@article{11751, abstract = {The Seebeck coefficients, electrical resistivities, total thermal conductivities, and magnetization are reported for temperatures between 5 and 350 K for n-type Bi0.88Sb0.12 nano-composite alloys made by Ho-doping at the 0, 1, and 3 % atomic levels. The alloys were prepared using a dc hot-pressing method, and are shown to be single phase for both Ho contents with grain sizes on the average of 900 nm. We find the parent compound has a maximum of ZT = 0.28 at 231 K, while doping 1 % Ho increases the maximum ZT to 0.31 at 221 K and the 3 % doped sample suppresses the maximum ZT = 0.24 at a temperature of 260 K.}, author = {Lukas, K. C. and Joshi, G. and Modic, Kimberly A and Ren, Z. F. and Opeil, C. P.}, issn = {1573-4803}, journal = {Journal of Materials Science}, number = {15}, pages = {5729--5734}, publisher = {Springer Nature}, title = {{Thermoelectric properties of Ho-doped Bi0.88Sb0.12}}, doi = {10.1007/s10853-012-6463-6}, volume = {47}, year = {2012}, } @article{7074, abstract = {The Seebeck coefficients, electrical resistivities, total thermal conductivities, and magnetization are reported for temperatures between 5 and 350 K for n-type Bi0.88Sb0.12 nano-composite alloys made by Ho-doping at the 0, 1, and 3 % atomic levels. The alloys were prepared using a dc hot-pressing method, and are shown to be single phase for both Ho contents with grain sizes on the average of 900 nm. We find the parent compound has a maximum of ZT = 0.28 at 231 K, while doping 1 % Ho increases the maximum ZT to 0.31 at 221 K and the 3 % doped sample suppresses the maximum ZT = 0.24 at a temperature of 260 K.}, author = {Lukas, K. C. and Joshi, G. and Modic, Kimberly A and Ren, Z. F. and Opeil, C. P.}, issn = {1573-4803}, journal = {Journal of Materials Science}, number = {15}, pages = {5729--5734}, publisher = {Springer Nature}, title = {{Thermoelectric properties of Ho-doped Bi0.88Sb0.12}}, doi = {10.1007/s10853-012-6463-6}, volume = {47}, year = {2012}, }