-dimensional composition profiles of single quantum
dots determined by scanning-probe-microscopy-based nanotomography. Nano Letters.
American Chemical Society. https://doi.org/10.1021/nl080290y
chicago: Rastelli, Armando, Mathieu Stoffel, Ângelo Malachias, Tsvetelina Merdzhanova,
Georgios Katsaros, Klaus Kern, Till Metzger, and Oliver Schmidt. “Three-Dimensional
Composition Profiles of Single Quantum Dots Determined by Scanning-Probe-Microscopy-Based
Nanotomography.” Nano Letters. American Chemical Society, 2008. https://doi.org/10.1021/nl080290y.
ieee: A. Rastelli et al., “Three-dimensional composition profiles of single
quantum dots determined by scanning-probe-microscopy-based nanotomography,” Nano
Letters, vol. 8, no. 5. American Chemical Society, pp. 1404–1409, 2008.
ista: Rastelli A, Stoffel M, Malachias Â, Merdzhanova T, Katsaros G, Kern K, Metzger
T, Schmidt O. 2008. Three-dimensional composition profiles of single quantum dots
determined by scanning-probe-microscopy-based nanotomography. Nano Letters. 8(5),
1404–1409.
mla: Rastelli, Armando, et al. “Three-Dimensional Composition Profiles of Single
Quantum Dots Determined by Scanning-Probe-Microscopy-Based Nanotomography.” Nano
Letters, vol. 8, no. 5, American Chemical Society, 2008, pp. 1404–09, doi:10.1021/nl080290y.
short: A. Rastelli, M. Stoffel, Â. Malachias, T. Merdzhanova, G. Katsaros, K. Kern,
T. Metzger, O. Schmidt, Nano Letters 8 (2008) 1404–1409.
date_created: 2018-12-11T11:53:48Z
date_published: 2008-05-01T00:00:00Z
date_updated: 2021-01-12T06:52:57Z
day: '01'
doi: 10.1021/nl080290y
extern: 1
intvolume: ' 8'
issue: '5'
month: '05'
page: 1404 - 1409
publication: Nano Letters
publication_status: published
publisher: American Chemical Society
publist_id: '5374'
quality_controlled: 0
status: public
title: Three-dimensional composition profiles of single quantum dots determined by
scanning-probe-microscopy-based nanotomography
type: journal_article
volume: 8
year: '2008'
...
---
_id: '1750'
abstract:
- lang: eng
text: The authors investigate the composition profile of SiGe islands after capping
with Si to form quantum dots, using a two step etching procedure and atomic force
microscopy. Initially, the Si capping layers are removed by etching selectively
Si over Ge and then the composition of the disclosed islands is addressed by selectively
etching Ge over Si. For samples grown at 580 °C the authors show that even when
overgrowth leads to a flat Si surface and the islands undergo strong morphological
changes, a Ge-rich core region is still preserved in the dot. At high growth and
overgrowth temperatures (740 °C), the experiments show that the newly formed base
of the buried islands is more Si rich than their top. Furthermore, the authors
find that for the growth conditions used, no lateral motion takes place during
capping.
author:
- first_name: Georgios
full_name: Georgios Katsaros
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
- first_name: Mathieu
full_name: Stoffel, Mathieu
last_name: Stoffel
- first_name: Armando
full_name: Rastelli, Armando
last_name: Rastelli
- first_name: Oliver
full_name: Schmidt, Oliver G
last_name: Schmidt
- first_name: Klaus
full_name: Kern, Klaus
last_name: Kern
- first_name: Jerry
full_name: Tersoff, Jerry
last_name: Tersoff
citation:
ama: Katsaros G, Stoffel M, Rastelli A, Schmidt O, Kern K, Tersoff J. Three-dimensional
isocompositional profiles of buried SiGeSi (001) islands. Applied Physics Letters.
2007;91(1). doi:10.1063/1.2752730
apa: Katsaros, G., Stoffel, M., Rastelli, A., Schmidt, O., Kern, K., & Tersoff,
J. (2007). Three-dimensional isocompositional profiles of buried SiGeSi (001)
islands. Applied Physics Letters. American Institute of Physics. https://doi.org/10.1063/1.2752730
chicago: Katsaros, Georgios, Mathieu Stoffel, Armando Rastelli, Oliver Schmidt,
Klaus Kern, and Jerry Tersoff. “Three-Dimensional Isocompositional Profiles of
Buried SiGeSi (001) Islands.” Applied Physics Letters. American Institute
of Physics, 2007. https://doi.org/10.1063/1.2752730.
ieee: G. Katsaros, M. Stoffel, A. Rastelli, O. Schmidt, K. Kern, and J. Tersoff,
“Three-dimensional isocompositional profiles of buried SiGeSi (001) islands,”
Applied Physics Letters, vol. 91, no. 1. American Institute of Physics,
2007.
ista: Katsaros G, Stoffel M, Rastelli A, Schmidt O, Kern K, Tersoff J. 2007. Three-dimensional
isocompositional profiles of buried SiGeSi (001) islands. Applied Physics Letters.
91(1).
mla: Katsaros, Georgios, et al. “Three-Dimensional Isocompositional Profiles of
Buried SiGeSi (001) Islands.” Applied Physics Letters, vol. 91, no. 1,
American Institute of Physics, 2007, doi:10.1063/1.2752730.
short: G. Katsaros, M. Stoffel, A. Rastelli, O. Schmidt, K. Kern, J. Tersoff, Applied
Physics Letters 91 (2007).
date_created: 2018-12-11T11:53:48Z
date_published: 2007-01-01T00:00:00Z
date_updated: 2021-01-12T06:52:58Z
day: '01'
doi: 10.1063/1.2752730
extern: 1
intvolume: ' 91'
issue: '1'
month: '01'
publication: Applied Physics Letters
publication_status: published
publisher: American Institute of Physics
publist_id: '5375'
quality_controlled: 0
status: public
title: Three-dimensional isocompositional profiles of buried SiGeSi (001) islands
type: journal_article
volume: 91
year: '2007'
...
---
_id: '1745'
abstract:
- lang: eng
text: SiGe islands grown by deposition of 10 monolayers of Ge on Si(0 0 1) at 740
°C were investigated by using a combination of selective wet chemical etching
and atomic force microscopy. The used etchant, a solution consisting of ammonium
hydroxide and hydrogen peroxide, shows a high selectivity of Ge over SixGe1-x
and is characterized by relatively slow etching rates for Si-rich alloys. By performing
successive etching experiments on the same sample area, we are able to gain a
deeper insight into the lateral displacement the islands undergo during post growth
annealing.
author:
- first_name: Georgios
full_name: Georgios Katsaros
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
- first_name: Armando
full_name: Rastelli, Armando
last_name: Rastelli
- first_name: Mathieu
full_name: Stoffel, Mathieu
last_name: Stoffel
- first_name: Giovanni
full_name: Isella, Giovanni
last_name: Isella
- first_name: Hans
full_name: Von Känel, Hans
last_name: Von Känel
- first_name: Alexander
full_name: Bittner, Alexander M
last_name: Bittner
- first_name: Jerry
full_name: Tersoff, Jerry
last_name: Tersoff
- first_name: Ulrich
full_name: Denker, Ulrich
last_name: Denker
- first_name: Oliver
full_name: Schmidt, Oliver G
last_name: Schmidt
- first_name: Giovanni
full_name: Costantini, Giovanni
last_name: Costantini
- first_name: Klaus
full_name: Kern, Klaus
last_name: Kern
citation:
ama: Katsaros G, Rastelli A, Stoffel M, et al. Investigating the lateral motion
of SiGe islands by selective chemical etching. Surface Science. 2006;600(12):2608-2613.
doi:10.1016/j.susc.2006.04.027
apa: Katsaros, G., Rastelli, A., Stoffel, M., Isella, G., Von Känel, H., Bittner,
A., … Kern, K. (2006). Investigating the lateral motion of SiGe islands by selective
chemical etching. Surface Science. Elsevier. https://doi.org/10.1016/j.susc.2006.04.027
chicago: Katsaros, Georgios, Armando Rastelli, Mathieu Stoffel, Giovanni Isella,
Hans Von Känel, Alexander Bittner, Jerry Tersoff, et al. “Investigating the Lateral
Motion of SiGe Islands by Selective Chemical Etching.” Surface Science.
Elsevier, 2006. https://doi.org/10.1016/j.susc.2006.04.027.
ieee: G. Katsaros et al., “Investigating the lateral motion of SiGe islands
by selective chemical etching,” Surface Science, vol. 600, no. 12. Elsevier,
pp. 2608–2613, 2006.
ista: Katsaros G, Rastelli A, Stoffel M, Isella G, Von Känel H, Bittner A, Tersoff
J, Denker U, Schmidt O, Costantini G, Kern K. 2006. Investigating the lateral
motion of SiGe islands by selective chemical etching. Surface Science. 600(12),
2608–2613.
mla: Katsaros, Georgios, et al. “Investigating the Lateral Motion of SiGe Islands
by Selective Chemical Etching.” Surface Science, vol. 600, no. 12, Elsevier,
2006, pp. 2608–13, doi:10.1016/j.susc.2006.04.027.
short: G. Katsaros, A. Rastelli, M. Stoffel, G. Isella, H. Von Känel, A. Bittner,
J. Tersoff, U. Denker, O. Schmidt, G. Costantini, K. Kern, Surface Science 600
(2006) 2608–2613.
date_created: 2018-12-11T11:53:47Z
date_published: 2006-06-15T00:00:00Z
date_updated: 2021-01-12T06:52:56Z
day: '15'
doi: 10.1016/j.susc.2006.04.027
extern: 1
intvolume: ' 600'
issue: '12'
month: '06'
page: 2608 - 2613
publication: Surface Science
publication_status: published
publisher: Elsevier
publist_id: '5379'
quality_controlled: 0
status: public
title: Investigating the lateral motion of SiGe islands by selective chemical etching
type: journal_article
volume: 600
year: '2006'
...
---
_id: '1747'
abstract:
- lang: eng
text: 'We report on recent advances in the understanding of surface processes occurring
during growth and post-growth annealing of strained islands which may find application
as self-assembled quantum dots. We investigate the model system SiGe/Si(0 0 1)
by a new approach based on "reading the footprints" which islands leave
on the substrate during their growth and evolution. Such footprints consist of
trenches carved in the Si substrate. We distinguish between surface footprints
and footprints buried below the islands. The former allow us to discriminate islands
which are in the process of growing from those which are shrinking. Islands with
steep morphologies grow at the expense of smaller and shallower islands, consistent
with the kinetics of anomalous coarsening. While shrinking, islands change their
shape according to thermodynamic predictions. Buried footprints are investigated
by removing the SiGe epilayer by means of selective wet chemical etching. Their
reading shows that: (i) during post-growth annealing islands move laterally because
of surface-mediated Si-Ge intermixing; (ii) a tree-ring structure of trenches
is created by dislocated islands during their "cyclic" growth. This
allows us to distinguish coherent from dislocated islands and to establish whether
the latter are the result of island coalescence.'
acknowledgement: This work was supported by the BMBF (03N8711)
author:
- first_name: Armando
full_name: Rastelli, Armando
last_name: Rastelli
- first_name: Mathieu
full_name: Stoffel, Mathieu
last_name: Stoffel
- first_name: Georgios
full_name: Georgios Katsaros
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
- first_name: Jerry
full_name: Tersoff, Jerry
last_name: Tersoff
- first_name: Ulrich
full_name: Denker, Ulrich
last_name: Denker
- first_name: Tsvetelina
full_name: Merdzhanova, Tsvetelina
last_name: Merdzhanova
- first_name: Gouranga
full_name: Kar, Gouranga S
last_name: Kar
- first_name: Giovanni
full_name: Costantini, Giovanni
last_name: Costantini
- first_name: Klaus
full_name: Kern, Klaus
last_name: Kern
- first_name: Hans
full_name: Von Känel, Hans
last_name: Von Känel
- first_name: Oliver
full_name: Schmidt, Oliver G
last_name: Schmidt
citation:
ama: Rastelli A, Stoffel M, Katsaros G, et al. Reading the footprints of strained
islands. Microelectronics Journal. 2006;37(12):1471-1476. doi:10.1016/j.mejo.2006.05.029
apa: Rastelli, A., Stoffel, M., Katsaros, G., Tersoff, J., Denker, U., Merdzhanova,
T., … Schmidt, O. (2006). Reading the footprints of strained islands. Microelectronics
Journal. Elsevier. https://doi.org/10.1016/j.mejo.2006.05.029
chicago: Rastelli, Armando, Mathieu Stoffel, Georgios Katsaros, Jerry Tersoff, Ulrich
Denker, Tsvetelina Merdzhanova, Gouranga Kar, et al. “Reading the Footprints of
Strained Islands.” Microelectronics Journal. Elsevier, 2006. https://doi.org/10.1016/j.mejo.2006.05.029.
ieee: A. Rastelli et al., “Reading the footprints of strained islands,” Microelectronics
Journal, vol. 37, no. 12. Elsevier, pp. 1471–1476, 2006.
ista: Rastelli A, Stoffel M, Katsaros G, Tersoff J, Denker U, Merdzhanova T, Kar
G, Costantini G, Kern K, Von Känel H, Schmidt O. 2006. Reading the footprints
of strained islands. Microelectronics Journal. 37(12), 1471–1476.
mla: Rastelli, Armando, et al. “Reading the Footprints of Strained Islands.” Microelectronics
Journal, vol. 37, no. 12, Elsevier, 2006, pp. 1471–76, doi:10.1016/j.mejo.2006.05.029.
short: A. Rastelli, M. Stoffel, G. Katsaros, J. Tersoff, U. Denker, T. Merdzhanova,
G. Kar, G. Costantini, K. Kern, H. Von Känel, O. Schmidt, Microelectronics Journal
37 (2006) 1471–1476.
date_created: 2018-12-11T11:53:47Z
date_published: 2006-12-01T00:00:00Z
date_updated: 2021-01-12T06:52:57Z
day: '01'
doi: 10.1016/j.mejo.2006.05.029
extern: 1
intvolume: ' 37'
issue: '12'
month: '12'
page: 1471 - 1476
publication: Microelectronics Journal
publication_status: published
publisher: Elsevier
publist_id: '5377'
quality_controlled: 0
status: public
title: Reading the footprints of strained islands
type: journal_article
volume: 37
year: '2006'
...
---
_id: '1746'
abstract:
- lang: eng
text: 'A microscopic picture for the GaAs overgrowth of self-organized InAs/GaAs(001)
quantum dots is developed. Scanning tunneling microscopy measurements reveal two
capping regimes: the first being characterized by a dot shrinking and a backward
pyramid-to-dome shape transition. This regime is governed by fast dynamics resulting
in island morphologies close to thermodynamic equilibrium. The second regime is
marked by a true overgrowth and is controlled by kinetically limited surface diffusion
processes. A simple model is developed to describe the observed structural changes
which are rationalized in terms of energetic minimization driven by lattice mismatch
and alloying.'
author:
- first_name: Giovanni
full_name: Costantini, Giovanni
last_name: Costantini
- first_name: Armando
full_name: Rastelli, Armando
last_name: Rastelli
- first_name: Carlos
full_name: Manzano, Carlos
last_name: Manzano
- first_name: P
full_name: Acosta-Diaz, P
last_name: Acosta Diaz
- first_name: Rudeeson
full_name: Songmuang, Rudeeson
last_name: Songmuang
- first_name: Georgios
full_name: Georgios Katsaros
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
- first_name: Oliver
full_name: Schmidt, Oliver G
last_name: Schmidt
- first_name: Klaus
full_name: Kern, Klaus
last_name: Kern
citation:
ama: Costantini G, Rastelli A, Manzano C, et al. Interplay between thermodynamics
and kinetics in the capping of InAs/GaAs (001) quantum dots. Physical Review
Letters. 2006;96(22). doi:10.1103/PhysRevLett.96.226106
apa: Costantini, G., Rastelli, A., Manzano, C., Acosta Diaz, P., Songmuang, R.,
Katsaros, G., … Kern, K. (2006). Interplay between thermodynamics and kinetics
in the capping of InAs/GaAs (001) quantum dots. Physical Review Letters.
American Physical Society. https://doi.org/10.1103/PhysRevLett.96.226106
chicago: Costantini, Giovanni, Armando Rastelli, Carlos Manzano, P Acosta Diaz,
Rudeeson Songmuang, Georgios Katsaros, Oliver Schmidt, and Klaus Kern. “Interplay
between Thermodynamics and Kinetics in the Capping of InAs/GaAs (001) Quantum
Dots.” Physical Review Letters. American Physical Society, 2006. https://doi.org/10.1103/PhysRevLett.96.226106.
ieee: G. Costantini et al., “Interplay between thermodynamics and kinetics
in the capping of InAs/GaAs (001) quantum dots,” Physical Review Letters,
vol. 96, no. 22. American Physical Society, 2006.
ista: Costantini G, Rastelli A, Manzano C, Acosta Diaz P, Songmuang R, Katsaros
G, Schmidt O, Kern K. 2006. Interplay between thermodynamics and kinetics in the
capping of InAs/GaAs (001) quantum dots. Physical Review Letters. 96(22).
mla: Costantini, Giovanni, et al. “Interplay between Thermodynamics and Kinetics
in the Capping of InAs/GaAs (001) Quantum Dots.” Physical Review Letters,
vol. 96, no. 22, American Physical Society, 2006, doi:10.1103/PhysRevLett.96.226106.
short: G. Costantini, A. Rastelli, C. Manzano, P. Acosta Diaz, R. Songmuang, G.
Katsaros, O. Schmidt, K. Kern, Physical Review Letters 96 (2006).
date_created: 2018-12-11T11:53:47Z
date_published: 2006-01-01T00:00:00Z
date_updated: 2021-01-12T06:52:56Z
day: '01'
doi: 10.1103/PhysRevLett.96.226106
extern: 1
intvolume: ' 96'
issue: '22'
month: '01'
publication: Physical Review Letters
publication_status: published
publisher: American Physical Society
publist_id: '5378'
quality_controlled: 0
status: public
title: Interplay between thermodynamics and kinetics in the capping of InAs/GaAs (001)
quantum dots
type: journal_article
volume: 96
year: '2006'
...
---
_id: '1748'
abstract:
- lang: eng
text: The authors apply selective wet chemical etching and atomic force microscopy
to reveal the three-dimensional shape of SiGeSi (001) islands after capping with
Si. Although the "self-assembled quantum dots" remain practically unaffected
by capping in the temperature range of 300-450 °C, significant morphological changes
take place on the Si surface. At 450 °C, the morphology of the capping layer (Si
matrix) evolves toward an intriguing semifacetted structure, which we call a "ziggurat,"
giving the misleading impression of a stepped SiGe island shape.
author:
- first_name: Georgios
full_name: Georgios Katsaros
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
- first_name: Armando
full_name: Rastelli, Armando
last_name: Rastelli
- first_name: Mathieu
full_name: Stoffel, Mathieu
last_name: Stoffel
- first_name: Giovanni
full_name: Costantini, Giovanni
last_name: Costantini
- first_name: Oliver
full_name: Schmidt, Oliver G
last_name: Schmidt
- first_name: Klaus
full_name: Kern, Klaus
last_name: Kern
- first_name: Jerry
full_name: Tersoff, Jerry
last_name: Tersoff
- first_name: Elisabeth
full_name: Müller, Elisabeth
last_name: Müller
- first_name: Hans
full_name: Von Känel, Hans
last_name: Von Känel
citation:
ama: Katsaros G, Rastelli A, Stoffel M, et al. Evolution of buried semiconductor
nanostructures and origin of stepped surface mounds during capping. Applied
Physics Letters. 2006;89(25). doi:10.1063/1.2405876
apa: Katsaros, G., Rastelli, A., Stoffel, M., Costantini, G., Schmidt, O., Kern,
K., … Von Känel, H. (2006). Evolution of buried semiconductor nanostructures and
origin of stepped surface mounds during capping. Applied Physics Letters.
American Institute of Physics. https://doi.org/10.1063/1.2405876
chicago: Katsaros, Georgios, Armando Rastelli, Mathieu Stoffel, Giovanni Costantini,
Oliver Schmidt, Klaus Kern, Jerry Tersoff, Elisabeth Müller, and Hans Von Känel.
“Evolution of Buried Semiconductor Nanostructures and Origin of Stepped Surface
Mounds during Capping.” Applied Physics Letters. American Institute of
Physics, 2006. https://doi.org/10.1063/1.2405876.
ieee: G. Katsaros et al., “Evolution of buried semiconductor nanostructures
and origin of stepped surface mounds during capping,” Applied Physics Letters,
vol. 89, no. 25. American Institute of Physics, 2006.
ista: Katsaros G, Rastelli A, Stoffel M, Costantini G, Schmidt O, Kern K, Tersoff
J, Müller E, Von Känel H. 2006. Evolution of buried semiconductor nanostructures
and origin of stepped surface mounds during capping. Applied Physics Letters.
89(25).
mla: Katsaros, Georgios, et al. “Evolution of Buried Semiconductor Nanostructures
and Origin of Stepped Surface Mounds during Capping.” Applied Physics Letters,
vol. 89, no. 25, American Institute of Physics, 2006, doi:10.1063/1.2405876.
short: G. Katsaros, A. Rastelli, M. Stoffel, G. Costantini, O. Schmidt, K. Kern,
J. Tersoff, E. Müller, H. Von Känel, Applied Physics Letters 89 (2006).
date_created: 2018-12-11T11:53:48Z
date_published: 2006-01-01T00:00:00Z
date_updated: 2021-01-12T06:52:57Z
day: '01'
doi: 10.1063/1.2405876
extern: 1
intvolume: ' 89'
issue: '25'
month: '01'
publication: Applied Physics Letters
publication_status: published
publisher: American Institute of Physics
publist_id: '5376'
quality_controlled: 0
status: public
title: Evolution of buried semiconductor nanostructures and origin of stepped surface
mounds during capping
type: journal_article
volume: 89
year: '2006'
...
---
_id: '1742'
abstract:
- lang: eng
text: The effects of substrate temperature, growth rate, and postgrowth annealing
on the composition of Ge islands grown on Si(001) were investigated with a combination
of selective wet chemical etching and atomic force microscopy. A simple kinetic
model comprising only surface diffusion processes can explain all the experimentally
observed compositional profiles for pyramid and dome islands grown in the 560-620°C
range. From this model three-dimensional compositional maps were extracted. By
performing annealing experiments a change in the composition of the domes was
observed. This could be explained as the result of the islands' movement induced
by alloying-driven energy minimization. Also in this case kinetically hindered
bulk diffusion processes are not needed to explain the experimental observations.
acknowledgement: G. K. acknowledges the financial support of DAAD (Deutscher Akademischer
Austausch Dienst)
author:
- first_name: Georgios
full_name: Georgios Katsaros
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
- first_name: Giovanni
full_name: Costantini, Giovanni
last_name: Costantini
- first_name: Mathieu
full_name: Stoffel, Mathieu
last_name: Stoffel
- first_name: Rubén
full_name: Esteban, Rubén
last_name: Esteban
- first_name: Alexander
full_name: Bittner, Alexander M
last_name: Bittner
- first_name: Armando
full_name: Rastelli, Armando
last_name: Rastelli
- first_name: Ulrich
full_name: Denker, Ulrich
last_name: Denker
- first_name: Oliver
full_name: Schmidt, Oliver G
last_name: Schmidt
- first_name: Klaus
full_name: Kern, Klaus
last_name: Kern
citation:
ama: Katsaros G, Costantini G, Stoffel M, et al. Kinetic origin of island intermixing
during the growth of Ge on Si (001). Physical Review B - Condensed Matter and
Materials Physics. 2005;72(19). doi:10.1103/PhysRevB.72.195320
apa: Katsaros, G., Costantini, G., Stoffel, M., Esteban, R., Bittner, A., Rastelli,
A., … Kern, K. (2005). Kinetic origin of island intermixing during the growth
of Ge on Si (001). Physical Review B - Condensed Matter and Materials Physics.
American Physical Society. https://doi.org/10.1103/PhysRevB.72.195320
chicago: Katsaros, Georgios, Giovanni Costantini, Mathieu Stoffel, Rubén Esteban,
Alexander Bittner, Armando Rastelli, Ulrich Denker, Oliver Schmidt, and Klaus
Kern. “Kinetic Origin of Island Intermixing during the Growth of Ge on Si (001).”
Physical Review B - Condensed Matter and Materials Physics. American Physical
Society, 2005. https://doi.org/10.1103/PhysRevB.72.195320.
ieee: G. Katsaros et al., “Kinetic origin of island intermixing during the
growth of Ge on Si (001),” Physical Review B - Condensed Matter and Materials
Physics, vol. 72, no. 19. American Physical Society, 2005.
ista: Katsaros G, Costantini G, Stoffel M, Esteban R, Bittner A, Rastelli A, Denker
U, Schmidt O, Kern K. 2005. Kinetic origin of island intermixing during the growth
of Ge on Si (001). Physical Review B - Condensed Matter and Materials Physics.
72(19).
mla: Katsaros, Georgios, et al. “Kinetic Origin of Island Intermixing during the
Growth of Ge on Si (001).” Physical Review B - Condensed Matter and Materials
Physics, vol. 72, no. 19, American Physical Society, 2005, doi:10.1103/PhysRevB.72.195320.
short: G. Katsaros, G. Costantini, M. Stoffel, R. Esteban, A. Bittner, A. Rastelli,
U. Denker, O. Schmidt, K. Kern, Physical Review B - Condensed Matter and Materials
Physics 72 (2005).
date_created: 2018-12-11T11:53:46Z
date_published: 2005-11-15T00:00:00Z
date_updated: 2021-01-12T06:52:55Z
day: '15'
doi: 10.1103/PhysRevB.72.195320
extern: 1
intvolume: ' 72'
issue: '19'
month: '11'
publication: Physical Review B - Condensed Matter and Materials Physics
publication_status: published
publisher: American Physical Society
publist_id: '5382'
quality_controlled: 0
status: public
title: Kinetic origin of island intermixing during the growth of Ge on Si (001)
type: journal_article
volume: 72
year: '2005'
...
---
_id: '1740'
abstract:
- lang: eng
text: 'A systematic study of the morphology of self-organized islands in the InAs/GaAs(0
0 1) and Ge/Si(0 0 1) systems is presented, based on high-resolution scanning
tunneling microscopy measurements. We demonstrate that in both cases two main
island families coexist: smaller pyramids bound by one type of shallow facets
and larger multifaceted domes. Their structure and facet orientation are precisely
determined, thus solving a highly debated argument in the case of InAs/GaAs(0
0 1). The comparison between the two material systems reveals the existence of
striking similarities that extend even to the nature of island precursors and
to the islands that form when depositing InGaAs or GeSi alloys. The implications
of these observations on a possible universal description of the Stranski-Krastanow
growth mode are discussed with respect to recent theoretical results.'
author:
- first_name: Giovanni
full_name: Costantini, Giovanni
last_name: Costantini
- first_name: Armando
full_name: Rastelli, Armando
last_name: Rastelli
- first_name: Carlos
full_name: Manzano, Carlos
last_name: Manzano
- first_name: P
full_name: Acosta-Diaz, P
last_name: Acosta Diaz
- first_name: Georgios
full_name: Georgios Katsaros
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
- first_name: Rudeeson
full_name: Songmuang, Rudeeson
last_name: Songmuang
- first_name: Oliver
full_name: Schmidt, Oliver G
last_name: Schmidt
- first_name: Hans
full_name: Von Känel, Hans
last_name: Von Känel
- first_name: Klaus
full_name: Kern, Klaus
last_name: Kern
citation:
ama: Costantini G, Rastelli A, Manzano C, et al. Pyramids and domes in the InAs/GaAs
(0 0 1) and Ge/Si (0 0 1) systems. Journal of Crystal Growth. 2005;278(1-4):38-45.
doi:10.1016/j.jcrysgro.2004.12.047
apa: Costantini, G., Rastelli, A., Manzano, C., Acosta Diaz, P., Katsaros, G., Songmuang,
R., … Kern, K. (2005). Pyramids and domes in the InAs/GaAs (0 0 1) and Ge/Si (0
0 1) systems. Journal of Crystal Growth. Elsevier. https://doi.org/10.1016/j.jcrysgro.2004.12.047
chicago: Costantini, Giovanni, Armando Rastelli, Carlos Manzano, P Acosta Diaz,
Georgios Katsaros, Rudeeson Songmuang, Oliver Schmidt, Hans Von Känel, and Klaus
Kern. “Pyramids and Domes in the InAs/GaAs (0 0 1) and Ge/Si (0 0 1) Systems.”
Journal of Crystal Growth. Elsevier, 2005. https://doi.org/10.1016/j.jcrysgro.2004.12.047.
ieee: G. Costantini et al., “Pyramids and domes in the InAs/GaAs (0 0 1)
and Ge/Si (0 0 1) systems,” Journal of Crystal Growth, vol. 278, no. 1–4.
Elsevier, pp. 38–45, 2005.
ista: Costantini G, Rastelli A, Manzano C, Acosta Diaz P, Katsaros G, Songmuang
R, Schmidt O, Von Känel H, Kern K. 2005. Pyramids and domes in the InAs/GaAs (0
0 1) and Ge/Si (0 0 1) systems. Journal of Crystal Growth. 278(1–4), 38–45.
mla: Costantini, Giovanni, et al. “Pyramids and Domes in the InAs/GaAs (0 0 1) and
Ge/Si (0 0 1) Systems.” Journal of Crystal Growth, vol. 278, no. 1–4, Elsevier,
2005, pp. 38–45, doi:10.1016/j.jcrysgro.2004.12.047.
short: G. Costantini, A. Rastelli, C. Manzano, P. Acosta Diaz, G. Katsaros, R. Songmuang,
O. Schmidt, H. Von Känel, K. Kern, Journal of Crystal Growth 278 (2005) 38–45.
date_created: 2018-12-11T11:53:45Z
date_published: 2005-05-01T00:00:00Z
date_updated: 2021-01-12T06:52:54Z
day: '01'
doi: 10.1016/j.jcrysgro.2004.12.047
extern: 1
intvolume: ' 278'
issue: 1-4
month: '05'
page: 38 - 45
publication: Journal of Crystal Growth
publication_status: published
publisher: Elsevier
publist_id: '5384'
quality_controlled: 0
status: public
title: Pyramids and domes in the InAs/GaAs (0 0 1) and Ge/Si (0 0 1) systems
type: journal_article
volume: 278
year: '2005'
...
---
_id: '1743'
abstract:
- lang: eng
text: Laterally aligned multilayer GeSiSi islands grown on a patterned Si (001)
substrate are disclosed by selective etching of Si in a KOH solution. This procedure
allows us to visualize the vertical alignment of the islands in a three-dimensional
perspective. Our technique reveals that partly coalesced double islands in the
initial layer do not merge together, but instead gradually reproduce into well-separated
double islands in upper layers. We attribute this effect to very thin spacer layers,
which efficiently transfer the strain modulation of each island through the spacer
layer to the surface. The etching rate of Si is reduced in tensile strained regions,
which helps to preserve sufficient Si between the stacked islands to form a periodic
array of freestanding and vertically modulated heterostructure pillars.
acknowledgement: This work was supported by the BMBF (03N8711) and the EU NOE SANDiE
author:
- first_name: Zheyang
full_name: Zhong, Zheyang
last_name: Zhong
- first_name: Georgios
full_name: Georgios Katsaros
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
- first_name: Mathieu
full_name: Stoffel, Mathieu
last_name: Stoffel
- first_name: Giovanni
full_name: Costantini, Giovanni
last_name: Costantini
- first_name: Klaus
full_name: Kern, Klaus
last_name: Kern
- first_name: Oliver
full_name: Schmidt, Oliver G
last_name: Schmidt
- first_name: Neng
full_name: Jin-Phillipp, Neng Y
last_name: Jin Phillipp
- first_name: Günther
full_name: Bauer, Günther
last_name: Bauer
citation:
ama: Zhong Z, Katsaros G, Stoffel M, et al. Periodic pillar structures by Si etching
of multilayer GeSi/Si islands. Applied Physics Letters. 2005;87(26):1-3.
doi:10.1063/1.2150278
apa: Zhong, Z., Katsaros, G., Stoffel, M., Costantini, G., Kern, K., Schmidt, O.,
… Bauer, G. (2005). Periodic pillar structures by Si etching of multilayer GeSi/Si
islands. Applied Physics Letters. American Institute of Physics. https://doi.org/10.1063/1.2150278
chicago: Zhong, Zheyang, Georgios Katsaros, Mathieu Stoffel, Giovanni Costantini,
Klaus Kern, Oliver Schmidt, Neng Jin Phillipp, and Günther Bauer. “Periodic Pillar
Structures by Si Etching of Multilayer GeSi/Si Islands.” Applied Physics Letters.
American Institute of Physics, 2005. https://doi.org/10.1063/1.2150278.
ieee: Z. Zhong et al., “Periodic pillar structures by Si etching of multilayer
GeSi/Si islands,” Applied Physics Letters, vol. 87, no. 26. American Institute
of Physics, pp. 1–3, 2005.
ista: Zhong Z, Katsaros G, Stoffel M, Costantini G, Kern K, Schmidt O, Jin Phillipp
N, Bauer G. 2005. Periodic pillar structures by Si etching of multilayer GeSi/Si
islands. Applied Physics Letters. 87(26), 1–3.
mla: Zhong, Zheyang, et al. “Periodic Pillar Structures by Si Etching of Multilayer
GeSi/Si Islands.” Applied Physics Letters, vol. 87, no. 26, American Institute
of Physics, 2005, pp. 1–3, doi:10.1063/1.2150278.
short: Z. Zhong, G. Katsaros, M. Stoffel, G. Costantini, K. Kern, O. Schmidt, N.
Jin Phillipp, G. Bauer, Applied Physics Letters 87 (2005) 1–3.
date_created: 2018-12-11T11:53:46Z
date_published: 2005-01-01T00:00:00Z
date_updated: 2021-01-12T06:52:55Z
day: '01'
doi: 10.1063/1.2150278
extern: 1
intvolume: ' 87'
issue: '26'
month: '01'
page: 1 - 3
publication: Applied Physics Letters
publication_status: published
publisher: American Institute of Physics
publist_id: '5381'
quality_controlled: 0
status: public
title: Periodic pillar structures by Si etching of multilayer GeSi/Si islands
type: journal_article
volume: 87
year: '2005'
...
---
_id: '1744'
abstract:
- lang: eng
text: This paper presents optical duobinary and dicode signalling, as alternatives
to the binary format, in order to improve the transmission performance in the
presense of non-linear effects in a dense wavelength division multiplex (WDM)
optical system. Duobinary signalling is applied to an optical system to explore
the reduction of stimulated Brillouin scattering (SBS) effects. Duobinary signalling
suppresses the SBS effects, and an eye-opening improvement of 0.25 to 1.2 dB is
achieved relative to binary transmission over a range of input power levels. An
experimental study demonstrates that duobinary modulation suppresses the four
wave mixing (FWM) products of a dense WDM system by a maximum of 3 dB. The suppression
is maintained over a range of channel spacings. An investigation of the impact
of fibre dispersion on FWM products under binary, duobinary and dicode modulation
in a dense WDM system is then performed, with interchannel spacing and optical
power variation. This leads to the development of a set of guidelines for the
application areas, in which it is appropriate to use duobinary or dicode modulation
in WDM systems as a means of mitigating the impact of FWM.
acknowledgement: IET
author:
- first_name: Georgios
full_name: Georgios Katsaros
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
- first_name: Izzat
full_name: Darwazeh, Izzat Z
last_name: Darwazeh
- first_name: Phil
full_name: Lane, Phil M
last_name: Lane
citation:
ama: Katsaros G, Darwazeh I, Lane P. Non linear transmission effects in duobinary
and dicode optical systems. IEE Proceedings - Optoelectronics. 2005;152(6):344-352.
doi:10.1049/ip-opt:20045067
apa: Katsaros, G., Darwazeh, I., & Lane, P. (2005). Non linear transmission
effects in duobinary and dicode optical systems. IEE Proceedings - Optoelectronics.
Institute of Electrical Engineers. https://doi.org/10.1049/ip-opt:20045067
chicago: Katsaros, Georgios, Izzat Darwazeh, and Phil Lane. “Non Linear Transmission
Effects in Duobinary and Dicode Optical Systems.” IEE Proceedings - Optoelectronics.
Institute of Electrical Engineers, 2005. https://doi.org/10.1049/ip-opt:20045067.
ieee: G. Katsaros, I. Darwazeh, and P. Lane, “Non linear transmission effects in
duobinary and dicode optical systems,” IEE Proceedings - Optoelectronics,
vol. 152, no. 6. Institute of Electrical Engineers, pp. 344–352, 2005.
ista: Katsaros G, Darwazeh I, Lane P. 2005. Non linear transmission effects in duobinary
and dicode optical systems. IEE Proceedings - Optoelectronics. 152(6), 344–352.
mla: Katsaros, Georgios, et al. “Non Linear Transmission Effects in Duobinary and
Dicode Optical Systems.” IEE Proceedings - Optoelectronics, vol. 152, no.
6, Institute of Electrical Engineers, 2005, pp. 344–52, doi:10.1049/ip-opt:20045067.
short: G. Katsaros, I. Darwazeh, P. Lane, IEE Proceedings - Optoelectronics 152
(2005) 344–352.
date_created: 2018-12-11T11:53:46Z
date_published: 2005-12-01T00:00:00Z
date_updated: 2021-01-12T06:52:55Z
day: '01'
doi: 10.1049/ip-opt:20045067
extern: 1
intvolume: ' 152'
issue: '6'
month: '12'
page: 344 - 352
publication: IEE Proceedings - Optoelectronics
publication_status: published
publisher: Institute of Electrical Engineers
publist_id: '5380'
quality_controlled: 0
status: public
title: Non linear transmission effects in duobinary and dicode optical systems
type: journal_article
volume: 152
year: '2005'
...
---
_id: '1741'
abstract:
- lang: eng
text: SiGe islands move laterally on a Si(001) substrate during in situ postgrowth
annealing. This surprising behavior is revealed by an analysis of the substrate
surface morphology after island removal using wet chemical etching. We explain
the island motion by asymmetric surface-mediated alloying. Material leaves one
side of the island by surface diffusion, and mixes with additional Si from the
surrounding surface as it redeposits on the other side. Thus the island moves
laterally while becoming larger and more dilute.
acknowledgement: The work was supported by the BMBF (03N8711)
author:
- first_name: Ulrich
full_name: Denker, Ulrich
last_name: Denker
- first_name: Armando
full_name: Rastelli, Armando
last_name: Rastelli
- first_name: Mathieu
full_name: Stoffel, Mathieu
last_name: Stoffel
- first_name: Jerry
full_name: Tersoff, Jerry
last_name: Tersoff
- first_name: Georgios
full_name: Georgios Katsaros
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
- first_name: Giovanni
full_name: Costantini, Giovanni
last_name: Costantini
- first_name: Klaus
full_name: Kern, Klaus
last_name: Kern
- first_name: Neng
full_name: Jin-Phillipp, Neng Y
last_name: Jin Phillipp
- first_name: David
full_name: Jesson, David E
last_name: Jesson
- first_name: Oliver
full_name: Schmidt, Oliver G
last_name: Schmidt
citation:
ama: Denker U, Rastelli A, Stoffel M, et al. Lateral motion of SiGe islands driven
by surface-mediated alloying. Physical Review Letters. 2005;94(21). doi:10.1103/PhysRevLett.94.216103
apa: Denker, U., Rastelli, A., Stoffel, M., Tersoff, J., Katsaros, G., Costantini,
G., … Schmidt, O. (2005). Lateral motion of SiGe islands driven by surface-mediated
alloying. Physical Review Letters. American Physical Society. https://doi.org/10.1103/PhysRevLett.94.216103
chicago: Denker, Ulrich, Armando Rastelli, Mathieu Stoffel, Jerry Tersoff, Georgios
Katsaros, Giovanni Costantini, Klaus Kern, Neng Jin Phillipp, David Jesson, and
Oliver Schmidt. “Lateral Motion of SiGe Islands Driven by Surface-Mediated Alloying.”
Physical Review Letters. American Physical Society, 2005. https://doi.org/10.1103/PhysRevLett.94.216103.
ieee: U. Denker et al., “Lateral motion of SiGe islands driven by surface-mediated
alloying,” Physical Review Letters, vol. 94, no. 21. American Physical
Society, 2005.
ista: Denker U, Rastelli A, Stoffel M, Tersoff J, Katsaros G, Costantini G, Kern
K, Jin Phillipp N, Jesson D, Schmidt O. 2005. Lateral motion of SiGe islands driven
by surface-mediated alloying. Physical Review Letters. 94(21).
mla: Denker, Ulrich, et al. “Lateral Motion of SiGe Islands Driven by Surface-Mediated
Alloying.” Physical Review Letters, vol. 94, no. 21, American Physical
Society, 2005, doi:10.1103/PhysRevLett.94.216103.
short: U. Denker, A. Rastelli, M. Stoffel, J. Tersoff, G. Katsaros, G. Costantini,
K. Kern, N. Jin Phillipp, D. Jesson, O. Schmidt, Physical Review Letters 94 (2005).
date_created: 2018-12-11T11:53:46Z
date_published: 2005-06-03T00:00:00Z
date_updated: 2021-01-12T06:52:54Z
day: '03'
doi: 10.1103/PhysRevLett.94.216103
extern: 1
intvolume: ' 94'
issue: '21'
month: '06'
publication: Physical Review Letters
publication_status: published
publisher: American Physical Society
publist_id: '5383'
quality_controlled: 0
status: public
title: Lateral motion of SiGe islands driven by surface-mediated alloying
type: journal_article
volume: 94
year: '2005'
...
---
_id: '1738'
abstract:
- lang: eng
text: New dyes of the type Ru(II)(bdmpp)(bpy) [where bdmpp is 2,6-bis(3,5-dimethyl-N-pyrazoyl)pyridine
and bpy is 2,2′-bipyridine-4,4′-dicarboxylic acid] are prepared and characterized
by infra-red (IR), mass (MS) and electrospray mass spectroscopy (ES-MS) as well
as 1H NMR (1D and 2D) spectroscopies. The compounds present broad and very high
intensity MLCT absorption bands in the visible and can be chemically anchored
on TiO2 films via ester-like linkage involving carboxylato groups. These complexes
have been tested with success as potential molecular antennas in dye-sensitized
solar cells. Both opaque and transparent nanocrystalline TiO2 thin film electrodes
obtained by a doctor blade technique sensitized by these complexes were incorporated
in a sandwich type regenerative photoelectrochemical solar cell containing 0.1M
LiI +0.01M I2 in propylene carbonate as well as a platinized conductive glass
counter electrode. The cell was characterized by Raman spectroscopy under anodic
and cathodic bias. Two new vibration bands were observed in the lower frequency
region. The first one at 112 cm-1 is due to tri-iodide formed on the photoactive
electrode, and the second one at 167 cm-1 is a sign of the dye/iodide interaction
and corresponds to a vibration in a chemically stable "DI" intermediate
species. Under direct sunlight illumination (solar irradiance of 60 mW/cm2) by
using a composite polymer solid state electrolyte, the cell ITO/TiO2/[Ru(II)(bdmpp)(bpy)(NCS)](PF6)/electrolyte/Pt-ITO
produced a continuous photocurrent as high as 4.29mA/cm2, and gave IPCE values
about half of the corresponding values obtained by the standard N3 dye under the
same conditions. The photovoltage is about 600 mV and the overall energy conversion
cell's efficiency is as high as 1.72%.
author:
- first_name: Polycarpos
full_name: Falaras, Polycarpos
last_name: Falaras
- first_name: Katerina
full_name: Chryssou, Katerina
last_name: Chryssou
- first_name: Thomas
full_name: Stergiopoulos, Thomas
last_name: Stergiopoulos
- first_name: Ioannis
full_name: Arabatzis, Ioannis M
last_name: Arabatzis
- first_name: Georgios
full_name: Georgios Katsaros
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
- first_name: Vincent
full_name: Catalano, Vincent J
last_name: Catalano
- first_name: Raif
full_name: Kurtaran, Raif
last_name: Kurtaran
- first_name: Anne
full_name: Hugot-Le Goff, Anne
last_name: Hugot Le Goff
- first_name: Marie
full_name: Bernard, Marie C
last_name: Bernard
citation:
ama: 'Falaras P, Chryssou K, Stergiopoulos T, et al. Dye-sensitization of titanium
dioxide thin films by Ru(II)-bpp-bpy complexes. In: Vol 4801. SPIE; 2002:125-135.
doi:10.1117/12.452446'
apa: Falaras, P., Chryssou, K., Stergiopoulos, T., Arabatzis, I., Katsaros, G.,
Catalano, V., … Bernard, M. (2002). Dye-sensitization of titanium dioxide thin
films by Ru(II)-bpp-bpy complexes (Vol. 4801, pp. 125–135). Presented at the Organic
Photovoltaics, SPIE. https://doi.org/10.1117/12.452446
chicago: Falaras, Polycarpos, Katerina Chryssou, Thomas Stergiopoulos, Ioannis Arabatzis,
Georgios Katsaros, Vincent Catalano, Raif Kurtaran, Anne Hugot Le Goff, and Marie
Bernard. “Dye-Sensitization of Titanium Dioxide Thin Films by Ru(II)-Bpp-Bpy Complexes,”
4801:125–35. SPIE, 2002. https://doi.org/10.1117/12.452446.
ieee: P. Falaras et al., “Dye-sensitization of titanium dioxide thin films
by Ru(II)-bpp-bpy complexes,” presented at the Organic Photovoltaics, 2002, vol.
4801, pp. 125–135.
ista: Falaras P, Chryssou K, Stergiopoulos T, Arabatzis I, Katsaros G, Catalano
V, Kurtaran R, Hugot Le Goff A, Bernard M. 2002. Dye-sensitization of titanium
dioxide thin films by Ru(II)-bpp-bpy complexes. Organic Photovoltaics vol. 4801,
125–135.
mla: Falaras, Polycarpos, et al. Dye-Sensitization of Titanium Dioxide Thin Films
by Ru(II)-Bpp-Bpy Complexes. Vol. 4801, SPIE, 2002, pp. 125–35, doi:10.1117/12.452446.
short: P. Falaras, K. Chryssou, T. Stergiopoulos, I. Arabatzis, G. Katsaros, V.
Catalano, R. Kurtaran, A. Hugot Le Goff, M. Bernard, in:, SPIE, 2002, pp. 125–135.
conference:
name: Organic Photovoltaics
date_created: 2018-12-11T11:53:45Z
date_published: 2002-01-01T00:00:00Z
date_updated: 2021-01-12T06:52:53Z
day: '01'
doi: 10.1117/12.452446
extern: 1
intvolume: ' 4801'
month: '01'
page: 125 - 135
publication_status: published
publisher: SPIE
publist_id: '5385'
quality_controlled: 0
status: public
title: Dye-sensitization of titanium dioxide thin films by Ru(II)-bpp-bpy complexes
type: conference
volume: 4801
year: '2002'
...
---
_id: '1739'
abstract:
- lang: eng
text: Poly(ethylene oxide)/titania polymer electrolyte based photoelectrochemical
cells have been fabricated with Ru(dcbpy)2(NCS)2 complex as the sensitizer and
nanoporous TiO2 films as photoanodes. The introduction of the titania filler into
the poly(ethylene oxide) matrix reduces the crystallinity of the polymer and enhances
the mobility of the 1-/13 - redox couple, resulting in outstanding overall conversion
efficiency (4.2% under direct sunlight illumination) of the corresponding dye-sensitized
nanocrystalline TiO2 solar cell, one of the best efficiencies reported to date
for a solid-state device.
acknowledgement: 'Financial support from NCSR “Demokritos” and GSRT-Greece is greatly
acknowledged. '
author:
- first_name: Thomas
full_name: Stergiopoulos, Thomas
last_name: Stergiopoulos
- first_name: Iannis
full_name: Arabatzis, Iannis M
last_name: Arabatzis
- first_name: Georgios
full_name: Georgios Katsaros
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
- first_name: Polycarpos
full_name: Falaras, Polycarpos
last_name: Falaras
citation:
ama: Stergiopoulos T, Arabatzis I, Katsaros G, Falaras P. Binary Polyethylene Oxide/Titania
Solid-State Redox Electrolyte for Highly Efficient Nanocrystalline TiO2 Photoelectrochemical
Cells. Nano Letters. 2002;2(11):1259-1261. doi:10.1021/nl025798u
apa: Stergiopoulos, T., Arabatzis, I., Katsaros, G., & Falaras, P. (2002). Binary
Polyethylene Oxide/Titania Solid-State Redox Electrolyte for Highly Efficient
Nanocrystalline TiO2 Photoelectrochemical Cells. Nano Letters. American
Chemical Society. https://doi.org/10.1021/nl025798u
chicago: Stergiopoulos, Thomas, Iannis Arabatzis, Georgios Katsaros, and Polycarpos
Falaras. “Binary Polyethylene Oxide/Titania Solid-State Redox Electrolyte for
Highly Efficient Nanocrystalline TiO2 Photoelectrochemical Cells.” Nano Letters.
American Chemical Society, 2002. https://doi.org/10.1021/nl025798u.
ieee: T. Stergiopoulos, I. Arabatzis, G. Katsaros, and P. Falaras, “Binary Polyethylene
Oxide/Titania Solid-State Redox Electrolyte for Highly Efficient Nanocrystalline
TiO2 Photoelectrochemical Cells,” Nano Letters, vol. 2, no. 11. American
Chemical Society, pp. 1259–1261, 2002.
ista: Stergiopoulos T, Arabatzis I, Katsaros G, Falaras P. 2002. Binary Polyethylene
Oxide/Titania Solid-State Redox Electrolyte for Highly Efficient Nanocrystalline
TiO2 Photoelectrochemical Cells. Nano Letters. 2(11), 1259–1261.
mla: Stergiopoulos, Thomas, et al. “Binary Polyethylene Oxide/Titania Solid-State
Redox Electrolyte for Highly Efficient Nanocrystalline TiO2 Photoelectrochemical
Cells.” Nano Letters, vol. 2, no. 11, American Chemical Society, 2002,
pp. 1259–61, doi:10.1021/nl025798u.
short: T. Stergiopoulos, I. Arabatzis, G. Katsaros, P. Falaras, Nano Letters 2 (2002)
1259–1261.
date_created: 2018-12-11T11:53:45Z
date_published: 2002-11-01T00:00:00Z
date_updated: 2021-01-12T06:52:53Z
day: '01'
doi: 10.1021/nl025798u
extern: 1
intvolume: ' 2'
issue: '11'
month: '11'
page: 1259 - 1261
publication: Nano Letters
publication_status: published
publisher: American Chemical Society
publist_id: '5386'
quality_controlled: 0
status: public
title: Binary Polyethylene Oxide/Titania Solid-State Redox Electrolyte for Highly
Efficient Nanocrystalline TiO2 Photoelectrochemical Cells
type: journal_article
volume: 2
year: '2002'
...
---
_id: '1737'
abstract:
- lang: eng
text: A new solvent-free composite polymer electrolyte consisting of high-molecular
mass polyethylene oxide (PEO) filled with titanium oxide and containing LiI and
I2 was developed. The introduction of the inorganic filler (TiO2 Degussa P25)
into the polymer matrix produces dramatic morphological changes to the host polymer
structure. Upon addition of the inorganic oxide, the surface roughness increases,
with respect to the original polymer and in parallel, the fractal dimension decreases.
Both the thermograms and the atomic force microscope (AFM) pictures confirm the
amorphicity of the composite electrolyte. The polymer sub-units are held together
in a parallel orientation, forming straight long chains of about 500 nm in width,
along which TiO2 spherical particles of about 20-25 nm in diameter are distributed.
The polymer chains separated by the titania particles are arranged in a three-dimensional,
mechanically stable network, that creates free space and voids into which the
iodide/triodide anions can easily migrate. All solid-state dye-sensitized solar
cells fabricated using this composite electrolyte present high efficiencies (typical
maximum incident photon to current efficiency (IPCE) as high as 40% at 520 nm
and overall conversion efficiency (η) of 0.96% (Voc = 0.67 V, Jsc = 2.050 mA/cm2,
FF = 39%) under direct solar irradiation. Further improvement of the photovoltaic
performance is expected by optimization of the electrolyte parameters and of the
cell assembly.
acknowledgement: Financial support from NCSR “Demokritos” (Dimoerevna 598 project),
Empeirikeion Foundation and General Secretariat for Research and Technology of Greece
(EPET II, Greece–France and Greece–Czech Republic bilateral collaboration projects)
is also greatly acknowledged. G. Katsaros thanks the Greek State Scholarships Foundation
(IKY) for fellowship allowance
article_processing_charge: No
author:
- first_name: Georgios
full_name: Katsaros, Georgios
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
- first_name: Thomas
full_name: Stergiopoulos, Thomas
last_name: Stergiopoulos
- first_name: Iannis
full_name: Arabatzis, Iannis
last_name: Arabatzis
- first_name: Kyriaki
full_name: Papadokostaki, Kyriaki
last_name: Papadokostaki
- first_name: Polycarpos
full_name: Falaras, Polycarpos
last_name: Falaras
citation:
ama: 'Katsaros G, Stergiopoulos T, Arabatzis I, Papadokostaki K, Falaras P. A solvent-free
composite polymer/inorganic oxide electrolyte for high efficiency solid-state
dye-sensitized solar cells. Journal of Photochemistry and Photobiology A: Chemistry.
2002;149(1-3):191-198. doi:10.1016/S1010-6030(02)00027-8'
apa: 'Katsaros, G., Stergiopoulos, T., Arabatzis, I., Papadokostaki, K., & Falaras,
P. (2002). A solvent-free composite polymer/inorganic oxide electrolyte for high
efficiency solid-state dye-sensitized solar cells. Journal of Photochemistry
and Photobiology A: Chemistry. Elsevier. https://doi.org/10.1016/S1010-6030(02)00027-8'
chicago: 'Katsaros, Georgios, Thomas Stergiopoulos, Iannis Arabatzis, Kyriaki Papadokostaki,
and Polycarpos Falaras. “A Solvent-Free Composite Polymer/Inorganic Oxide Electrolyte
for High Efficiency Solid-State Dye-Sensitized Solar Cells.” Journal of Photochemistry
and Photobiology A: Chemistry. Elsevier, 2002. https://doi.org/10.1016/S1010-6030(02)00027-8.'
ieee: 'G. Katsaros, T. Stergiopoulos, I. Arabatzis, K. Papadokostaki, and P. Falaras,
“A solvent-free composite polymer/inorganic oxide electrolyte for high efficiency
solid-state dye-sensitized solar cells,” Journal of Photochemistry and Photobiology
A: Chemistry, vol. 149, no. 1–3. Elsevier, pp. 191–198, 2002.'
ista: 'Katsaros G, Stergiopoulos T, Arabatzis I, Papadokostaki K, Falaras P. 2002.
A solvent-free composite polymer/inorganic oxide electrolyte for high efficiency
solid-state dye-sensitized solar cells. Journal of Photochemistry and Photobiology
A: Chemistry. 149(1–3), 191–198.'
mla: 'Katsaros, Georgios, et al. “A Solvent-Free Composite Polymer/Inorganic Oxide
Electrolyte for High Efficiency Solid-State Dye-Sensitized Solar Cells.” Journal
of Photochemistry and Photobiology A: Chemistry, vol. 149, no. 1–3, Elsevier,
2002, pp. 191–98, doi:10.1016/S1010-6030(02)00027-8.'
short: 'G. Katsaros, T. Stergiopoulos, I. Arabatzis, K. Papadokostaki, P. Falaras,
Journal of Photochemistry and Photobiology A: Chemistry 149 (2002) 191–198.'
date_created: 2018-12-11T11:53:44Z
date_published: 2002-06-28T00:00:00Z
date_updated: 2023-07-26T08:56:55Z
day: '28'
doi: 10.1016/S1010-6030(02)00027-8
extern: '1'
intvolume: ' 149'
issue: 1-3
language:
- iso: eng
month: '06'
oa_version: None
page: 191 - 198
publication: 'Journal of Photochemistry and Photobiology A: Chemistry'
publication_identifier:
issn:
- 1010-6030
publication_status: published
publisher: Elsevier
publist_id: '5387'
status: public
title: A solvent-free composite polymer/inorganic oxide electrolyte for high efficiency
solid-state dye-sensitized solar cells
type: journal_article
user_id: ea97e931-d5af-11eb-85d4-e6957dddbf17
volume: 149
year: '2002'
...
---
_id: '1736'
abstract:
- lang: eng
text: A coding scheme called diode is compared with duobinary signalling and with
normal binary transmission. It is shown that the diode coding suppresses the FWM
products of a three channel DWDM system and this reduction against that achieved
with duobinary coding is presented. The results presented show how the average
level of the FWM products relative to the average levels of the three optical
carriers vary over the channel spacing range. The suppression observed is about
/ dB more than that achieved with duobinary modulation and is greater for narrow
channel spacing.
alternative_title:
- LEOS
article_processing_charge: No
author:
- first_name: Georgios
full_name: Katsaros, Georgios
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
- first_name: Phil
full_name: Lane, Phil
last_name: Lane
- first_name: Michelle
full_name: Murphy, Michelle
last_name: Murphy
citation:
ama: 'Katsaros G, Lane P, Murphy M. Comparison of the impact of FWM on binary, duobinary
and dicode modulation in DWDM systems. In: Proceedings of the 2000 IEEE Annual
Meeting Conference . Vol 1. IEEE; 2000:27-28. doi:10.1109/LEOS.2000.890656'
apa: 'Katsaros, G., Lane, P., & Murphy, M. (2000). Comparison of the impact
of FWM on binary, duobinary and dicode modulation in DWDM systems. In Proceedings
of the 2000 IEEE Annual Meeting Conference (Vol. 1, pp. 27–28). Rio Grande,
PR, USA: IEEE. https://doi.org/10.1109/LEOS.2000.890656'
chicago: Katsaros, Georgios, Phil Lane, and Michelle Murphy. “Comparison of the
Impact of FWM on Binary, Duobinary and Dicode Modulation in DWDM Systems.” In
Proceedings of the 2000 IEEE Annual Meeting Conference , 1:27–28. IEEE,
2000. https://doi.org/10.1109/LEOS.2000.890656.
ieee: G. Katsaros, P. Lane, and M. Murphy, “Comparison of the impact of FWM on binary,
duobinary and dicode modulation in DWDM systems,” in Proceedings of the 2000
IEEE Annual Meeting Conference , Rio Grande, PR, USA, 2000, vol. 1, pp. 27–28.
ista: Katsaros G, Lane P, Murphy M. 2000. Comparison of the impact of FWM on binary,
duobinary and dicode modulation in DWDM systems. Proceedings of the 2000 IEEE
Annual Meeting Conference . Lasers and Electro Optics Society Annual Meeting,
LEOS, vol. 1, 27–28.
mla: Katsaros, Georgios, et al. “Comparison of the Impact of FWM on Binary, Duobinary
and Dicode Modulation in DWDM Systems.” Proceedings of the 2000 IEEE Annual
Meeting Conference , vol. 1, IEEE, 2000, pp. 27–28, doi:10.1109/LEOS.2000.890656.
short: G. Katsaros, P. Lane, M. Murphy, in:, Proceedings of the 2000 IEEE Annual
Meeting Conference , IEEE, 2000, pp. 27–28.
conference:
end_date: 2000-11-16
location: Rio Grande, PR, USA
name: Lasers and Electro Optics Society Annual Meeting
start_date: 2000-11-13
date_created: 2018-12-11T11:53:44Z
date_published: 2000-01-01T00:00:00Z
date_updated: 2023-05-04T14:46:21Z
day: '01'
doi: 10.1109/LEOS.2000.890656
extern: '1'
intvolume: ' 1'
language:
- iso: eng
month: '01'
oa_version: None
page: 27 - 28
publication: 'Proceedings of the 2000 IEEE Annual Meeting Conference '
publication_identifier:
isbn:
- 078035947X
publication_status: published
publisher: IEEE
publist_id: '5388'
quality_controlled: '1'
scopus_import: '1'
status: public
title: Comparison of the impact of FWM on binary, duobinary and dicode modulation
in DWDM systems
type: conference
user_id: ea97e931-d5af-11eb-85d4-e6957dddbf17
volume: 1
year: '2000'
...