TY - JOUR AB - Superconductor/semiconductor hybrid devices have attracted increasing interest in the past years. Superconducting electronics aims to complement semiconductor technology, while hybrid architectures are at the forefront of new ideas such as topological superconductivity and protected qubits. In this work, we engineer the induced superconductivity in two-dimensional germanium hole gas by varying the distance between the quantum well and the aluminum. We demonstrate a hard superconducting gap and realize an electrically and flux tunable superconducting diode using a superconducting quantum interference device (SQUID). This allows to tune the current phase relation (CPR), to a regime where single Cooper pair tunneling is suppressed, creating a sin(2y) CPR. Shapiro experiments complement this interpretation and the microwave drive allows to create a diode with ≈ 100% efficiency. The reported results open up the path towards integration of spin qubit devices, microwave resonators and (protected) superconducting qubits on the same silicon technology compatible platform. AU - Valentini, Marco AU - Sagi, Oliver AU - Baghumyan, Levon AU - de Gijsel, Thijs AU - Jung, Jason AU - Calcaterra, Stefano AU - Ballabio, Andrea AU - Aguilera Servin, Juan L AU - Aggarwal, Kushagra AU - Janik, Marian AU - Adletzberger, Thomas AU - Seoane Souto, Rubén AU - Leijnse, Martin AU - Danon, Jeroen AU - Schrade, Constantin AU - Bakkers, Erik AU - Chrastina, Daniel AU - Isella, Giovanni AU - Katsaros, Georgios ID - 14793 JF - Nature Communications TI - Parity-conserving Cooper-pair transport and ideal superconducting diode in planar germanium VL - 15 ER - TY - JOUR AB - The epitaxial growth of a strained Ge layer, which is a promising candidate for the channel material of a hole spin qubit, has been demonstrated on 300 mm Si wafers using commercially available Si0.3Ge0.7 strain relaxed buffer (SRB) layers. The assessment of the layer and the interface qualities for a buried strained Ge layer embedded in Si0.3Ge0.7 layers is reported. The XRD reciprocal space mapping confirmed that the reduction of the growth temperature enables the 2-dimensional growth of the Ge layer fully strained with respect to the Si0.3Ge0.7. Nevertheless, dislocations at the top and/or bottom interface of the Ge layer were observed by means of electron channeling contrast imaging, suggesting the importance of the careful dislocation assessment. The interface abruptness does not depend on the selection of the precursor gases, but it is strongly influenced by the growth temperature which affects the coverage of the surface H-passivation. The mobility of 2.7 × 105 cm2/Vs is promising, while the low percolation density of 3 × 1010 /cm2 measured with a Hall-bar device at 7 K illustrates the high quality of the heterostructure thanks to the high Si0.3Ge0.7 SRB quality. AU - Shimura, Yosuke AU - Godfrin, Clement AU - Hikavyy, Andriy AU - Li, Roy AU - Aguilera Servin, Juan L AU - Katsaros, Georgios AU - Favia, Paola AU - Han, Han AU - Wan, Danny AU - de Greve, Kristiaan AU - Loo, Roger ID - 15018 IS - 5 JF - Materials Science in Semiconductor Processing KW - Mechanical Engineering KW - Mechanics of Materials KW - Condensed Matter Physics KW - General Materials Science SN - 1369-8001 TI - Compressively strained epitaxial Ge layers for quantum computing applications VL - 174 ER - TY - GEN AB - Superconductor/semiconductor hybrid devices have attracted increasing interest in the past years. Superconducting electronics aims to complement semiconductor technology, while hybrid architectures are at the forefront of new ideas such as topological superconductivity and protected qubits. In this work, we engineer the induced superconductivity in two-dimensional germanium hole gas by varying the distance between the quantum well and the aluminum. We demonstrate a hard superconducting gap and realize an electrically and flux tunable superconducting diode using a superconducting quantum interference device (SQUID). This allows to tune the current phase relation (CPR), to a regime where single Cooper pair tunneling is suppressed, creating a $ \sin \left( 2 \varphi \right)$ CPR. Shapiro experiments complement this interpretation and the microwave drive allows to create a diode with $ \approx 100 \%$ efficiency. The reported results open up the path towards monolithic integration of spin qubit devices, microwave resonators and (protected) superconducting qubits on a silicon technology compatible platform. AU - Valentini, Marco AU - Sagi, Oliver AU - Baghumyan, Levon AU - Gijsel, Thijs de AU - Jung, Jason AU - Calcaterra, Stefano AU - Ballabio, Andrea AU - Servin, Juan Aguilera AU - Aggarwal, Kushagra AU - Janik, Marian AU - Adletzberger, Thomas AU - Souto, Rubén Seoane AU - Leijnse, Martin AU - Danon, Jeroen AU - Schrade, Constantin AU - Bakkers, Erik AU - Chrastina, Daniel AU - Isella, Giovanni AU - Katsaros, Georgios ID - 13312 KW - Mesoscale and Nanoscale Physics T2 - arXiv TI - Radio frequency driven superconducting diode and parity conserving Cooper pair transport in a two-dimensional germanium hole gas ER - TY - JOUR AB - The spin-orbit interaction permits to control the state of a spin qubit via electric fields. For holes it is particularly strong, allowing for fast all electrical qubit manipulation, and yet an in-depth understanding of this interaction in hole systems is missing. Here we investigate, experimentally and theoretically, the effect of the cubic Rashba spin-orbit interaction on the mixing of the spin states by studying singlet-triplet oscillations in a planar Ge hole double quantum dot. Landau-Zener sweeps at different magnetic field directions allow us to disentangle the effects of the spin-orbit induced spin-flip term from those caused by strongly site-dependent and anisotropic quantum dot g tensors. Our work, therefore, provides new insights into the hole spin-orbit interaction, necessary for optimizing future qubit experiments. AU - Jirovec, Daniel AU - Mutter, Philipp M. AU - Hofmann, Andrea C AU - Crippa, Alessandro AU - Rychetsky, Marek AU - Craig, David L. AU - Kukucka, Josip AU - Martins, Frederico AU - Ballabio, Andrea AU - Ares, Natalia AU - Chrastina, Daniel AU - Isella, Giovanni AU - Burkard, Guido AU - Katsaros, Georgios ID - 10920 IS - 12 JF - Physical Review Letters TI - Dynamics of hole singlet-triplet qubits with large g-factor differences VL - 128 ER - TY - JOUR AB - Hybrid semiconductor–superconductor devices hold great promise for realizing topological quantum computing with Majorana zero modes1,2,3,4,5. However, multiple claims of Majorana detection, based on either tunnelling6,7,8,9,10 or Coulomb blockade (CB) spectroscopy11,12, remain disputed. Here we devise an experimental protocol that allows us to perform both types of measurement on the same hybrid island by adjusting its charging energy via tunable junctions to the normal leads. This method reduces ambiguities of Majorana detections by checking the consistency between CB spectroscopy and zero-bias peaks in non-blockaded transport. Specifically, we observe junction-dependent, even–odd modulated, single-electron CB peaks in InAs/Al hybrid nanowires without concomitant low-bias peaks in tunnelling spectroscopy. We provide a theoretical interpretation of the experimental observations in terms of low-energy, longitudinally confined island states rather than overlapping Majorana modes. Our results highlight the importance of combined measurements on the same device for the identification of topological Majorana zero modes. AU - Valentini, Marco AU - Borovkov, Maksim AU - Prada, Elsa AU - Martí-Sánchez, Sara AU - Botifoll, Marc AU - Hofmann, Andrea C AU - Arbiol, Jordi AU - Aguado, Ramón AU - San-Jose, Pablo AU - Katsaros, Georgios ID - 12118 IS - 7940 JF - Nature KW - Multidisciplinary SN - 0028-0836 TI - Majorana-like Coulomb spectroscopy in the absence of zero-bias peaks VL - 612 ER - TY - CONF AB - We firstly introduce the self-assembled growth of highly uniform Ge quantum wires with controllable position, distance and length on patterned Si (001) substrates. We then present the electrically tunable strong spin-orbit coupling, the first Ge hole spin qubit and ultrafast operation of hole spin qubit in the Ge/Si quantum wires. AU - Gao, Fei AU - Zhang, Jie Yin AU - Wang, Jian Huan AU - Ming, Ming AU - Wang, Tina AU - Zhang, Jian Jun AU - Watzinger, Hannes AU - Kukucka, Josip AU - Vukušić, Lada AU - Katsaros, Georgios AU - Wang, Ke AU - Xu, Gang AU - Li, Hai Ou AU - Guo, Guo Ping ID - 9464 SN - 9781728181769 T2 - 2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021 TI - Ge/Si quantum wires for quantum computing ER - TY - DATA AB - This .zip File contains the transport data for figures presented in the main text and supplementary material of "Enhancement of Proximity Induced Superconductivity in Planar Germanium" by K. Aggarwal, et. al. The measurements were done using Labber Software and the data is stored in the hdf5 file format. The files can be opened using either the Labber Log Browser (https://labber.org/overview/) or Labber Python API (http://labber.org/online-doc/api/LogFile.html). AU - Katsaros, Georgios ID - 9291 TI - Raw transport data for: Enhancement of proximity induced superconductivity in planar germanium ER - TY - JOUR AB - A semiconducting nanowire fully wrapped by a superconducting shell has been proposed as a platform for obtaining Majorana modes at small magnetic fields. In this study, we demonstrate that the appearance of subgap states in such structures is actually governed by the junction region in tunneling spectroscopy measurements and not the full-shell nanowire itself. Short tunneling regions never show subgap states, whereas longer junctions always do. This can be understood in terms of quantum dots forming in the junction and hosting Andreev levels in the Yu-Shiba-Rusinov regime. The intricate magnetic field dependence of the Andreev levels, through both the Zeeman and Little-Parks effects, may result in robust zero-bias peaks—features that could be easily misinterpreted as originating from Majorana zero modes but are unrelated to topological superconductivity. AU - Valentini, Marco AU - Peñaranda, Fernando AU - Hofmann, Andrea C AU - Brauns, Matthias AU - Hauschild, Robert AU - Krogstrup, Peter AU - San-Jose, Pablo AU - Prada, Elsa AU - Aguado, Ramón AU - Katsaros, Georgios ID - 8910 IS - 6550 JF - Science SN - 00368075 TI - Nontopological zero-bias peaks in full-shell nanowires induced by flux-tunable Andreev states VL - 373 ER - TY - JOUR AB - Hole gases in planar germanium can have high mobilities in combination with strong spin-orbit interaction and electrically tunable g factors, and are therefore emerging as a promising platform for creating hybrid superconductor-semiconductor devices. A key challenge towards hybrid Ge-based quantum technologies is the design of high-quality interfaces and superconducting contacts that are robust against magnetic fields. In this work, by combining the assets of aluminum, which provides good contact to the Ge, and niobium, which has a significant superconducting gap, we demonstrate highly transparent low-disordered JoFETs with relatively large ICRN products that are capable of withstanding high magnetic fields. We furthermore demonstrate the ability of phase-biasing individual JoFETs, opening up an avenue to explore topological superconductivity in planar Ge. The persistence of superconductivity in the reported hybrid devices beyond 1.8 T paves the way towards integrating spin qubits and proximity-induced superconductivity on the same chip. AU - Aggarwal, Kushagra AU - Hofmann, Andrea C AU - Jirovec, Daniel AU - Prieto Gonzalez, Ivan AU - Sammak, Amir AU - Botifoll, Marc AU - Martí-Sánchez, Sara AU - Veldhorst, Menno AU - Arbiol, Jordi AU - Scappucci, Giordano AU - Danon, Jeroen AU - Katsaros, Georgios ID - 10559 IS - 2 JF - Physical Review Research KW - general engineering SN - 2643-1564 TI - Enhancement of proximity-induced superconductivity in a planar Ge hole gas VL - 3 ER - TY - JOUR AB - In the worldwide endeavor for disruptive quantum technologies, germanium is emerging as a versatile material to realize devices capable of encoding, processing, or transmitting quantum information. These devices leverage special properties of the germanium valence-band states, commonly known as holes, such as their inherently strong spin-orbit coupling and the ability to host superconducting pairing correlations. In this Review, we initially introduce the physics of holes in low-dimensional germanium structures with key insights from a theoretical perspective. We then examine the material science progress underpinning germanium-based planar heterostructures and nanowires. We review the most significant experimental results demonstrating key building blocks for quantum technology, such as an electrically driven universal quantum gate set with spin qubits in quantum dots and superconductor-semiconductor devices for hybrid quantum systems. We conclude by identifying the most promising prospects toward scalable quantum information processing. AU - Scappucci, Giordano AU - Kloeffel, Christoph AU - Zwanenburg, Floris A. AU - Loss, Daniel AU - Myronov, Maksym AU - Zhang, Jian-Jun AU - Franceschi, Silvano De AU - Katsaros, Georgios AU - Veldhorst, Menno ID - 8911 JF - Nature Reviews Materials TI - The germanium quantum information route VL - 6 ER - TY - JOUR AB - Spin qubits are considered to be among the most promising candidates for building a quantum processor. Group IV hole spin qubits have moved into the focus of interest due to the ease of operation and compatibility with Si technology. In addition, Ge offers the option for monolithic superconductor-semiconductor integration. Here we demonstrate a hole spin qubit operating at fields below 10 mT, the critical field of Al, by exploiting the large out-of-plane hole g-factors in planar Ge and by encoding the qubit into the singlet-triplet states of a double quantum dot. We observe electrically controlled X and Z-rotations with tunable frequencies exceeding 100 MHz and dephasing times of 1μs which we extend beyond 15μs with echo techniques. These results show that Ge hole singlet triplet qubits outperform their electronic Si and GaAs based counterparts in speed and coherence, respectively. In addition, they are on par with Ge single spin qubits, but can be operated at much lower fields underlining their potential for on chip integration with superconducting technologies. AU - Jirovec, Daniel AU - Hofmann, Andrea C AU - Ballabio, Andrea AU - Mutter, Philipp M. AU - Tavani, Giulio AU - Botifoll, Marc AU - Crippa, Alessandro AU - Kukucka, Josip AU - Sagi, Oliver AU - Martins, Frederico AU - Saez Mollejo, Jaime AU - Prieto Gonzalez, Ivan AU - Borovkov, Maksim AU - Arbiol, Jordi AU - Chrastina, Daniel AU - Isella, Giovanni AU - Katsaros, Georgios ID - 8909 IS - 8 JF - Nature Materials SN - 1476-1122 TI - A singlet triplet hole spin qubit in planar Ge VL - 20 ER - TY - GEN AB - The potential of Si and SiGe-based devices for the scaling of quantum circuits is tainted by device variability. Each device needs to be tuned to operation conditions. We give a key step towards tackling this variability with an algorithm that, without modification, is capable of tuning a 4-gate Si FinFET, a 5-gate GeSi nanowire and a 7-gate SiGe heterostructure double quantum dot device from scratch. We achieve tuning times of 30, 10, and 92 minutes, respectively. The algorithm also provides insight into the parameter space landscape for each of these devices. These results show that overarching solutions for the tuning of quantum devices are enabled by machine learning. AU - Severin, B. AU - Lennon, D. T. AU - Camenzind, L. C. AU - Vigneau, F. AU - Fedele, F. AU - Jirovec, Daniel AU - Ballabio, A. AU - Chrastina, D. AU - Isella, G. AU - Kruijf, M. de AU - Carballido, M. J. AU - Svab, S. AU - Kuhlmann, A. V. AU - Braakman, F. R. AU - Geyer, S. AU - Froning, F. N. M. AU - Moon, H. AU - Osborne, M. A. AU - Sejdinovic, D. AU - Katsaros, Georgios AU - Zumbühl, D. M. AU - Briggs, G. A. D. AU - Ares, N. ID - 10066 T2 - arXiv TI - Cross-architecture tuning of silicon and SiGe-based quantum devices using machine learning ER - TY - DATA AB - This data collection contains the transport data for figures presented in the supplementary material of "Enhancement of Proximity Induced Superconductivity in Planar Germanium" by K. Aggarwal, et. al. The measurements were done using Labber Software and the data is stored in the hdf5 file format. The files can be opened using either the Labber Log Browser (https://labber.org/overview/) or Labber Python API (http://labber.org/online-doc/api/LogFile.html). AU - Katsaros, Georgios ID - 8834 TI - Enhancement of proximity induced superconductivity in planar Germanium ER - TY - JOUR AB - Semiconductor nanowires have been playing a crucial role in the development of nanoscale devices for the realization of spin qubits, Majorana fermions, single photon emitters, nanoprocessors, etc. The monolithic growth of site‐controlled nanowires is a prerequisite toward the next generation of devices that will require addressability and scalability. Here, combining top‐down nanofabrication and bottom‐up self‐assembly, the growth of Ge wires on prepatterned Si (001) substrates with controllable position, distance, length, and structure is reported. This is achieved by a novel growth process that uses a SiGe strain‐relaxation template and can be potentially generalized to other material combinations. Transport measurements show an electrically tunable spin–orbit coupling, with a spin–orbit length similar to that of III–V materials. Also, charge sensing between quantum dots in closely spaced wires is observed, which underlines their potential for the realization of advanced quantum devices. The reported results open a path toward scalable qubit devices using nanowires on silicon. AU - Gao, Fei AU - Wang, Jian-Huan AU - Watzinger, Hannes AU - Hu, Hao AU - Rančić, Marko J. AU - Zhang, Jie-Yin AU - Wang, Ting AU - Yao, Yuan AU - Wang, Gui-Lei AU - Kukucka, Josip AU - Vukušić, Lada AU - Kloeffel, Christoph AU - Loss, Daniel AU - Liu, Feng AU - Katsaros, Georgios AU - Zhang, Jian-Jun ID - 7541 IS - 16 JF - Advanced Materials SN - 0935-9648 TI - Site-controlled uniform Ge/Si hut wires with electrically tunable spin-orbit coupling VL - 32 ER - TY - DATA AU - Katsaros, Georgios ID - 9222 TI - Transport data for: Site‐controlled uniform Ge/Si Hut wires with electrically tunable spin–orbit coupling ER - TY - JOUR AB - Using inelastic cotunneling spectroscopy we observe a zero field splitting within the spin triplet manifold of Ge hut wire quantum dots. The states with spin ±1 in the confinement direction are energetically favored by up to 55 μeV compared to the spin 0 triplet state because of the strong spin–orbit coupling. The reported effect should be observable in a broad class of strongly confined hole quantum-dot systems and might need to be considered when operating hole spin qubits. AU - Katsaros, Georgios AU - Kukucka, Josip AU - Vukušić, Lada AU - Watzinger, Hannes AU - Gao, Fei AU - Wang, Ting AU - Zhang, Jian-Jun AU - Held, Karsten ID - 8203 IS - 7 JF - Nano Letters SN - 1530-6984 TI - Zero field splitting of heavy-hole states in quantum dots VL - 20 ER - TY - DATA AB - These are the supplementary research data to the publication "Zero field splitting of heavy-hole states in quantum dots". All matrix files have the same format. Within each column the bias voltage is changed. Each column corresponds to either a different gate voltage or magnetic field. The voltage values are given in mV, the current values in pA. Find a specific description in the included Readme file. AU - Katsaros, Georgios ID - 7689 TI - Supplementary data for "Zero field splitting of heavy-hole states in quantum dots" ER - TY - GEN AB - Holes in planar Ge have high mobilities, strong spin-orbit interaction and electrically tunable g-factors, and are therefore emerging as a promising candidate for hybrid superconductorsemiconductor devices. This is further motivated by the observation of supercurrent transport in planar Ge Josephson Field effect transistors (JoFETs). A key challenge towards hybrid germanium quantum technology is the design of high quality interfaces and superconducting contacts that are robust against magnetic fields. By combining the assets of Al, which has a long superconducting coherence, and Nb, which has a significant superconducting gap, we form low-disordered JoFETs with large ICRN products that are capable of withstanding high magnetic fields. We furthermore demonstrate the ability of phase-biasing individual JoFETs opening up an avenue to explore topological superconductivity in planar Ge. The persistence of superconductivity in the reported hybrid devices beyond 1.8 T paves the way towards integrating spin qubits and proximity-induced superconductivity on the same chip. AU - Aggarwal, Kushagra AU - Hofmann, Andrea C AU - Jirovec, Daniel AU - Prieto Gonzalez, Ivan AU - Sammak, Amir AU - Botifoll, Marc AU - Marti-Sanchez, Sara AU - Veldhorst, Menno AU - Arbiol, Jordi AU - Scappucci, Giordano AU - Katsaros, Georgios ID - 8831 T2 - arXiv TI - Enhancement of proximity induced superconductivity in planar Germanium ER - TY - GEN AB - We study double quantum dots in a Ge/SiGe heterostructure and test their maturity towards singlet-triplet ($S-T_0$) qubits. We demonstrate a large range of tunability, from two single quantum dots to a double quantum dot. We measure Pauli spin blockade and study the anisotropy of the $g$-factor. We use an adjacent quantum dot for sensing charge transitions in the double quantum dot at interest. In conclusion, Ge/SiGe possesses all ingredients necessary for building a singlet-triplet qubit. AU - Hofmann, Andrea C AU - Jirovec, Daniel AU - Borovkov, Maxim AU - Prieto Gonzalez, Ivan AU - Ballabio, Andrea AU - Frigerio, Jacopo AU - Chrastina, Daniel AU - Isella, Giovanni AU - Katsaros, Georgios ID - 10065 T2 - arXiv TI - Assessing the potential of Ge/SiGe quantum dots as hosts for singlet-triplet qubits ER - TY - JOUR AB - Holes confined in quantum dots have gained considerable interest in the past few years due to their potential as spin qubits. Here we demonstrate two-axis control of a spin 3/2 qubit in natural Ge. The qubit is formed in a hut wire double quantum dot device. The Pauli spin blockade principle allowed us to demonstrate electric dipole spin resonance by applying a radio frequency electric field to one of the electrodes defining the double quantum dot. Coherent hole spin oscillations with Rabi frequencies reaching 140 MHz are demonstrated and dephasing times of 130 ns are measured. The reported results emphasize the potential of Ge as a platform for fast and electrically tunable hole spin qubit devices. AU - Watzinger, Hannes AU - Kukucka, Josip AU - Vukusic, Lada AU - Gao, Fei AU - Wang, Ting AU - Schäffler, Friedrich AU - Zhang, Jian AU - Katsaros, Georgios ID - 77 IS - 3902 JF - Nature Communications TI - A germanium hole spin qubit VL - 9 ER -