---
_id: '9331'
abstract:
- lang: eng
text: 'Quantum entanglement has been generated and verified in cold-atom experiments
and used to make atom-interferometric measurements below the shot-noise limit.
However, current state-of-the-art cold-atom devices exploit separable (i.e., unentangled)
atomic states. This perspective piece asks the question: can entanglement usefully
improve cold-atom sensors, in the sense that it gives new sensing capabilities
unachievable with current state-of-the-art devices? We briefly review the state-of-the-art
in precision cold-atom sensing, focusing on clocks and inertial sensors, identifying
the potential benefits entanglement could bring to these devices, and the challenges
that need to be overcome to realize these benefits. We survey demonstrated methods
of generating metrologically useful entanglement in cold-atom systems, note their
relative strengths and weaknesses, and assess their prospects for near-to-medium
term quantum-enhanced cold-atom sensing.'
acknowledgement: We acknowledge fruitful discussions with John Close, Chris Freier,
Kyle Hardman, Joseph Hope, and Paul Wigley, and insightful suggestions made by Franck
Pereira dos Santos on behalf of the Atom Interferometry and Inertial Sensors team
at SYRTE. S.S.S. was supported by an Australian Research Council Discovery Early
Career Researcher Award (DECRA), Project No. DE200100495. O.H. was supported by
IST Austria.
article_number: '140501'
article_processing_charge: No
article_type: original
author:
- first_name: Stuart S.
full_name: Szigeti, Stuart S.
last_name: Szigeti
- first_name: Onur
full_name: Hosten, Onur
id: 4C02D85E-F248-11E8-B48F-1D18A9856A87
last_name: Hosten
orcid: 0000-0002-2031-204X
- first_name: Simon A.
full_name: Haine, Simon A.
last_name: Haine
citation:
ama: 'Szigeti SS, Hosten O, Haine SA. Improving cold-atom sensors with quantum entanglement:
Prospects and challenges. Applied Physics Letters. 2021;118(14). doi:10.1063/5.0050235'
apa: 'Szigeti, S. S., Hosten, O., & Haine, S. A. (2021). Improving cold-atom
sensors with quantum entanglement: Prospects and challenges. Applied Physics
Letters. AIP Publishing. https://doi.org/10.1063/5.0050235'
chicago: 'Szigeti, Stuart S., Onur Hosten, and Simon A. Haine. “Improving Cold-Atom
Sensors with Quantum Entanglement: Prospects and Challenges.” Applied Physics
Letters. AIP Publishing, 2021. https://doi.org/10.1063/5.0050235.'
ieee: 'S. S. Szigeti, O. Hosten, and S. A. Haine, “Improving cold-atom sensors with
quantum entanglement: Prospects and challenges,” Applied Physics Letters,
vol. 118, no. 14. AIP Publishing, 2021.'
ista: 'Szigeti SS, Hosten O, Haine SA. 2021. Improving cold-atom sensors with quantum
entanglement: Prospects and challenges. Applied Physics Letters. 118(14), 140501.'
mla: 'Szigeti, Stuart S., et al. “Improving Cold-Atom Sensors with Quantum Entanglement:
Prospects and Challenges.” Applied Physics Letters, vol. 118, no. 14, 140501,
AIP Publishing, 2021, doi:10.1063/5.0050235.'
short: S.S. Szigeti, O. Hosten, S.A. Haine, Applied Physics Letters 118 (2021).
date_created: 2021-04-18T22:01:40Z
date_published: 2021-04-07T00:00:00Z
date_updated: 2023-08-07T14:36:42Z
day: '07'
department:
- _id: OnHo
doi: 10.1063/5.0050235
external_id:
arxiv:
- '2010.09168'
isi:
- '000637702100001'
intvolume: ' 118'
isi: 1
issue: '14'
language:
- iso: eng
main_file_link:
- open_access: '1'
url: https://arxiv.org/abs/2010.09168
month: '04'
oa: 1
oa_version: Preprint
publication: Applied Physics Letters
publication_identifier:
issn:
- '00036951'
publication_status: published
publisher: AIP Publishing
quality_controlled: '1'
scopus_import: '1'
status: public
title: 'Improving cold-atom sensors with quantum entanglement: Prospects and challenges'
type: journal_article
user_id: 4359f0d1-fa6c-11eb-b949-802e58b17ae8
volume: 118
year: '2021'
...
---
_id: '796'
abstract:
- lang: eng
text: We present the fabrication and characterization of an aluminum transmon qubit
on a silicon-on-insulator substrate. Key to the qubit fabrication is the use of
an anhydrous hydrofluoric vapor process which selectively removes the lossy silicon
oxide buried underneath the silicon device layer. For a 5.6 GHz qubit measured
dispersively by a 7.1 GHz resonator, we find T1 = 3.5 μs and T∗2 = 2.2 μs. This
process in principle permits the co-fabrication of silicon photonic and mechanical
elements, providing a route towards chip-scale integration of electro-opto-mechanical
transducers for quantum networking of superconducting microwave quantum circuits.
The additional processing steps are compatible with established fabrication techniques
for aluminum transmon qubits on silicon.
acknowledgement: This work was supported by the AFOSR MURI Quantum Photonic Matter
(Grant No. 16RT0696), the AFOSR MURI Wiring Quantum Networks with Mechanical Transducers
(Grant No. FA9550-15-1-0015), the Institute for Quantum Information and Matter,
an NSF Physics Frontiers Center (Grant No. PHY-1125565) with the support of the
Gordon and Betty Moore Foundation, and the Kavli Nanoscience Institute at Caltech.
A.J.K. acknowledges the IQIM Postdoctoral Fellowship.
article_number: '042603'
article_processing_charge: No
author:
- first_name: Andrew J
full_name: Keller, Andrew J
last_name: Keller
- first_name: Paul
full_name: Dieterle, Paul
last_name: Dieterle
- first_name: Michael
full_name: Fang, Michael
last_name: Fang
- first_name: Brett
full_name: Berger, Brett
last_name: Berger
- first_name: Johannes M
full_name: Fink, Johannes M
id: 4B591CBA-F248-11E8-B48F-1D18A9856A87
last_name: Fink
orcid: 0000-0001-8112-028X
- first_name: Oskar
full_name: Painter, Oskar
last_name: Painter
citation:
ama: Keller AJ, Dieterle P, Fang M, Berger B, Fink JM, Painter O. Al transmon qubits
on silicon on insulator for quantum device integration. Applied Physics Letters.
2017;111(4). doi:10.1063/1.4994661
apa: Keller, A. J., Dieterle, P., Fang, M., Berger, B., Fink, J. M., & Painter,
O. (2017). Al transmon qubits on silicon on insulator for quantum device integration.
Applied Physics Letters. American Institute of Physics. https://doi.org/10.1063/1.4994661
chicago: Keller, Andrew J, Paul Dieterle, Michael Fang, Brett Berger, Johannes M
Fink, and Oskar Painter. “Al Transmon Qubits on Silicon on Insulator for Quantum
Device Integration.” Applied Physics Letters. American Institute of Physics,
2017. https://doi.org/10.1063/1.4994661.
ieee: A. J. Keller, P. Dieterle, M. Fang, B. Berger, J. M. Fink, and O. Painter,
“Al transmon qubits on silicon on insulator for quantum device integration,” Applied
Physics Letters, vol. 111, no. 4. American Institute of Physics, 2017.
ista: Keller AJ, Dieterle P, Fang M, Berger B, Fink JM, Painter O. 2017. Al transmon
qubits on silicon on insulator for quantum device integration. Applied Physics
Letters. 111(4), 042603.
mla: Keller, Andrew J., et al. “Al Transmon Qubits on Silicon on Insulator for Quantum
Device Integration.” Applied Physics Letters, vol. 111, no. 4, 042603,
American Institute of Physics, 2017, doi:10.1063/1.4994661.
short: A.J. Keller, P. Dieterle, M. Fang, B. Berger, J.M. Fink, O. Painter, Applied
Physics Letters 111 (2017).
date_created: 2018-12-11T11:48:33Z
date_published: 2017-07-01T00:00:00Z
date_updated: 2023-09-27T12:13:36Z
day: '01'
department:
- _id: JoFi
doi: 10.1063/1.4994661
external_id:
isi:
- '000406779700031'
intvolume: ' 111'
isi: 1
issue: '4'
language:
- iso: eng
main_file_link:
- open_access: '1'
url: https://arxiv.org/abs/1703.10195
month: '07'
oa: 1
oa_version: Submitted Version
publication: Applied Physics Letters
publication_identifier:
issn:
- '00036951'
publication_status: published
publisher: American Institute of Physics
publist_id: '6857'
quality_controlled: '1'
scopus_import: '1'
status: public
title: Al transmon qubits on silicon on insulator for quantum device integration
type: journal_article
user_id: c635000d-4b10-11ee-a964-aac5a93f6ac1
volume: 111
year: '2017'
...