---
_id: '15018'
abstract:
- lang: eng
text: The epitaxial growth of a strained Ge layer, which is a promising candidate
for the channel material of a hole spin qubit, has been demonstrated on 300 mm
Si wafers using commercially available Si0.3Ge0.7 strain relaxed buffer (SRB)
layers. The assessment of the layer and the interface qualities for a buried strained
Ge layer embedded in Si0.3Ge0.7 layers is reported. The XRD reciprocal space mapping
confirmed that the reduction of the growth temperature enables the 2-dimensional
growth of the Ge layer fully strained with respect to the Si0.3Ge0.7. Nevertheless,
dislocations at the top and/or bottom interface of the Ge layer were observed
by means of electron channeling contrast imaging, suggesting the importance of
the careful dislocation assessment. The interface abruptness does not depend on
the selection of the precursor gases, but it is strongly influenced by the growth
temperature which affects the coverage of the surface H-passivation. The mobility
of 2.7 × 105 cm2/Vs is promising, while the low percolation density of 3 × 1010
/cm2 measured with a Hall-bar device at 7 K illustrates the high quality of the
heterostructure thanks to the high Si0.3Ge0.7 SRB quality.
acknowledgement: The Ge project received funding from the European Union's Horizon
Europe programme under the Grant Agreement 101069515 – IGNITE. Siltronic AG is acknowledged
for providing the SRB wafers. This work was supported by Imec's Industrial Affiliation
Program on Quantum Computing.
article_number: '108231'
article_processing_charge: No
article_type: original
author:
- first_name: Yosuke
full_name: Shimura, Yosuke
last_name: Shimura
- first_name: Clement
full_name: Godfrin, Clement
last_name: Godfrin
- first_name: Andriy
full_name: Hikavyy, Andriy
last_name: Hikavyy
- first_name: Roy
full_name: Li, Roy
last_name: Li
- first_name: Juan L
full_name: Aguilera Servin, Juan L
id: 2A67C376-F248-11E8-B48F-1D18A9856A87
last_name: Aguilera Servin
orcid: 0000-0002-2862-8372
- first_name: Georgios
full_name: Katsaros, Georgios
id: 38DB5788-F248-11E8-B48F-1D18A9856A87
last_name: Katsaros
orcid: 0000-0001-8342-202X
- first_name: Paola
full_name: Favia, Paola
last_name: Favia
- first_name: Han
full_name: Han, Han
last_name: Han
- first_name: Danny
full_name: Wan, Danny
last_name: Wan
- first_name: Kristiaan
full_name: de Greve, Kristiaan
last_name: de Greve
- first_name: Roger
full_name: Loo, Roger
last_name: Loo
citation:
ama: Shimura Y, Godfrin C, Hikavyy A, et al. Compressively strained epitaxial Ge
layers for quantum computing applications. Materials Science in Semiconductor
Processing. 2024;174(5). doi:10.1016/j.mssp.2024.108231
apa: Shimura, Y., Godfrin, C., Hikavyy, A., Li, R., Aguilera Servin, J. L., Katsaros,
G., … Loo, R. (2024). Compressively strained epitaxial Ge layers for quantum computing
applications. Materials Science in Semiconductor Processing. Elsevier.
https://doi.org/10.1016/j.mssp.2024.108231
chicago: Shimura, Yosuke, Clement Godfrin, Andriy Hikavyy, Roy Li, Juan L Aguilera
Servin, Georgios Katsaros, Paola Favia, et al. “Compressively Strained Epitaxial
Ge Layers for Quantum Computing Applications.” Materials Science in Semiconductor
Processing. Elsevier, 2024. https://doi.org/10.1016/j.mssp.2024.108231.
ieee: Y. Shimura et al., “Compressively strained epitaxial Ge layers for
quantum computing applications,” Materials Science in Semiconductor Processing,
vol. 174, no. 5. Elsevier, 2024.
ista: Shimura Y, Godfrin C, Hikavyy A, Li R, Aguilera Servin JL, Katsaros G, Favia
P, Han H, Wan D, de Greve K, Loo R. 2024. Compressively strained epitaxial Ge
layers for quantum computing applications. Materials Science in Semiconductor
Processing. 174(5), 108231.
mla: Shimura, Yosuke, et al. “Compressively Strained Epitaxial Ge Layers for Quantum
Computing Applications.” Materials Science in Semiconductor Processing,
vol. 174, no. 5, 108231, Elsevier, 2024, doi:10.1016/j.mssp.2024.108231.
short: Y. Shimura, C. Godfrin, A. Hikavyy, R. Li, J.L. Aguilera Servin, G. Katsaros,
P. Favia, H. Han, D. Wan, K. de Greve, R. Loo, Materials Science in Semiconductor
Processing 174 (2024).
date_created: 2024-02-22T14:10:40Z
date_published: 2024-02-20T00:00:00Z
date_updated: 2024-02-26T10:36:35Z
day: '20'
ddc:
- '530'
department:
- _id: GeKa
- _id: NanoFab
doi: 10.1016/j.mssp.2024.108231
has_accepted_license: '1'
intvolume: ' 174'
issue: '5'
keyword:
- Mechanical Engineering
- Mechanics of Materials
- Condensed Matter Physics
- General Materials Science
language:
- iso: eng
main_file_link:
- open_access: '1'
url: https://doi.org/10.1016/j.mssp.2024.108231
month: '02'
oa: 1
oa_version: Published Version
project:
- _id: 34c0acea-11ca-11ed-8bc3-8775e10fd452
grant_number: '101069515'
name: Integrated GermaNIum quanTum tEchnology
publication: Materials Science in Semiconductor Processing
publication_identifier:
issn:
- 1369-8001
publication_status: epub_ahead
publisher: Elsevier
quality_controlled: '1'
status: public
title: Compressively strained epitaxial Ge layers for quantum computing applications
tmp:
image: /images/cc_by.png
legal_code_url: https://creativecommons.org/licenses/by/4.0/legalcode
name: Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)
short: CC BY (4.0)
type: journal_article
user_id: 2DF688A6-F248-11E8-B48F-1D18A9856A87
volume: 174
year: '2024'
...
---
_id: '15011'
abstract:
- lang: eng
text: Pruning large language models (LLMs) from the BERT family has emerged as a
standard compression benchmark, and several pruning methods have been proposed
for this task. The recent “Sparsity May Cry” (SMC) benchmark put into question
the validity of all existing methods, exhibiting a more complex setup where many
known pruning methods appear to fail. We revisit the question of accurate BERT-pruning
during fine-tuning on downstream datasets, and propose a set of general guidelines
for successful pruning, even on the challenging SMC benchmark. First, we perform
a cost-vs-benefits analysis of pruning model components, such as the embeddings
and the classification head; second, we provide a simple-yet-general way of scaling
training, sparsification and learning rate schedules relative to the desired target
sparsity; finally, we investigate the importance of proper parametrization for
Knowledge Distillation in the context of LLMs. Our simple insights lead to state-of-the-art
results, both on classic BERT-pruning benchmarks, as well as on the SMC benchmark,
showing that even classic gradual magnitude pruning (GMP) can yield competitive
results, with the right approach.
alternative_title:
- PMLR
article_processing_charge: No
author:
- first_name: Eldar
full_name: Kurtic, Eldar
id: 47beb3a5-07b5-11eb-9b87-b108ec578218
last_name: Kurtic
- first_name: Torsten
full_name: Hoefler, Torsten
last_name: Hoefler
- first_name: Dan-Adrian
full_name: Alistarh, Dan-Adrian
id: 4A899BFC-F248-11E8-B48F-1D18A9856A87
last_name: Alistarh
orcid: 0000-0003-3650-940X
citation:
ama: 'Kurtic E, Hoefler T, Alistarh D-A. How to prune your language model: Recovering
accuracy on the “Sparsity May Cry” benchmark. In: Proceedings of Machine Learning
Research. Vol 234. ML Research Press; 2024:542-553.'
apa: 'Kurtic, E., Hoefler, T., & Alistarh, D.-A. (2024). How to prune your language
model: Recovering accuracy on the “Sparsity May Cry” benchmark. In Proceedings
of Machine Learning Research (Vol. 234, pp. 542–553). Hongkong, China: ML
Research Press.'
chicago: 'Kurtic, Eldar, Torsten Hoefler, and Dan-Adrian Alistarh. “How to Prune
Your Language Model: Recovering Accuracy on the ‘Sparsity May Cry’ Benchmark.”
In Proceedings of Machine Learning Research, 234:542–53. ML Research Press,
2024.'
ieee: 'E. Kurtic, T. Hoefler, and D.-A. Alistarh, “How to prune your language model:
Recovering accuracy on the ‘Sparsity May Cry’ benchmark,” in Proceedings of
Machine Learning Research, Hongkong, China, 2024, vol. 234, pp. 542–553.'
ista: 'Kurtic E, Hoefler T, Alistarh D-A. 2024. How to prune your language model:
Recovering accuracy on the ‘Sparsity May Cry’ benchmark. Proceedings of Machine
Learning Research. CPAL: Conference on Parsimony and Learning, PMLR, vol. 234,
542–553.'
mla: 'Kurtic, Eldar, et al. “How to Prune Your Language Model: Recovering Accuracy
on the ‘Sparsity May Cry’ Benchmark.” Proceedings of Machine Learning Research,
vol. 234, ML Research Press, 2024, pp. 542–53.'
short: E. Kurtic, T. Hoefler, D.-A. Alistarh, in:, Proceedings of Machine Learning
Research, ML Research Press, 2024, pp. 542–553.
conference:
end_date: 2024-01-06
location: Hongkong, China
name: 'CPAL: Conference on Parsimony and Learning'
start_date: 2024-01-03
date_created: 2024-02-18T23:01:03Z
date_published: 2024-01-08T00:00:00Z
date_updated: 2024-02-26T10:30:52Z
day: '08'
department:
- _id: DaAl
external_id:
arxiv:
- '2312.13547'
intvolume: ' 234'
language:
- iso: eng
main_file_link:
- open_access: '1'
url: https://proceedings.mlr.press/v234/kurtic24a
month: '01'
oa: 1
oa_version: Preprint
page: 542-553
publication: Proceedings of Machine Learning Research
publication_identifier:
eissn:
- 2640-3498
publication_status: published
publisher: ML Research Press
quality_controlled: '1'
scopus_import: '1'
status: public
title: 'How to prune your language model: Recovering accuracy on the "Sparsity May
Cry" benchmark'
type: conference
user_id: 2DF688A6-F248-11E8-B48F-1D18A9856A87
volume: 234
year: '2024'
...
---
_id: '15024'
abstract:
- lang: eng
text: Electrostatic correlations between ions dissolved in water are known to impact
their transport properties in numerous ways, from conductivity to ion selectivity.
The effects of these correlations on the solvent itself remain, however, much
less clear. In particular, the addition of salt has been consistently reported
to affect the solution’s viscosity, but most modeling attempts fail to reproduce
experimental data even at moderate salt concentrations. Here, we use an approach
based on stochastic density functional theory, which accurately captures charge
fluctuations and correlations. We derive a simple analytical expression for the
viscosity correction in concentrated electrolytes, by directly linking it to the
liquid’s structure factor. Our prediction compares quantitatively to experimental
data at all temperatures and all salt concentrations up to the saturation limit.
This universal link between the microscopic structure and viscosity allows us
to shed light on the nanoscale dynamics of water and ions under highly concentrated
and correlated conditions.
acknowledgement: The author thanks Lydéric Bocquet, Baptiste Coquinot, and Mathieu
Lizée for fruitful discussions. This project received funding from the European
Union’s Horizon 2020 research and innovation program under the Marie Skłodowska-Curie
Grant Agreement No. 101034413.
article_number: '064503'
article_processing_charge: Yes (in subscription journal)
article_type: original
author:
- first_name: Paul
full_name: Robin, Paul
id: 48c58128-57b0-11ee-9095-dc28fd97fc1d
last_name: Robin
orcid: 0000-0002-5728-9189
citation:
ama: Robin P. Correlation-induced viscous dissipation in concentrated electrolytes.
Journal of Chemical Physics. 2024;160(6). doi:10.1063/5.0188215
apa: Robin, P. (2024). Correlation-induced viscous dissipation in concentrated electrolytes.
Journal of Chemical Physics. AIP Publishing. https://doi.org/10.1063/5.0188215
chicago: Robin, Paul. “Correlation-Induced Viscous Dissipation in Concentrated Electrolytes.”
Journal of Chemical Physics. AIP Publishing, 2024. https://doi.org/10.1063/5.0188215.
ieee: P. Robin, “Correlation-induced viscous dissipation in concentrated electrolytes,”
Journal of Chemical Physics, vol. 160, no. 6. AIP Publishing, 2024.
ista: Robin P. 2024. Correlation-induced viscous dissipation in concentrated electrolytes.
Journal of Chemical Physics. 160(6), 064503.
mla: Robin, Paul. “Correlation-Induced Viscous Dissipation in Concentrated Electrolytes.”
Journal of Chemical Physics, vol. 160, no. 6, 064503, AIP Publishing, 2024,
doi:10.1063/5.0188215.
short: P. Robin, Journal of Chemical Physics 160 (2024).
date_created: 2024-02-25T23:00:55Z
date_published: 2024-02-14T00:00:00Z
date_updated: 2024-02-27T08:16:06Z
day: '14'
ddc:
- '540'
department:
- _id: EdHa
doi: 10.1063/5.0188215
ec_funded: 1
external_id:
arxiv:
- '2311.11784'
pmid:
- '38349632'
file:
- access_level: open_access
checksum: 0a5e0ae70849bce674466fc054390ec0
content_type: application/pdf
creator: dernst
date_created: 2024-02-27T08:12:52Z
date_updated: 2024-02-27T08:12:52Z
file_id: '15034'
file_name: 2024_JourChemicalPhysics_Robin.pdf
file_size: 5452738
relation: main_file
success: 1
file_date_updated: 2024-02-27T08:12:52Z
has_accepted_license: '1'
intvolume: ' 160'
issue: '6'
language:
- iso: eng
month: '02'
oa: 1
oa_version: Published Version
pmid: 1
project:
- _id: fc2ed2f7-9c52-11eb-aca3-c01059dda49c
call_identifier: H2020
grant_number: '101034413'
name: 'IST-BRIDGE: International postdoctoral program'
publication: Journal of Chemical Physics
publication_identifier:
eissn:
- 1089-7690
issn:
- 0021-9606
publication_status: published
publisher: AIP Publishing
quality_controlled: '1'
scopus_import: '1'
status: public
title: Correlation-induced viscous dissipation in concentrated electrolytes
tmp:
image: /images/cc_by.png
legal_code_url: https://creativecommons.org/licenses/by/4.0/legalcode
name: Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)
short: CC BY (4.0)
type: journal_article
user_id: 2DF688A6-F248-11E8-B48F-1D18A9856A87
volume: 160
year: '2024'
...
---
_id: '15025'
abstract:
- lang: eng
text: We consider quadratic forms of deterministic matrices A evaluated at the random
eigenvectors of a large N×N GOE or GUE matrix, or equivalently evaluated at the
columns of a Haar-orthogonal or Haar-unitary random matrix. We prove that, as
long as the deterministic matrix has rank much smaller than √N, the distributions
of the extrema of these quadratic forms are asymptotically the same as if the
eigenvectors were independent Gaussians. This reduces the problem to Gaussian
computations, which we carry out in several cases to illustrate our result, finding
Gumbel or Weibull limiting distributions depending on the signature of A. Our
result also naturally applies to the eigenvectors of any invariant ensemble.
acknowledgement: The first author was supported by the ERC Advanced Grant “RMTBeyond”
No. 101020331. The second author was supported by Fulbright Austria and the Austrian
Marshall Plan Foundation.
article_processing_charge: No
article_type: original
author:
- first_name: László
full_name: Erdös, László
id: 4DBD5372-F248-11E8-B48F-1D18A9856A87
last_name: Erdös
orcid: 0000-0001-5366-9603
- first_name: Benjamin
full_name: McKenna, Benjamin
id: b0cc634c-d549-11ee-96c8-87338c7ad808
last_name: McKenna
orcid: 0000-0003-2625-495X
citation:
ama: Erdös L, McKenna B. Extremal statistics of quadratic forms of GOE/GUE eigenvectors.
Annals of Applied Probability. 2024;34(1B):1623-1662. doi:10.1214/23-AAP2000
apa: Erdös, L., & McKenna, B. (2024). Extremal statistics of quadratic forms
of GOE/GUE eigenvectors. Annals of Applied Probability. Institute of Mathematical
Statistics. https://doi.org/10.1214/23-AAP2000
chicago: Erdös, László, and Benjamin McKenna. “Extremal Statistics of Quadratic
Forms of GOE/GUE Eigenvectors.” Annals of Applied Probability. Institute
of Mathematical Statistics, 2024. https://doi.org/10.1214/23-AAP2000.
ieee: L. Erdös and B. McKenna, “Extremal statistics of quadratic forms of GOE/GUE
eigenvectors,” Annals of Applied Probability, vol. 34, no. 1B. Institute
of Mathematical Statistics, pp. 1623–1662, 2024.
ista: Erdös L, McKenna B. 2024. Extremal statistics of quadratic forms of GOE/GUE
eigenvectors. Annals of Applied Probability. 34(1B), 1623–1662.
mla: Erdös, László, and Benjamin McKenna. “Extremal Statistics of Quadratic Forms
of GOE/GUE Eigenvectors.” Annals of Applied Probability, vol. 34, no. 1B,
Institute of Mathematical Statistics, 2024, pp. 1623–62, doi:10.1214/23-AAP2000.
short: L. Erdös, B. McKenna, Annals of Applied Probability 34 (2024) 1623–1662.
date_created: 2024-02-25T23:00:56Z
date_published: 2024-02-01T00:00:00Z
date_updated: 2024-02-27T08:29:05Z
day: '01'
department:
- _id: LaEr
doi: 10.1214/23-AAP2000
ec_funded: 1
external_id:
arxiv:
- '2208.12206'
intvolume: ' 34'
issue: 1B
language:
- iso: eng
main_file_link:
- open_access: '1'
url: https://doi.org/10.48550/arXiv.2208.12206
month: '02'
oa: 1
oa_version: Preprint
page: 1623-1662
project:
- _id: 62796744-2b32-11ec-9570-940b20777f1d
call_identifier: H2020
grant_number: '101020331'
name: Random matrices beyond Wigner-Dyson-Mehta
publication: Annals of Applied Probability
publication_identifier:
issn:
- 1050-5164
publication_status: published
publisher: Institute of Mathematical Statistics
quality_controlled: '1'
scopus_import: '1'
status: public
title: Extremal statistics of quadratic forms of GOE/GUE eigenvectors
type: journal_article
user_id: 2DF688A6-F248-11E8-B48F-1D18A9856A87
volume: 34
year: '2024'
...
---
_id: '15033'
abstract:
- lang: eng
text: The GNOM (GN) Guanine nucleotide Exchange Factor for ARF small GTPases (ARF-GEF)
is among the best studied trafficking regulators in plants, playing crucial and
unique developmental roles in patterning and polarity. The current models place
GN at the Golgi apparatus (GA), where it mediates secretion/recycling, and at
the plasma membrane (PM) presumably contributing to clathrin-mediated endocytosis
(CME). The mechanistic basis of the developmental function of GN, distinct from
the other ARF-GEFs including its closest homologue GNOM-LIKE1 (GNL1), remains
elusive. Insights from this study largely extend the current notions of GN function.
We show that GN, but not GNL1, localizes to the cell periphery at long-lived structures
distinct from clathrin-coated pits, while CME and secretion proceed normally in
gn knockouts. The functional GN mutant variant GNfewerroots,
absent from the GA, suggests that the cell periphery is the major site of GN action
responsible for its developmental function. Following inhibition by Brefeldin
A, GN, but not GNL1, relocates to the PM likely on exocytic vesicles, suggesting
selective molecular associations en route to the cell periphery. A study of GN-GNL1
chimeric ARF-GEFs indicates that all GN domains contribute to the specific GN
function in a partially redundant manner. Together, this study offers significant
steps toward the elucidation of the mechanism underlying unique cellular and development
functions of GNOM.
acknowledgement: "The authors would like to gratefully acknowledge Dr Xixi Zhang for
cloning the GNL1/pDONR221 construct and for useful discussions.H2020 European Research\r\nCouncil
Advanced Grant ETAP742985 to Jiří Friml, Austrian Science Fund I 3630-B25 to Jiří
Friml"
article_processing_charge: Yes
article_type: original
author:
- first_name: Maciek
full_name: Adamowski, Maciek
id: 45F536D2-F248-11E8-B48F-1D18A9856A87
last_name: Adamowski
orcid: 0000-0001-6463-5257
- first_name: Ivana
full_name: Matijevic, Ivana
id: 83c17ce3-15b2-11ec-abd3-f486545870bd
last_name: Matijevic
- first_name: Jiří
full_name: Friml, Jiří
id: 4159519E-F248-11E8-B48F-1D18A9856A87
last_name: Friml
orcid: 0000-0002-8302-7596
citation:
ama: Adamowski M, Matijevic I, Friml J. Developmental patterning function of GNOM
ARF-GEF mediated from the cell periphery. eLife. 2024;13. doi:10.7554/elife.68993
apa: Adamowski, M., Matijevic, I., & Friml, J. (2024). Developmental patterning
function of GNOM ARF-GEF mediated from the cell periphery. ELife. eLife
Sciences Publications. https://doi.org/10.7554/elife.68993
chicago: Adamowski, Maciek, Ivana Matijevic, and Jiří Friml. “Developmental Patterning
Function of GNOM ARF-GEF Mediated from the Cell Periphery.” ELife. eLife
Sciences Publications, 2024. https://doi.org/10.7554/elife.68993.
ieee: M. Adamowski, I. Matijevic, and J. Friml, “Developmental patterning function
of GNOM ARF-GEF mediated from the cell periphery,” eLife, vol. 13. eLife
Sciences Publications, 2024.
ista: Adamowski M, Matijevic I, Friml J. 2024. Developmental patterning function
of GNOM ARF-GEF mediated from the cell periphery. eLife. 13.
mla: Adamowski, Maciek, et al. “Developmental Patterning Function of GNOM ARF-GEF
Mediated from the Cell Periphery.” ELife, vol. 13, eLife Sciences Publications,
2024, doi:10.7554/elife.68993.
short: M. Adamowski, I. Matijevic, J. Friml, ELife 13 (2024).
date_created: 2024-02-27T07:10:11Z
date_published: 2024-02-21T00:00:00Z
date_updated: 2024-02-28T12:29:43Z
day: '21'
ddc:
- '580'
department:
- _id: JiFr
doi: 10.7554/elife.68993
ec_funded: 1
has_accepted_license: '1'
intvolume: ' 13'
keyword:
- General Immunology and Microbiology
- General Biochemistry
- Genetics and Molecular Biology
- General Medicine
- General Neuroscience
language:
- iso: eng
main_file_link:
- open_access: '1'
url: https://doi.org/10.7554/eLife.68993
month: '02'
oa: 1
oa_version: Published Version
project:
- _id: 261099A6-B435-11E9-9278-68D0E5697425
call_identifier: H2020
grant_number: '742985'
name: Tracing Evolution of Auxin Transport and Polarity in Plants
- _id: 26538374-B435-11E9-9278-68D0E5697425
call_identifier: FWF
grant_number: I03630
name: Molecular mechanisms of endocytic cargo recognition in plants
publication: eLife
publication_identifier:
issn:
- 2050-084X
publication_status: epub_ahead
publisher: eLife Sciences Publications
quality_controlled: '1'
status: public
title: Developmental patterning function of GNOM ARF-GEF mediated from the cell periphery
tmp:
image: /images/cc_by.png
legal_code_url: https://creativecommons.org/licenses/by/4.0/legalcode
name: Creative Commons Attribution 4.0 International Public License (CC-BY 4.0)
short: CC BY (4.0)
type: journal_article
user_id: 2DF688A6-F248-11E8-B48F-1D18A9856A87
volume: 13
year: '2024'
...